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1. 发明申请

US20130084408A1 VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：真空加工设备和等离子体处理方法
公开(公告)号：US20130084408A1
公开(公告)日：2013-04-04
申请号：US13703694
申请日：2011-05-09
申请人： Sachiko Nakao , Eishiro Sasakawa , Yoshiaki Takeuchi , Naoyuki Miyazono , Eiichiro Ohtsubo
发明人： Sachiko Nakao , Eishiro Sasakawa , Yoshiaki Takeuchi , Naoyuki Miyazono , Eiichiro Ohtsubo
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/4557 , C23C16/45578 , C23C16/46 , C23C16/511 , H01J37/32229 , H01L31/1804 , H01L31/1816 , H01L31/1824 , H01L31/1876 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02P70/521
摘要： A vacuum processing apparatus includes a discharge chamber with a ridge waveguide having an exhaust-side ridge electrode and a substrate-side ridge electrode between which a plasma is formed; a pair of converters, which convert high-frequency power into TE mode, which represents the basic transmission mode of rectangular waveguides, for transmission to the discharge chamber, and form a plasma between the exhaust-side ridge electrode and the substrate-side ridge electrode; a uniform heating temperature controller, which is disposed on the outer surface of the substrate-side ridge electrode and heats the electrode uniformly; and a heat-absorbing temperature control unit, which is disposed on the outer surface of the exhaust-side ridge electrode and controls thermal flux through the thickness direction of a substrate undergoing plasma processing. The substrate is disposed between the exhaust-side ridge electrode and the substrate-side ridge electrode, and subjected to plasma processing.
摘要翻译：一种真空处理装置，包括具有带有排气侧脊电极的脊波导和形成有等离子体的基板侧脊电极的放电室，一对转换器，其将高频功率转换成TE模式，其表示矩形波导的基本传输模式，用于传输到放电室，并且在排气侧脊电极和衬底侧脊电极之间形成等离子体 ; 均匀的加热温度控制器，其设置在基板侧脊电极的外表面上，并均匀地加热电极; 以及吸收温度控制单元，其设置在排气侧脊电极的外表面上，并控制经受等离子体处理的基板的厚度方向的热通量。基板设置在排气侧脊电极和基板侧脊电极之间，进行等离子体处理。

2. 发明授权

US07205034B2 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US07205034B2
公开(公告)日：2007-04-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

3. 发明申请

US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus 有权
标题翻译：用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
公开(公告)号：US20050255255A1
公开(公告)日：2005-11-17
申请号：US10494528
申请日：2002-10-29
申请人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
发明人： Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
IPC分类号： C23C16/509 , H01J37/32 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082
摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
摘要翻译：本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波相同的频率，以及接收不同的高频波的第二周期。以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

4. 发明申请

US20090308428A1 SOLAR PANEL AND METHOD OF MANUFACTURING SOLAR PANEL 审中-公开
标题翻译：太阳能电池板及制造太阳能电池板的方法
公开(公告)号：US20090308428A1
公开(公告)日：2009-12-17
申请号：US12375785
申请日：2006-09-08
申请人： Eishiro Sasakawa , Satoshi Kokaji , Kazuhiko Ogawa , Tatsuji Horioka
发明人： Eishiro Sasakawa , Satoshi Kokaji , Kazuhiko Ogawa , Tatsuji Horioka
IPC分类号： H01L31/042
CPC分类号： H01L31/18 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： A solar panel has a substrate (1) and a plurality of photovoltaic cells (5). The substrate (1) has a first side (1a), a second side (1b), a third side (1c) and a fourth side (1d). The plurality of photovoltaic cells (5) are provided on the substrate (1), arranged parallel to the first side (1a), and connected in series one after another. The plurality of photovoltaic cells (5) have a first trench (15a) located adjacent to the first side (1a) and parallel to the first side (1a) and a second trench (15b) located adjacent to the second side (1b) and parallel to the second side (1b), while do not have a trench located adjacent to the third side (1c) and parallel to the third side (1c) and a trench located adjacent to the fourth side (1d) and parallel to the fourth side (1d). The first trench (15a) and the second trench (15b) are formed from a surface of the plurality of photovoltaic cells (5) toward a surface of the substrate (1), and so extend to vicinities of the third side (1c) and the fourth side (1d) as not to reach an edge of the substrate (1).
摘要翻译：太阳能电池板具有基板（1）和多个光伏电池（5）。基板（1）具有第一侧（1a），第二侧（1b），第三侧（1c）和第四侧（1d）。多个光伏电池（5）设置在与第一侧（1a）平行布置的基板（1）上，并联连接。多个光伏电池（5）具有与第一侧（1a）相邻且平行于第一侧（1a）的第一沟槽（15a）和位于第二侧（1b）附近的第二沟槽（15b），以及平行于第二侧（1b），而不具有位于第三侧（1c）附近并且平行于第三侧（1c）的沟槽和位于第四侧（1d）附近并平行于第四侧侧（1d）。第一沟槽15a和第二沟槽15b由多个光电池（5）的表面朝向衬底（1）的表面形成，并且延伸到第三侧（1c）的附近和第四侧（1d）不到达基板（1）的边缘。

