专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2014088803A1 NON-VOLATILE STORAGE NAND STRING SELECT GATE VOLTAGE LOWERED DURING PROGRAMMING 审中-公开
标题翻译：非易失性存储NAND STRING在编程期间选择门电压降低
公开(公告)号：WO2014088803A1
公开(公告)日：2014-06-12
申请号：PCT/US2013/070841
申请日：2013-11-19
申请人： SANDISK TECHNOLOGIES, INC. , DUTTA, Deepanshu , SATO, Shinji , HIGASHITANI, Masaaki , YANO, Fumiko , LAI, Chun-Hung
发明人： DUTTA, Deepanshu , SATO, Shinji , HIGASHITANI, Masaaki , YANO, Fumiko , LAI, Chun-Hung
IPC分类号： G11C16/24 , G11C11/56
CPC分类号： G11C16/3427 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/12 , G11C16/24
摘要： Techniques disclosed herein may prevent program disturb by preventing a select transistor of an unselected NAND string from unintentionally turning on. The Vgs of a select transistor of a NAND string may be lowered from one programming pulse to the next programming pulse multiple times. The select transistor may be a drain side select transistor or a source side select transistor. Progressively lowering the Vgs of the select transistor of an unselected NAND string as programming progresses may prevent the select transistor from unintentionally turning on. Therefore, program disturb is prevented or reduced. Vgs may be lowered by applying a lower voltage to a select line associated with the select transistor. Vgs may be lowered by applying a higher voltage to bit lines associated with the unselected NAND strings as programming progresses. Vgs may be lowered by applying a higher voltage to a common source line as programming progresses.
摘要翻译：本文公开的技术可以通过防止未选择的NAND串的选择晶体管无意地导通来阻止程序干扰。 NAND串的选择晶体管的Vgs可以从一个编程脉冲多次降低到下一个编程脉冲。选择晶体管可以是漏极侧选择晶体管或源极侧选择晶体管。随着编程进行，逐渐降低未选择的NAND串的选择晶体管的Vgs可以防止选择晶体管无意地导通。因此，防止或减少程序干扰。可以通过对与选择晶体管相关联的选择线施加较低的电压来降低Vgs。当编程进行时，可以通过对与未选择的NAND串相关联的位线施加更高的电压来降低Vgs。当编程进行时，Vgs可以通过对公共源极线施加更高的电压来降低。

2. 发明申请

WO2013169509A1 CHANNEL BOOSTING USING SECONDARY NEIGHBOR CHANNEL COUPLING IN NON-VOLATILE MEMORY 审中-公开
标题翻译：在非易失性存储器中使用二次邻域信道耦合的信道增强
公开(公告)号：WO2013169509A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/038596
申请日：2013-04-29
申请人： SANDISK TECHNOLOGIES, INC. , DUTTA, Deepanshu , SATO, Shinji , YANO, Fumiko
发明人： DUTTA, Deepanshu , SATO, Shinji , YANO, Fumiko
IPC分类号： G11C11/56 , G11C16/10 , G11C16/34
CPC分类号： G11C16/3418 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427
摘要： In a non-volatile storage system, a programming portion of a program-verify iteration has multiple programming pulses, and storage elements along a word line are selected for programming according to a pattern. Unselected storage elements are grouped to benefit from channel-to-channel capacitive coupling from both primary and secondary neighbor storage elements. The coupling is helpful to boost channel regions of the unselected storage elements to a higher channel potential to prevent program disturb. Each selected storage element has a different relative position within its set. For example, during a first programming pulse, first, second and third storage elements are selected in first, second and third sets, respectively. During a second programming pulse, second, third and first storage elements are selected in the first, second and third sets, respectively. During a third programming pulse, third, first and second storage elements are selected in the first, second and third sets, respectively.
摘要翻译：在非易失性存储系统中，程序验证迭代的编程部分具有多个编程脉冲，并且根据模式选择沿字线的存储元件进行编程。未选择的存储元件被分组以从主要和次要邻居存储元件的通道到通道的电容耦合受益。耦合有助于将未选择的存储元件的通道区域升高到更高的通道电位，以防止程序干扰。每个选定的存储元件在其集合内具有不同的相对位置。例如，在第一编程脉冲期间，分别在第一，第二和第三组中选择第一，第二和第三存储元件。在第二编程脉冲期间，分别在第一，第二和第三组中选择第二，第三和第一存储元件。在第三编程脉冲期间，分别在第一，第二和第三组中选择第三，第一和第二存储元件。

