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    • 2. 发明授权
    • Thin film transistor and method of forming the same
    • 薄膜晶体管及其形成方法
    • US08853699B2
    • 2014-10-07
    • US12902786
    • 2010-10-12
    • Seung-Ha ChoiKyoung-Jae ChungYoung-Wook Lee
    • Seung-Ha ChoiKyoung-Jae ChungYoung-Wook Lee
    • H01L29/10H01L29/423H01L29/786H01L27/12H01L29/66
    • H01L29/7869H01L27/1214H01L27/1225H01L29/42384H01L29/66742H01L29/66969
    • Disclosed are a thin film transistor and a method of forming the thin film transistor, wherein the thin film transistor includes a gate electrode, an oxide semiconductor pattern, a first gate insulating layer pattern interposed between the gate electrode and the oxide semiconductor pattern, wherein the first gate insulating layer pattern has an island shape or has two portions of different thicknesses from each other, a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern, wherein the source electrode and the drain electrode are separated from each other, and a first insulating layer pattern placed between the source electrode and drain electrode and the oxide semiconductor pattern, wherein the first insulating layer pattern partially contacts the source electrode and drain electrode and the first gate insulating layer pattern, and wherein the first insulating layer is enclosed by an outer portion.
    • 公开了一种薄膜晶体管和形成薄膜晶体管的方法,其中薄膜晶体管包括栅电极,氧化物半导体图案,插入在栅电极和氧化物半导体图案之间的第一栅绝缘层图案,其中 第一栅极绝缘层图案具有岛状或具有彼此不同厚度的两个部分,与氧化物半导体图案电连接的源电极和漏电极,其中源电极和漏电极彼此分离,以及 位于源电极和漏极之间的第一绝缘层图案和氧化物半导体图案,其中第一绝缘层图案部分地接触源电极和漏电极以及第一栅极绝缘层图案,并且其中第一绝缘层被 外部。
    • 3. 发明申请
    • THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
    • 薄膜晶体管及其形成方法
    • US20110198603A1
    • 2011-08-18
    • US12902786
    • 2010-10-12
    • SEUNG-HA CHOIKyoung-Jae ChungYoung-Wook Lee
    • SEUNG-HA CHOIKyoung-Jae ChungYoung-Wook Lee
    • H01L29/786H01L21/336
    • H01L29/7869H01L27/1214H01L27/1225H01L29/42384H01L29/66742H01L29/66969
    • Disclosed are a thin film transistor and a method of forming the thin film transistor.The thin film transistor includes a gate electrode, an oxide semiconductor pattern, a first gate insulating layer pattern interposed between the gate electrode and the oxide semiconductor pattern, wherein the first gate insulating layer pattern has an island shape or has two portions of different thicknesses from each other, a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern, wherein the source electrode and the drain electrode are separated from each other, and a first insulating layer pattern placed between the source electrode and drain electrode and the oxide semiconductor pattern, wherein the first insulating layer pattern partially contacts the source electrode and drain electrode and the first gate insulating layer pattern, and wherein the first insulating layer is enclosed by an outer portion.
    • 公开了薄膜晶体管和形成薄膜晶体管的方法。 薄膜晶体管包括栅电极,氧化物半导体图案,插入在栅极电极和氧化物半导体图案之间的第一栅极绝缘层图案,其中第一栅极绝缘层图案具有岛状或具有两个不同厚度的部分 电连接到所述氧化物半导体图案的源电极和漏电极,其中所述源电极和所述漏电极彼此分离;以及第一绝缘层图案,位于所述源电极和漏极之间以及所述氧化物半导体 图案,其中所述第一绝缘层图案部分地接触所述源电极和漏电极以及所述第一栅绝缘层图案,并且其中所述第一绝缘层被外部包围。
    • 10. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US08144280B2
    • 2012-03-27
    • US12152619
    • 2008-05-14
    • Woo-Geun LeeShi-Yul KimJae-Hyoung YounYoung-Wook Lee
    • Woo-Geun LeeShi-Yul KimJae-Hyoung YounYoung-Wook Lee
    • G02F1/136G02F1/1343
    • G02F1/136286G02F1/136209G02F2001/13606G02F2001/136218G02F2001/136222G02F2201/40
    • A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.
    • 提供了一种液晶显示器,用于防止光泄漏,同时提高了开口率和减少了数据线的负载。 液晶显示器包括形成在绝缘基板上并且彼此分开的栅极线和存储电极线,与栅极线相交的第一数据线和第二数据线,由栅极线和第一栅极线限定的第一像素电极 数据线和由栅极线和第二数据线限定并与第一像素电极相邻的第二像素电极。 此外,包括第一像素电极和第二像素电极之间的阻挡电极,其中第一数据线的至少一部分设置在第一像素电极下方,并且阻挡电极的至少一部分设置在第二像素电极下方 并且除了第一条数据线之外。