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1. 发明授权

US08975182B2 Method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：半导体装置的制造方法以及半导体装置
公开(公告)号：US08975182B2
公开(公告)日：2015-03-10
申请号：US14234476
申请日：2012-07-27
申请人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
发明人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
IPC分类号： H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , B23K35/28 , B23K35/00 , B23K35/02 , C22C18/04 , B23K1/00 , B23K1/008 , B23K1/19 , H01L29/16 , H01L29/20
CPC分类号： H01L29/1602 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/206 , B23K35/007 , B23K35/025 , B23K35/282 , B23K35/286 , B23K2101/34 , B23K2101/40 , B23K2101/42 , C22C18/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/1608 , H01L29/2003 , H01L2224/29118 , H01L2224/32225 , H01L2224/83001 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/15787 , H01L2924/01013 , H01L2924/0103 , H01L2924/00
摘要： A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要翻译：半导体器件的制造方法是通过将半导体元件，至少具有表面的Cu作为主要元素的基板和比半导体元件的形状小的ZnAl焊料芯片进行准位来进行的。将所述半导体元件和所述基板配置为使得各个接合面彼此面对，并将所述ZnAl共晶焊料夹在所述基板和所述半导体元件之间; 在向ZnAl焊料芯片施加负载的同时，增加夹在基板和半导体元件之间的ZnAl焊料芯片的温度，使得ZnAl焊料芯片熔化形成ZnAl焊料层; 并且在向ZnAl焊料层施加负载的同时降低ZnAl焊料层的温度。

2. 发明申请

US20140191250A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：US20140191250A1
公开(公告)日：2014-07-10
申请号：US14234476
申请日：2012-07-27
申请人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
发明人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
IPC分类号： H01L23/00 , H01L29/16 , H01L29/20
CPC分类号： H01L29/1602 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/206 , B23K35/007 , B23K35/025 , B23K35/282 , B23K35/286 , B23K2101/34 , B23K2101/40 , B23K2101/42 , C22C18/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/1608 , H01L29/2003 , H01L2224/29118 , H01L2224/32225 , H01L2224/83001 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/15787 , H01L2924/01013 , H01L2924/0103 , H01L2924/00
摘要： A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要翻译：半导体器件的制造方法是通过将半导体元件，至少具有表面的Cu作为主要元素的基板和比半导体元件的形状小的ZnAl焊料芯片进行准位来进行的。将所述半导体元件和所述基板配置为使得各个接合面彼此面对，并将所述ZnAl共晶焊料夹在所述基板和所述半导体元件之间; 在向ZnAl焊料芯片施加负载的同时，增加夹在基板和半导体元件之间的ZnAl焊料芯片的温度，使得ZnAl焊料芯片熔化形成ZnAl焊料层; 并且在向ZnAl焊料层施加负载的同时降低ZnAl焊料层的温度。

3. 发明授权

US09199339B2 Pb-free solder alloy 有权
标题翻译：无铅焊料合金
公开(公告)号：US09199339B2
公开(公告)日：2015-12-01
申请号：US13805772
申请日：2011-06-15
申请人： Hiroaki Nagata , Takashi Iseki , Jiro Taguchi , Masato Takamori
发明人： Hiroaki Nagata , Takashi Iseki , Jiro Taguchi , Masato Takamori
IPC分类号： B23K35/24 , B23K35/26 , C22C1/02 , C22C1/04 , C22C12/00 , H05K3/34
CPC分类号： B23K35/24 , B23K35/262 , B23K35/264 , C22C1/02 , C22C1/04 , C22C12/00 , H05K3/3463
摘要： Disclosed herein is a high-temperature Pb-free solder alloy having the strength required to join electronic parts to a substrate and having excellence in wettability and workability. The high-temperature Pb-free solder alloy contains 0.4% by mass or more but 13.5% by mass or less of Zn, 0.05% by mass or more but 2.0% by mass or less of Cu, 0.500% by mass or less of P, and a balance being Bi except for inevitable impurities. The Pb-free solder alloy may further contain 0.03% by mass or more but 0.7% by mass or less of Al.
摘要翻译：本发明公开了一种高温无铅焊料合金，其具有将电子部件接合到基板上所需的强度并且具有优异的润湿性和可加工性。高温无铅焊料合金含有0.4质量％以上且13.5质量％以下的Zn，0.05质量％以上且2.0质量％以下的Cu，0.5质量％以下的P ，余量为Bi，除了不可避免的杂质。无铅焊料合金还可以含有0.03质量％以上且0.7质量％以下的Al。

