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1. 发明专利

JP2005239540A Method for producing low stress, large volume crystal with reduced stress birefringence and homogeneous refractive index, and crystal produced by the same 审中-公开
$Method for producing low stress, large volume crystal with reduced stress birefringence and homogeneous refractive index, and crystal produced by the same$
标题翻译：用于生产低应力，具有减少应力双相和均匀折射率的大容量晶体的方法，以及由其生产的晶体
公开(公告)号：JP2005239540A
公开(公告)日：2005-09-08
申请号：JP2005045330
申请日：2005-02-22
申请人： Schott Ag , ショットアーゲーSchott AG
发明人： PARTHIER LUTZ , STAEBLEIN JOERG , WEHRHAN GUNTHER , KUSCH CHRISTIAN
IPC分类号： C30B33/02 , C30B29/12 , C30B33/00 , G02B1/02 , G02B5/30 , G03F7/20
CPC分类号： G02B1/02 , C30B29/12 , C30B33/00 , G02B5/3083 , G03F7/70966
摘要： PROBLEM TO BE SOLVED: To drastically improve the stress birefringence of a crystal, to make the refractive index highly homogeneous over the whole volume of the crystal, and to provide the crystal especially as a crystal used for an optical element.
SOLUTION: The method for producing a low stress, large volume crystal having prescribed dimensions confined in diameter and height, low stress birefringence and a homogeneous refractive index is constituted of (a) a process for growing a crystal having dimensions larger than prescribed dimensions from a melt, (b) a process for cooling the crystal having the large dimensions obtained in the process (a), (c) a process for tempering the crystal having the large dimensions obtained in the process (a), and (d) a process for removing the edge parts of the crystal so that the crystal has the prescribed dimensions confined in diameter and height by cutting each of the diameter and the height of the crystal by at least 5% after cooling in the process (b) and tempering in the process (c). In this method, tempering of the crystal is not performed after removing the edge parts.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了大大提高晶体的应力双折射，使得折射率在整个体积上高度均匀，并且特别提供用作光学元件的晶体的晶体。解决方案：制造具有限定在直径和高度，低应力双折射和均匀折射率的规定尺寸的低应力大体积晶体的方法由（a）用于生长尺寸大于规定的晶体的方法（b）用于冷却在方法（a）中获得的具有大尺寸的晶体的方法，（c）回收方法（a）中得到的具有大尺寸的晶体的方法，和（d ）用于去除晶体的边缘部分的方法，使得晶体具有限定在直径和高度中的规定尺寸，其中在方法（b）中冷却后将晶体的直径和高度切割至少5％，和在过程中回火（c）。在这种方法中，在除去边缘部分之后不进行晶体回火。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005239542A Method for producing low stress non-(111) oriented large volume crystal with reduced stress birefringence and homogenous refractive index, and crystal produced by the same 有权
$Method for producing low stress non-(111) oriented large volume crystal with reduced stress birefringence and homogenous refractive index, and crystal produced by the same$
标题翻译：用于生产低应力非（111）方向的大容量晶体的方法，具有减少的应力双相和均匀折射率，以及由其生产的晶体
公开(公告)号：JP2005239542A
公开(公告)日：2005-09-08
申请号：JP2005047083
申请日：2005-02-23
申请人： Schott Ag , ショットアーゲーSchott AG
发明人： PARTHIER LUTZ , STAEBLEIN JOERG , WEHRHAN GUNTHER , KUSCH CHRISTIAN
IPC分类号： C30B33/02 , C30B29/12 , C30B33/00 , G02B5/30 , G03F7/20
CPC分类号： G03F7/70958 , C30B29/12 , C30B33/00 , G02B5/3083
摘要： PROBLEM TO BE SOLVED: To produce a crystal having an optical component direction different from (111), in particular, (100) or (110) component direction, and optical quality satisfying current requisites in microlithography at 193 nm or wavelengths shorter than 193 nm by performing tempering at a high temperature in an appropriate oven and/or an apparatus suitable for tempering.
