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1. 发明申请

US20050189235A1 Multi-phase polishing pad 失效
标题翻译：多相抛光垫
公开(公告)号：US20050189235A1
公开(公告)日：2005-09-01
申请号：US11063653
申请日：2005-02-22
申请人： Ramin Emami , Robert Lum , Sourabh Mishra
发明人： Ramin Emami , Robert Lum , Sourabh Mishra
IPC分类号： B24B37/24 , B24D7/14 , B24D13/14 , B23H5/00
CPC分类号： B24B37/24 , B24D7/14
摘要： An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.
摘要翻译：提供了一种用于化学机械抛光系统的制品，方法和设备。在一个方面，提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品，所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分，以及第二抛光部分，具有第二硬度的第二抛光材料，用于抛光衬底的第二部分。制造商可以设置在可旋转，静止或直线的压板上，用于处理衬底。在另一方面，提供了一种用于处理基板的方法，包括提供包含设置在可旋转压板上的抛光制品的压板，将抛光组合物输送到抛光制品，以及使抛光制品上的基板接触。

2. 发明授权

US06857941B2 Multi-phase polishing pad 失效
标题翻译：多相抛光垫
公开(公告)号：US06857941B2
公开(公告)日：2005-02-22
申请号：US10139112
申请日：2002-05-02
申请人： Ramin Emami , Robert Lum , Sourabh Mishra
发明人： Ramin Emami , Robert Lum , Sourabh Mishra
IPC分类号： B24B37/24 , B24D7/14 , B24D13/14 , B24B1/00
CPC分类号： B24B37/24 , B24D7/14
摘要： An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.
摘要翻译：提供了一种用于化学机械抛光系统的制品，方法和设备。在一个方面，提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品，所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分，以及第二抛光部分，具有第二硬度的第二抛光材料，用于抛光衬底的第二部分。制品可以设置在可旋转，静止或直线的压板上，用于处理衬底。在另一方面，提供了一种用于处理基板的方法，包括提供包含设置在可旋转压板上的抛光制品的压板，将抛光组合物输送到抛光制品，以及使抛光制品上的基板接触。

3. 发明授权

US08133096B2 Multi-phase polishing pad 失效
标题翻译：多相抛光垫
公开(公告)号：US08133096B2
公开(公告)日：2012-03-13
申请号：US11063653
申请日：2005-02-22
申请人： Ramin Emami , Robert Lum , Sourabh Mishra
发明人： Ramin Emami , Robert Lum , Sourabh Mishra
IPC分类号： B24B1/00 , B25B5/00 , B25B29/00 , B24D11/00 , B23H5/00
CPC分类号： B24B37/24 , B24D7/14
摘要： An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacturer may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.
摘要翻译：提供了一种用于化学机械抛光系统的制品，方法和设备。在一个方面，提供了一种用于抛光包括具有抛光表面的抛光制品的基底的制品，所述抛光表面包括具有用于抛光所述基底的第一部分的第一硬度的第一抛光材料的第一抛光部分，以及第二抛光部分，具有第二硬度的第二抛光材料，用于抛光衬底的第二部分。制造商可以设置在可旋转，静止或直线的压板上，用于处理衬底。在另一方面，提供了一种用于处理基板的方法，包括提供包含设置在可旋转压板上的抛光制品的压板，将抛光组合物输送到抛光制品，以及使抛光制品上的基板接触。

4. 发明授权

US07048607B1 System and method for chemical mechanical planarization 失效
标题翻译：化学机械平面化的系统和方法
公开(公告)号：US07048607B1
公开(公告)日：2006-05-23
申请号：US09583512
申请日：2000-05-31
申请人： Li Wu , Sourabh Mishra , Young J. Paik , Satyasrayan Kumaraswamy , Robert Lum , Chiu Chan , David Groechel
发明人： Li Wu , Sourabh Mishra , Young J. Paik , Satyasrayan Kumaraswamy , Robert Lum , Chiu Chan , David Groechel
IPC分类号： B24B7/22 , B24B49/00
CPC分类号： B24B37/042 , B24B37/105
摘要： Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.
摘要翻译：通常，用于处理衬底的方法和装置。在一个实施例中，该方法提供至少第一基底和抛光材料之间的第一相对运动。在至少第二基板和抛光材料之间提供第二相对运动。相对运动方向的变化使用于将抛光材料返回到产生均匀抛光结果的状态的调节程序之间的间隔延长。

