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1. 发明申请

WO2016069148A1 TWO-STROBE SENSING FOR NONVOLATILE STORAGE 审中-公开
标题翻译：用于非易失存储的双路感测
公开(公告)号：WO2016069148A1
公开(公告)日：2016-05-06
申请号：PCT/US2015/052077
申请日：2015-09-24
申请人： SANDISK TECHNOLOGIES INC.
发明人： DUTTA, Deepanshu , MIAO, Xiaochang , HEMINK, Gerrit Jan
IPC分类号： G11C11/56 , G11C16/34
CPC分类号： G11C16/3459 , G11C11/5628 , G11C11/5642 , G11C16/3418 , G11C2211/5624
摘要： A non-volatile storage system includes a plurality of non-volatile storage elements, a plurality of bit lines connected to the non-volatile storage elements, a plurality of word lines connected to the non-volatile storage elements, and one or more control circuits connected to the bit lines and word lines. The one or more control circuits perform programming, verifying, reading and erasing for the non-volatile storage elements. When verifying, a first subset of bit lines connected to non-volatile storage elements are charged to allow for sensing, while a second subset of bit lines are not charged. When reading, a two strobe sensing process is selectively used to more accurately read data from the non-volatile storage elements.
摘要翻译：非易失性存储系统包括多个非易失性存储元件，连接到非易失性存储元件的多个位线，连接到非易失性存储元件的多个字线以及一个或多个控制电路连接到位线和字线。一个或多个控制电路对非易失性存储元件执行编程，验证，读取和擦除。当验证时，连接到非易失性存储元件的位线的第一子集被充电以允许感测，而位线的第二子集不被充电。当读取时，选择性地使用两个频闪检测处理来更准确地从非易失性存储元件读取数据。

2. 发明申请

WO2013147936A1 SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE DURING PROGRAMNMING 审中-公开
标题翻译：在编程期间选定的字线相关选择门限扩展区域电压
公开(公告)号：WO2013147936A1
公开(公告)日：2013-10-03
申请号：PCT/US2012/066610
申请日：2012-11-27
申请人： SANDISK TECHNOLOGIES, INC. , LAI, Chun-Hung , SATO, Shinji , LEE, Shih-Chung , HEMINK, Gerrit Jan
发明人： LAI, Chun-Hung , SATO, Shinji , LEE, Shih-Chung , HEMINK, Gerrit Jan
IPC分类号： G11C11/56 , G11C16/04 , G11C16/10
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/04 , G11C16/06 , G11C16/10 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于为编程选择的字线的位置。应用所选字线相关程序条件可能会减少或消除程序干扰。施加到公共源极线的电压可以取决于被选择用于编程的字线的位置。这可以防止或减少穿通传导，这可以防止或减少程序干扰。施加到未选择NAND串的位线的电压可能取决于选择用于编程的字线的位置。这可以防止或减少穿透传导。

3. 发明申请

WO2016069147A1 WORD LINE DEPENDENT TWO STROBE SENSING MODE FOR NONVOLATILE STORAGE ELEMENTS 审中-公开
标题翻译：非线性存储元件的字线相关的两个结构感测模式
公开(公告)号：WO2016069147A1
公开(公告)日：2016-05-06
申请号：PCT/US2015/052076
申请日：2015-09-24
申请人： SANDISK TECHNOLOGIES INC.
发明人： DUTTA, Deepanshu , MIAO, Xiaochang , HEMINK, Gerrit Jan
IPC分类号： G11C11/56 , G11C16/26 , G11C16/34
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/28 , G11C16/3427
摘要： A non-volatile storage system includes a plurality of non-volatile storage elements, a plurality of bit lines connected to the non-volatile storage elements, a plurality of word lines connected to the nonvolatile storage elements, and one or more control circuits connected to the bit lines and word lines. The one or more control circuits perform programming, verifying, reading and erasing for the nonvolatile storage elements. When verifying, a first subset of bit lines connected to non-volatile storage elements are charged to allow for sensing, while a second subset of bit lines are not charged. When reading, a one strobe sensing process or a two strobe sensing process is selectively used to more accurately read data from the non-volatile storage elements, depending on whether the selected word line is within a threshold distance of a charging source for the selected bit lines.
摘要翻译：非易失性存储系统包括多个非易失性存储元件，连接到非易失性存储元件的多个位线，连接到非易失性存储元件的多个字线以及连接到非易失性存储元件的一个或多个控制电路位线和字线。一个或多个控制电路对非易失性存储元件执行编程，验证，读取和擦除。当验证时，连接到非易失性存储元件的位线的第一子集被充电以允许感测，而位线的第二子集不被充电。当读取时，根据所选择的字线是否在所选择的位的充电源的阈值距离内，选择性地使用一个选通感测处理或两个选通感测处理以更准确地从非易失性存储元件读取数据线。

4. 发明授权

EP2074630B1 CONTROLLED BOOSTING IN NON-VOLATILE MEMORY SOFT PROGRAMMING 有权
标题翻译：受控拉动了非挥发性存储器软编程
公开(公告)号：EP2074630B1
公开(公告)日：2013-01-23
申请号：EP07845063.2
申请日：2007-11-12
申请人： SanDisk Technologies Inc.
发明人： HEMINK, Gerrit Jan
IPC分类号： G11C16/34 , G11C11/56
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3404 , G11C16/3409 , G11C16/3413 , G11C16/3418 , G11C16/3427

