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1. 发明授权

US4063115A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4063115A
公开(公告)日：1977-12-13
申请号：US720492
申请日：1976-09-03
申请人： Shinzi Okuhara , Yoshikazu Hosokawa , Tatsuya Kamei , Masayoshi Suzuki
发明人： Shinzi Okuhara , Yoshikazu Hosokawa , Tatsuya Kamei , Masayoshi Suzuki
IPC分类号： H02M1/08 , H03K17/082 , H03K17/73 , H03K17/72
CPC分类号： H03K17/73 , H03K17/0824
摘要： A semiconductor switch assuring the easy formation of a semiconductor integrated circuit and having high control sensitivity while maintaining high dv/dt - immunity, which comprises a PNPN switch of an equivalently four-layered structure including at least three PN-junctions, an anode and a cathode, switching means including a control terminal and connected with the PNPN switch to shunt one of the three PN-junctions at either one end of the PNPN switch, amplifying means, and a capacitive element for differentiating a voltage applied between the anode and the cathode of the PNPN switch to allow a current to flow into the control terminal of the switching means through the amplifying means, so that the switching means is driven by the current thereby to short-circuit the one of three PN-junctions.
摘要翻译：半导体开关确保容易地形成半导体集成电路并且具有高的控制灵敏度，同时保持高的dv / dt-抗扰度，其包括具有至少三个PN结的等效四层结构的PNPN开关，阳极和阴极，包括控制端并与PNPN开关连接的开关装置，以分流PNPN开关的任一端的三个PN结中的一个，放大装置和用于区分施加在阳极和阴极之间的电压的电容元件的PNPN开关以允许电流通过放大装置流入开关装置的控制端，使得开关装置由电流驱动，从而使三个PN结中的一个短路。

2. 发明授权

US4084110A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4084110A
公开(公告)日：1978-04-11
申请号：US727453
申请日：1976-09-28
申请人： Shinzi Okuhara , Ichiro Ohhinata , Tatsuya Kamei , Masayoshi Suzuki
发明人： Shinzi Okuhara , Ichiro Ohhinata , Tatsuya Kamei , Masayoshi Suzuki
IPC分类号： H03K17/0812 , H03K17/73 , H03K17/72
CPC分类号： H03K17/73 , H03K17/08124
摘要： A stable semiconductor switch comprising a PNPN switch, a transistor, a driving device, and diodes. The PNPN switch is composed of four-layered PNPN structure and has three PN-junctions, an anode, an anode gate, a cathode gate, and a cathode. The collector and the emitter of the transistor are connected to the cathode gate and the cathode of the PNPN switch, respectively. The driving device has its one end connected to the anode gate of the PNPN switch and its other end connected to the base of the transistor so as to drive the transistor in transient state. The diodes are connected between the driving device and the emitter of the transistor in a manner so that, when the PNPN switch is controlled to fire and a back current tends to flow through the PNPN switch temporarily, the back current does not flow through the transistor so as to prevent the transistor from causing any abnormal actions such as oscillation.
摘要翻译：一种稳定的半导体开关，包括PNPN开关，晶体管，驱动器件和二极管。 PNPN开关由四层PNPN结构组成，具有三个PN结，一个阳极，一个阳极栅极，一个阴极栅极和一个阴极。晶体管的集电极和发射极分别连接到PNPN开关的阴极和阴极。驱动装置的一端连接到PNPN开关的阳极栅极，其另一端连接到晶体管的基极，以便在瞬态状态下驱动晶体管。二极管以这样的方式连接在驱动装置和晶体管的发射极之间，使得当PNPN开关被控制起来并且反向电流趋于临时流过PNPN开关时，反向电流不流过晶体管以防止晶体管引起诸如振荡的任何异常动作。