5. 发明授权

US07109330B2 Purine inhibitors of cyclin dependent kinase 2 and IκB-α 失效
标题翻译：细胞周期蛋白依赖性激酶2和IkappaB-α的嘌呤抑制剂
公开(公告)号：US07109330B2
公开(公告)日：2006-09-19
申请号：US10794828
申请日：2004-03-03
申请人： Robert Lum , Cheri Lynn Blum , Richard Mackman , Michael Wick , Steven Schow , Jeff Zablocki , Prabha Ibrahim
发明人： Robert Lum , Cheri Lynn Blum , Richard Mackman , Michael Wick , Steven Schow , Jeff Zablocki , Prabha Ibrahim
IPC分类号： C07D473/16 , C07D473/40 , A61K31/53 , A61P35/00 , A61P3/10
CPC分类号： B60R1/00 , C07D473/16 , C07D473/40 , G08G1/163
摘要： Compounds of the following formula are provided: In the Formula (I), R1 is —X—R1′; in which R1′ is optionally substituted lower alkyl, optionally substituted aryl, optionally substituted heteroaryl, or optionally substituted heterocyclyl, and X is —NH—. R2 is lower alkyl optionally substituted with one, two or three groups chosen from hydroxy, lower alkoxy, and halogen. And R3 is —NR4R5; in which R4 is hydrogen and R5 is lower alkyl substituted with amino; or (ii) R4 and R5 are both lower alkyl optionally substituted with one, two or three groups chosen from hydroxy and amino. It is to be understood that R1′ is not cyclohexylmethyl, phenyl, substituted phenyl, benzyl, phenylethyl, or m-hydroxybenzyl. The compounds inhibit CDK-2 activity and are useful for treating disorders characterized by undesirable cell proliferation.
摘要翻译：提供下式的化合物：在式（I）中，R 1是-X-R 1'; 其中R 1'是任选取代的低级烷基，任选取代的芳基，任选取代的杂芳基或任选取代的杂环基，X是-NH-。 R 2是任选被一个，两个或三个选自羟基，低级烷氧基和卤素的基团取代的低级烷基。并且R 3是-NR 4 R 5; 其中R 4是氢，R 5是被氨基取代的低级烷基; 或（ii）R 4和R 5均为任选被一个，两个或三个选自羟基和氨基的基团取代的低级烷基。应当理解，R 1不是环己基甲基，苯基，取代的苯基，苄基，苯乙基或间羟基苄基。该化合物抑制CDK-2活性，并且可用于治疗以不期望的细胞增殖为特征的疾病。

6. 发明授权

US5338398A Tungsten silicide etch process selective to photoresist and oxide 失效
标题翻译：硅化钨蚀刻工艺对光致抗蚀剂和氧化物有选择性
公开(公告)号：US5338398A
公开(公告)日：1994-08-16
申请号：US996379
申请日：1992-12-23
申请人： Chester A. Szwejkowski , Robert Lum , Thierry Fried
发明人： Chester A. Szwejkowski , Robert Lum , Thierry Fried
IPC分类号： H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137
摘要： A process for etching tungsten silicide on a semiconductor wafer in a vacuum etch chamber in the presence of a plasma is described using chlorine (Cl.sub.2) and oxygen-bearing etchant gases in a ratio of not more that 20 volume % oxygen-bearing etchant gas, and preferably from about 6 to about 10 volume % oxygen-bearing etchant gas. The process is also capable of etching polysilicon and exhibits a high selectivity for both photoresist and oxide.
摘要翻译：在存在等离子体的情况下，在真空蚀刻室中在半导体晶片上蚀刻硅化钨的工艺描述为使用氯（Cl 2）和含氧蚀刻剂气体，其比例不超过20体积％含氧蚀刻剂气体，并且优选约6至约10体积％的含氧蚀刻剂气体。该方法还能够蚀刻多晶硅并且对光致抗蚀剂和氧化物表现出高选择性。