SOLUTION: The method for producing the crystal having a sliding surface with reduced stress birefringence and more homogeneous refractive index, especially the non-(111) oriented low stress, large volume crystal is constituted of a process for growing and tempering the crystal while forming a temperature gradient by performing heating and/or cooling for alleviating stress occurring along the sliding surface. In the tempering, the heating and/or cooling is performed by heat propagation toward a direction of heat propagation. The direction of heat propagation or the temperature gradient is directed at an angle of ≥5° with respect to the sliding surface.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了制造具有不同于（111），特别是（100）或（110）分量方向的光学分量方向的晶体，并且在193nm或更短的波长的微光刻中满足当前要求的光学质量在适当的炉子和/或适于回火的设备中通过在高温下进行回火而超过193nm。解决方案：具有应力双折射降低和折射率更均匀的滑动面的晶体的制造方法，特别是非（111）取向的低应力，大体积的晶体由用于生长和回火晶体的方法同时通过进行加热和/或冷却来减轻沿着滑动面发生的应力而形成温度梯度。在回火中，通过向热传播方向的热传播来进行加热和/或冷却。热传播的方向或温度梯度相对于滑动面指向≥5°的角度。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005213141A Method and apparatus for purifying crystal material, method and apparatus for manufacturing crystal from crystal material, and usage of crystal 有权
标题翻译：用于纯化晶体材料的方法和装置，用于从晶体材料制造晶体的方法和装置以及晶体的使用
公开(公告)号：JP2005213141A
公开(公告)日：2005-08-11
申请号：JP2005017804
申请日：2005-01-26
申请人： Schott Ag , ショットアーゲーSchott AG
发明人： KANDLER JOERG , PARTHIER LUTZ , KAUFHOLD THOMAS , WEHRHAN GUNTHER , KUNISCH CLEMENS
IPC分类号： C30B11/02 , C30B11/00 , C30B29/12 , C30B33/00 , G02B1/02
CPC分类号： C30B11/00 , C30B29/12 , C30B33/00 , G02B1/02 , Y10T117/1072 , Y10T117/108
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a big-volumed single crystal suitable for the use as an optical material having a low extrinsic-absorption property. SOLUTION: The method for manufacturing a single crystal, comprising purifying a crystal raw material in a purifying apparatus having a sealable, crystal raw material melting vessel provided with at least one passing-through opening and cooling thereof, is characterized in that this method comprises (a) the process of setting the above opening at a geometrical conductance value of 2.00-30.00 mm 2 and drying the crystal raw material at a temperature of 100-600°C and for at least 20 hours, (b) the process of setting the above opening at a geometrical conductance value of 0.0020-0.300 mm 2 and reacting the impurities contained in the above crystal raw material with at least one kind of a scavenger at the reacting temperature of 600-1,200°C for at least 9 hours, and (c) the process of setting the above opening at a geometrical conductance value of 0.25-1.1 mm 2 , of melting the above crystal raw material to thereby form a melt portion, and then of homogenizing the above melt portion at a homogenizing temperature of higher than 1,400°C for at least 6 hours. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适合用作具有低外在吸收特性的光学材料的大容量单晶的制造方法。解决方案：一种制造单晶的方法，其包括在具有至少一个通过开口和冷却的可密封的晶体原料熔化容器的净化装置中净化晶体原料，其特征在于，方法包括（a）将上述开口设定为2.00-30.00mm 2 的几何电导值的过程，并将该晶体原料在100-600℃的温度下干燥至少20℃ 小时，（b）以0.0020-0.300mm 2的几何电导值设定上述开口的过程，并将上述晶体原料中含有的杂质与至少一种清除剂反应反应温度为600-1200℃至少9小时，（c）将上述开口的几何电导值设定为0.25-1.1mm 2 的方法，将上述晶体从而形成熔体部分，然后均化在高于1400℃的均化温度下熔融部分至少6小时。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2007077013A Method and apparatus for making highly uniform low-stress single crystal by pulling from melt and use of the single crystal 审中-公开
标题翻译：通过从熔体拉伸和使用单晶制造高均匀低应力单晶的方法和装置
公开(公告)号：JP2007077013A
公开(公告)日：2007-03-29
申请号：JP2006246440
申请日：2006-09-12
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： WEHRHAN GUNTHER , PARTHIER LUTZ , RYTZ DANIEL , DUPRE KLAUS , ACKERMANN LOTHAR
IPC分类号： C30B15/26 , C30B29/28
CPC分类号： C30B15/14 , C30B29/22 , C30B29/28 , Y10T117/1004
摘要： PROBLEM TO BE SOLVED: To provide a single crystal, especially a high melting oxide crystal, which does not have growth strips, especially the growth strips with a fishtail pattern, or which does not have the growth strips to a troublesome extent. SOLUTION: This method for making a highly uniform low-stress single crystal in a predetermined orientation comprises (a) dipping a single crystal, kept at a temperature equal to or below the melting point of a crystal raw material, in a melt so as to form a solid-liquid phase boundary surface, (b) pulling the single crystal, dipped in the melt in the process (a), out of the melt vertically relative to the melt surface in order to grow the single crystal in the predetermined crystal orientation, (c) removing heat away while pulling the single crystal out of the melt in the process (b), (d) rotating the single crystal and the melt relative to each other with a controllable rotation speed in the process (b), (e) detecting at least one characteristic surface temperature in an interior of a crucible, and (f) when fluctuations in the at least one characteristic surface temperature are detected, controlling the at least one characteristic surface temperature by increasing or decreasing the rotation speed in order to adjust the phase boundary surface between the single crystal and the melt so that it is planar. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供不具有生长条的单晶，特别是高熔点氧化物晶体，特别是具有鱼尾纹图案的生长条或不具有麻烦程度的生长条的单晶。解决方案：用于制造具有预定取向的高度均匀的低应力单晶的方法包括（a）将保持在等于或低于晶体原料的熔点的温度的单晶浸入熔体中以形成固 - 液相界面，（b）将在（a）工序中浸入熔体中的单晶拉出相对于熔体表面垂直的熔体，以使单晶在预定的晶体取向，（c）在工艺（b）中将单晶从熔体中拉出时除去热量，（d）在该工艺（b）中以可控的转速旋转单晶和熔体相对于彼此），（e）检测坩埚内部的至少一个特征表面温度，以及（f）当检测到所述至少一个特征表面温度的波动时，通过增加或减少所述至少一个特征表面温度来控制所述至少一个特征表面温度旋转速度以调节单晶和熔体之间的相界面，使其为平面的。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007091583A CaF2 SINGLE CRYSTAL HAVING INCREASED LASER RESISTANCE, AND ITS PRODUCTION METHOD AND APPLICATION 审中-公开
标题翻译： CaF2单晶具有提高的耐光性及其生产方法和应用
公开(公告)号：JP2007091583A
公开(公告)日：2007-04-12
申请号：JP2006252110
申请日：2006-09-19
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： GOENNA GORDON VON DER , PARTHIER LUTZ , WEHRHAN GUNTHER , LETZ MARTIN
IPC分类号： C30B29/12 , G02B1/02 , G03F7/20 , H01L21/027
CPC分类号： G02B1/02 , C30B11/00 , C30B29/12 , G03F7/70958 , H01S3/034 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To provide a CaF 2 material which exhibits high radiation resistance even after it is used as a laser material for a long period of time or it is used under high energy or laser pulses with high energy density. SOLUTION: A method for producing a CaF 2 single crystal with increased radiation resistance comprises growing a crystal under controlled conditions of solidification from a melt of a crystal raw material containing a dopant. The melt of CaF 2 contains, as the dopant, Al and/or Ga and/or In and/or Tl ion. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使在长时间用作激光材料之后也具有高耐辐射性的CaF 2 SBB材料，或者在高能量或激光下使用具有高能量密度的脉冲。解决方案：具有增加的耐辐射性的用于生产CaF 2 SBB单晶的方法包括在受控的固化条件下从含有掺杂剂的晶体原料的熔体中生长晶体。 CaF 2 的熔体含有Al和/或Ga和/或In和/或Tl离子作为掺杂剂。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006251805A Manufacturing method of optical element for microlithography, lens system obtained by the method and using method of the lens system 审中-公开
标题翻译：用于微结构的光学元件的制造方法，由该方法获得的透镜系统和使用透镜系统的方法
公开(公告)号：JP2006251805A
公开(公告)日：2006-09-21
申请号：JP2006062651
申请日：2006-03-08
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： WEHRHAN GUNTHER , MARTIN REGINA , PARTHIER LUTZ , STAEBLEIN JOERG , LETZ MARTIN , ALKEMPER JOCHEN , KNAPP KONRAD , PETERMANN KLAUS DR
IPC分类号： G02B1/02 , C30B29/28 , H01L21/027
CPC分类号： C30B29/28 , C30B15/00 , G02B1/02 , G02B13/143 , G03F7/70341 , G03F7/70958
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of optical element for microlithography in which an optical element used for ultraviolet irradiation especially for microlithography is made from cubic granatite, cubic spinel, cubic perovskite, cubic M(II)-oxide and/or M(IV)-oxide.
SOLUTION: The optical element is made from suitable crystals selected from Y
3 Al
5 O
12 , Lu
3 Al
5 O
12 , Ca
3 Al
2 Si
3 O
12 , K
2 NaAlF
6 , K
2 NaScF
6 , K
2 LiAlF
6 , Na
3 Al
2 Li
3 F
12 , (Mg, Zn)Al
2 O
4 , CaAl
2 O
4 , CaB
2 O
4 , LiAl
5 O
8 , BaZrO
3 and/or CaCeO
3 . A front lens used in immersion optics for microlithography at a wavelength of 200 nm or less is an example of a preferred optical element according to the present invention.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于微光刻的光学元件的制造方法，其中特别用于微光刻的用于紫外线照射的光学元件由立方晶系青粉，立方尖晶石，立方体钙钛矿，立方晶M（II）氧化物和 /或M（IV） - 氧化物。解决方案：光学元件由合适的晶体制成，选自Y SB 3，SB 3，SB 3， SB> Al 5 12 3 3 SB> 12 ，K 2，NaAlF SB 6，K SB 2，NaScF SB 6， 2 LiAlF 6 ，Na 3 2 >，（Mg，Zn）Al 2 4 ，CaAl 2 4 0 4 5，SBZO 3，SBZ 3，SB 3，SB 3，。在200nm或更小的波长下用于微光刻的浸没光学元件中的前透镜是根据本发明的优选光学元件的示例。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