3. 发明授权

US4107472A Semiconductor channel switch 失效
标题翻译：半导体通道开关
公开(公告)号：US4107472A
公开(公告)日：1978-08-15
申请号：US707352
申请日：1976-07-21
申请人： Mitsuru Kawanami , Shinzi Okuhara , Takuzi Mukaemachi
发明人： Mitsuru Kawanami , Shinzi Okuhara , Takuzi Mukaemachi
IPC分类号： H03K17/735 , H04Q3/52 , H04Q3/50
CPC分类号： H04Q3/521 , H03K17/735
摘要： A plurality of PNPN switches, each permitting current flow in either, i.e., positive or negative, direction, are arranged at the cross points between the rows and the columns of the speech paths so as to form a matrix. The gate trigger terminal of each PNPN switch is connected with a gating current circuit having a high impedance, which circuit is adapted to control ON and OFF operations of the switch. A plurality of means are provided to selectively turn the gate current circuits on and off so that gate current is supplied continuously for the gate terminal of any desired PNPN switch at least for the time during which the corresponding cross point of the matrix is to be electrically bridged.
摘要翻译：多个PNPN开关，每个允许电流在任一方向，即正或负方向流动，布置在语音路径的行和列之间的交叉点处，以形成矩阵。每个PNPN开关的门极触发端子与具有高阻抗的选通电流电路连接，该电路适于控制开关的导通和截止操作。提供了多个装置以选择性地打开和关闭栅极电流电路，使得至少在矩阵的对应交叉点电气地连续地为任何期望的PNPN开关的栅极端子提供栅极电流桥接

4. 发明授权

US3990102A Semiconductor integrated circuits and method of manufacturing the same 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US3990102A
公开(公告)日：1976-11-02
申请号：US590560
申请日：1975-06-26
申请人： Shinzi Okuhara , Ichiro Ohhinata , Masaaki Kusano
发明人： Shinzi Okuhara , Ichiro Ohhinata , Masaaki Kusano
IPC分类号： H01L21/74 , H01L21/76 , H01L21/762 , H01L23/66 , H01L27/12 , H01L29/04
CPC分类号： H01L21/743 , H01L21/76 , H01L21/76297 , H01L23/66 , H01L2924/0002 , H01L2924/3011 , Y10S148/025 , Y10S148/085 , Y10S148/122
摘要： Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions electrically separated by a polycrystalline semiconductor and dielectric insulation films, and circuit elements formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, at least the high resistivity layer is adjacent to the monocrystalline region and the low resistivity region is coupled to a contact provided on a surface of the chip, whereby an electrostatic coupling between the circuit elements is shielded by the low resistivity layer to prevent cross-talks due to the electrostatic coupling. A method of manufacturing the same is also disclosed.
摘要翻译：包括具有由多晶半导体和介电绝缘膜电隔离的多个单晶半导体区域的介质隔离半导体芯片的半导体集成电路以及形成在单晶区域中的电路元件，其中所述多晶衬底包括高电阻率层和低电阻率层至少高电阻率层与单晶区域相邻，并且低电阻率区域耦合到设置在芯片表面上的触点，由此电路元件之间的静电耦合被低电阻率层屏蔽，会议由于静电耦合。还公开了一种制造该方法的方法。

