专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070155925A1 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US20070155925A1
公开(公告)日：2007-07-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： C08F222/14
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

2. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

3. 发明授权

US07468235B2 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US07468235B2
公开(公告)日：2008-12-23
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00 , G03C1/76 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1≦1/(1+m+n)≦0.7; 0.3≦m/(1+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf为C1〜C5氟取代烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

4. 发明申请

US20070048671A1 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US20070048671A1
公开(公告)日：2007-03-01
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1≦1/(l+m+n)≦0.7; 0.3≦m/(l+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf是C 5 -C 5氟取代的烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

5. 发明申请

US20070048672A1 Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same 失效
标题翻译：包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20070048672A1
公开(公告)日：2007-03-01
申请号：US11447932
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
发明人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/0758 , G03F7/2041
摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
摘要翻译：提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系，基于烷烃的有机溶剂及其混合物。

6. 发明授权

US07361612B2 Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same 失效
标题翻译：包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07361612B2
公开(公告)日：2008-04-22
申请号：US11447932
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
发明人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
IPC分类号： H01L21/469
CPC分类号： G03F7/11 , G03F7/0758 , G03F7/2041
摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
摘要翻译：提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系，基于烷烃的有机溶剂及其混合物。

7. 发明申请

US20070037068A1 Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same 审中-公开
标题翻译：用于光致抗蚀剂的阻挡涂层组合物和使用其形成光致抗蚀剂图案的方法
公开(公告)号：US20070037068A1
公开(公告)日：2007-02-15
申请号：US11447896
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata
发明人： Sang-Jun Choi , Mitsuhiro Hata
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/2041
摘要： Provided are barrier polymers, barrier coating compositions incorporating such polymers and methods for utilizing such barrier coating compositions for suppressing dissolution of photoresist components during immersion photolithography. The barrier polymers may be synthesized from one or more monomers including at least one monomer having a tris(trimethylsiloxy)silyl group and will have a weight average molecular weight (Mw) of 5,000 to 200,000 daltons. The barrier polymer(s) may be combined with one or more organic solvents to form a barrier coating composition that can be applied to a photoresist layer to form a barrier coating layer sufficient to suppress dissolution of components such as PAG into an immersion liquid during exposure processing. The tris(trimethylsiloxy)silyl group monomer(s) may be combined with other monomers, particularly monomers including a polar group, for modifying the hydrophobicity and/or solubility of the resulting barrier coating layer in, for example, a developing solution.
摘要翻译：提供了阻挡聚合物，并入这种聚合物的阻挡涂层组合物以及利用这种阻挡涂层组合物在浸没光刻期间抑制光致抗蚀剂组分溶解的方法。阻挡聚合物可以由一种或多种包含至少一种具有三（三甲基甲硅烷氧基）甲硅烷基的单体的单体合成，并且具有5,000至200,000道尔顿的重均分子量（Mw）。阻隔聚合物可以与一种或多种有机溶剂组合以形成阻隔涂层组合物，其可以施加到光致抗蚀剂层上以形成足以在暴露期间抑制诸如PAG的组分溶解到浸没液体中的溶解的阻隔涂层处理。三（三甲基甲硅烷氧基）甲硅烷基单体可以与其它单体，特别是包括极性基团的单体组合，用于改变所形成的阻挡涂层在例如显影溶液中的疏水性和/或溶解性。

8. 发明授权

US09023582B2 Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition 有权
标题翻译：光敏聚合物，包含光敏聚合物的抗蚀剂组合物和使用抗蚀剂组合物制备抗蚀剂图案的方法
公开(公告)号：US09023582B2
公开(公告)日：2015-05-05
申请号：US13795268
申请日：2013-03-12
申请人： Sang-Jun Choi
发明人： Sang-Jun Choi
IPC分类号： G03F7/20 , C08G63/66 , G03F7/004 , G03F7/039
CPC分类号： C08G63/66 , C08G63/16 , C08G63/672 , G03F7/0045 , G03F7/039 , G03F7/0395 , Y10S430/114 , Y10S430/128
摘要： A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:
摘要翻译：光敏聚合物包括由式1表示的重复单元，光敏聚合物的重均分子量为约3,000至约50,000：

9. 发明授权

US08637942B2 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US08637942B2
公开(公告)日：2014-01-28
申请号：US12461992
申请日：2009-08-31
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L29/78
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

10. 发明申请

US20120077301A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20120077301A1
公开(公告)日：2012-03-29
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式