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1. 发明申请

US20090197118A1 Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体，晶片和III族氮化物系化合物半导体器件的制造方法
公开(公告)号：US20090197118A1
公开(公告)日：2009-08-06
申请号：US12320642
申请日：2009-01-30
申请人： Seiji NAGAI , Shiro YAMAZAKI , Takayuki SATO , Yasuhide YAKUSHI , Koji OKUNO , Koichi GOSHONOO
发明人： Seiji NAGAI , Shiro YAMAZAKI , Takayuki SATO , Yasuhide YAKUSHI , Koji OKUNO , Koichi GOSHONOO
IPC分类号： C30B25/04 , B32B19/04
CPC分类号： H01L21/0254 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/02639
摘要： Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lsapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.
摘要翻译：提供一种具有M面主面的III族氮化物系化合物半导体的制造方法。该方法采用蓝色蓝宝石衬底，该蓝宝石衬底具有主表面，其相对于R平面围绕由R平面和与其垂直的A平面形成的交线Lsapph-AM倾斜30°。暴露蓝宝石衬底的R平面表面，并且在衬底的主表面上形成二氧化硅掩模。 AlN缓冲层形成在暴露的R平面上。在AlN缓冲层上形成GaN层。在GaN生长的初始阶段，蓝宝石衬底的顶表面通过横向生长完全被GaN层覆盖。生长GaN层使得该层的a轴垂直于蓝宝石衬底的暴露的R平面表面; 层的c轴平行于蓝宝石衬底的轴方向Lsapph-AM; 并且从其a轴倾斜30°的层的m轴垂直于蓝宝石衬底的主表面（从露出的R平面倾斜30°）。

2. 发明申请

US20080271665A1 Method for producing group III Nitride-based compound semiconductor 有权
标题翻译：制备III族氮化物系化合物半导体的方法
公开(公告)号：US20080271665A1
公开(公告)日：2008-11-06
申请号：US12081943
申请日：2008-04-23
申请人： Shiro YAMAZAKI , Seiji NAGAI , Takayuki SATO , Katsuhiro IMAI , Makoto IWAI , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA
发明人： Shiro YAMAZAKI , Seiji NAGAI , Takayuki SATO , Katsuhiro IMAI , Makoto IWAI , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA
IPC分类号： C30B15/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12 , C30B29/406
摘要： In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
摘要翻译：在通过助熔剂制造GaN的情况下，可以防止在GaN自立基板的氮面上沉积杂晶，原料的浪费。例示了四个坩埚和GaN自立衬底的布置。在图如图1A所示，自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。在图如图1B所示，自立式基板的氮面与坩埚的水平面对的平坦的内壁紧密接触，通过夹具固定基板。在图如图1C所示，在坩埚的平坦底部设置夹具，并且通过夹具固定两个GaN自立基板，使得基板的氮气面彼此紧密接触。在图如图1D所示，在坩埚的平坦底部设置夹具，并且将GaN自立基板固定在夹具上，使得基板的氮面被夹具覆盖。将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面上生长GaN单晶。

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