5. 发明授权

US08529704B2 Vacuum processing apparatus and operating method for vacuum processing apparatus 失效
标题翻译：真空处理装置及真空处理装置的操作方法
公开(公告)号：US08529704B2
公开(公告)日：2013-09-10
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： B08B5/04
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).
摘要翻译：用于清洁真空处理装置的操作方法包括当预定数量的成膜过程完成时，将清洁气体进料到真空处理设备的成膜室中。基于薄膜沉积相关的操作时间（薄膜沉积时间和薄膜沉积准备时间）和清洁相关的操作时间（清洁程序时间，清洁程序准备时间）来计算预定数量的成膜沉积工艺，以及预沉积膜沉积时间）。

6. 发明授权

US4683177A Power generation system in fuel cell 失效
标题翻译：燃料电池发电系统
公开(公告)号：US4683177A
公开(公告)日：1987-07-28
申请号：US889492
申请日：1986-07-25
申请人： Tomohiro Kinoshita , Seiichi Tanabe , Eishiro Sasakawa
发明人： Tomohiro Kinoshita , Seiichi Tanabe , Eishiro Sasakawa
IPC分类号： H01M8/12 , H01M8/04 , H01M8/06
CPC分类号： H01M8/04014 , H01M8/04022
摘要： A power generation system in a fuel cell having an air preheater for preheating air for a fuel cell reaction which will be fed to an afterburner of a high-temperature solid electrolyte type fuel cell, characterized by disposing, between the air preheater and the afterburner, a combustor for performing an additional combustion after the temperature of the air for the reaction has been elevated by the air preheater.
摘要翻译：一种燃料电池中的发电系统，其具有用于对用于燃料电池反应的空气进行预热的空气预热器，所述空气预热器将被供给到高温固体电解质型燃料电池的再加力器，其特征在于，在所述空气预热器和所述后燃器之间，用于通过空气预热器升高用于反应的空气的温度之后进行附加燃烧的燃烧器。

7. 发明申请

US20100310785A1 VACUUM PROCESSING APPARATUS AND OPERATING METHOD FOR VACUUM PROCESSING APPARATUS 失效
标题翻译：真空加工设备的真空处理设备和操作方法
公开(公告)号：US20100310785A1
公开(公告)日：2010-12-09
申请号：US12864624
申请日：2008-06-27
申请人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
发明人： Eishiro Sasakawa , Masahiro Sakaki , Shigekazu Ueno , Keisuke Kawamura , Akemi Takano
IPC分类号： C23C16/00 , B05C11/00 , B05D3/00
CPC分类号： C23C16/4401 , C23C16/4404 , C23C16/4405 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).
摘要翻译：本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。

8. 发明授权

US08481848B2 Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US08481848B2
公开(公告)日：2013-07-09
申请号：US12670557
申请日：2009-01-07
申请人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
发明人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/02366 , H01L31/077 , H01L31/18 , Y02E10/50
摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.
摘要翻译：提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。

9. 发明申请

US20100206373A1 PHOTOVOLTAIC DEVICE 失效
标题翻译：光电器件
公开(公告)号：US20100206373A1
公开(公告)日：2010-08-19
申请号：US12670557
申请日：2009-01-07
申请人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
发明人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/02366 , H01L31/077 , H01L31/18 , Y02E10/50
摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.
摘要翻译：提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。此外，其中形成有光电转换层3的基板1的表面的尺寸为至少1μm见方的光电器件100，其中晶体硅i层42具有表面的基板面内分布通过不小于5且不大于8的拉曼峰比的平均值，不小于1且不大于3的拉曼峰比的标准偏差，以及拉曼峰值比的拉曼峰值比不大于4，不小于0％且不大于10％。

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