DE102009043003A1 Herstellung von Seltenerd-Aluminium- oder -Gallium-Granat-Kristallen aus einer fluoridhaltigen Schmelze sowie ihre Verwendung als optisches Element für die Mirolithographie sowie als Szintillator 未知
公开(公告)号：DE102009043003A1
公开(公告)日：2011-04-07
申请号：DE102009043003
申请日：2009-09-25
申请人： SCHOTT AG
发明人： PARTHIER LUTZ , AICHELE TILO , WEHRHAN GUNTHER , SEITZ CHRISTOPH , SALDERN JOHANN-CHRISTOPH VON
IPC分类号： C30B29/28 , C30B11/00 , C30B15/00
摘要： Es wird ein Verfahren zur Züchtung eines Seltenerdaluminiumgranatkristalls oder Seltenerdgalliumgranatkristalls aus einer Schmelze beschrieben, die erhalten wird durch Schmelzen von Aluminiumgranat wenigstens eines Seltenerdelements, vorzugsweise Lu oder Y, oder ein Gemisch von Oxiden der Formel MeO, wobei Me das Seltenerdelement bzw. die Seltenerdelemente und Aluminium darstellt, wobei die Schmelze weiterhin Fluorid mit Aluminium und/oder dem Seltenerdelement bzw. den Seltenerdelementen als Gegenionen enthält, dadurch gekennzeichnet, dass die Aluminium- und Seltenerdbestandteile derart in der Schmelze eingebracht sind, dass die Mengen an Aluminium/Gallium [AG] und Seltenerdelementen einer Stöchiometrie der folgenden Summenformel entsprechen: SEAGOF, wobei 0 ≦̸ x ≦̸ 0,2 und 0 ≦̸ y ≦̸ 0,2 ist und 0

