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1. 发明授权

US5940719A Method for forming element isolating film of semiconductor device 失效
公开(公告)号：US5940719A
公开(公告)日：1999-08-17
申请号：US837977
申请日：1997-04-14
申请人： Se Aug Jang , Tae Sik Song , Young Bog Kim , Byung Jin Cho , Jong Choul Kim
发明人： Se Aug Jang , Tae Sik Song , Young Bog Kim , Byung Jin Cho , Jong Choul Kim
IPC分类号： H01L21/316 , H01L21/32 , H01L21/76 , H01L21/762
CPC分类号： H01L21/32 , H01L21/76205 , H01L21/7621 , H01L21/76221
摘要： A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices. The method includes the steps of sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate, over-etching the first nitride film and the pad oxide film by use of an element isolating mask, thereby forming a first hole in the semiconductor substrate, cleaning the entire upper surface of the resulting structure by use of an etch solution, forming second-nitride film spacers on side walls of the selectively etched first nitride film, pad oxide film and first hole, forming a second hole in the first hole of the semiconductor substrate by use of the first nitride film and second-nitride film spacers as a mask, thermally oxidizing the surface of the second hole, thereby forming a thermal oxide film, and removing the first nitride film, pad oxide film and second-nitride film spacers, thereby forming an element isolating film.

2. 发明授权

US6027985A Method for forming element isolating film of semiconductor device 有权
标题翻译：半导体器件元件隔离膜的形成方法
公开(公告)号：US6027985A
公开(公告)日：2000-02-22
申请号：US252675
申请日：1999-02-22
申请人： Se Aug Jang , Tae Sik Song , Young Bog Kim , Byung Jin Cho , Jong Choul Kim
发明人： Se Aug Jang , Tae Sik Song , Young Bog Kim , Byung Jin Cho , Jong Choul Kim
IPC分类号： H01L21/316 , H01L21/32 , H01L21/76 , H01L21/762
CPC分类号： H01L21/32 , H01L21/76205 , H01L21/7621 , H01L21/76221
摘要： A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices. The method includes the steps of sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate, over-etching the first nitride film and the pad oxide film by use of an element isolating mask, thereby forming a first hole in the semiconductor substrate, cleaning the entire upper surface of the resulting structure by use of an etch solution, forming second-nitride film spacers on side walls of the selectively etched first nitride film, pad oxide film and first hole, forming a second hole in the first hole of the semiconductor substrate by use of the first nitride film and second-nitride film spacers as a mask, thermally oxidizing the surface of the second hole, thereby forming a thermal oxide film, and removing the first nitride film, pad oxide film and second-nitride film spacers, thereby forming an element isolating film.
摘要翻译：一种用于形成半导体器件的元件隔离膜的方法，其能够实现拓扑的减小和鸟喙现象的发生的减少，使得可以容易地执行后续处理以制造高度集成的半导体器件。该方法包括以下步骤：在半导体衬底上顺序地形成衬垫氧化膜和第一氮化物膜，通过使用元件隔离掩模对第一氮化物膜和衬垫氧化膜进行过蚀刻，从而在半导体中形成第一孔衬底，通过使用蚀刻溶液清洁所得结构的整个上表面，在选择性蚀刻的第一氮化物膜，衬垫氧化物膜和第一孔的侧壁上形成第二氮化物膜间隔物，在第一孔中形成第二孔通过使用第一氮化物膜和第二氮化物膜间隔物作为掩模，对第二孔的表面进行热氧化，从而形成热氧化膜，并除去第一氮化物膜，衬垫氧化物膜和第二氮化物膜，氮化物膜间隔物，从而形成元件隔离膜。

3. 发明授权

US6013561A Method for forming field oxide film of semiconductor device 失效
标题翻译：半导体器件场氧化膜形成方法
公开(公告)号：US6013561A
公开(公告)日：2000-01-11
申请号：US961132
申请日：1997-10-30
申请人： Se Aug Jang , Byung Jin Cho , Jong Choul Kim
发明人： Se Aug Jang , Byung Jin Cho , Jong Choul Kim
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76205
摘要： A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.
摘要翻译：一种用于形成高度集成的半导体器件的场氧化物膜的方法，其中在用于生长适于隔离半导体器件的元件的场氧化膜的场氧化膜形成步骤期间执行退火步骤。通过退火步骤，可以防止在其上形成场氧化膜的半导体衬底中发生应力集中现象，从而减少或消除场氧化物稀化现象。

