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1. 发明申请

US20080168214A1 MEMORY SYSTEM AND METHOD USING SCRAMBLED ADDRESS DATA 审中-公开
标题翻译：使用SCRAMBLED地址数据的存储器系统和方法
公开(公告)号：US20080168214A1
公开(公告)日：2008-07-10
申请号：US11969261
申请日：2008-01-04
申请人： Oh-Suk Kwon , Sung-Soo Lee , Dae-Seok Byeon
发明人： Oh-Suk Kwon , Sung-Soo Lee , Dae-Seok Byeon
IPC分类号： G06F12/02
CPC分类号： G06F12/023 , G06F12/0246 , G06F2212/2022
摘要： A memory system and a method of provided scrambled address data are disclosed. The method includes converting external address data into row and column addresses provided to a flash memory device, and designating certain scrambled address data values within the external address data and ignoring a current data access operation associated with external address data including a scrambled address data value, such that the plurality of physical pages in each memory block is not selected by the internal address data.
摘要翻译：公开了一种提供加扰地址数据的存储系统和方法。该方法包括将外部地址数据转换成提供给闪存设备的行和列地址，以及指定外部地址数据内的某些加扰地址数据值，并忽略与包括加扰地址数据值的外部地址数据相关联的当前数据访问操作，使得每个存储器块中的多个物理页不被内部地址数据选择。

2. 发明申请

US20050270882A1 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices 有权
标题翻译：具有用于非易失性半导体存储器件的集成放电路径的高压发生器
公开(公告)号：US20050270882A1
公开(公告)日：2005-12-08
申请号：US10915294
申请日：2004-08-10
申请人： Wook-Ghee Han , Dae-Seok Byeon , Sung-Soo Lee , Young-Ho Lim
发明人： Wook-Ghee Han , Dae-Seok Byeon , Sung-Soo Lee , Young-Ho Lim
IPC分类号： G11C5/14 , G11C11/34 , G11C16/04 , G11C16/12 , G11C16/30
CPC分类号： G11C16/12 , G11C5/145
摘要： High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
摘要翻译：高压发生器包括电荷泵和包括集成放电路径的纹波降低电路。当电荷泵处于第一操作模式时，纹波降低电路限制来自电荷泵的电压电平，并且当电荷泵处于第一操作模式时提供从脉动降低电路的输出端子到电荷泵的输出的放电路径第二种操作模式。还提供了包括这种高电压发生器的半导体存储器。还提供具有集成放电路径的耦合电路。

3. 发明申请

US20060044923A1 Programming circuits and methods for multimode non-volatile memory devices 有权
标题翻译：多模非易失性存储器件的编程电路和方法
公开(公告)号：US20060044923A1
公开(公告)日：2006-03-02
申请号：US11020517
申请日：2004-12-22
申请人： Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
发明人： Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
IPC分类号： G11C8/00
CPC分类号： G11C8/08 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/30 , G11C2211/5641
摘要： A non-volatile memory device includes non-volatile memory cells, a respective one of which is configured to store a single bit in a single bit mode, and to store more than one bit in a multi-bit mode. A single voltage divider is configured to generate at a least a first program voltage for the non-volatile memory cells in the single bit mode, and to generate at least a second program voltage that is different from the first program voltage, for the non-volatile memory cells in the multi-bit mode.
摘要翻译：非易失性存储器件包括非易失性存储器单元，其相应的一个被配置为以单位模式存储单个位，并且以多位模式存储多个位。单个分压器被配置为以单比特模式在非易失性存储器单元中产生至少第一编程电压，并且生成与第一编程电压不同的至少第二编程电压，多位模式下的易失性存储单元。

4. 发明授权

US07151702B2 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices 有权
标题翻译：具有用于非易失性半导体存储器件的集成放电路径的高压发生器
公开(公告)号：US07151702B2
公开(公告)日：2006-12-19
申请号：US10915294
申请日：2004-08-10
申请人： Wook-Ghee Han , Dae-Seok Byeon , Sung-Soo Lee , Young-Ho Lim
发明人： Wook-Ghee Han , Dae-Seok Byeon , Sung-Soo Lee , Young-Ho Lim
IPC分类号： G11C5/14
CPC分类号： G11C16/12 , G11C5/145
摘要： High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
摘要翻译：高压发生器包括电荷泵和包括集成放电路径的纹波降低电路。当电荷泵处于第一操作模式时，纹波降低电路限制来自电荷泵的电压电平，并且当电荷泵处于第一操作模式时提供从脉动降低电路的输出端子到电荷泵的输出的放电路径第二种操作模式。还提供了包括这种高电压发生器的半导体存储器。还提供具有集成放电路径的耦合电路。

