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1. 发明授权

US08728935B2 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的处理方法及基板处理装置
公开(公告)号：US08728935B2
公开(公告)日：2014-05-20
申请号：US12974884
申请日：2010-12-21
申请人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
发明人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/45525 , H01L21/28088 , H01L21/76834 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
摘要翻译：提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c）自由的气氛。

2. 发明授权

US08435905B2 Manufacturing method of semiconductor device, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US08435905B2
公开(公告)日：2013-05-07
申请号：US11921936
申请日：2006-06-13
申请人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
发明人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45542 , H01L21/28562 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.
摘要翻译：本发明提供一种具有快速成膜速度和高生产率的半导体器件的制造方法，并提供一种衬底处理设备。该方法包括将基板装载到处理室中的步骤; 在基板上形成具有期望厚度的薄膜，其中，将作为一个循环的步骤设置在处理室中的吸附辅助气体，用于辅助从液体源蒸发的源气体吸附在基板上，并使该吸附辅助气体吸附在基板上，将源气体供给到处理室中，使源气体与基板上的吸附辅助气体反应并使该源气体吸附在基板上的工序，使反应气体进入处理室，使该反应气体与吸附在基板上的原料气反应，并重复该循环多次; 以及从处理室的内部卸载设置有薄膜的基板。

3. 发明申请

US20090035947A1 Manufacturing Method of Semiconductor Device, and Substrate Processing Apparatus 有权
标题翻译：半导体器件的制造方法和衬底处理设备
公开(公告)号：US20090035947A1
公开(公告)日：2009-02-05
申请号：US11921936
申请日：2006-06-13
申请人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
发明人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/31 , C23C16/52
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45542 , H01L21/28562 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.
摘要翻译：本发明提供一种具有快速成膜速度和高生产率的半导体器件的制造方法，并提供一种衬底处理设备。该方法包括将基板装载到处理室中的步骤; 在基板上形成具有期望厚度的薄膜，其中，将作为一个循环的步骤设置在处理室中的吸附辅助气体，用于辅助从液体源蒸发的源气体吸附到基板上，并使该吸附辅助气体吸附在基板上，将源气体供给到处理室中，使源气体与基板上的吸附辅助气体反应并使该源气体吸附在基板上的工序，使反应气体进入处理室，使该反应气体与吸附在基板上的原料气反应，并重复该循环多次; 以及从处理室的内部卸载设置有薄膜的基板。

4. 发明授权

US08404603B2 Method of manufacturing semiconductor device and substrate processing system 有权
标题翻译：制造半导体器件和衬底处理系统的方法
公开(公告)号：US08404603B2
公开(公告)日：2013-03-26
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
IPC分类号： H01L21/31
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

5. 发明申请

US20070264840A1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device 有权
标题翻译：基板处理装置及制造半导体装置的方法
公开(公告)号：US20070264840A1
公开(公告)日：2007-11-15
申请号：US11663179
申请日：2005-10-14
申请人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
发明人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
IPC分类号： H01L21/00 , B05C13/00
CPC分类号： C23C16/4412
摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
摘要翻译：为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分被提供以被提升和降低。

6. 发明授权

US07524766B2 Method for manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US07524766B2
公开(公告)日：2009-04-28
申请号：US10521248
申请日：2003-07-15
申请人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
发明人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/45542 , C23C16/0272 , H01L28/55 , H01L28/60 , H01L28/90
摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.
摘要翻译：以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。通过初始成膜步骤的一个步骤可以获得所需的厚度。然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体不使用热CVD法等离子体激发。

7. 发明申请

US20080032514A1 Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus 有权
标题翻译：半导体器件制造方法及基板处理装置
公开(公告)号：US20080032514A1
公开(公告)日：2008-02-07
申请号：US11791222
申请日：2005-11-29
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/02148 , C23C16/401 , C23C16/45523 , H01L21/0228 , H01L21/31604
摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
摘要翻译：提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

8. 发明申请

US20070042581A1 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20070042581A1
公开(公告)日：2007-02-22
申请号：US10574571
申请日：2005-01-21
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
IPC分类号： H01L21/24
CPC分类号： H01L21/02148 , C23C16/34 , C23C16/45529 , C23C16/45531 , H01L21/02271 , H01L21/02337 , H01L21/31645 , H01L21/3185
摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
摘要翻译：提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二形成薄膜步骤的阶段。

9. 发明申请

US20050250341A1 Method for manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US20050250341A1
公开(公告)日：2005-11-10
申请号：US10521248
申请日：2003-07-15
申请人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
发明人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45542 , C23C16/0272 , H01L28/55 , H01L28/60 , H01L28/90
摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.
摘要翻译：以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。通过初始成膜步骤的一个步骤可以获得所需的厚度。然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体不使用热CVD法等离子体激发。

10. 发明申请

US20110003482A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：制造半导体器件和衬底加工系统的方法
公开(公告)号：US20110003482A1
公开(公告)日：2011-01-06
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
IPC分类号： H01L21/314 , B05C11/10
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

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