5. 发明授权

US4112346A Constant current circuit 失效
标题翻译：恒流电路
公开(公告)号：US4112346A
公开(公告)日：1978-09-05
申请号：US823197
申请日：1977-08-09
申请人： Michio Tokunaga , Ichiro Ohhinata , Shinzi Okuhara
发明人： Michio Tokunaga , Ichiro Ohhinata , Shinzi Okuhara
IPC分类号： G05F1/56
CPC分类号： G05F1/56
摘要： A constant current circuit includes two characteristic-correlated PNP transistors connected to a constant voltage source and having common-connected emitters and common-connected bases and an NPN transistor. A constant current is taken out of a collector of a first PNP transistor. A collector of a second PNP transistor is connected to a base of the NPN transistor and the common-connected emitters of the first and second PNP transistors is connected to a collector of the NPN transistor to form a negative feedback circuit in the first PNP transistor, whereby when a current gain of the second PNP transistor which is characteristic corelated to the first PNP transistor is high a large amount of feedback is applied and when the current gain is low a small amount of feedback is applied so that the magnitude of the output constant current taken from the collector of the first PNP transistor is adjusted.
摘要翻译：恒流电路包括连接到恒压源并且具有共同连接的发射极和共连接基极的两个特征相关PNP晶体管和NPN晶体管。从第一PNP晶体管的集电极中取出恒定电流。第二PNP晶体管的集电极连接到NPN晶体管的基极，并且第一和第二PNP晶体管的共同连接的发射极连接到NPN晶体管的集电极，以在第一PNP晶体管中形成负反馈电路，由此当第一PNP晶体管特征化的第二PNP晶体管的电流增益高时，施加大量反馈，并且当电流增益为低时，施加少量的反馈，使得输出常数的大小调整从第一PNP晶体管的集电极获取的电流。

6. 发明授权

US4071779A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4071779A
公开(公告)日：1978-01-31
申请号：US715156
申请日：1976-08-17
申请人： Mitsuru Kawanami , Ichiro Ohhinata , Shinzi Okuhara
发明人： Mitsuru Kawanami , Ichiro Ohhinata , Shinzi Okuhara
IPC分类号： H02M1/08 , H03K17/0812 , H03K17/16 , H03K17/73 , H03K17/02 , H03K17/60
CPC分类号： H03K17/08124 , H03K17/73
摘要： A semiconductor switch of a PNPN structure comprises a PNPN switch of an equivalently four-layered structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and the second transistor has its emitter and base connected to the P-type anode and N-type gate, respectively, and has its collector connected to the base of the first transistor through the level shifting circuit. In this arrangement, the first transistor is driven by the current flowing through a PN junction at the end on the side of the anode of the PNPN switch and the level shifting circuit, so that the semiconductor switch has a great dv/dt withstanding power, operates with high sensitivity, has a high breakdown voltage in both directions and facilitates the setting of circuit constants.
摘要翻译： PNPN结构的半导体开关包括具有P型阳极，N型阴极，N型栅极和P型栅极的等效四层结构的PNPN开关，第一NPN晶体管，第二PNP晶体管，电平移动电路和阻抗元件，其中阻抗元件连接在第一晶体管的集电极和发射极之间，第一晶体管的集电极和发射极分别连接到P型栅极和N型阴极，第二晶体管的发射极和基极分别连接到P型阳极和N型栅极，并且其集电极通过电平移位电路连接到第一晶体管的基极。在这种布置中，第一晶体管由流过PNPN开关和电平移动电路的阳极侧端部的PN结的电流驱动，使得半导体开关具有很好的dv / dt承受功率，以高灵敏度工作，在两个方向上具有高击穿电压，并有助于设置电路常数。

7. 发明授权

US4031412A Memory circuit 失效
标题翻译：存储电路
公开(公告)号：US4031412A
公开(公告)日：1977-06-21
申请号：US643757
申请日：1975-12-23
申请人： Ichiro Ohhinata , Shinzi Okuhara
发明人： Ichiro Ohhinata , Shinzi Okuhara
IPC分类号： G11C11/36 , G11C11/41 , G11C11/411 , H03K3/286 , H03K3/352 , H03K17/00 , G11C11/40
CPC分类号： H03K3/352 , G11C11/4113 , H03K3/286
摘要： A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element circuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.
摘要翻译：存储电路包括具有等效的PNPN四层结构的半导体元件电路，至少NPN晶体管和二极管。半导体元件电路的N型发射极连接到NPN晶体管的基极，而电路的P型基极通过二极管连接到NPN晶体管的集电极。半导体元件电路具有正反馈回路，其另外设置有跨越P型基极和半导体元件电路的N型发射极的另一个反馈回路，由此在存储电路的导通保持状态下，半导体元件电路作为电流稳定电路工作，并且包含在附加反馈回路中的晶体管被稳定在受控的稳态状态。因此，存储器电路可以以低功耗高速运行。

