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1. 发明授权

US08952876B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08952876B2
公开(公告)日：2015-02-10
申请号：US12900846
申请日：2010-10-08
申请人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
发明人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
IPC分类号： G09G3/36 , G11C19/28 , G02F1/1362 , G11C19/18
CPC分类号： G11C19/28 , G02F1/1362 , G02F2202/104 , G11C19/184
摘要： A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.
摘要翻译：显示基板包括基底基板，形成在基底基板上的第一绝缘层，包括具有第一绝缘层的像素电极的像素，以及包括设置在外围区域上以驱动像素的电路晶体管的电路。像素包括形成在其上形成有第一绝缘层的基底基板上的第一通道。第一通道包括形成在第一通道上彼此间隔开的多晶硅层，第一源电极和第一漏极，以及形成在第一源电极和第一漏电极上的第一栅电极，由透明导电材料形成的第一通道。多晶硅层通过第一栅电极形成在靠近第一栅电极的第一通道的前通道部分处。

2. 发明授权

US08598577B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08598577B2
公开(公告)日：2013-12-03
申请号：US13177783
申请日：2011-07-07
申请人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
发明人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/458
摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要翻译：显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和像素电极。薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。像素电极与漏电极电连接。

3. 发明申请

US20120133873A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20120133873A1
公开(公告)日：2012-05-31
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1333 , H01L33/16
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

4. 发明授权

US08183570B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US08183570B2
公开(公告)日：2012-05-22
申请号：US12946953
申请日：2010-11-16
申请人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

5. 发明申请

US20120018720A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20120018720A1
公开(公告)日：2012-01-26
申请号：US13177783
申请日：2011-07-07
申请人： Jae-Woo PARK , Dong-Hoon LEE , Sung-Haeng CHO , Woo-Geun LEE , Hye-Young RYU , Young-Joo CHOI
发明人： Jae-Woo PARK , Dong-Hoon LEE , Sung-Haeng CHO , Woo-Geun LEE , Hye-Young RYU , Young-Joo CHOI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/458
摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要翻译：显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和像素电极。薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。像素电极与漏电极电连接。

6. 发明申请

US20110146066A1 DISPLAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF REPAIRING THE SAME 有权
标题翻译：显示基板，包括其的液晶显示装置及其修复方法
公开(公告)号：US20110146066A1
公开(公告)日：2011-06-23
申请号：US13035473
申请日：2011-02-25
申请人： DUK SUNG KIM , Sung Haeng Cho
发明人： DUK SUNG KIM , Sung Haeng Cho
IPC分类号： H01R43/00
CPC分类号： G02F1/1309 , G02F1/1345 , G09G2330/08 , Y10T29/49117
摘要： A display substrate includes a signal line formed on a substrate, a connection pad receiving a driving signal from the signal line, at least one repair line formed along an outer periphery of the substrate, a first auxiliary repair line overlapping the signal line at a first position with an insulating layer disposed therebetween, a second auxiliary repair line overlapping the signal line at a second position with the insulating layer disposed therebetween, and a connection line connecting the second auxiliary repair line to the at least one repair line.
摘要翻译：显示基板包括形成在基板上的信号线，接收来自信号线的驱动信号的连接焊盘，沿着基板的外周形成的至少一个修复线，第一辅助修复线，与第一位于其间设置有绝缘层的第二辅助修复线，第二辅助修复线与位于其间的绝缘层的第二位置处的信号线重叠，以及将第二辅助修复线连接到至少一条修复线的连接线。

7. 发明申请

US20110057194A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20110057194A1
公开(公告)日：2011-03-10
申请号：US12946953
申请日：2010-11-16
申请人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L33/16
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

8. 发明申请

US20090174690A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20090174690A1
公开(公告)日：2009-07-09
申请号：US12206327
申请日：2008-09-08
申请人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
发明人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
IPC分类号： G06F3/038
CPC分类号： H01L29/78669 , G09G3/3233 , G09G2300/0439 , G09G2300/0842 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L27/3262 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.
摘要翻译：显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

9. 发明授权

US09245966B2 Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same 有权
标题翻译：接线，薄膜晶体管，薄膜晶体管面板及其制造方法
公开(公告)号：US09245966B2
公开(公告)日：2016-01-26
申请号：US13242257
申请日：2011-09-23
申请人： Jae-Woo Park , Sung-Haeng Cho , Kyong-Sub Kim , Dong-Yeon Cho
发明人： Jae-Woo Park , Sung-Haeng Cho , Kyong-Sub Kim , Dong-Yeon Cho
IPC分类号： H01L29/49 , H01L29/45 , H01L29/786
CPC分类号： H01L29/45 , H01L29/458 , H01L29/78669 , H01L29/78678 , H01L29/7869
摘要： A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.
摘要翻译：薄膜晶体管包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体，以及半导体上的间隔开的漏电极和源电极。漏电极和源电极中的每一个包括防止金属原子扩散的第一金属扩散防止层和第一金属扩散防止层上的第二金属扩散防止层。第一和第二金属扩散防止层中的至少一个包括柱状结构中的大致垂直于下层的方向的晶粒。第一金属扩散防止层的第一晶界和第二金属扩散防止层的第二晶界在垂直于半导体的方向上基本上不连续。

10. 发明授权

US08450850B2 Thin-film transistor substrate and method of manufacturing the same 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08450850B2
公开(公告)日：2013-05-28
申请号：US13193413
申请日：2011-07-28
申请人： Hong Long Ning , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
发明人： Hong Long Ning , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
IPC分类号： H01L23/52
CPC分类号： H01L29/458 , B82Y10/00 , B82Y30/00 , H01L21/76877 , H01L27/124 , H01L29/41733 , H01L29/78684 , H01L51/0048 , H01L2221/1094
摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.
摘要翻译：提供一种薄膜晶体管（TFT）基板及其制造方法。该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

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