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1. 发明申请

US20090272980A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20090272980A1
公开(公告)日：2009-11-05
申请号：US12272624
申请日：2008-11-17
申请人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
发明人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
IPC分类号： H01L31/036 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/124
摘要： A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode.
摘要翻译：包括沟道的半导体，包括源电极，漏电极和像素区域定义部件的数据线形成在栅极绝缘层上，钝化层沉积在数据线，像素区域定义部件和半导体的通道。第一感光膜图案包括设置在与漏电极相对应的位置处的第一部分和比第一部分更厚的第二部分，并且在与像素区域定义部件对应的位置处曝光钝化层，形成在钝化层，蚀刻通过使用第一感光膜图案而曝光的钝化层作为蚀刻掩模，并且通过蚀刻第一感光膜图案的整个表面以除去第一部分来形成第二感光膜图案。蚀刻由钝化层露出的像素区域定义构件，蚀刻通过去除第一部分而露出的钝化层和通过去除像素区域定义构件而暴露的半导体。形成用于像素电极的导体层，并且去除第二感光膜图案以形成像素电极。

2. 发明申请

US20100001277A1 THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100001277A1
公开(公告)日：2010-01-07
申请号：US12498526
申请日：2009-07-07
申请人： Ki-Hun JEONG , Seung-Hwan SHIM , Joo-Han KIM , Hong-Kee CHIN
发明人： Ki-Hun JEONG , Seung-Hwan SHIM , Joo-Han KIM , Hong-Kee CHIN
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

3. 发明申请

US20120208330A1 THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120208330A1
公开(公告)日：2012-08-16
申请号：US13450643
申请日：2012-04-19
申请人： Ki-Hun JEONG , Seung-Hwan SHIM , Joo-Han KIM , Hong-Kee CHIN
发明人： Ki-Hun JEONG , Seung-Hwan SHIM , Joo-Han KIM , Hong-Kee CHIN
IPC分类号： H01L21/336
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/4908
摘要： A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译：制造薄膜晶体管阵列基板的方法包括：在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案，钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

4. 发明申请

US20110133198A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20110133198A1
公开(公告)日：2011-06-09
申请号：US13026403
申请日：2011-02-14
申请人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
发明人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
IPC分类号： H01L29/786 , H01L33/16
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
摘要翻译：薄膜晶体管，显示装置及其制造方法。薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。第一结晶度高于第二结晶度。

5. 发明申请

US20100123861A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20100123861A1
公开(公告)日：2010-05-20
申请号：US12547039
申请日：2009-08-25
申请人： Seung-Hwan SHIM , Gug-Rae JO , Sung-Hoon YANG , Kap-Soo YOON , Ki-Hun JEONG , Jae-Ho CHOI , Yang-Ho JUNG
发明人： Seung-Hwan SHIM , Gug-Rae JO , Sung-Hoon YANG , Kap-Soo YOON , Ki-Hun JEONG , Jae-Ho CHOI , Yang-Ho JUNG
IPC分类号： G02F1/1335 , H01L21/28
CPC分类号： G02F1/136227 , G02F1/133514 , G02F2001/133565 , G02F2001/133567 , H01L27/1248
摘要： A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.
摘要翻译：液晶显示器包括：设置在第一基板上的第一基板，栅极线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极，面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

6. 发明申请

US20090174690A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20090174690A1
公开(公告)日：2009-07-09
申请号：US12206327
申请日：2008-09-08
申请人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
发明人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
IPC分类号： G06F3/038
CPC分类号： H01L29/78669 , G09G3/3233 , G09G2300/0439 , G09G2300/0842 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L27/3262 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.
摘要翻译：显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

7. 发明申请

US20100019996A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20100019996A1
公开(公告)日：2010-01-28
申请号：US12486542
申请日：2009-06-17
申请人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
发明人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
IPC分类号： G09G3/30 , H01L21/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L29/7869
摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.
摘要翻译：显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案，电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

8. 发明申请

US20100001275A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20100001275A1
公开(公告)日：2010-01-07
申请号：US12498534
申请日：2009-07-07
申请人： Joo-Han KIM , Ki-Hun JEONG , Seung-Hwan SHIM
发明人： Joo-Han KIM , Ki-Hun JEONG , Seung-Hwan SHIM
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1288 , Y10S438/951
摘要： A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.
摘要翻译：薄膜晶体管（“TFT”）基板及其制造方法包括：绝缘基板; 栅极布线，其布置在所述绝缘基板上并且包括栅极线和栅电极; 设置在栅电极上的半导体图案; 数据布线，其布置在半导体图案上并且包括数据线，源电极和漏电极; 钝化层，其包括沉积在数据布线上的第一子钝化层和第二子钝化层; 以及通过设置在所述钝化层中的接触孔电连接到所述漏电极的像素电极，其中所述第二子钝化层具有比所述第一子钝化层更低的密度。

9. 发明申请

US20090152554A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20090152554A1
公开(公告)日：2009-06-18
申请号：US12260464
申请日：2008-10-29
申请人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
发明人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
摘要翻译：薄膜晶体管，显示装置及其制造方法。薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的第二部分，其与输入电极或输出电极重叠，并具有第二结晶度。第一结晶度高于第二结晶度。

10. 发明申请

US20110261040A1 INFORMATION DETECTION DISPLAY 有权
标题翻译：信息检测显示
公开(公告)号：US20110261040A1
公开(公告)日：2011-10-27
申请号：US13090991
申请日：2011-04-20
申请人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
发明人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
IPC分类号： G09G5/00
CPC分类号： G06F3/0418 , G06F3/042
摘要： An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.
摘要翻译：信息检测装置包括：多个光检测单元，每个光检测单元被配置为检测光; 多个传感器扫描驱动器，每个传感器扫描驱动器被配置为将传感器扫描信号施加到光感测感测信号处理器，被配置为接收由所述光感测单元检测到的位置信息; 多个偏置施加单元，每个偏置施加单元被配置为向所述光感测单元施加偏置电压; 其中每个偏置施加单元施加不同的偏置电压极性。

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