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1. 发明申请

US20070155925A1 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US20070155925A1
公开(公告)日：2007-07-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： C08F222/14
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

2. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

3. 发明申请

US20060111550A1 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060111550A1
公开(公告)日：2006-05-25
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： C08F6/00
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

4. 发明授权

US07384730B2 Top coating composition for photoresist and method of forming photoresist pattern using same 有权
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07384730B2
公开(公告)日：2008-06-10
申请号：US11281775
申请日：2005-11-17
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Sang-Gyun Woo , Hyun-Woo Kim , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03F7/38 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , C08F220/06 , C08F220/18 , G03F7/2041 , Y10S430/146 , Y10S430/162
摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.
摘要翻译：提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

5. 发明申请

US20060275697A1 Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
标题翻译：用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20060275697A1
公开(公告)日：2006-12-07
申请号：US11364707
申请日：2006-02-27
申请人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
发明人： Mitsuhiro Hata , Man-Hyoung Ryoo , Hyun-Woo Kim , Sang-Gyun Woo , Jin-Young Yoon , Jung-Hwan Hah
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/2041
摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.
摘要翻译：提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元包含极性基团的重复单元和包含醇的有机溶剂。

6. 发明授权

US07468235B2 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US07468235B2
公开(公告)日：2008-12-23
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00 , G03C1/76 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1≦1/(1+m+n)≦0.7; 0.3≦m/(1+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf为C1〜C5氟取代烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

7. 发明申请

US20070048671A1 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US20070048671A1
公开(公告)日：2007-03-01
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1≦1/(l+m+n)≦0.7; 0.3≦m/(l+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf是C 5 -C 5氟取代的烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

8. 发明申请

US20060160028A1 Method of forming fine patterns of a semiconductor device 审中-公开
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：US20060160028A1
公开(公告)日：2006-07-20
申请号：US11328404
申请日：2006-01-09
申请人： Hyung-Rae Lee , Yool Kang , Sang-Gyun Woo , Man-Hyoung Ryoo , Suk-Joo Jee
发明人： Hyung-Rae Lee , Yool Kang , Sang-Gyun Woo , Man-Hyoung Ryoo , Suk-Joo Jee
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , G03F7/0045
摘要： Methods of forming fine patterns of a semiconductor device include forming a positive first photoresist layer on a semiconductor substrate, including initiating an exposure reaction at a first dose. The first photoresist layer is exposed and developed to form first photoresist patterns. A second photoresist layer is formed on a region of the semiconductor substrate including the first photoresist patterns, including terminating an exposure reaction at a second dose no greater than the first dose. The second photoresist layer is exposed and developed to form second photoresist patterns between the first photoresist patterns. Methods of forming fine patterns having a negative first photoresist layer are also provided.
摘要翻译：形成半导体器件的精细图案的方法包括在半导体衬底上形成正的第一光致抗蚀剂层，包括以第一剂量引发曝光反应。第一光致抗蚀剂层被曝光和显影以形成第一光致抗蚀剂图案。在包括第一光致抗蚀剂图案的半导体衬底的区域上形成第二光致抗蚀剂层，包括以不大于第一剂量的第二剂量终止曝光反应。第二光致抗蚀剂层被曝光和显影以在第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案。还提供了形成具有负的第一光致抗蚀剂层的精细图案的方法。

9. 发明申请

US20060115772A1 Polymeric tetrahedral carbon films, methods of forming the same and methods of forming fine patterns using the same 审中-公开
标题翻译：聚合四面体碳膜，其形成方法和使用其形成精细图案的方法
公开(公告)号：US20060115772A1
公开(公告)日：2006-06-01
申请号：US11282368
申请日：2005-11-18
申请人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
发明人： Jung-Hwan Hah , Yool Kang , Man-Hyoung Ryoo , Shi-Yong Yi , Sang-Gyun Woo
IPC分类号： G03C5/00
CPC分类号： G03F7/091 , C08G61/02
摘要： The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.
摘要翻译：本发明提供了聚合物膜，其包括具有包含四面体中心原子的sp 3 O 3碳主框的聚合物。还提供了形成它们的方法，包括其的硬标记和使用其形成精细图案的方法。

10. 发明申请

US20060115747A1 Photo mask structure used during twice-performed photo process and methods of using the same 审中-公开
标题翻译：在两次照相过程中使用的光掩模结构及其使用方法
公开(公告)号：US20060115747A1
公开(公告)日：2006-06-01
申请号：US11281466
申请日：2005-11-18
申请人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
发明人： Hyung-Rae Lee , Jin-Young Yoon , Sang-Gyun Woo , Man-Hyoung Ryoo , Min-Jeong Oh
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/70
摘要： A photo mask structure used during a twice-performed photo process and methods of using the same. The photo mask structure may include first mask patterns that correspond to first photoresist patterns during a first photo process performed on a first photoresist layer and second mask patterns that correspond to second photoresist patterns during a second photo process performed on a second photoresist layer. A method of using a photo mask structure may include performing a first photo process on a first photoresist layer using first mask patterns of the photo mask structure to form first photoresist patterns on a semiconductor substrate, and performing a second photo process on a second photoresist layer using second mask patterns of the photo mask structure to form second photoresist patterns on a semiconductor substrate, wherein the second photoresist patterns are interposed between the first photoresist patterns and overlap the first photoresist patterns.
摘要翻译：在两次照相处理过程中使用的光掩模结构及其使用方法。光掩模结构可以包括在对第一光致抗蚀剂层执行的第一光刻工艺期间对应于第一光致抗蚀剂图案的第一掩模图案和在对第二光致抗蚀剂层执行的第二光刻工艺期间对应于第二光致抗蚀剂图案的第二掩模图案。使用光掩模结构的方法可以包括使用光掩模结构的第一掩模图案在第一光致抗蚀剂层上进行第一光刻工艺以在半导体衬底上形成第一光致抗蚀剂图案，并且在第二光刻胶层上进行第二光刻工艺使用所述光掩模结构的第二掩模图案在半导体衬底上形成第二光致抗蚀剂图案，其中所述第二光致抗蚀剂图案插入在所述第一光致抗蚀剂图案之间并与所述第一光致抗蚀剂图案重叠。

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