5. 发明授权

US07110292B2 Programming circuits and methods for multimode non-volatile memory devices 有权
公开(公告)号：US07110292B2
公开(公告)日：2006-09-19
申请号：US11020517
申请日：2004-12-22
申请人： Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
发明人： Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C8/08 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/30 , G11C2211/5641
摘要： A non-volatile memory device includes non-volatile memory cells, a respective one of which is configured to store a single bit in a single bit mode, and to store more than one bit in a multi-bit mode. A single voltage divider is configured to generate at a least a first program voltage for the non-volatile memory cells in the single bit mode, and to generate at least a second program voltage that is different from the first program voltage, for the non-volatile memory cells in the multi-bit mode.

6. 发明授权

US09368744B2 Organic light emitting diode device including multiple hole injection layers 有权
标题翻译：有机发光二极管装置包括多个空穴注入层
公开(公告)号：US09368744B2
公开(公告)日：2016-06-14
申请号：US13064532
申请日：2011-03-30
申请人： Young-Shin Lee , Jae-Kook Ha , Sung-Soo Lee
发明人： Young-Shin Lee , Jae-Kook Ha , Sung-Soo Lee
IPC分类号： H01L51/50
CPC分类号： H01L51/5088 , H01L51/5004 , H01L2251/552
摘要： An organic light emitting diode device, including a first electrode, a second electrode facing the first electrode, and a light emitting member disposed between the first electrode and the second electrode, the light emitting member including at least one light emitting unit. At least one of the light emitting units may include a first hole injection layer, a second hole injection layer, a hole transport layer, and an emission layer, and a difference between a HOMO energy level of the first hole injection layer and a LUMO energy level of the second hole injection layer may be smaller than about 0.5 eV.
摘要翻译：一种有机发光二极管装置，包括第一电极，面对第一电极的第二电极和设置在第一电极和第二电极之间的发光部件，发光部件包括至少一个发光单元。至少一个发光单元可以包括第一空穴注入层，第二空穴注入层，空穴传输层和发射层，以及第一空穴注入层的HOMO能级与LUMO能量之间的差第二空穴注入层的电平可以小于约0.5eV。

7. 发明申请

US20130001612A1 Light Emitting Structure, Display Device Including a Light Emitting Structure and Method of Manufacturing a Display Device Including a Light Emitting Structure 有权
标题翻译：发光结构，包括发光结构的显示装置和制造包括发光结构的显示装置的方法
公开(公告)号：US20130001612A1
公开(公告)日：2013-01-03
申请号：US13299311
申请日：2011-11-17
申请人： Sung-Soo Lee , Ok-Keun Song , Se-Il Kim
发明人： Sung-Soo Lee , Ok-Keun Song , Se-Il Kim
IPC分类号： H01L33/44 , H01L33/36
CPC分类号： H01L51/56 , H01L27/3211 , H01L27/3272 , H01L51/504 , H01L51/5096 , H01L51/5265 , H01L2227/323
摘要： A light emitting structure includes a first hole injection layer, a first organic light emitting layer, a charge generation layer, a second hole injection layer, a second organic light emitting layer, an electron transfer layer, and a blocking member. The light emitting structure has first, second, and third sub-pixel regions. The first organic light emitting layer may be on the first hole injection layer. The charge generation layer may be on the first organic light emitting layer. The second hole injection layer may be on the charge generation layer. The second organic light emitting layer may be on the second hole injection layer. The electron transfer layer may be on the second organic light emitting layer. The blocking member may be at at least one of the first to the third sub-pixel regions.
摘要翻译：发光结构包括第一空穴注入层，第一有机发光层，电荷产生层，第二空穴注入层，第二有机发光层，电子转移层和阻挡构件。发光结构具有第一，第二和第三子像素区域。第一有机发光层可以在第一空穴注入层上。电荷产生层可以在第一有机发光层上。第二空穴注入层可以在电荷产生层上。第二有机发光层可以在第二空穴注入层上。电子转移层可以在第二有机发光层上。阻挡构件可以在第一至第三子像素区域中的至少一个上。

