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1. 发明申请

US20090272980A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20090272980A1
公开(公告)日：2009-11-05
申请号：US12272624
申请日：2008-11-17
申请人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
发明人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
IPC分类号： H01L31/036 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/124
摘要： A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode.
摘要翻译：包括沟道的半导体，包括源电极，漏电极和像素区域定义部件的数据线形成在栅极绝缘层上，钝化层沉积在数据线，像素区域定义部件和半导体的通道。第一感光膜图案包括设置在与漏电极相对应的位置处的第一部分和比第一部分更厚的第二部分，并且在与像素区域定义部件对应的位置处曝光钝化层，形成在钝化层，蚀刻通过使用第一感光膜图案而曝光的钝化层作为蚀刻掩模，并且通过蚀刻第一感光膜图案的整个表面以除去第一部分来形成第二感光膜图案。蚀刻由钝化层露出的像素区域定义构件，蚀刻通过去除第一部分而露出的钝化层和通过去除像素区域定义构件而暴露的半导体。形成用于像素电极的导体层，并且去除第二感光膜图案以形成像素电极。

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