3. 发明申请

WO2011103013A1 NON-VOLATILE STORAGE WITH TEMPERATURE COMPENSATION BASED ON NEIGHBOR STATE INFORMATION 审中-公开
标题翻译：基于邻国状态信息的温度补偿非挥发性储存
公开(公告)号：WO2011103013A1
公开(公告)日：2011-08-25
申请号：PCT/US2011/024287
申请日：2011-02-10
申请人： SANDISK CORPORATION , HEMINK, Gerrit, Jan , SATO, Shinji
发明人： HEMINK, Gerrit, Jan , SATO, Shinji
IPC分类号： G11C11/56
CPC分类号： G11C16/26 , G11C7/04 , G11C11/5642
摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.
摘要翻译：数据被编程到一组目标存储器单元中并从其读取。读取数据时，提供温度补偿。温度补偿基于温度信息和一个或多个相邻存储单元的状态。在一个实施例中，当从目标存储器单元的集合读取数据时，系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。如果温度差大于阈值，则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。在一个替代方案中，提供温度补偿的决定可以由温差以外的条件触发。

4. 发明申请

WO2010076894A1 EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：曝光装置，曝光方法和装置制造方法
公开(公告)号：WO2010076894A1
公开(公告)日：2010-07-08
申请号：PCT/JP2009/071914
申请日：2009-12-25
申请人： NIKON CORPORATION , SATO Shinji
发明人： SATO Shinji
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70916
摘要： An exposure apparatus that exposes a substrate includes: an optical system (PL) that includes an emission surface (23) from which an exposure light (EL) is emitted; a first surface (41) that is disposed in at least a part of a surrounding of an optical path of the exposure light emitted from the emission surface; a second surface (42) that is disposed in at least a part of a surrounding of the first surface and at a position lower than the first surface; a space portion (80) into which a liquid (LQ) can flow via a first aperture (33) between the first surface and the second surface and which is opened to the atmosphere via a second aperture (34) different from the first aperture; and a first recovery portion (60) that recovers at least a part of the liquid flowing into the space portion. Here, the emission surface, the first surface, and the second surface are opposed to the surface of the substrate (P) in at least a part of the exposure of the substrate, and the substrate is exposed with the exposure light from the emission surface via the liquid between the emission surface and the surface of the substrate.
摘要翻译：曝光基板的曝光装置包括：包括发射曝光光（EL）的发射面（23）的光学系统（PL）第一表面（41），设置在从所述发射表面发射的所述曝光光的光路的周围的至少一部分中; 第二表面（42），其设置在所述第一表面的周围的至少一部分中并且位于比所述第一表面低的位置; 空间部分（80），液体（LQ）可经由第一孔和第二表面之间的第一孔（33）流动，并且经由第二孔与第一孔不同的方式向大气打开; 以及回收至少部分流入空间部分的液体的第一回收部分（60）。这里，发射表面，第一表面和第二表面在基板的至少一部分曝光中与基板（P）的表面相对，并且基板用来自发射表面的曝光光通过发射表面和衬底表面之间的液体。

5. 发明申请

WO2006036453A2 NON-VOLATILE MEMORY WITH ASYMMETRICAL DOPING PROFILE 审中-公开
标题翻译：非挥发性介质的非挥发性记忆
公开(公告)号：WO2006036453A2
公开(公告)日：2006-04-06
申请号：PCT/US2005031279
申请日：2005-08-26
申请人： SANDISK CORP , HEMINK GERRIT JAN , SATO SHINJI
发明人： HEMINK GERRIT JAN , SATO SHINJI
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/336 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11521 , G11C16/0483 , G11C16/10 , H01L27/115 , H01L27/11524 , H01L29/66825 , H01L29/7885
摘要： Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantation's are performed at a 5-second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.
摘要翻译：在衬底上产生用于NAND串的堆叠栅极结构。以与堆叠的栅极结构之间的区域的第一注入角度进行源植入。排水注入以与堆叠的栅极结构之间的区域以5秒的注入角度进行。漏极注入在堆叠栅极结构的漏极侧的衬底中产生第一导电类型的较低掺杂区域。源极注入在层叠栅极结构的源极侧的衬底中产生第一导电类型的较高掺杂区域。

