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1. 发明授权

US06278600B1 Electrostatic chuck with improved temperature control and puncture resistance 有权
标题翻译：静电吸盘具有改善的温度控制和抗穿刺性
公开(公告)号：US06278600B1
公开(公告)日：2001-08-21
申请号：US09231318
申请日：1999-01-13
申请人： Shamouil Shamouilian , Arnold Kholodenko , Semyon Kats , Semyon Sherstinsky , Jon Clinton , Surinder Bedi
发明人： Shamouil Shamouilian , Arnold Kholodenko , Semyon Kats , Semyon Sherstinsky , Jon Clinton , Surinder Bedi
IPC分类号： H01G2300
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833
摘要： Apparatus for supporting a workpiece and method of making same. The apparatus comprises a flex circuit laminated to a contoured support pedestal. The flex circuit includes a reinforced layer to improve puncture resistance of the flex circuit. The top surface of the chuck has a contoured topography that is achieved by machining the upper surface of the pedestal prior to lamination of the flex circuit to the pedestal. The contoured topography improves the flow of backside cooling gas resulting in a more uniform wafer temperature profile.
摘要翻译：用于支撑工件的装置及其制造方法。该装置包括层压到轮廓支撑基座上的柔性电路。柔性电路包括增强层，以提高柔性电路的抗穿刺性。卡盘的顶表面具有轮廓的形貌，其通过在将柔性电路层压到基座之前加工基座的上表面来实现。轮廓形状改善了背面冷却气体的流动，导致更均匀的晶片温度分布。

2. 发明授权

US06557248B1 Method of fabricating an electrostatic chuck 失效
标题翻译：制造静电卡盘的方法
公开(公告)号：US06557248B1
公开(公告)日：2003-05-06
申请号：US09087332
申请日：1998-05-29
申请人： Shamouil Shamouilian , Manoocher Birang , John F. Cameron , Chandra Deshpandey , Alfred Goldspeil , Ron Northrup , Semyon Sherstinsky , Sasson Someth
发明人： Shamouil Shamouilian , Manoocher Birang , John F. Cameron , Chandra Deshpandey , Alfred Goldspeil , Ron Northrup , Semyon Sherstinsky , Sasson Someth
IPC分类号： H01R4300
CPC分类号： C23C16/45521 , C23C16/4586 , H01L21/67103 , H01L21/6831 , H01L21/6833 , H02N13/00 , Y10T29/49117 , Y10T279/23
摘要： A method of fabricating an electrostatic member 33 for holding a substrate 45 in a process chamber 80 containing erosive process gas. The method comprises the steps of forming an electrostatic member 33 comprising an insulator or dielectric layer 35 covering an electrically conductive layer, and shaping the electrostatic member 33 to form a dielectric covered electrode and an electrical connector 55 attached to the dielectric covered electrode 50 to conduct charge to the dielectric covered electrode 50.
摘要翻译：一种制造静电部件33的方法，用于将基板45保持在包含腐蚀性处理气体的处理室80中。该方法包括以下步骤：形成包括覆盖导电层的绝缘体或电介质层35的静电部件33，并且使静电部件33成形以形成介电覆盖电极和连接到电介质被覆电极50的电连接器55 充电到介电覆盖电极50。

3. 发明授权

US5883778A Electrostatic chuck with fluid flow regulator 失效
标题翻译：带流体流量调节器的静电吸盘
公开(公告)号：US5883778A
公开(公告)日：1999-03-16
申请号：US503790
申请日：1995-07-18
申请人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
发明人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30. The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40, (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30, and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50. Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35, and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115, the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20.
摘要翻译：本发明的静电卡盘20能够在基板30上保持基本均匀的温度。卡盘20包括静电部件35，静电部件35包括（i）覆盖电极40的绝缘体45，（ii）基本上平面和保形接触能够与衬底30相符的表面50，以及（iii）终止于接触表面50处的导管105，用于将热传递流体提供给接触表面50.施加电压到静电构件35的电极40，静电地保持衬底 30，以形成具有（1）泄漏部分115（其中传热流体泄漏）的外周110，以及（2）传热流体基本上不会泄漏的密封部分130。提供流体流量调节器135，用于使不同流速的传热流体流过静电构件35中的管道105，以提供（i）传热流体通过与外部的密封部分130相邻的导管105的第一流量静电构件35的周边110，以及（ii）通过与泄漏部分115相邻的导管105的传热流体的第二流量，第二流速高于第一流速，以保持基本上均匀的温度 30夹在卡盘20上。