4. 发明申请

US20130094991A1 Pb-FREE SOLDER ALLOY 有权
标题翻译：无铅焊接合金
公开(公告)号：US20130094991A1
公开(公告)日：2013-04-18
申请号：US13805772
申请日：2011-06-15
申请人： Hiroaki Nagata , Takashi Iseki , Jiro Taguchi , Masato Takamori
发明人： Hiroaki Nagata , Takashi Iseki , Jiro Taguchi , Masato Takamori
IPC分类号： B23K35/24
CPC分类号： B23K35/24 , B23K35/262 , B23K35/264 , C22C1/02 , C22C1/04 , C22C12/00 , H05K3/3463
摘要： Disclosed herein is a high-temperature Pb-free solder alloy having the strength required to join electronic parts to a substrate and having excellence in wettability and workability.The high-temperature Pb-free solder alloy contains 0.4% by mass or more but 13.5% by mass or less of Zn, 0.05% by mass or more but 2.0% by mass or less of Cu, 0.500% by mass or less of P, and a balance being Bi except for inevitable impurities. The Pb-free solder alloy may further contain 0.03% by mass or more but 0.7% by mass or less of Al.
摘要翻译：本发明公开了一种高温无铅焊料合金，其具有将电子部件接合到基板上所需的强度并且具有优异的润湿性和可加工性。高温无铅焊料合金含有0.4质量％以上且13.5质量％以下的Zn，0.05质量％以上且2.0质量％以下的Cu，0.5质量％以下的P ，余量为Bi，除了不可避免的杂质。无铅焊料合金还可以含有0.03质量％以上且0.7质量％以下的Al。

5. 发明授权

US08993197B2 Bipolar plate for fuel cell and method for producing the same 有权
标题翻译：燃料电池用双极板及其制造方法
公开(公告)号：US08993197B2
公开(公告)日：2015-03-31
申请号：US13511175
申请日：2010-12-24
申请人： Takashi Iseki , Kazuyuki Nakanishi , Yasuhiro Ozawa , Yuka Yamada , Hajime Hasegawa , Masafumi Koizumi , Katsutoshi Fujisawa , Naoki Ueda , Hirohiko Hisano
发明人： Takashi Iseki , Kazuyuki Nakanishi , Yasuhiro Ozawa , Yuka Yamada , Hajime Hasegawa , Masafumi Koizumi , Katsutoshi Fujisawa , Naoki Ueda , Hirohiko Hisano
IPC分类号： H01M8/02 , C23C16/26 , C01B31/02 , B82Y30/00
CPC分类号： C01B31/02 , B82Y30/00 , C01B32/05 , H01M8/021 , H01M8/0228 , H01M8/0234 , Y02P70/56
摘要： A bipolar plate for a fuel cell comprises a substrate formed of stainless steel; an oriented amorphous carbon film formed at least on a surface of the substrate facing an electrode, and containing C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction; a mixed layer generated in an interface between the substrate and the oriented amorphous carbon film and containing at least one kind of constituent atoms of each of the substrate and the oriented amorphous carbon film; and a plurality of projections protruding from the mixed layer into the oriented amorphous carbon film and having a mean length of 10 to 150 nm.
摘要翻译：用于燃料电池的双极板包括由不锈钢形成的基板; 至少在面向电极的基板的表面上形成并含有C为主要成分的定向非晶碳膜，3至20at。 N的百分比，超过0。％，不超过20。 H的百分比，当C的总量取为100时。％，具有sp2混合轨道（Csp2）的C的量不小于70at。％和小于100。％和（002）面的石墨沿厚度方向取向; 在所述基板和所述取向非晶碳膜之间的界面中产生并且含有所述基板和所述取向非晶碳膜中的至少一种构成原子的混合层; 以及从混合层突出到取向非晶碳膜中并具有10〜150nm的平均长度的多个突起。

