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1. 发明授权

US09054269B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US09054269B2
公开(公告)日：2015-06-09
申请号：US13637955
申请日：2011-03-15
申请人： Koji Okuno
发明人： Koji Okuno
IPC分类号： H01L33/00 , H01L33/20
CPC分类号： H01L33/20 , H01L33/007
摘要： To improve light extraction efficiency.A semiconductor light-emitting device wherein each layer is formed of a Group III nitride-based compound semiconductor. The light-emitting device comprises a sapphire substrate having a plurality of stripe-patterned grooves 11 arranged in parallel to a first direction (x axis) on a surface of the substrate 10, a dielectric 15 discontinuously formed at least in the first direction on the surface 10a of the sapphire substrate and in the grooves 11, a base layer being grown on side surfaces of the grooves and made of a Group III nitride-based compound semiconductor covering the surface 10a of the sapphire substrate and the top surfaces 15a of the dielectrics 15, and a device layer constituting a light-emitting device formed on the base layer.
摘要翻译：提高光提取效率。一种半导体发光器件，其中每个层由III族氮化物基化合物半导体形成。发光装置包括蓝宝石衬底，该蓝宝石衬底具有与衬底10的表面上的第一方向（x轴）平行设置的多个条状图案化槽11，至少在第一方向上不连续形成的电介质15 蓝宝石衬底的表面10a和凹槽11中的基底层，其生长在凹槽的侧表面上，并且覆盖蓝宝石衬底的表面10a和电介质的顶表面15a的III族氮化物基化合物半导体以及构成在基底层上形成的发光装置的器件层。

2. 发明授权

US08685775B2 Group III nitride semiconductor light-emitting device and production method therefor 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08685775B2
公开(公告)日：2014-04-01
申请号：US13593240
申请日：2012-08-23
申请人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
发明人： Atsushi Miyazaki , Koji Okuno , Shugo Nitta
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/04 , H01L33/32
摘要： On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 Å to 100 Å is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.
摘要翻译：在发光层上，在800℃〜950℃的温度下形成掺有Mg的AlGaInN的pp包覆层。接着，在p包层上形成厚度为5的未掺杂GaN的覆盖层以与用于ap包层的温度相同的温度形成。接下来，在随后的工艺中温度增加到生长温度接触层。由于形成了覆盖层，并且在加热期间p包层的表面没有露出，所以抑制了Mg或杂质混合物向p包覆层的过度掺杂。可防止p包层的特性劣化。然后，在覆盖层上，在950℃〜1100℃的温度下形成p接触层。

3. 发明授权

US08598599B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08598599B2
公开(公告)日：2013-12-03
申请号：US13064454
申请日：2011-03-25
申请人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
发明人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/007 , H01L33/32
摘要： The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.
摘要翻译：本发明提供一种III族氮化物半导体发光器件，其主表面是提供内部电场为零的平面，并且其表现出改善的发射性能。发光装置包括：蓝宝石基板，其表面具有从上方观察的条纹图案的多个凹部; 形成在蓝宝石衬底的凹陷表面上的n接触层; 形成在所述n接触层上的发光层; 形成在发光层上的电子阻挡层; 形成在电子阻挡层上的p型接触层; p电极; 和n电极。电子阻挡层的厚度为2〜8nm，由Al组成比例为20〜30％的由Mg掺杂的AlGaN构成。

4. 发明授权

US08465997B2 Manufacturing method of group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US08465997B2
公开(公告)日：2013-06-18
申请号：US12659173
申请日：2010-02-26
申请人： Koji Okuno
发明人： Koji Okuno
IPC分类号： H01L33/00
CPC分类号： H01L21/02573 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02609
摘要： A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.
摘要翻译：一种III族氮化物半导体的制造方法，包括：制备包括缓冲层的衬底; 在掺杂抗表面活性剂的同时，通过MOCVD从III族氮化物半导体在缓冲层上形成第一层，其中第一层的厚度等于或小于2μm; 通过MOCVD从III族氮化物半导体在第一层上形成第二层，同时掺杂表面活性剂和抗表面活性剂中的至少一种; 以及通过调节在形成第二层期间掺杂的抗表面活性剂和表面活性剂的量来控制第二层的结晶质量和表面平坦度。

5. 发明授权

US08420425B2 Method for producing a group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08420425B2
公开(公告)日：2013-04-16
申请号：US13481386
申请日：2012-05-25
申请人： Koji Okuno , Atsushi Miyazaki
发明人： Koji Okuno , Atsushi Miyazaki
IPC分类号： H01L21/00
CPC分类号： C23C16/301 , C23C16/45523 , H01L33/0075
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800° C. to 950° C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage.
摘要翻译：本发明提供一种其驱动电压降低的III族氮化物半导体发光元件的制造方法。在制造方法中，p包层具有交替沉积厚度为0.5nm〜10nm的p-AlGaN层和InGaN层的超晶格结构。 p-AlGaN层的生长温度为800℃〜950℃。在p-AlGaN层上形成厚度为1〜2个单层的InGaN层，通过停止TMA的供给，引入TMI，以及在保持p-AlGaN层处于生长温度的同时增加Ga源气体的供给量。因此，可以降低p包层的厚度，同时保持良好的晶体质量，从而降低驱动电压。

