会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Programmable memory devices with latching buffer circuit and methods for operating the same
    • 具有锁存缓冲电路的可编程存储器件及其操作方法
    • US06826082B2
    • 2004-11-30
    • US10403739
    • 2003-03-31
    • Sang-Won HwangSung-Soo Lee
    • Sang-Won HwangSung-Soo Lee
    • G11C1604
    • G11C16/3459G11C7/065G11C16/24
    • Programmable memory devices include a memory cell having an associated bit line. A buffer circuit couples the bit line to a data line. The buffer circuit has a sense node coupled to the bit line and includes a latch circuit having a latch node coupled to the data line. A control circuit resets the latch node between a program operation of the memory cell and its corresponding program-verify operation. The memory devices may be NAND-type flash memory devices and the memory cell may be one of a string of memory cells connected in series between the bit line and a common source line. A transistor may couple the data line to the latch node and a transistor may couple the latch node to the sense node. Methods of operating the same are also provided.
    • 可编程存储器件包括具有相关位线的存储单元。 缓冲电路将位线耦合到数据线。 缓冲电路具有耦合到位线的感测节点,并且包括具有耦合到数据线的锁存节点的锁存电路。 控制电路在存储器单元的编程操作与其对应的程序验证操作之间复位锁存节点。 存储器件可以是NAND型闪存器件,并且存储器单元可以是在位线和公共源极线之间串联连接的一串存储器单元之一。 晶体管可以将数据线耦合到锁存节点,并且晶体管可以将锁存器节点耦合到感测节点。 还提供了其操作方法。
    • 4. 发明授权
    • Organic light emitting device
    • 有机发光装置
    • US08283852B2
    • 2012-10-09
    • US12473904
    • 2009-05-28
    • Sung-Soo LeeJoo-Hyeon Lee
    • Sung-Soo LeeJoo-Hyeon Lee
    • H01L51/50
    • H01L51/5265H01L51/5215
    • An organic light emitting device includes: a substrate; thin film structures formed on the substrate; a pixel electrode including a metal layer formed on the thin film structures, and a transparent conductor layer formed on the metal layer; a common electrode facing the pixel electrode; and an organic light emitting member disposed between the pixel electrode and the common electrode, wherein the organic light emitting member includes an emission layer and a plurality of auxiliary layers, and the profile thickness of a first layer as at least one layer among the emission layer and the auxiliary layers on the substrate is different from the profile thickness of at least one second layer that is different from the first layer among the emission layer and the auxiliary layers.
    • 一种有机发光器件包括:衬底; 形成在基板上的薄膜结构; 包括形成在所述薄膜结构上的金属层的像素电极和形成在所述金属层上的透明导体层; 面对像素电极的公共电极; 以及设置在所述像素电极和所述公共电极之间的有机发光部件,其中所述有机发光部件包括发光层和多个辅助层,并且所述发光层中的至少一层的第一层的轮廓厚度 衬底上的辅助层与发光层和辅助层中与第一层不同的至少一个第二层的轮廓厚度不同。
    • 8. 发明授权
    • Organic light emitting device
    • 有机发光装置
    • US07816677B2
    • 2010-10-19
    • US12112292
    • 2008-04-30
    • Sung-Soo LeeJin-Koo ChungSeong-Min KimChang-Woong Chu
    • Sung-Soo LeeJin-Koo ChungSeong-Min KimChang-Woong Chu
    • H01L35/24H01L51/00
    • H01L51/5265H01L27/3213H01L27/322H01L27/3244H01L27/3258H01L51/5215
    • An organic light emitting device includes first, second, and third pixels each displaying a different color. Each pixel includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first and second electrodes. The first electrodes of the first and second pixels respectively include a first transparent conductive layer and a translucent conductive layer disposed on at least one of lower and upper portions of the first transparent conductive layer and forming microcavities together with the second electrodes, and the first electrode of the third pixel includes a second transparent conductive layer that is different from the first transparent conductive layer and a translucent conductive layer disposed on at least one of upper and lower portions of the second transparent conductive layer and forming a microcavity together with the second electrode.
    • 有机发光器件包括每个显示不同颜色的第一,第二和第三像素。 每个像素包括第一电极,面对第一电极的第二电极和第一和第二电极之间的发射层。 第一和第二像素的第一电极分别包括第一透明导电层和设置在第一透明导电层的下部和上部中的至少一个上的半透明导电层,并与第二电极一起形成微腔,并且第一电极 所述第三像素包括与所述第一透明导电层不同的第二透明导电层和设置在所述第二透明导电层的上部和下部中的至少一个上的透光性导电层,并与所述第二电极一起形成微腔。
    • 9. 发明授权
    • Page-buffer and non-volatile semiconductor memory including page buffer
    • 页缓冲器和非易失性半导体存储器,包括页缓冲器
    • US07724575B2
    • 2010-05-25
    • US12035028
    • 2008-02-21
    • Sung-Soo LeeYoung-Ho LimHyun-Chul ChoDong-Hyuk Chae
    • Sung-Soo LeeYoung-Ho LimHyun-Chul ChoDong-Hyuk Chae
    • G11C16/04
    • G11C16/0483G11C16/26
    • In one aspect a non-volatile memory device is provided which is operable in a programming mode and a read mode. The memory device includes a memory cell array which includes a plurality of non-volatile memory cells, a plurality of word lines, and a plurality of bit lines. The memory device further includes an internal data output line for outputting data read from the bit lines of the memory array, and a page buffer operatively connected between a bit line of the memory cell array and the internal data output line. The page buffer includes a sense node which is selectively connected to the bit line, a latch circuit having a latch node which is selectively connected to the sense node, a latch input path which sets a logic voltage of the latch node in the programming mode and the read mode, and a latch output path which is separate from the latch input path and which sets as logic voltage of the internal date output line according to the logic voltage of the latch node.
    • 在一个方面,提供可在编程模式和读取模式下操作的非易失性存储器件。 存储器件包括存储单元阵列,其包括多个非易失性存储器单元,多个字线和多个位线。 存储器件还包括用于输出从存储器阵列的位线读取的数据的内部数据输出线以及可操作地连接在存储单元阵列的位线和内部数据输出线之间的页缓冲器。 页面缓冲器包括选择性地连接到位线的感测节点,具有选择性地连接到感测节点的锁存节点的锁存电路,将锁存节点的逻辑电压设置为编程模式的锁存器输入路径,以及 读取模式和与锁存器输入路径分离并根据锁存节点的逻辑电压设置为内部日期输出线的逻辑电压的锁存器输出路径。