6. 发明申请

US20140041760A1 Pb-FREE SOLDER PASTE 有权
标题翻译：无铅焊膏
公开(公告)号：US20140041760A1
公开(公告)日：2014-02-13
申请号：US14003335
申请日：2011-11-18
申请人： Takashi Iseki
发明人： Takashi Iseki
IPC分类号： B23K35/02
CPC分类号： B23K35/025 , B23K35/264 , C22C12/00
摘要： There is provided a high-temperature Pb-free solder paste having the strength required to join electronic parts to a substrate and having excellence in wettability and workability.The solder paste formed by mixing a solder alloy and a flux, the solder alloy consisting of, based on the total mass of the solder alloy as 100 mass %: 0.4 to 13.5 mass % of Zn, at least one of 0.01 to 2.0 mass % of Cu or 0.03 to 0.7 mass % of Al, and a balance being Bi except for inevitable impurities.
摘要翻译：提供了具有将电子部件连接到基板所需的强度并且具有优异的润湿性和可加工性的高温无铅焊膏。通过将焊料合金和助熔剂混合而形成的焊锡膏，焊料合金由焊料合金的总质量为100质量％：Zn为0.4〜13.5质量％，0.01〜2.0质量％的Cu或0.03〜0.7质量％的Al，余量为Bi，除了不可避免的杂质。

7. 发明申请

US20080075846A1 COATING FILM REMOVAL METHOD AND COATED MEMBER REGENERATION METHOD 失效
标题翻译：涂膜去除方法和涂层成员再生方法
公开(公告)号：US20080075846A1
公开(公告)日：2008-03-27
申请号：US11854957
申请日：2007-09-13
申请人： Hideo TACHIKAWA , Ken-ichi Suzuki , Fumio Shimizu , Takashi Iseki
发明人： Hideo TACHIKAWA , Ken-ichi Suzuki , Fumio Shimizu , Takashi Iseki
IPC分类号： B05D3/00 , B08B7/00 , C23G1/00
CPC分类号： C23G1/32 , C23C14/021 , C23C16/0227
摘要： A coating film removal method for a coated member having a coating film formed over the surface of a substrate is disclosed, which can easily achieve a coating film removal, even for a carbon-based coating film containing carbon as a main component, besides a carbon-based coating film containing a metal element etc. A coated member regeneration method is also disclosed, which removes a coating film from a coated member, and then forms a new coating film over the member, to regenerate the coated member. The coating film removal method is adapted to remove a carbon-based coating film from a coated member (10) including a substrate, and the carbon-based coating film coated on at least a portion of a surface of the substrate while containing carbon as a main component. The coating film removal method includes bringing a molten salt having an oxidizing function for carbon into contact with the carbon-based coating film, to remove at least a portion of the carbon-based coating film coated over the surface of the substrate. A coated member regeneration method includes removing the carbon-based coating film from the coated member, using such coating film removal method, and subsequently forming a coating film on at least a portion of a surface of the film-removed member (11).
摘要翻译：公开了一种在基板表面上形成有涂膜的涂布部件的涂膜除去方法，即使对于以碳为主要成分的碳系涂膜也可以容易地进行除去膜，除了碳含有金属元素等的涂膜。还公开了一种涂覆部件再生方法，其从涂覆部件除去涂膜，然后在该部件上形成新的涂膜，以再生涂覆部件。涂膜去除方法适于从包括基材的涂布构件（10）中除去碳基涂膜，并且将涂覆在基材表面的至少一部分上的碳基涂膜同时含有碳作为主要成分。涂膜去除方法包括使具有碳氧化功能的熔融盐与碳基涂膜接触，以除去涂覆在基材表面上的碳基涂膜的至少一部分。涂覆部件再生方法包括使用这种涂膜除去方法从涂覆部件上除去碳基涂膜，并且随后在除膜部件（11）的表面的至少一部分上形成涂膜。