8. 发明授权

US08283852B2 Organic light emitting device 失效
标题翻译：有机发光装置
公开(公告)号：US08283852B2
公开(公告)日：2012-10-09
申请号：US12473904
申请日：2009-05-28
申请人： Sung-Soo Lee , Joo-Hyeon Lee
发明人： Sung-Soo Lee , Joo-Hyeon Lee
IPC分类号： H01L51/50
CPC分类号： H01L51/5265 , H01L51/5215
摘要： An organic light emitting device includes: a substrate; thin film structures formed on the substrate; a pixel electrode including a metal layer formed on the thin film structures, and a transparent conductor layer formed on the metal layer; a common electrode facing the pixel electrode; and an organic light emitting member disposed between the pixel electrode and the common electrode, wherein the organic light emitting member includes an emission layer and a plurality of auxiliary layers, and the profile thickness of a first layer as at least one layer among the emission layer and the auxiliary layers on the substrate is different from the profile thickness of at least one second layer that is different from the first layer among the emission layer and the auxiliary layers.
摘要翻译：一种有机发光器件包括：衬底; 形成在基板上的薄膜结构; 包括形成在所述薄膜结构上的金属层的像素电极和形成在所述金属层上的透明导体层; 面对像素电极的公共电极; 以及设置在所述像素电极和所述公共电极之间的有机发光部件，其中所述有机发光部件包括发光层和多个辅助层，并且所述发光层中的至少一层的第一层的轮廓厚度衬底上的辅助层与发光层和辅助层中与第一层不同的至少一个第二层的轮廓厚度不同。

9. 发明授权

US07952276B2 Organic light emitting display and method of manufacturing the same 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US07952276B2
公开(公告)日：2011-05-31
申请号：US12421621
申请日：2009-04-09
申请人： Sung-Soo Lee , Chang-Woong Chu , Jin-Koo Chung
发明人： Sung-Soo Lee , Chang-Woong Chu , Jin-Koo Chung
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/5234 , H01L27/3295 , H01L51/5203 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2251/5315
摘要： In a method of manufacturing an organic light emitting display, an organic light emitting layer and a second electrode are sequentially formed on a first sub-electrode, and a laser beam is irradiated onto the organic light emitting layer to partially remove the organic light emitting layer, so that the first sub-electrode is electrically connected to the second electrode. Thus, even though the second electrode is formed to have a small thickness in order to maximize an amount of light that is generated by the organic light emitting layer and exits to an exterior through the second electrode, the second electrode is electrically connected to the first sub-electrode, thereby reducing an electrical resistance of the second electrode.
摘要翻译：在制造有机发光显示器的方法中，有机发光层和第二电极依次形成在第一子电极上，激光束照射到有机发光层上以部分地去除有机发光层使得第一子电极电连接到第二电极。因此，即使第二电极形成为具有小的厚度，以便使由有机发光层产生的光的量最大化并通过第二电极离开到外部，第二电极电连接到第一电极从而降低第二电极的电阻。

10. 发明授权

US07906896B2 Organic light-emitting diode display device with porous polymer heat insulating member 有权
标题翻译：有机发光二极管显示装置，带多孔聚合物隔热构件
公开(公告)号：US07906896B2
公开(公告)日：2011-03-15
申请号：US11647664
申请日：2006-12-29
申请人： Dong-Jin Seo , Sung-Soo Lee , Yong-Woo Lee
发明人： Dong-Jin Seo , Sung-Soo Lee , Yong-Woo Lee
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/529 , H01L51/5237
摘要： An organic light-emitting diode (OLED) display device includes a display panel having an OLED element, a receiving container to receive the display panel, a driving circuit part that is disposed under the receiving container and drives the display panel, and a heat insulating member that is disposed between the display panel and the receiving container, and comprises a porous polymer. Deterioration of the light-emitting layer may be prevented and/or reduced to increase durability of the OLED display device.
摘要翻译：有机发光二极管（OLED）显示装置包括具有OLED元件的显示面板，用于接收显示面板的接收容器，设置在接收容器下方并驱动显示面板的驱动电路部分，以及绝热构件，其设置在显示面板和接收容器之间，并且包括多孔聚合物。可以防止和/或减少发光层的劣化以增加OLED显示装置的耐久性。

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