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1. 发明授权

US06567312B1 Non-volatile semiconductor memory device having a charge storing insulation film and data holding method therefor 失效
标题翻译：具有电荷存储绝缘膜的非易失性半导体存储器件及其数据保持方法
公开(公告)号：US06567312B1
公开(公告)日：2003-05-20
申请号：US09689714
申请日：2000-10-13
申请人： Satoshi Torii , Hideyuki Kojima , Hiroshi Mawatari
发明人： Satoshi Torii , Hideyuki Kojima , Hiroshi Mawatari
IPC分类号： G11C1604
CPC分类号： G11C16/0491 , G11C16/3454
摘要： In a flash memory having, for example, a single-gate type memory cell consisting of the gate electrode provided via a thin charge trap layer on a semiconductor substrate, there is provided a non-volatile semiconductor memory that is characterized in applying a short pulse to the memory cell to partly remove the electrons from the charge trap layer after writing the data to the memory cell. This ensures the write operation reliability of non-volatile semiconductor memory such as single-gate type flash memory or the like without changing the basic structure of the memory cell array.
摘要翻译：在具有例如由通过半导体衬底上的薄电荷陷阱层提供的栅极组成的单栅极型存储单元的闪存中，提供了一种非易失性半导体存储器，其特征在于施加短脉冲在将数据写入到存储单元之后，将其从电荷陷阱层部分去除。这确保了不改变存储单元阵列的基本结构的非易失性半导体存储器诸如单栅极型闪存等的写操作可靠性。

2. 发明授权

US08426267B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08426267B2
公开(公告)日：2013-04-23
申请号：US13010416
申请日：2011-01-20
申请人： Tomohiko Tsutsumi , Taiji Ema , Hideyuki Kojima , Toru Anezaki
发明人： Tomohiko Tsutsumi , Taiji Ema , Hideyuki Kojima , Toru Anezaki
IPC分类号： H01L21/8234 , H01L21/8238
CPC分类号： H01L27/0629 , H01L21/823814 , H01L21/823857 , H01L27/0266 , H01L27/105 , H01L27/11526 , H01L27/11546
摘要： The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.
摘要翻译：半导体器件包括第一MIS晶体管，其包括栅极绝缘膜92，形成在栅极绝缘膜92和源极/漏极区154上的栅电极108，包括比栅极绝缘膜92厚的栅极绝缘膜96的第二MIS晶体管形成在栅极绝缘膜96上的栅极电极108，源极/漏极区域154以及连接到源极/漏极区域154之一的镇流电阻器120，在具有绝缘膜的镇流电阻器120上形成的自对准硅绝缘膜146 92，比其间的栅极绝缘膜96薄，以及形成在源极/漏极区154上的硅化物膜156。

3. 发明授权

US08324678B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08324678B2
公开(公告)日：2012-12-04
申请号：US12911380
申请日：2010-10-25
申请人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
发明人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
IPC分类号： H01L29/788
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11531 , H01L27/11548
摘要： The method of manufacturing a semiconductor device, including a first region where a transistor including a gate electrode of a stacked structure is formed, a second region where a transistor including a gate electrode of a single-layer structure is formed, and a third region positioned in a boundary part between the first region and the second region, includes: depositing a first conductive film, patterning the first conductive film in the first region and the third region so that the outer edge is positioned in the third region, depositing the second conductive film, patterning the second conductive film to form a control gate in the first region while leaving the second conductive film, covering the second region and having the inner edge positioned inner of the outer edge of the first conductive film, and patterning the second conductive film in the second region to form the gate electrode.
摘要翻译：制造半导体器件的方法包括形成包括层叠结构的栅电极的晶体管的第一区域，形成包括单层结构的栅电极的晶体管的第二区域和位于在第一区域和第二区域之间的边界部分中包括：沉积第一导电膜，使第一区域和第三区域中的第一导电膜图形化，使得外边缘位于第三区域中，沉积第二导电膜膜，图案化第二导电膜，以在离开第二导电膜的同时在第一区域中形成控制栅极，覆盖第二区域并且使内边缘位于第一导电膜的外边缘的内侧，并且使第二导电膜在第二区域中形成栅电极。

