专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07273813B2 Wafer cleaning solution for cobalt electroless application 有权
标题翻译：用于钴无电镀的晶圆清洗液
公开(公告)号：US07273813B2
公开(公告)日：2007-09-25
申请号：US11053501
申请日：2005-02-08
申请人： Ramin Emami , Timothy Weidman , Sergey Lopatin , Hongbin Fang , Arulkumar Shanmugasundram
发明人： Ramin Emami , Timothy Weidman , Sergey Lopatin , Hongbin Fang , Arulkumar Shanmugasundram
IPC分类号： H01L21/44
CPC分类号： C23C18/1844 , C11D7/06 , C11D7/08 , C11D7/265 , C11D11/0047 , C23F1/18 , C23G1/103 , H01L21/02074 , H01L21/76826 , H01L21/76849 , H01L21/76877 , H01L21/76883
摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
摘要翻译：公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上沉积

2. 发明授权

US07256111B2 Pretreatment for electroless deposition 有权
标题翻译：化学沉积预处理
公开(公告)号：US07256111B2
公开(公告)日：2007-08-14
申请号：US10934850
申请日：2004-09-03
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/02074 , H01L21/288 , H01L21/67161 , H01L21/6723 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
摘要翻译：本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供气体，例如惰性气体，氢气，其它还原气体，氮气，其它非反应性气体及其组合。在另一个实施例中，等离子体室中的退火包括等离子体等离子体等离子体退火，例如来自氩气，氦气，氢气及其组合的等离子体。

3. 发明申请

US20060174912A1 Wafer cleaning solution for cobalt electroless application 有权
标题翻译：用于钴无电镀的晶圆清洗液
公开(公告)号：US20060174912A1
公开(公告)日：2006-08-10
申请号：US11053501
申请日：2005-02-08
申请人： Ramin Emami , Timothy Weidman , Sergey Lopatin , Hongbin Fang , Arulkumar Shanmugasundram
发明人： Ramin Emami , Timothy Weidman , Sergey Lopatin , Hongbin Fang , Arulkumar Shanmugasundram
IPC分类号： B08B6/00 , H01L21/4763 , C25F1/00
CPC分类号： C23C18/1844 , C11D7/06 , C11D7/08 , C11D7/265 , C11D11/0047 , C23F1/18 , C23G1/103 , H01L21/02074 , H01L21/76826 , H01L21/76849 , H01L21/76877 , H01L21/76883
摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
摘要翻译：公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上沉积

4. 发明申请

US20050164497A1 Pretreatment for electroless deposition 有权
标题翻译：化学沉积预处理
公开(公告)号：US20050164497A1
公开(公告)日：2005-07-28
申请号：US10934850
申请日：2004-09-03
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
IPC分类号： H01L21/00 , H01L21/02 , H01L21/288 , H01L21/44 , H01L21/768
CPC分类号： H01L21/02074 , H01L21/288 , H01L21/67161 , H01L21/6723 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber comprises heating the substrate in a vacuum environment while providing a gas, such as a noble gas, a reducing gas such as hydrogen gas, a non-reducing gas such as nitrogen gas, or combinations thereof. In another embodiment, annealing in a plasma chamber comprises annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, or combinations thereof.
摘要翻译：本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供诸如惰性气体的气体，诸如氢气的还原气体，诸如氮气的非还原性气体，或其组合。在另一个实施例中，等离子体室中的退火包括在诸如来自氩气，氦气，氢气或其组合的等离子体的等离子体中退火衬底。

5. 发明申请

US20050161338A1 Electroless cobalt alloy deposition process 审中-公开
标题翻译：无电钴合金沉积工艺
公开(公告)号：US20050161338A1
公开(公告)日：2005-07-28
申请号：US10970839
申请日：2004-10-21
申请人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram
IPC分类号： C23C18/18 , C23C18/34 , C23C18/50 , C25D5/10 , H01L21/288 , H01L21/768
CPC分类号： H01L21/288 , C23C18/1844 , C23C18/34 , C23C18/50 , H01L21/76849 , H01L21/76874
摘要： In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.
摘要翻译：在一个实施例中，提供了一种用于在金属层上沉积含钴覆盖层的方法，其包括用去离子水润湿步骤冲洗金属层，通过将金属层暴露于无电激活包含钯前体和酸的溶液，并通过将钯层暴露于包含钴源，钨源，除氧剂和表面活性剂的无电镀钴溶液中，将钯覆盖层沉积在钯层上。可以使用抗坏血酸作为除氧剂。在另一个实施方案中，提供了化学镀溶液的组合物，其包含浓度在约50mM至约250mM范围内的钴源，浓度范围为约10mM至约100mM的钨源浓度范围为约10mM至约200mM的络合剂，至少一种浓度为约1mM至约100mM的还原剂，浓度为约1mg的表面活性剂 L至约100mg / L，抗坏血酸浓度为约30mg / L至约300mg / L。

