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1. 发明申请

US20050103266A1 Accelerated plasma clean 有权
标题翻译：加速等离子清洁
公开(公告)号：US20050103266A1
公开(公告)日：2005-05-19
申请号：US10968420
申请日：2004-10-18
申请人： Shankar Chandran , Scott Hendrickson , Gwendolyn Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar Chandran , Scott Hendrickson , Gwendolyn Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B9/08 , C23C16/44 , H01L21/304 , C25F1/00 , C23C16/00
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.
摘要翻译：一种减少使用反应性等离子体清洗工艺清洁处理室所需时间的方法和装置。在基本上纯的惰性气体气体的流中，在Astron氟源发生器中形成等离子体。在形成等离子体之后，引入氟源气体的流动，使得氟源流以不大于1.67标准立方厘米/秒的速度加速（scc / s < 2 ）。以这种方式，等离子体包含多个自由基和解离的惰性气体原子，限定清洁混合物。惰性气体与氟源的比例大于1:1。

2. 发明授权

US07506654B2 Accelerated plasma clean 有权
公开(公告)号：US07506654B2
公开(公告)日：2009-03-24
申请号：US10968420
申请日：2004-10-18
申请人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.

3. 发明授权

US06374831B1 Accelerated plasma clean 有权
公开(公告)号：US06374831B1
公开(公告)日：2002-04-23
申请号：US09246036
申请日：1999-02-04
申请人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar N. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B700
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second2 (scc/s2). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.

4. 发明授权

US06814087B2 Accelerated plasma clean 有权
标题翻译：加速等离子清洁
公开(公告)号：US06814087B2
公开(公告)日：2004-11-09
申请号：US10115665
申请日：2002-04-03
申请人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B700
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of removing residue from a substrate processing chamber. In one embodiment the method comprises flowing an inert gas into a remote plasma chamber and forming a plasma within the chamber; maintaining the plasma while creating a plurality of reactive fluorine species by flowing a fluorine-containing gas into the remote plasma chamber and increasing a flow rate of a fluorine-containing gas from a first flow rate to a second flow rate higher than the first flow rate; and introducing the plurality of reactive fluorine species into the substrate processing chamber.

5. 发明授权

US06495233B1 Apparatus for distributing gases in a chemical vapor deposition system 有权
标题翻译：用于在化学气相沉积系统中分配气体的装置
公开(公告)号：US06495233B1
公开(公告)日：2002-12-17
申请号：US09609994
申请日：2000-07-05
申请人： Inna Shmurun , Scott Hendrickson , Gwendolyn Jones , Shankar Venkataraman , Son T. Nguyen , I-Chun Eugenia Liu
发明人： Inna Shmurun , Scott Hendrickson , Gwendolyn Jones , Shankar Venkataraman , Son T. Nguyen , I-Chun Eugenia Liu
IPC分类号： B32B302
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096 , H01J37/32458 , Y10T428/21 , Y10T428/211 , Y10T428/218
摘要： A lid assembly for a semiconductor processing apparatus having at least two chambers comprises a lid plate having a first side and a second side and a plasma generation source mounted to the first side of the lid plate. Additionally, at least two gas boxes are coupled to the first side of the lid of the lid plate, and a divider is coupled between the plasma generation source and the at least two gas boxes.
摘要翻译：一种用于具有至少两个腔室的半导体处理装置的盖组件，包括具有第一侧和第二侧的盖板和安装在盖板的第一侧上的等离子体产生源。此外，至少两个气体箱耦合到盖板的盖的第一侧，并且分隔器耦合在等离子体产生源和至少两个气体箱之间。

6. 发明申请

US20070286963A1 APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO A ROTATING IRRADIANCE PATTERN OF UV RADIATION 有权
标题翻译：将基材暴露于紫外线辐射的旋转辐照图案的装置和方法
公开(公告)号：US20070286963A1
公开(公告)日：2007-12-13
申请号：US11686881
申请日：2007-03-15
申请人： Juan Rocha-Alvarez , Thomas Nowak , Dale Du Bois , Sanjeev Baluja , Scott Hendrickson , Dustin Ho , Andrzei Kaszuba , Tom Cho
发明人： Juan Rocha-Alvarez , Thomas Nowak , Dale Du Bois , Sanjeev Baluja , Scott Hendrickson , Dustin Ho , Andrzei Kaszuba , Tom Cho
IPC分类号： C08F2/48 , B01J19/08
CPC分类号： B05D3/0209 , B05D3/0493 , B05D3/067 , H01L21/31058 , H01L21/67115
摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
摘要翻译：本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。还公开了其他实施例。