8. 发明授权

US3942040A Semiconductor speech path switch circuitry 失效
标题翻译：半导体语音路径开关电路
公开(公告)号：US3942040A
公开(公告)日：1976-03-02
申请号：US484320
申请日：1974-06-28
申请人： Shinzi Okuhara
发明人： Shinzi Okuhara
IPC分类号： H03K17/00 , H03K17/72 , H03K17/725 , H04Q3/52 , H03K17/56
CPC分类号： H04Q3/521 , H03K17/725
摘要： A semiconductor speech path switch circuitry is disclosed in which a terminal is provided to one region of a semiconductor device located between two points to be channeled to each other and having a four-region structure of PNPN with three PN junctions, the one region having the lowest impurity concentration in the semiconductor device and also determining the breakdown voltage thereof, a bias voltage being applied to the terminal through a variable impedance circuit exhibiting a high impedance in the turned-on state of the semiconductor device while exhibiting a low impedance in the turned-off state of the semiconductor device. In the semiconductor channel switch circuitry, the crosstalk through the junction capacitances is greatly reduced and the available frequency band is wide.
摘要翻译：公开了一种半导体语音路径切换电路，其中终端被提供给位于要被引导到彼此之间的两个点之间的半导体器件的一个区域，并具有具有三个PN结的PNPN的四区域结构，该区域具有半导体器件中的最低杂质浓度，并且还确定其击穿电压，偏置电压通过可变阻抗电路施加到端子，该可变阻抗电路在半导体器件的接通状态下呈现高阻抗，同时在转向 - 半导体器件的状态。在半导体通道开关电路中，通过结电容的串扰大大降低，可用频带宽。

9. 发明授权

US4082923A Semiconductor speech path switch 失效
标题翻译： SEMICONDUCTOR SPEECH PATH SWITCH
公开(公告)号：US4082923A
公开(公告)日：1978-04-04
申请号：US517003
申请日：1974-10-22
申请人： Shinzi Okuhara
发明人： Shinzi Okuhara
IPC分类号： H03K17/00 , H04Q3/52
CPC分类号： H04Q3/521
摘要： A plurality of sets of thyristors, each set consisting of two thyristors connected in inverse parallel configuration, are arranged in the form of a matrix to provide a switch of balanced or unbalanced type. A control circuit is provided which feeds successive pulses or light energy whose repetition rate is higher than the frequency of the ac signal such as a ringing signal passing through the speech paths, to the thyristors at a cross-point to be closed, during the time required for exchange operation. In this way, a speech path switch can be constituted of semiconductor elements and ringing, dialing and hooking signals can be treated together with speech signals.

10. 发明授权

US4039863A Light activated semiconductor switch device 失效
标题翻译：光激活半导体开关器件
公开(公告)号：US4039863A
公开(公告)日：1977-08-02
申请号：US590562
申请日：1975-06-26
申请人： Ichiro Ohhinata , Shinzi Okuhara , Michio Tokunaga
发明人： Ichiro Ohhinata , Shinzi Okuhara , Michio Tokunaga
IPC分类号： H03K17/78 , H03K17/16 , H03K17/73 , H03K17/79 , H03K17/72
CPC分类号： H03K17/16 , H03K17/79 , Y10T307/773
摘要： A light activated semiconductor switch device comprising a light activated PNPN switch, an impedance element, a switching element, and a capacitance element. The impedance element and switching element are connected in parallel across the cathode gate and the cathode or across the anode and the anode gate of the light activated PNPN switch, and the switching element is turned on by the current supplied through the capacitance element, so that the device can operate with improved tolerance to dv/dt and high turn-on sensitivity.

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