4. 发明授权

US07977723B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07977723B2
公开(公告)日：2011-07-12
申请号：US12354575
申请日：2009-01-15
申请人： Hiroyuki Ogawa , Jun Lin , Hideyuki Kojima
发明人： Hiroyuki Ogawa , Jun Lin , Hideyuki Kojima
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L21/763 , H01L21/823481 , H01L27/0629 , H01L27/10805 , H01L27/1085
摘要： A semiconductor device includes a semiconductor substrate, an active region formed in the semiconductor substrate and extending in a first direction, the active region including a transistor sub-region and a capacitor sub-region, a first trench extending around the transistor sub-region, an isolation layer disposed in the first trench, a second trench extending around the capacitor sub-region, a first transistor including a first insulating layer disposed on the transistor sub-region, the first transistor including a first conductive layer disposed on the first insulating layer, and a first capacitor including a second insulating layer extending over the capacitor sub-region and a sidewall of the second trench, the first capacitor including a second conductive layer disposed on the second insulating layer, the active region having an end portion in the first direction opposite to the transistor sub-region and extending across the first capacitor.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中并沿第一方向延伸的有源区，包括晶体管子区和电容器子区的有源区，围绕晶体管子区延伸的第一沟槽，设置在所述第一沟槽中的隔离层，围绕所述电容器子区域延伸的第二沟槽，包括设置在所述晶体管子区域上的第一绝缘层的第一晶体管，所述第一晶体管包括设置在所述第一绝缘层上的第一导电层以及包括在所述电容器子区域上延伸的第二绝缘层和所述第二沟槽的侧壁的第一电容器，所述第一电容器包括设置在所述第二绝缘层上的第二导电层，所述有源区域具有在所述第一绝缘层方向与晶体管子区域相反并延伸穿过第一电容器。

5. 发明申请

US20110108925A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110108925A1
公开(公告)日：2011-05-12
申请号：US13010255
申请日：2011-01-20
申请人： Tomohiko TSUTSUMI , Taiji Ema , Hideyuki Kojima , Toru Anezaki
发明人： Tomohiko TSUTSUMI , Taiji Ema , Hideyuki Kojima , Toru Anezaki
IPC分类号： H01L27/092
CPC分类号： H01L27/0629 , H01L21/823814 , H01L21/823857 , H01L27/0266 , H01L27/105 , H01L27/11526 , H01L27/11546
摘要： The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.

6. 发明申请

US20110073950A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110073950A1
公开(公告)日：2011-03-31
申请号：US12965422
申请日：2010-12-10
申请人： Tomohiko Tsutsumi , Taiji Ema , Hideyuki Kojima , Toru Anezaki
发明人： Tomohiko Tsutsumi , Taiji Ema , Hideyuki Kojima , Toru Anezaki
IPC分类号： H01L27/092 , H01L29/78
CPC分类号： H01L27/0629 , H01L21/823814 , H01L21/823857 , H01L27/0266 , H01L27/105 , H01L27/11526 , H01L27/11546
摘要： The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.

7. 发明授权

US07755928B2 Semiconductor memory device and semiconductor device group 有权
标题翻译：半导体存储器件和半导体器件组
公开(公告)号：US07755928B2
公开(公告)日：2010-07-13
申请号：US12320861
申请日：2009-02-06
申请人： Toru Anezaki , Tomohiko Tsutsumi , Tatsuji Araya , Hideyuki Kojima , Taiji Ema
发明人： Toru Anezaki , Tomohiko Tsutsumi , Tatsuji Araya , Hideyuki Kojima , Taiji Ema
IPC分类号： G11C11/00
CPC分类号： H01L27/1104 , G11C5/063 , G11C11/412 , H01L27/11 , Y10S257/903
摘要： A semiconductor device includes a first CMOS inverter, a second CMOS inverter, a first transfer transistor and a second transfer transistor wherein the first and second transfer transistors are formed respectively in first and second device regions defined on a semiconductor device by a device isolation region so as to extend in parallel with each other, the first transfer transistor contacting with a first bit line at a first bit contact region on the first device region, the second transfer transistor contacting with a second bit line at a second bit contact region on the second device region, wherein the first bit contact region is formed in the first device region such that a center of said the bit contact region is offset toward the second device region, and wherein the second bit contact region is formed in the second device region such that a center of the second bit contact region is offset toward the first device region.
摘要翻译：半导体器件包括第一CMOS反相器，第二CMOS反相器，第一传输晶体管和第二传输晶体管，其中第一和第二传输晶体管分别形成在由器件隔离区限定在半导体器件上的第一和第二器件区域中，为了彼此并联延伸，第一传输晶体管在第一器件区域上的第一位接触区域处与第一位线接触，第二传输晶体管在第二位线处与第二位线接触，第二位线在第二位接触区域处器件区域，其中第一位接触区域形成在第一器件区域中，使得所述位接触区域的中心朝向第二器件区域偏移，并且其中第二位接触区域形成在第二器件区域中，使得第二位接触区域的中心朝向第一器件区域偏移。