7. 发明申请

US20070257205A1 APPARATUS AND METHOD FOR TREATING A SUBSTRATE WITH UV RADIATION USING PRIMARY AND SECONDARY REFLECTORS 有权
标题翻译：用初级和次级反射器处理具有紫外线辐射的基板的装置和方法
公开(公告)号：US20070257205A1
公开(公告)日：2007-11-08
申请号：US11686878
申请日：2007-03-15
申请人： Juan Rocha-Alvarez , Thomas Nowak , Dale Du Bois , Sanjeev Baluja , Scott Hendrickson , Dustin Ho , Andrzei Kaszuba , Tom Cho
发明人： Juan Rocha-Alvarez , Thomas Nowak , Dale Du Bois , Sanjeev Baluja , Scott Hendrickson , Dustin Ho , Andrzei Kaszuba , Tom Cho
IPC分类号： B01J19/08
CPC分类号： B05D3/067
摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
摘要翻译：本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。还公开了其他实施例。

8. 发明授权

US08309421B2 Dual-bulb lamphead control methodology 有权
标题翻译：双灯泡灯头控制方法
公开(公告)号：US08309421B2
公开(公告)日：2012-11-13
申请号：US13011687
申请日：2011-01-21
申请人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
发明人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译：本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。闭环控制确保从基板到基板的工艺均匀性。辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。

9. 发明授权

US06443435B1 Vaporization of precursors at point of use 失效
标题翻译：前体在使用点的蒸发
公开(公告)号：US06443435B1
公开(公告)日：2002-09-03
申请号：US09695488
申请日：2000-10-23
申请人： Scott Hendrickson
发明人： Scott Hendrickson
IPC分类号： B01F304
CPC分类号： H01J37/3244 , C23C16/4485 , Y10S261/65
摘要： An apparatus and method for vaporizing and delivering liquid precursors to a processing chamber is provided. In one aspect, the apparatus is a liquid delivery system including a liquid supply, a vaporization assembly fluidicly coupled to the liquid supply, the vaporization assembly consisting essentially of an ampoule and a mass flow controller connected to the ampoule, and a processing chamber fluidicly coupled to the vaporization assembly. The liquid precursor is vaporized in the ampoule. In a preferred embodiment, the ampoule is located adjacent the processing chamber to provide point of use vaporization of the liquid precursor. In another aspect, the method includes providing a liquid supply containing a liquid precursor, delivering the precursor to an ampoule, vaporizing a portion of the liquid precursor in the ampoule, and flowing vaporized precursor to a processing chamber.
摘要翻译：提供了一种用于将液体前体蒸发并输送到处理室的设备和方法。在一个方面，该装置是液体输送系统，其包括液体供应源，流体耦合到液体供应源的汽化组件，蒸发组件基本上由安瓿和连接到安瓿的质量流量控制器组成，以及处理室，其流体耦合到蒸发组件。液体前体在安瓿中蒸发。在优选实施例中，安瓿位于处理室附近以提供液体前体的使用点蒸发。另一方面，所述方法包括提供含有液体前体的液体供应源，将前体输送到安瓿，蒸发安瓿中的液体前体的一部分，并将蒸发前体流动到处理室。

10. 发明授权

US06300255B1 Method and apparatus for processing semiconductive wafers 有权
标题翻译：用于处理半导体晶片的方法和设备
公开(公告)号：US06300255B1
公开(公告)日：2001-10-09
申请号：US09257467
申请日：1999-02-24
申请人： Shankar Venkataranan , Scott Hendrickson , Inna Shmurun , Son T. Nguyen
发明人： Shankar Venkataranan , Scott Hendrickson , Inna Shmurun , Son T. Nguyen
IPC分类号： H01L2131
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO2) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.
摘要翻译：提供了一种用于通过化学气相沉积在大直径（例如，300mm）半导体晶片上形成薄膜绝缘层的氧化硅（SiO 2）的方法和装置，所述氧化硅（SiO 2）的绝缘层从边缘到边缘具有高度均匀性，并通过晶片中心的任何直径。通过将第一反应性气体流和第二反应气体流分别靠近晶片的暴露表面引导以由具有绝缘层的气体涂覆而获得这些高度的均匀度，气体流混合在一起反应以在晶片上沉积绝缘层; 形成第一和第二气流的漩涡状旋转混合物以将其气体充分混合在一起; 形成高度均匀的反应性气体混合物; 并迅速将反应性气体的混合物流过晶片表面上和表面。该设备还提供双晶片处理室腔。

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