7. 发明申请

US20090278081A1 PAD PROPERTIES USING NANOPARTICLE ADDITIVES 审中-公开
标题翻译：使用纳米添加剂的贴片性能
公开(公告)号：US20090278081A1
公开(公告)日：2009-11-12
申请号：US12411261
申请日：2009-03-25
申请人： Hichem M'Saad , Lakshmanan Karuppiah , Hung Chih Chen , Jeonghoon Oh , Robert Lum , Stan D. Tsai , Cassio Conceicao , Ashish Bhatnagar , Michael Perry , Kadthala Narendrnath , Yosi Shacham-Diamand
发明人： Hichem M'Saad , Lakshmanan Karuppiah , Hung Chih Chen , Jeonghoon Oh , Robert Lum , Stan D. Tsai , Cassio Conceicao , Ashish Bhatnagar , Michael Perry , Kadthala Narendrnath , Yosi Shacham-Diamand
IPC分类号： C09K13/00
CPC分类号： B24B37/24
摘要： A method for forming a polishing media and an article of manufacture is described. The article of manufacture may be formed into a polishing article. The polishing article includes a polymer base material and a plurality of nano-scale structures disposed in or on the polymer base material.
摘要翻译：描述了用于形成抛光介质和制造物品的方法。制品可以形成为抛光制品。抛光制品包括聚合物基材和设置在聚合物基材中或其上的多个纳米级结构。

8. 发明申请

US20050080261A1 Purine inhibitors of cyclin dependent kinase 2 and IkappaB-alpha 失效
标题翻译：细胞周期蛋白依赖性激酶2和IkappaB-α的嘌呤抑制剂
公开(公告)号：US20050080261A1
公开(公告)日：2005-04-14
申请号：US10794828
申请日：2004-03-03
申请人： Robert Lum , Cheri Blum , Richard Mackman , Michael Wick , Steven Schow , Jeffery Zablocki , Prabha Ibrahim
发明人： Robert Lum , Cheri Blum , Richard Mackman , Michael Wick , Steven Schow , Jeffery Zablocki , Prabha Ibrahim
IPC分类号： B60R1/00 , C07D473/16 , C07D473/40 , G08G1/16 , C07D473/10 , C07D473/14
CPC分类号： B60R1/00 , C07D473/16 , C07D473/40 , G08G1/163
摘要： Compounds of the following formula are provided: In the Formula (I), R1 is —X—R1′; in which R1′ is optionally substituted lower alkyl, optionally substituted aryl, optionally substituted heteroaryl, or optionally substituted heterocyclyl, and X is —NH—. R2 is lower alkyl optionally substituted with one, two or three groups chosen from hydroxy, lower alkoxy, and halogen. And R3 is —NR4R5; in which R4 is hydrogen and R5 is lower alkyl substituted with amino; or (ii) R4 and R5 are both lower alkyl optionally substituted with one, two or three groups chosen from hydroxy and amino. It is to be understood that R1′ is not cyclohexylmethyl, phenyl, substituted phenyl, benzyl, phenylethyl, or m-hydroxybenzyl. The compounds inhibit CDK-2 activity and are useful for treating disorders characterized by undesirable cell proliferation.
摘要翻译：提供下式的化合物：式（I）中，R 1为-X-R 1'; 其中R 1'为任选取代的低级烷基，任选取代的芳基，任选取代的杂芳基或任选取代的杂环基，X为-NH-。 R2是任选被一个，两个或三个选自羟基，低级烷氧基和卤素的基团取代的低级烷基。并且R 3是-NR 4 R 5; 其中R4是氢，R5是被氨基取代的低级烷基; 或（ii）R 4和R 5均为任选被一个，两个或三个选自羟基和氨基的基团取代的低级烷基。应当理解，R1'不是环己基甲基，苯基，取代的苯基，苄基，苯乙基或间羟基苄基。该化合物抑制CDK-2活性，并且可用于治疗以不期望的细胞增殖为特征的疾病。

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