6. 发明申请

WO1993011785A1 STABILIZED PARATHYROID HORMONE COMPOSITION 审中-公开
标题翻译：稳定的PARATHYROID HORMONE组合物
公开(公告)号：WO1993011785A1
公开(公告)日：1993-06-24
申请号：PCT/JP1992001599
申请日：1992-12-08
申请人： ASAHI KASEI KOGYO KABUSHIKI KAISHA , ENDO, Ken , SATO, Shinji , SUGIYAMA, Yoshinori , OHNO, Masaru , SAKAKIBARA, Hideo
发明人： ASAHI KASEI KOGYO KABUSHIKI KAISHA
IPC分类号： A61K37/24
CPC分类号： A61K9/0019 , A61K9/19 , A61K38/29 , A61K47/02 , A61K47/26 , Y10S514/97
摘要： A highly safe, stabilized lyophilized preparation of a parathyroid hormone (PTH) containing PTH as the active ingredient and effective amounts of a sugar and sodium chloride as the stabilizers for PTH.
摘要翻译：一种高度安全，稳定的含有PTH作为活性成分的甲状旁腺激素（PTH）的冻干制剂，有效量的糖和氯化钠作为PTH的稳定剂。

7. 发明申请

WO2013096564A1 NON-VOLATILE STORAGE SYSTEM WITH THREE LAYER FLOATING GATE 审中-公开
标题翻译：具有三层浮动门的非挥发性储存系统
公开(公告)号：WO2013096564A1
公开(公告)日：2013-06-27
申请号：PCT/US2012/070833
申请日：2012-12-20
申请人： SANDISK TECHNOLOGIES, INC. , DUTTA, Deepanshu , SATO, Shinji , HIGAHSITANI, Masaaki , ZHAO, Dengtao , LEE, Sanghyun
发明人： DUTTA, Deepanshu , SATO, Shinji , HIGAHSITANI, Masaaki , ZHAO, Dengtao , LEE, Sanghyun
IPC分类号： H01L21/28 , H01L29/788 , G11C16/04 , H01L29/423 , H01L29/66 , H01L27/115
CPC分类号： G11C16/10 , G11C16/0483 , H01L21/28273 , H01L27/11524 , H01L29/66825 , H01L29/788 , H01L29/7887
摘要： A non-volatile storage system includes memory cells with floating gates (104FG) that comprises three layers separated by two dielectric layers, an upper dielectric layer (UDL) and a lower dielectric layer (LDL). The dielectric layers may be oxide layers, nitride layers, combinations of oxide and nitride, or some other suitable dielectric material. The lower dielectric layer is close to the bottom of the floating gate, near the interface between floating gate and tunnel dielectric (TD), while the upper dielectric layer is close to top of the floating gate, near the interface between floating gate and inter-gate dielectric (IGD).
摘要翻译：非易失性存储系统包括具有浮动栅极（104FG）的存储单元，其包括由两个电介质层分离的三层，上介电层（UDL）和下介电层（LDL）。电介质层可以是氧化物层，氮化物层，氧化物和氮化物的组合，或一些其它合适的电介质材料。下电介质层靠近浮动栅极的底部，靠近浮动栅极和隧道电介质（TD）之间的界面，而上部介电层靠近浮动栅极的顶部，靠近浮动栅极和沟道间介质之间的界面，栅极电介质（IGD）。

8. 发明申请

WO2012008606A1 LIQUID IMMERSION MEMBER AND IMMERSION EXPOSURE APPARATUS 审中-公开
标题翻译：液体浸没会员和浸入式曝光装置
公开(公告)号：WO2012008606A1
公开(公告)日：2012-01-19
申请号：PCT/JP2011/066510
申请日：2011-07-13
申请人： NIKON CORPORATION , SATO Shinji
发明人： SATO Shinji
IPC分类号： G03F7/20
CPC分类号： G03F7/709 , G03F7/70341
摘要： A liquid immersion member (3) is disposed inside an immersion exposure apparatus (FX) and at least partly around an optical member (8) and around an optical path (K) of exposure light that passes through a liquid (LQ) between the optical member and an objectn (P). The liquid immersion member comprises: a first member (28), which has a first surface (28A), a second surface (28B) that faces a direction other than that faced by the first surface, and a plurality of holes (28H) that connects the first surface and the second surface, that recovers at least some of the liquid from the space above the object opposing the first surface via the holes; a recovery passageway (19), wherethrough the liquid recovered via the holes of the first member flows; and a discharge part (20), which separately discharges a liquid and a gas from the recovery passageway. The first member comprises a first portion (281) and a second portion (282). The second portion hinders a gas flowing from a space between the object and the first surface into the recovery passageway via the holes more than the first portion does.
摘要翻译：液浸构件（3）设置在浸没曝光装置（FX）内部，并且至少部分地围绕光学构件（8）并且围绕通过光学（LQ）之间的液体（LQ）的曝光光的光路（K）成员和对象（P）。液浸部件包括：具有第一表面（28A）的第一部件（28），面向与第一表面相对的方向的第二表面（28B），以及多个孔（28H），其中，连接所述第一表面和所述第二表面，所述第一表面和所述第二表面通过所述孔从所述物体上方与所述第一表面相对的空间中回收至少一些液体; 回收通道（19），通过第一部件的孔回收的液体流过; 和排出部（20），其分别从回收通道排出液体和气体。第一构件包括第一部分（281）和第二部分（282）。第二部分阻止气体从物体和第一表面之间的空间经由多于第一部分的孔流入回收通道。

