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1. 发明授权

US08723179B2 Thin film transistor panel having an etch stopper on semiconductor 有权
标题翻译：薄膜晶体管板在半导体上具有蚀刻停止层
公开(公告)号：US08723179B2
公开(公告)日：2014-05-13
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

2. 发明授权

US08735890B2 Display substrate and method of manufacturing the display substrate 有权
标题翻译：显示基板和制造显示基板的方法
公开(公告)号：US08735890B2
公开(公告)日：2014-05-27
申请号：US13328658
申请日：2011-12-16
申请人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
发明人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/1288
摘要： In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.
摘要翻译：在显示基板和显示基板的制造方法中，显示基板包括数据线，通道图案，绝缘图案和像素电极。数据线沿着基底基板上的方向延伸。通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。通道图案与输入电极和输出电极上的输出电极接触。绝缘图案与基底基板上的沟道图案间隔开，并且包括暴露输出电极的接触孔。像素电极形成在绝缘图案上，以通过接触孔与输出电极接触。因此，可以使氧化物半导体层的损伤最小化，并且可以简化制造工艺。

3. 发明授权

US08288766B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08288766B2
公开(公告)日：2012-10-16
申请号：US12555824
申请日：2009-09-09
申请人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在半导体氧化物层和栅电极。栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

4. 发明授权

US08796675B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08796675B2
公开(公告)日：2014-08-05
申请号：US13613566
申请日：2012-09-13
申请人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L35/24
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在半导体氧化物层和栅电极。栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

5. 发明授权

US08558230B2 Thin film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08558230B2
公开(公告)日：2013-10-15
申请号：US12756323
申请日：2010-04-08
申请人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
发明人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L29/7869
摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
摘要翻译：提供薄膜晶体管（TFT）基板及其制造方法。薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

6. 发明申请

US20100276686A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20100276686A1
公开(公告)日：2010-11-04
申请号：US12756323
申请日：2010-04-08
申请人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
发明人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
IPC分类号： H01L29/786 , H01L29/12 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L29/7869
摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
摘要翻译：提供薄膜晶体管（TFT）基板及其制造方法。薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

7. 发明授权

US09570621B2 Display substrate, method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US09570621B2
公开(公告)日：2017-02-14
申请号：US12977853
申请日：2010-12-23
申请人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
发明人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633
摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译：本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极，与所述氧化物半导体层的第二侧接触，并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

8. 发明申请

US20090184315A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有改进的电气特性的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20090184315A1
公开(公告)日：2009-07-23
申请号：US12355646
申请日：2009-01-16
申请人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
发明人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1296 , H01L29/4908
摘要： A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
摘要翻译：提供了可以具有高电荷迁移率并且可以实现宽显示装置的均匀电特性的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括具有通道并形成在绝缘基板上的氧化物半导体层，与氧化物半导体层重叠的栅极电极，设置在氧化物半导体层和栅电极之间的栅极绝缘膜，以及形成的钝化膜在氧化物半导体层和栅电极上。栅极绝缘膜和钝化膜中的至少一个含有含氟硅。

9. 发明授权

US07956947B2 Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same 有权
标题翻译：具有改进的电气特性的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07956947B2
公开(公告)日：2011-06-07
申请号：US12355646
申请日：2009-01-16
申请人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
发明人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
IPC分类号： G02F1/136 , G02F1/13 , H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1296 , H01L29/4908
摘要： A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
摘要翻译：提供了可以具有高电荷迁移率并且可以实现宽显示装置的均匀电特性的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括具有通道并形成在绝缘基板上的氧化物半导体层，与氧化物半导体层重叠的栅极电极，设置在氧化物半导体层和栅电极之间的栅极绝缘膜，以及形成的钝化膜在氧化物半导体层和栅电极上。栅极绝缘膜和钝化膜中的至少一个含有含氟硅。

10. 发明授权

US08501551B2 Thin film transistor array substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08501551B2
公开(公告)日：2013-08-06
申请号：US13608981
申请日：2012-09-10
申请人： Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
发明人： Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
摘要翻译：提供具有高电荷迁移率并且可以提高阈值电压的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括：绝缘基板; 形成在所述绝缘基板上的栅电极; 氧化物半导体层，其包括形成在所述栅电极上的低氧化物层和形成在所述低氧化物层上的上氧化物层，使得所述上氧化物层的氧浓度高于所述低氧化物层的氧浓度; 以及形成在氧化物半导体层上并且彼此分离的源电极和漏电极。

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