6. 发明申请

US20050170650A1 Electroless palladium nitrate activation prior to cobalt-alloy deposition 审中-公开
标题翻译：在钴合金沉积之前的无电解硝酸钯活化
公开(公告)号：US20050170650A1
公开(公告)日：2005-08-04
申请号：US10970354
申请日：2004-10-21
申请人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram , Fang Mei
发明人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram , Fang Mei
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C23C18/1893 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.
摘要翻译：在一个实施方案中，提供了在沉积含钴覆盖层之前激活金属层的方法，其包括将金属层暴露于无电解活化溶液以在钯金属层上沉积钯层并沉积含钴覆盖层在钯层上。无电解激活溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的硝酸和水。在另一个实施方案中，无电解活化溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的甲磺酸和水。

7. 发明授权

US06708701B2 Capillary ring 失效
标题翻译：毛细管环
公开(公告)号：US06708701B2
公开(公告)日：2004-03-23
申请号：US09981589
申请日：2001-10-16
申请人： Ramin Emami
发明人： Ramin Emami
IPC分类号： B08B304
CPC分类号： H01L21/68721 , B08B3/02 , B08B3/04 , B08B7/00 , H01L21/6708 , H01L21/68728 , H01L21/68735 , H01L21/68785 , Y10S134/902
摘要： The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.
摘要翻译：本发明提供一种用于从基底去除边缘珠的装置。该装置包括基板支撑构件，沿着基板支撑构件的周边定位的多个安装柱以及安装到多个安装柱的刚性环形毛细管环。刚性环形毛细管环包括基本上平面的上毛细管表面，并且构造成在附接到安装柱时保持基本上平面的毛细管表面。

8. 发明授权

US06857941B2 Multi-phase polishing pad 失效
标题翻译：多相抛光垫
公开(公告)号：US06857941B2
公开(公告)日：2005-02-22
申请号：US10139112
申请日：2002-05-02
申请人： Ramin Emami , Robert Lum , Sourabh Mishra
发明人： Ramin Emami , Robert Lum , Sourabh Mishra
IPC分类号： B24B37/24 , B24D7/14 , B24D13/14 , B24B1/00
CPC分类号： B24B37/24 , B24D7/14
摘要： An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.
摘要翻译：提供了一种用于化学机械抛光系统的制品，方法和设备。在一个方面，提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品，所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分，以及第二抛光部分，具有第二硬度的第二抛光材料，用于抛光衬底的第二部分。制品可以设置在可旋转，静止或直线的压板上，用于处理衬底。在另一方面，提供了一种用于处理基板的方法，包括提供包含设置在可旋转压板上的抛光制品的压板，将抛光组合物输送到抛光制品，以及使抛光制品上的基板接触。

9. 发明授权

US06592439B1 Platen for retaining polishing material 有权
标题翻译：压板用于保留抛光材料
公开(公告)号：US06592439B1
公开(公告)日：2003-07-15
申请号：US09709769
申请日：2000-11-10
申请人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
发明人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
IPC分类号： B24B2900
CPC分类号： B25B11/005 , B24B21/04 , B24B37/16 , H01L21/30625
摘要： Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.
摘要翻译：通常，提供了用于保持抛光材料的方法和装置。在一个实施例中，该装置包括具有顶表面，多个通道和一个或多个真空端口的压板。顶表面适于支撑抛光材料。多个通道形成在顶表面的抛光区域中。真空端口设置在压板中，并且至少一个端口与至少一个通道连通。当向端口施加真空时，通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

10. 发明授权

US07331847B2 Vibration damping in chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US07331847B2
公开(公告)日：2008-02-19
申请号：US11333992
申请日：2006-01-17
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B7/00 , B24B9/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。抛光台包括压板，安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式