8. 发明专利

DE10142652B4 未知
公开(公告)号：DE10142652B4
公开(公告)日：2005-04-21
申请号：DE10142652
申请日：2001-08-31
申请人： SCHOTT AG
发明人： SPEIT BURKHARD , WEHRHAN GUNTHER
IPC分类号： C30B11/00 , C30B29/12 , G02B1/02 , G02B3/00 , G02B5/04 , G02B6/00 , G03F7/20 , G21K1/06

9. 发明专利

DE102005010655A1 Method to produce optical parts for microlithography, associated lens systems and its application uses optical garnets, cubic spinels, cubic perovskites, and cubic M (II) - M (Iv) oxides 未知
公开(公告)号：DE102005010655A1
公开(公告)日：2006-09-14
申请号：DE102005010655
申请日：2005-03-08
申请人： SCHOTT AG
发明人： WEHRHAN GUNTHER , MARTIN REGINA , PARTHIER LUTZ , STAEBLEIN JOERG
IPC分类号： G02B1/02 , C30B29/12 , C30B29/26 , C30B29/28 , G03F7/20
摘要： The method uses cubic garnets, cubic spinels, cubic perovscites and cubic M (II) as well as M (IV) oxides to produce optical parts for ultra-violet radiation. The cubic garnets are Y 3Al 5O 12, LU 3Al 5O 12, Ca 3Al 2Si 3O 12, K 2NaAIF 6, K 2NaScF 6,K 2LiAIF 6and/or Na 3Al 2Li 3F 12. The cubic garnets have the general formula (A 1-xD x) whereby A and D can be the same or different. The cubic spinels are (Mg,Zn)Al 2O 4, CaAl 2O 4, CaB 2O 4and/or LiAl 5O 8. The perovsckites are BaZrO 3and/or CaCeO 3and the cubic II/Vi oxides are MgO and/or (Mg,Zn)O.

10. 发明专利

DE102005010654A1 Production of high-homogeneous, tension-poor and large volume calcium fluoride single crystal e.g. for production of lenses, prisms and optical components for deep ultraviolet photolithography, comprises cooling crystal after its breeding 未知
公开(公告)号：DE102005010654A1
公开(公告)日：2006-09-14
申请号：DE102005010654
申请日：2005-03-08
申请人： SCHOTT AG
发明人： POETSCH CHRISTIAN , WEHRHAN GUNTHER , PARTHIER LUTZ , AXMANN HANS-JOERG , STAEBLEIN JOERG
IPC分类号： C30B29/12 , C30B33/02 , G02B1/02
摘要： The crystal is: melted by breeding at 1300-1050[deg]C with a rate of 10 K/h, cooling at above 1100[deg]C and annealing at below 800[deg]C for 24-240 hours with a rate of 0.3-3 K/h; not warmed after the cooling; cooled after its crystallization; heated during the annealing with a rate of 18-0.01 K/h. The crystal has a raw material, which is bred with oxygen content of =3 ppm and/or transition metals of =1 ppm. The melting, crystal growth, cooling and/or annealing are carried out in presence of tin fluoride, lead fluoride, zinc fluoride and xenon fluoride. An independent claim is included for a calcium fluoride single crystal.

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