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1. 发明专利

JP2007077013A Method and apparatus for making highly uniform low-stress single crystal by pulling from melt and use of the single crystal 审中-公开
标题翻译：通过从熔体拉伸和使用单晶制造高均匀低应力单晶的方法和装置
公开(公告)号：JP2007077013A
公开(公告)日：2007-03-29
申请号：JP2006246440
申请日：2006-09-12
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： WEHRHAN GUNTHER , PARTHIER LUTZ , RYTZ DANIEL , DUPRE KLAUS , ACKERMANN LOTHAR
IPC分类号： C30B15/26 , C30B29/28
CPC分类号： C30B15/14 , C30B29/22 , C30B29/28 , Y10T117/1004
摘要： PROBLEM TO BE SOLVED: To provide a single crystal, especially a high melting oxide crystal, which does not have growth strips, especially the growth strips with a fishtail pattern, or which does not have the growth strips to a troublesome extent. SOLUTION: This method for making a highly uniform low-stress single crystal in a predetermined orientation comprises (a) dipping a single crystal, kept at a temperature equal to or below the melting point of a crystal raw material, in a melt so as to form a solid-liquid phase boundary surface, (b) pulling the single crystal, dipped in the melt in the process (a), out of the melt vertically relative to the melt surface in order to grow the single crystal in the predetermined crystal orientation, (c) removing heat away while pulling the single crystal out of the melt in the process (b), (d) rotating the single crystal and the melt relative to each other with a controllable rotation speed in the process (b), (e) detecting at least one characteristic surface temperature in an interior of a crucible, and (f) when fluctuations in the at least one characteristic surface temperature are detected, controlling the at least one characteristic surface temperature by increasing or decreasing the rotation speed in order to adjust the phase boundary surface between the single crystal and the melt so that it is planar. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供不具有生长条的单晶，特别是高熔点氧化物晶体，特别是具有鱼尾纹图案的生长条或不具有麻烦程度的生长条的单晶。解决方案：用于制造具有预定取向的高度均匀的低应力单晶的方法包括（a）将保持在等于或低于晶体原料的熔点的温度的单晶浸入熔体中以形成固 - 液相界面，（b）将在（a）工序中浸入熔体中的单晶拉出相对于熔体表面垂直的熔体，以使单晶在预定的晶体取向，（c）在工艺（b）中将单晶从熔体中拉出时除去热量，（d）在该工艺（b）中以可控的转速旋转单晶和熔体相对于彼此），（e）检测坩埚内部的至少一个特征表面温度，以及（f）当检测到所述至少一个特征表面温度的波动时，通过增加或减少所述至少一个特征表面温度来控制所述至少一个特征表面温度旋转速度以调节单晶和熔体之间的相界面，使其为平面的。版权所有（C）2007，JPO＆INPIT

2. 发明专利

DE102005043623A1 未知
公开(公告)号：DE102005043623A1
公开(公告)日：2007-03-15
申请号：DE102005043623
申请日：2005-09-13
申请人： SCHOTT AG
发明人： WEHRHAN GUNTHER , PARTHIER LUTZ , RYTZ DANIEL , DUPRE KLAUS , ACKERMANN LOTHAR
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B15/36 , C30B29/28 , H01L31/18 , H01L33/00
摘要： The production of high-homogeneous stress-free garnet single crystal with crystal orientation, includes immersing single crystal raw material into a melt surface on a temperature below the melting point of the crystal, under the formation of uniform solid-liquid phase phase-boundary surface, and growing the crystal by pulling out of the melt, along the crystal orientation vertical to the melt surface under dissipation of heat. The crystal and/or the melt are rotated with an adjustable rotation speed relative to each other in a crucible interior. The production of high-homogeneous stress-free garnet single crystal with crystal orientation, includes immersing single crystal raw material into a melt surface on a temperature below the melting point of the crystal, under the formation of uniform solid-liquid phase-boundary surface, and growing the crystal by pulling out of the melt, along the crystal orientation vertical to the melt surface under dissipation of heat. The crystal and/or the melt are rotated with an adjustable rotation speed relative to each other in a crucible interior. An even phase boundary surface is adjusted and characteristic surface temperature is detected in the crucible interior by thermal sensors. The characteristic surface temperature is surface temperature of the melt and a cylindrical part of the pulled crystal, and is determined via heat energy radiation. The surface temperature is regulated by increase or degradation of the rotation speed in the occurrence of temperature variation. The given crystal orientation is produced by means of a super-seed crystal, which exhibits a diameter that corresponds to the grown crystal. The immersed crystal and or crystal seed is back-melted before beginning of the crystal growth. The crystal exhibits 0.3-0.8 times diameter of the melt in the crucible. Maximally 40% of the melt mass is used for the crystal growth. After completion of the growth procedure, the remainder melt is removed from the crucible under the decrease of the crystal diameter with subsequent widening under crystalline solidification. The crystal is tempered in a reheating chamber after completion of the growth procedure and removing of the remainder melt. The crucible interior and pre-heater is rinsed with inert gas during the growth process and or during the tempering process. Independent claims are included for: (1) a device for growth of crystals using Czochralski process; and (2) a stress-free single crystal.

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