专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080113300A2 Coating Compositions for Use in Forming Patterns and Methods of Forming Patterns 审中-公开
标题翻译：用于形成图案的涂料组合物和形成图案的方法
公开(公告)号：US20080113300A2
公开(公告)日：2008-05-15
申请号：US11397882
申请日：2006-04-05
申请人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
发明人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.
摘要翻译：用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。聚合物可以具有被乙烯基醚官能团取代的芳环。聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

2. 发明申请

US20070048670A1 Coating compositions for use in forming patterns and methods of forming patterns 审中-公开
标题翻译：用于形成图案的涂料组合物和形成图案的方法
公开(公告)号：US20070048670A1
公开(公告)日：2007-03-01
申请号：US11397882
申请日：2006-04-05
申请人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
发明人： Sang-jun Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.
摘要翻译：用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。聚合物可以具有被乙烯基醚官能团取代的芳环。聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

3. 发明申请

US20080305638A1 Coating compositions for use in forming patterns and methods of forming patterns 审中-公开
标题翻译：用于形成图案的涂料组合物和形成图案的方法
公开(公告)号：US20080305638A1
公开(公告)日：2008-12-11
申请号：US12222433
申请日：2008-08-08
申请人： Sang-jung Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
发明人： Sang-jung Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
IPC分类号： H01L21/311
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.
摘要翻译：用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。聚合物可以具有被乙烯基醚官能团取代的芳环。聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

4. 发明申请

US20060111550A1 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060111550A1
公开(公告)日：2006-05-25
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： C08F6/00
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

5. 发明授权

US07384730B2 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07384730B2
公开(公告)日：2008-06-10
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03F7/38 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

6. 发明申请

US20060275697A1 Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060275697A1
公开(公告)日：2006-12-07
申请号：US11364707
申请日：2006-02-27
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/2041
摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.
摘要翻译：提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元包含极性基团的重复单元和包含醇的有机溶剂。

7. 发明申请

US20060111547A1 Bottom layer resist polymers for photolithography and methods of manufacturing the same 审中-公开
标题翻译：用于光刻的底层抗蚀剂聚合物及其制造方法
公开(公告)号：US20060111547A1
公开(公告)日：2006-05-25
申请号：US11283841
申请日：2005-11-22
申请人： Mitsuhiro Hata , Sang-gyun Woo , Yool Kang , Man-hyoung Ryoo , Hyun-woo Kim , Jung-hwan Hah
发明人： Mitsuhiro Hata , Sang-gyun Woo , Yool Kang , Man-hyoung Ryoo , Hyun-woo Kim , Jung-hwan Hah
IPC分类号： C08G64/00
CPC分类号： C08G61/12 , C08G61/02 , C08G65/4081 , G03F7/0388 , G03F7/091
摘要： In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3′-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3′-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.
摘要翻译：一方面，底层抗蚀剂聚合物具有基于具有3,3'-二茚基结构的单体单元的扩展的p-电子共轭体系。该方面的底层抗蚀剂聚合物由具有下式表示的3,3'-二茚基结构的重复单元组成：其中l，m和n分别是聚合物单体单元的摩尔分数，其中l + m + n = 1，其中l = 0.1至0.9，m = 0.1至0.9，n = 0至0.8，其中k 1和k 2 2中的每一个独立地为0 或1，并且R 1，R 2，R 3和R 4中的每一个独立地为氢原子或不饱和烃，Z为包含双酚衍生物的单体单元。

8. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

9. 发明授权

US07468235B2 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US07468235B2
公开(公告)日：2008-12-23
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00 , G03C1/76 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1≦1/(1+m+n)≦0.7; 0.3≦m/(1+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf为C1〜C5氟取代烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

10. 发明申请

US20070048671A1 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US20070048671A1
公开(公告)日：2007-03-01
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1≦1/(l+m+n)≦0.7; 0.3≦m/(l+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf是C 5 -C 5氟取代的烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式