4. 发明授权

US5985738A Method for forming field oxide of semiconductor device using wet and dry oxidation 失效
标题翻译：使用湿式和干式氧化形成半导体器件的场氧化物的方法
公开(公告)号：US5985738A
公开(公告)日：1999-11-16
申请号：US959205
申请日：1997-10-28
申请人： Se Aug Jang , Young Bog Kim , Moon Sig Joo , Byung Jin Cho , Jong Choul Kim
发明人： Se Aug Jang , Young Bog Kim , Moon Sig Joo , Byung Jin Cho , Jong Choul Kim
IPC分类号： H01L21/316 , H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76202
摘要： A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.
摘要翻译：公开了一种用于形成半导体器件的场氧化物的方法，其在场氧化的早期利用湿氧化，以防止在场氧化的后期阶段的场氧化物的不生长和干氧化以使场的斜率氧化物阳性，从而提高半导体器件的产量和可靠性。

5. 发明授权

US6107144A Method for forming field oxide of semiconductor device and the semiconductor device 失效
标题翻译：用于形成半导体器件的场氧化物的方法和半导体器件
公开(公告)号：US6107144A
公开(公告)日：2000-08-22
申请号：US70911
申请日：1998-05-04
申请人： Se Aug Jang , Young Bog Kim , In Seok Yeo , Jong Choul Kim
发明人： Se Aug Jang , Young Bog Kim , In Seok Yeo , Jong Choul Kim
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762 , H01L21/336
CPC分类号： H01L21/76202
摘要： A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050-1,200.degree. C. to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.
摘要翻译：一种用于形成半导体器件的场氧化物和半导体器件的方法。为了形成场氧化物，首先，在半导体衬底上构造元件隔离掩模。然后，在掩模的侧壁上形成氮化物间隔物。此时，在场区域产生含氮聚合物。半导体衬底的暴露区域在1050〜1200℃的温度下被氧化，生长凹陷氧化物，同时将含氮聚合物转化为氮化物。此后，与氮化物一起去除凹陷氧化物，以产生通过热氧化形成场氧化物的沟槽。因此，该方法可以防止场氧化物生长时的FOU现象，提高场氧化物稀化效果，从而显着提高半导体器件的制造成品率和可靠性。

6. 发明授权

US06420241B2 Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process 失效
标题翻译：用于在半导体器件中形成隔离区域的方法以及使用两步氧化工艺得到的结构
公开(公告)号：US06420241B2
公开(公告)日：2002-07-16
申请号：US09062291
申请日：1998-04-17
申请人： Se Aug Jang , Young Bog Kim , In Seok Yeo , Jong Choul Kim
发明人： Se Aug Jang , Young Bog Kim , In Seok Yeo , Jong Choul Kim
IPC分类号： H01L2176
CPC分类号： H01L21/76221
摘要： A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermined depth while giving a pad insulator pattern. After an insulator spacer is formed at the side wall of the pad insulator pattern, the exposed region of the semiconductor substrate is thermally oxidized to grow an oxide which is, then, removed to form a recess. An element isolation film is formed in the recess by break-through field oxidation and high temperature field oxidation. The element isolation film thus obtained can prevent the field oxide “ungrowth” phenomenon and at the same time mitigate the field oxide thinning effect as well as improve the properties of the gate oxide.
摘要翻译：一种用于形成半导体器件的元件隔离膜和半导体器件的方法。衬垫绝缘体构造在半导体衬底上。执行过蚀刻处理以将半导体衬底凹入预定深度，同时给出衬垫绝缘体图案。在衬垫绝缘体图案的侧壁上形成绝缘体间隔物之后，半导体衬底的暴露区域被热氧化以生长氧化物，然后被去除以形成凹部。元件隔离膜通过穿透场氧化和高温场氧化在凹陷中形成。由此获得的元件隔离膜可以防止场氧化物“不生长”现象，同时减轻场氧化物稀化效应以及改善栅极氧化物的性质。

7. 发明授权

US6153481A Method for forming an isolation insulating film for internal elements of a semiconductor device 失效
标题翻译：用于形成用于半导体器件的内部元件的隔离绝缘膜的方法
公开(公告)号：US6153481A
公开(公告)日：2000-11-28
申请号：US71163
申请日：1998-05-04
申请人： Se Aug Jang , Byung Jin Cho , Chan Lim
发明人： Se Aug Jang , Byung Jin Cho , Chan Lim
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762 , H01L21/336
CPC分类号： H01L21/76202
摘要： There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.
摘要翻译：提供了一种用于通过使用PBL方法来减少鸟嘴并增加有效活性区域的长度来形成半导体器件的元件隔离绝缘膜的方法。该方法包括以下步骤：依次在半导体衬底上形成衬垫氧化膜，叠层硅膜和氮化膜; 通过使用元件隔离掩模通过蚀刻工艺选择性地图案化氮化物膜来形成元件隔离区域; 以及通过在所述半导体衬底上对所述元件隔离区进行场氧化来形成元件隔离膜。