5. 发明授权

EP2831883B1 NONVOLATILE MEMORY PROGRAMMING WITH STRING SELECT TRANSISTOR DIFFUSION REGION VOLTAGE DEPENDENT ON LOCATION OF SELECTED WORD LINE 有权转让
标题翻译：的选定字线相依扩散面积功率为选定的门编程过程中
公开(公告)号：EP2831883B1
公开(公告)日：2016-04-27
申请号：EP12798122.3
申请日：2012-11-27
申请人： SanDisk Technologies Inc.
发明人： LAI, Chun-Hung , SATO, Shinji , LEE, Shih-Chung , HEMINK, Gerrit Jan
IPC分类号： G11C11/56 , G11C16/04 , G11C16/10 , G11C29/02 , G11C29/12
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/04 , G11C16/06 , G11C16/10 , G11C29/021 , G11C29/028 , G11C2029/1202

6. 发明授权

EP2467854B1 SELECTIVE MEMORY CELL PROGRAM AND ERASE 有权转让
标题翻译：选择性记忆单元进行编程和消光
公开(公告)号：EP2467854B1
公开(公告)日：2015-02-25
申请号：EP10745708.7
申请日：2010-08-17
申请人： SanDisk Technologies Inc.
发明人： DONG, Yingda , KUO, Tien-chien , HEMINK, Gerrit Jan
IPC分类号： G11C16/16 , G11C16/10 , G11C16/34 , G11C16/04 , G11C11/56
CPC分类号： G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/30 , G11C16/3418 , G11C2211/5641

7. 发明公开

EP2528096A1 Flash memory device comprising a booster plate 有权转让
标题翻译： Programmierverfahren einer Flash-Speichervorrichtung mit einerVerstärkerplatte
公开(公告)号：EP2528096A1
公开(公告)日：2012-11-28
申请号：EP12181789.4
申请日：2006-02-17
申请人： SanDisk Technologies, Inc.
发明人： Fang, Hao , Phat, Tuan , Higashitani, Masaaki , HEMINK, Gerrit Jan
IPC分类号： H01L27/115 , H01L27/105
CPC分类号： H01L27/11529 , G11C16/0483 , H01L27/105 , H01L27/11526
摘要： A NAND flash memory device incorporates a unique booster plate design. The booster plate is biased during read and program operations and the coupling to the floating gates in many cases reduces the voltage levels necessary to program and read the charge stored in the gates. The booster plate also shields against unwanted coupling between floating gates. Self boosting, local self boosting, and erase area self boosting modes used with the unique booster plate further improve read/write reliability and accuracy. A more compact and reliable memory device can hence be realized according to the present invention.
摘要翻译： NAND闪存器件采用独特的增压板设计。升压板在读取和编程操作期间被偏置，并且在许多情况下耦合到浮动栅极降低了编程和读取存储在门中的电荷所需的电压电平。升压板还可屏蔽浮动栅极之间的不必要的耦合。自升压，局部自升压，以及独特升压板使用的擦除区域自增强模式进一步提高了读/写可靠性和精度。因此，根据本发明可以实现更紧凑和可靠的存储器件。

8. 发明公开

EP2467854A1 SELECTIVE MEMORY CELL PROGRAM AND ERASE 有权转让
标题翻译：选择性记忆单元进行编程和消光
公开(公告)号：EP2467854A1
公开(公告)日：2012-06-27
申请号：EP10745708.7
申请日：2010-08-17
申请人： SanDisk Technologies, Inc.
发明人： DONG, Yingda , KUO, Tien-chien , HEMINK, Gerrit Jan
IPC分类号： G11C16/16 , G11C16/10 , G11C16/34
CPC分类号： G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/30 , G11C16/3418 , G11C2211/5641
摘要： Techniques are disclosed herein for programming memory arrays to achieve high program/erase cycle endurance. In some aspects, only selected word lines (WL) are programmed with other WLs remaining unprogrammed. As an example, only the even word lines are programmed with the odd WLs left unprogrammed. After all of the even word lines are programmed and the data block is to be programmed with new data, the block is erased. Later, only the odd word lines are programmed. The data may be transferred to a block that stores multiple bit per memory cell prior to the erase. In one aspect, the data is programmed in a checkerboard pattern with some memory cells programmed and others left unprogrammed. Later, after erasing the data, the previously unprogrammed part of the checkerboard pattern is programmed with remaining cells unprogrammed.

9. 发明公开

EP2446442A1 DETECTING THE COMPLETION OF PROGRAMMING FOR NON-VOLATILE STORAGE 审中-公开
标题翻译：编程语句对非挥发性内存检测功能
公开(公告)号：EP2446442A1
公开(公告)日：2012-05-02
申请号：EP10726384.0
申请日：2010-06-08
申请人： SanDisk Technologies Inc.
发明人： HEMINK, Gerrit Jan
IPC分类号： G11C16/10 , G11C16/34 , G11C11/56
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3454
摘要： A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations (Vva, Vvb, Vvc) are performed to determine whether the non-volatile storage elements have reached their target condition to store the appropriate data. Programming can be stopped when all non-volatile storage elements have reached their target level or when the number of non-volatile storage elements that have not reached their target level is less than a number or memory cells that can be corrected using an error correction process during a read operation (or other operation). The number of non-volatile storage elements that have not reached their target level can be estimated by counting the number of non volatile storage elements that have not reached a condition (VvIc) that is different (e.g., lower) than the target level.

10. 发明授权

EP2467854B8 SELECTIVE MEMORY CELL PROGRAM AND ERASE 有权转让
标题翻译：选择性存储器单元程序和擦除
公开(公告)号：EP2467854B8
公开(公告)日：2015-06-03
申请号：EP10745708.7
申请日：2010-08-17
申请人： SanDisk Technologies, Inc.
发明人： DONG, Yingda , KUO, Tien-chien , HEMINK, Gerrit Jan
IPC分类号： G11C16/16 , G11C16/10 , G11C16/34 , G11C16/04 , G11C11/56
CPC分类号： G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/30 , G11C16/3418 , G11C2211/5641

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