6. 发明申请

US20120309124A1 METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法
公开(公告)号：US20120309124A1
公开(公告)日：2012-12-06
申请号：US13481386
申请日：2012-05-25
申请人： Koji OKUNO , Atsushi Miyazaki
发明人： Koji OKUNO , Atsushi Miyazaki
IPC分类号： H01L33/32
CPC分类号： C23C16/301 , C23C16/45523 , H01L33/0075
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800° C. to 950° C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage.
摘要翻译：本发明提供一种其驱动电压降低的III族氮化物半导体发光元件的制造方法。在制造方法中，p包层具有交替沉积厚度为0.5nm〜10nm的p-AlGaN层和InGaN层的超晶格结构。 p-AlGaN层的生长温度为800℃〜950℃。在p-AlGaN层上形成厚度为1〜2个单层的InGaN层，通过停止TMA的供给，引入TMI，以及在保持p-AlGaN层处于生长温度的同时增加Ga源气体的供给量。因此，可以降低p包层的厚度，同时保持良好的晶体质量，从而降低驱动电压。

7. 发明申请

US20120248407A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20120248407A1
公开(公告)日：2012-10-04
申请号：US13433215
申请日：2012-03-28
申请人： Yusuke TOYODA , Koji Okuno , Kazuki Nishijima
发明人： Yusuke TOYODA , Koji Okuno , Kazuki Nishijima
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/08
摘要： A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0
摘要翻译： III族氮化物半导体发光器件包括具有包含Al x Ga 1-x N（0

8. 发明授权

US08258052B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08258052B2
公开(公告)日：2012-09-04
申请号：US12899061
申请日：2010-10-06
申请人： Koji Okuno , Yoichiro Tarui
发明人： Koji Okuno , Yoichiro Tarui
IPC分类号： H01L21/425
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/0615 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/7395 , H01L29/7811 , H01L29/872
摘要： A method of manufacturing a silicon carbide semiconductor device according to the present invention includes the steps of (a) forming an implantation mask made up of a plurality of unit masks on a silicon carbide semiconductor layer, and (b) implanting predetermined ion in the silicon carbide semiconductor layer at a predetermined implantation energy by using the implantation mask. In the step (a), the implantation mask is formed such that a length from any point in the unit mask to an end of the unit mask can be equal to or less than a scattering length obtained when the predetermined ion is implanted in silicon carbide at the predetermined implantation energy and the implantation mask can have a plurality of regions different from each other in terms of a size and an arrangement interval of the unit masks.
摘要翻译：根据本发明的制造碳化硅半导体器件的方法包括以下步骤：（a）在碳化硅半导体层上形成由多个单位掩模构成的注入掩模，以及（b）在硅中注入预定的离子通过使用注入掩模在预定的注入能量下形成碳化物半导体层。在步骤（a）中，形成注入掩模，使得从单位掩模中的任何点到单位掩模的末端的长度可以等于或小于当将预定离子注入到碳化硅中时获得的散射长度在预定的注入能量和注入掩模可以具有在单位掩模的尺寸和排列间隔方面彼此不同的多个区域。

9. 发明申请

US20110244610A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：生产III族氮化物半导体发光器件的方法
公开(公告)号：US20110244610A1
公开(公告)日：2011-10-06
申请号：US13074714
申请日：2011-03-29
申请人： Yoshiki SAITO , Koji Okuno , Yasuhisa Ushida
发明人： Yoshiki SAITO , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L33/22
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits.
摘要翻译：本发明提供一种主要表面是提供内部电场为零的平面的III族氮化物半导体发光器件的制造方法，其表现出提高的光提取性能。在制造方法中，对a面蓝宝石基板的一个表面进行干蚀刻，从而形成具有从上方观察而成蜂窝状图案的多个台面的压花图案; 以及由具有m面主表面的III族氮化物半导体层形成的n型层，发光层和p型层依次层叠在蓝宝石基板的表面上在其上形成台面。接着，在p型层上形成p电极，p电极通过金属层与支撑基板接合。接下来，通过激光剥离处理去除蓝宝石衬底。在这样暴露的n型层的表面上形成具有通过蓝宝石衬底的压花图案的台面的转印提供的凹痕的压花图案。然后，对n型层的压花图案表面进行湿式蚀刻，从而形成许多蚀刻凹坑。

10. 发明申请

US20110240957A1 Group lll nitride semiconductor light-emitting device 审中-公开
标题翻译：第III族氮化物半导体发光器件
公开(公告)号：US20110240957A1
公开(公告)日：2011-10-06
申请号：US13064536
申请日：2011-03-30
申请人： Koji Okuno , Atsushi Miyazaki
发明人： Koji Okuno , Atsushi Miyazaki
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/04 , H01L33/32
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InyGa1-yN (0
摘要翻译：本发明提供一种在不增加驱动电压的情况下显示出改善的发射性能的III族氮化物半导体发光器件。 III族氮化物半导体发光器件至少包括n型层侧包覆层，发光层和p型层侧覆层，其中的每一层由组 III族氮化物半导体。 n型层侧包层是具有In y Ga 1-y N（0

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