4. 发明授权

US5753132A Method of making electrostatic chuck with conformal insulator film 失效
标题翻译：用保形绝缘膜制作静电卡盘的方法
公开(公告)号：US5753132A
公开(公告)日：1998-05-19
申请号：US725482
申请日：1996-10-04
申请人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
发明人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B44C1/22
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.
摘要翻译：一种用于制造静电卡盘（20）的方法，包括以下步骤：（c）形成具有上表面的基部（80），其中具有冷却槽（85），所述凹槽的尺寸和分布用于将冷却剂保持在其中用于冷却基座; 和（d）通过以下步骤将电绝缘体层（45）施加到基底上的凹槽上：（i）将基底放置在压力成形设备（25）中并将电绝缘体层施加在基底中的凹槽上; 和（ii）将足够高的压力施加到绝缘体层上以使绝缘体层压到沟槽上，以形成与基底上的凹槽保形的基本上连续的电绝缘层。

5. 发明授权

US5671117A Electrostatic chuck 失效
标题翻译：静电吸盘
公开(公告)号：US5671117A
公开(公告)日：1997-09-23
申请号：US626667
申请日：1996-03-27
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命并可能损坏卡盘周围的等离子体材料。

6. 发明授权

US5745331A Electrostatic chuck with conformal insulator film 失效
标题翻译：带保形绝缘膜的静电吸盘
公开(公告)号：US5745331A
公开(公告)日：1998-04-28
申请号：US381786
申请日：1995-01-31
申请人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
发明人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.
摘要翻译：用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

7. 发明授权

US5634266A Method of making a dielectric chuck 失效
标题翻译：制造电介质卡盘的方法
公开(公告)号：US5634266A
公开(公告)日：1997-06-03
申请号：US449135
申请日：1995-05-24
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00 , H01R43/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种制造用于将半导体晶片固定在具有多个孔的基座上用于在晶片下引入冷却气体的电介质卡盘的方法。根据该方法，晶片通过静电力保持在夹在两个电介质层之间的电极层的层压体上，使得层压体在晶片上呈现超过电极层的外边缘相当距离的平坦表面。层叠结构方法确保了超过电极外边缘的大晶圆区域与层压板接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极之间的电介质材料的路径长度来提供更长的使用寿命层和可能损坏的卡盘周围的等离子体材料。

8. 发明授权

US06464795B1 Substrate support member for a processing chamber 失效
标题翻译：用于处理室的基板支撑构件
公开(公告)号：US06464795B1
公开(公告)日：2002-10-15
申请号：US09563573
申请日：2000-05-03
申请人： Semyon Sherstinsky , Calvin Augason , Leonel A. Zuniga , Jun Zhao , Talex Sajoto , Leonid Selyutin , Joseph Yudovsky , Maitreyee Mahajani , Steve G. Ghanayem , Tai T. Ngo , Arnold Kholodenko
发明人： Semyon Sherstinsky , Calvin Augason , Leonel A. Zuniga , Jun Zhao , Talex Sajoto , Leonid Selyutin , Joseph Yudovsky , Maitreyee Mahajani , Steve G. Ghanayem , Tai T. Ngo , Arnold Kholodenko
IPC分类号： G23C1600
CPC分类号： C23C16/45521 , C23C16/4586 , H01L21/67109 , H01L21/6838 , H01L21/68785
摘要： A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.
摘要翻译：一种用于在处理室中支撑衬底的支撑构件，所述支撑构件具有具有一个或多个隔离的凹陷区域的衬底支撑表面。真空通道和气体通道沿着公共平面形成在支撑构件中，并且分别耦合到真空源和气体源。气体通道包括包围真空通道的两个或更多个同心设置的环形气体通道。真空通道由多个管道联接到支撑表面，特别是连接到一个或多个凹陷区域。导管的一部分沿直径设置在至少一个环形气体通道的外部，并通过旁通通道与真空通道连通。

9. 发明授权

US06464790B1 Substrate support member 失效
标题翻译：基材支撑件
公开(公告)号：US06464790B1
公开(公告)日：2002-10-15
申请号：US09527341
申请日：2000-03-17
申请人： Semyon Sherstinsky , Arnold Kholodenko , Calvin Augason , Samuel Wilson , Michael Phillips , Leonel Zuniga
发明人： Semyon Sherstinsky , Arnold Kholodenko , Calvin Augason , Samuel Wilson , Michael Phillips , Leonel Zuniga
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586 , C30B25/12 , H01L21/6838
摘要： The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.
摘要翻译：本发明通常提供适于提供真空夹紧的支撑构件。一方面，提供具有上表面的支撑构件，其具有限定内凹部的外凸起部。内凹部与真空源流体连通。支撑构件可以包括多个凸起的支撑部分，其具有与其相邻的一个或多个凹部，所述凸起支撑部分在凹部上方具有相同的高度。凸起部分和凹陷部分之间的过渡是渐进的，并且由延伸穿过衬底支撑件的上表面的孔形成的孔是圆形的，以消除上边缘处的尖锐边缘和高度的快速变化。

10. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

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