9. 发明申请

WO2012008605A1 LIQUID IMMERSION MEMBER AND IMMERSION EXPOSURE APPARATUS 审中-公开
标题翻译：液体浸没会员和浸入式曝光装置
公开(公告)号：WO2012008605A1
公开(公告)日：2012-01-19
申请号：PCT/JP2011/066509
申请日：2011-07-13
申请人： NIKON CORPORATION , SATO Shinji
发明人： SATO Shinji
IPC分类号： G03F7/20
CPC分类号： G03F7/709 , G03F7/70341
摘要： A liquid immersion member (3) is disposed inside an immersion exposure apparatus (EX) and at least partly around an optical member (8) and an optical path (K) of exposure light that passes through a liquid (LQ) between the optical member and an object (P). The liquid immersion member comprises: a first member (28), which has a recovery port (18) that recovers at least some of the liquid from the space above the object; a recovery passageway (19), wherethrough the liquid recovered via the recovery port flows; a discharge part (20), which has a first discharge port (21) for discharging the liquid from the recovery passageway and a second discharge port (22) for discharging a gas from the recovery passageway, that separately discharges the liquid and the gas from the recovery passageway; and a hindering part (40), which hinders the liquid in the recovery passageway from contacting the second discharge port.
摘要翻译：浸液构件（3）设置在浸没曝光装置（EX）的内部，并且至少部分地围绕光学构件（8）和通过光学构件（8）之间的液体（LQ）的曝光光的光路（K）和对象（P）。液浸部件包括：第一部件（28），其具有从物体上方的空间中回收至少一些液体的回收口（18）回收通道（19），通过回收口回收的液体流过; 排出部分（20），其具有用于从回收通道排出液体的第一排出口（21）和用于从回收通道排出气体的第二排出口（22），分别排出液体和气体恢复通道; 以及妨碍回收通道中的液体接触第二排出口的阻碍部分（40）。

10. 发明申请

WO2011111878A1 LIQUID IMMERSION MEMBER AND EXPOSURE APPARATUS 审中-公开
标题翻译：液体浸没会员和接触装置
公开(公告)号：WO2011111878A1
公开(公告)日：2011-09-15
申请号：PCT/JP2011/056513
申请日：2011-03-14
申请人： NIKON CORPORATION , SATO Shinji
发明人： SATO Shinji
IPC分类号： G03F7/20
CPC分类号： G03F7/70341
摘要： A liquid immersion member (3) can form an immersion space (LS) such that an optical path (K) of exposure light (EL) is filled with a liquid (LQ). The liquid immersion member comprises: a recovery port (18), which recovers at least some of the liquid on an object (P) disposed such that it faces an emergent surface (7) wherefrom the exposure light emerges; a recovery passageway (19), wherein flows the liquid recovered via the recovery port; a first suction port (21), which faces the recovery passageway and suctions only a gas from the recovery passageway; and a second suction port (22), which faces the recovery passageway and suctions the liquid from the recovery passageway.
摘要翻译：液浸构件（3）可以形成浸没空间（LS），使得曝光光（EL）的光路（K）填充有液体（LQ）。液浸部件包括：回收口（18），其回收物体（P）上的至少一些液体，所述物体被设置为使得其面对从曝光光出射的出射表面（7）; 回收通道（19），其中流经经由回收口回收的液体; 第一吸入口（21），其面向回收通道并仅吸收来自回收通道的气体; 以及第二吸入口（22），其面向回收通道并吸收来自回收通道的液体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式