8. 发明授权

US07804129B2 Recessed gate electrode MOS transistor and method for fabricating the same 有权
标题翻译：嵌入式栅电极MOS晶体管及其制造方法
公开(公告)号：US07804129B2
公开(公告)日：2010-09-28
申请号：US11157999
申请日：2005-06-21
申请人： Jun Ki Kim , Soo Hyun Kim , Hyun Chul Sohn , Se Aug Jang
发明人： Jun Ki Kim , Soo Hyun Kim , Hyun Chul Sohn , Se Aug Jang
IPC分类号： H01L29/76 , H01L21/3205
CPC分类号： H01L29/66795 , H01L27/10876 , H01L27/10879 , H01L29/7853
摘要： Disclosed are a transistor and a method for fabricating the same capable of increasing a threshold voltage and a driving current of the transistor. The method includes the steps of forming a first etch mask on a silicon substrate, forming a trench by etching the exposed isolation area, forming a first insulation layer in the trench and the first etch mask, forming a second insulation layer on the first insulation layer, removing the second insulation layer and the first insulation layer until the first etch mask is exposed, forming a trench type isolation layer on the isolation area, forming a second etch mask on an entire surface of the silicon substrate, etching the exposed channel area, performing an etching process with respect to a resultant substrate structure, and forming a gate in the recess.
摘要翻译：公开了一种晶体管及其制造方法，其能够增加晶体管的阈值电压和驱动电流。该方法包括以下步骤：在硅衬底上形成第一蚀刻掩模，通过蚀刻暴露的隔离区域形成沟槽，在沟槽中形成第一绝缘层和第一蚀刻掩模，在第一绝缘层上形成第二绝缘层去除所述第二绝缘层和所述第一绝缘层直到所述第一蚀刻掩模被暴露，在所述隔离区域上形成沟槽型隔离层，在所述硅衬底的整个表面上形成第二蚀刻掩模，蚀刻所述暴露的沟道区域，对所得基板结构进行蚀刻处理，以及在所述凹部中形成栅极。

9. 发明授权

US07601583B2 Transistor structure of memory device and method for fabricating the same 有权
标题翻译：存储器件的晶体管结构及其制造方法
公开(公告)号：US07601583B2
公开(公告)日：2009-10-13
申请号：US11962100
申请日：2007-12-21
申请人： Se Aug Jang , Yong Soo Kim , Jae Geun Oh , Jae Sung Rohh , Hyun Chul Sohn
发明人： Se Aug Jang , Yong Soo Kim , Jae Geun Oh , Jae Sung Rohh , Hyun Chul Sohn
IPC分类号： H01L29/72
CPC分类号： H01L27/10876 , H01L27/10823 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/66621 , H01L29/66795 , H01L29/7851
摘要： A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.
摘要翻译：存储器件包括从半导体衬底突出的有源区。在活动区域中形成凹部。在半导体衬底上形成场氧化物层。栅极电极延伸穿过有源区域同时与凹部重叠。栅极绝缘层介于栅电极和有源区之间。源极和漏极区域形成在有源区域中。如果上述晶体管结构沿着源极 - 漏极线分段而限定了凹陷的晶体管结构，并且如果沿着栅极线分段则限定了Fin晶体管结构。晶体管结构确保足够的数据保持时间，并且在降低阈值电压的反偏压依赖性的同时提高电流驱动能力。

10. 发明授权

US06537901B2 Method of manufacturing a transistor in a semiconductor device 失效
公开(公告)号：US06537901B2
公开(公告)日：2003-03-25
申请号：US09887511
申请日：2001-06-25
申请人： Tae Ho Cha , Se Aug Jang , Tae Kyun Kim , Dea Gyu Park , In Seok Yeo , Jin Won Park
发明人： Tae Ho Cha , Se Aug Jang , Tae Kyun Kim , Dea Gyu Park , In Seok Yeo , Jin Won Park
IPC分类号： H01L213205
CPC分类号： C23C16/34 , C23C14/0641 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/823828 , H01L29/4958 , H01L29/4966
摘要： There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which the composition(x) of nitrogen is 0.45˜0.55, on a gate insulating film in a NMOS region, so that the work function becomes 4.0˜4.4 eV, and also forms a Ta film or a TaNx film at a high temperature or forms a second TaNx film in which the composition(x) of nitrogen is 0.6˜1.4 is formed, on a gate insulating film in a PMOS region, so that the work function becomes 4.8˜5.2 eV. Thus, the present invention can lower the threshold voltage by implementing a surface channel CMOS device both in the NMOS region and the PMOS region.

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