8. 发明授权

US07557004B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07557004B2
公开(公告)日：2009-07-07
申请号：US11594856
申请日：2006-11-09
申请人： Hiroyuki Ogawa , Hideyuki Kojima
发明人： Hiroyuki Ogawa , Hideyuki Kojima
IPC分类号： H01L21/336
CPC分类号： H01L21/823462 , H01L21/823857 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546
摘要： The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.
摘要翻译：制造半导体器件的方法包括以下步骤：在具有第一至第三区域的半导体衬底10上形成绝缘膜20，导电膜22和绝缘膜24; 去除绝缘膜24，导电膜22和形成在第二区域和第三区域中的绝缘膜20; 在第二区域和第三区域中形成绝缘膜38; 去除第一区域中的绝缘膜24和第三区域中的绝缘膜38; 在第三区域中形成绝缘膜44; 在形成导电膜52之后，在第一区域中图案化导电膜22,52以形成栅电极58; 以及图案化导电膜52以在第二区域和第三区域中形成栅极电极62，同时在栅极电极58上移除导电膜52。

9. 发明授权

US07528908B2 Color filter for liquid crystal display and semitransmission liquid crystal display 有权
标题翻译：彩色滤光片用于液晶显示和半透明液晶显示
公开(公告)号：US07528908B2
公开(公告)日：2009-05-05
申请号：US10500210
申请日：2002-11-27
申请人： Tetsuo Yamashita , Ikumi Takiguchi , Hideyuki Kojima , Hiroyuki Sasaki
发明人： Tetsuo Yamashita , Ikumi Takiguchi , Hideyuki Kojima , Hiroyuki Sasaki
IPC分类号： G02F1/1335
CPC分类号： G02B5/223 , G02F1/133516 , G02F1/133553 , G02F2203/09
摘要： The present invention provides a low-cost transflective liquid crystal display exhibiting high color reproducibility in a transmissive display and excellent characteristics (color reproducibility and brightness) in a reflective display. Also, the present invention provides a color filter for a bright transflective liquid crystal display.The transflective liquid crystal display includes a pair of substrates disposed opposite to each other with a liquid crystal layer held therebetween, a reflection means using ambient light as a light source, and a backlight source. The transflective liquid crystal display further includes a color filter having a transmissive region and a reflective region which are provided in each picture element of the color filter and which have colored layers comprising a single material, and a three-peak type LED backlight source.
摘要翻译：本发明提供了一种在透射显示器中显示出高色彩再现性的低成本透反液晶显示器，并且在反射显示器中具有优异的特性（颜色再现性和亮度）。此外，本发明提供一种用于明亮透反液晶显示器的滤色器。半透射型液晶显示器包括彼此相对布置的一对基板，其中保持有液晶层，使用环境光作为光源的反射装置和背光源。半透射型液晶显示装置还包括具有透光区域和反射区域的滤色器，该滤色片设置在滤色器的每个像素中，并具有包含单一材料的着色层和三峰型LED背光源。

10. 发明申请

US20080090364A1 Semiconductor device and its manufacture method 有权
公开(公告)号：US20080090364A1
公开(公告)日：2008-04-17
申请号：US12000047
申请日：2007-12-07
申请人： Taiji Ema , Hideyuki Kojima , Toru Anezaki
发明人： Taiji Ema , Hideyuki Kojima , Toru Anezaki
IPC分类号： H01L21/336
CPC分类号： H01L21/823412 , H01L21/823456 , H01L21/823493 , H01L21/823807 , H01L21/823857 , H01L21/823878 , H01L21/823892
摘要： Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.

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