8. 发明授权

US08845828B2 Pb-free solder alloy mainly containing Zn 有权
标题翻译：无铅焊料合金主要含Zn
公开(公告)号：US08845828B2
公开(公告)日：2014-09-30
申请号：US13991502
申请日：2011-10-20
申请人： Takashi Iseki
发明人： Takashi Iseki
IPC分类号： C22C18/00 , C22C18/04 , B23K35/28 , H05K3/34
CPC分类号： B23K35/282 , C22C18/04 , H05K3/3463
摘要： There is provided a high-temperature Zn-based Pb free solder alloy having a melting point of approximately 300 to 400° C. and is excellent in wettability, joinability, workability and reliability.The Pb-free solder alloy mainly containing Zn consists of: 1.0 to 9.0 mass %, preferably 3.0 to 7.0 mass % of Al, 0.002 to 0.800 mass %, preferably 0.005 to 0.500 mass % of P, and a balance being Zn except for inevitable impurities incorporated during a manufacturing stage. The Pb-free solder alloy may include at least one of 0.3 to 4.0 mass % of Mg or 0.3 to 3.0 mass % of Ge.
摘要翻译：提供熔点约为300-400℃的高温Zn系无铅焊料合金，并且润湿性，接合性，可加工性和可靠性优异。主要含有Zn的无铅焊料合金由以下组成：1.0〜9.0质量％，优选3.0〜7.0质量％的Al，0.002〜0.800质量％，优选0.005〜0.500质量％的P，余量为Zn，不可避免在制造阶段掺杂的杂质。无铅焊料合金可以包含0.3〜4.0质量％的Mg或0.3〜3.0质量％的Ge中的至少一种。

9. 发明授权

US08652587B2 Method and apparatus for forming film 有权
标题翻译：薄膜成膜方法及装置
公开(公告)号：US08652587B2
公开(公告)日：2014-02-18
申请号：US13046208
申请日：2011-03-11
申请人： Kazuyuki Nakanishi , Takashi Iseki , Yasuhiro Ozawa , Yuka Yamada , Seiji Mizuno , Katsumi Sato , Masafumi Koizumi , Yoshiyuki Funaki , Kyouji Kondo , Takayuki Kikuchi
发明人： Kazuyuki Nakanishi , Takashi Iseki , Yasuhiro Ozawa , Yuka Yamada , Seiji Mizuno , Katsumi Sato , Masafumi Koizumi , Yoshiyuki Funaki , Kyouji Kondo , Takayuki Kikuchi
IPC分类号： H05H1/24
CPC分类号： C23C16/26 , C23C16/503 , C23C16/545
摘要： This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.
摘要翻译：本发明采用等离子体增强化学气相沉积法，该装置包括一个室，一对旋转电极卷轴，包括一个送出卷轴和一个卷取卷轴，等离子体源，原料气体供应器和排气单元，以及包括在从所述送出卷轴送出导电性基板并卷绕在所述卷取卷轴上时，施加从所述等离子体源施加到所述旋转电极卷轴上的负电压，使得所述基板部分在卷盘接触之间的整个表面材料气体，由此在卷轴之间沿着基板部分的表面形成等离子体护套，并且材料气体在等离子体护套中被激活，并且因此接触基板的表面，从而在基板的表面上形成膜。

10. 发明授权

US07833626B2 Amorphous carbon film, process for forming the same, and high wear-resistant sliding member with amorphous carbon film provided 有权
标题翻译：非晶碳膜，其形成方法和具有非晶碳膜的高耐磨滑动构件
公开(公告)号：US07833626B2
公开(公告)日：2010-11-16
申请号：US11720154
申请日：2005-11-24
申请人： Takashi Iseki , Hideo Tachikawa , Hiroyuki Mori , Kazuyuki Nakanishi , Munehisa Matsui , Shintaro Igarashi , Fumio Shimizu , Yoshinari Tsuchiya , Tadashi Oshima
发明人： Takashi Iseki , Hideo Tachikawa , Hiroyuki Mori , Kazuyuki Nakanishi , Munehisa Matsui , Shintaro Igarashi , Fumio Shimizu , Yoshinari Tsuchiya , Tadashi Oshima
IPC分类号： B32B9/00 , H05H1/24
CPC分类号： C23C16/26 , Y10T428/30
摘要： An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.
摘要翻译：当非晶碳膜的整体为100原子％时，无定形碳膜以碳为主成分，硅为0.1原子％以上且10原子％以下。当全部碳量为100原子％时，碳由具有60原子％以上至90原子％以下的量的sp2混合轨道的碳构成。还公开了一种制备无定形碳膜的方法。

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