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1. 发明申请

WO2010114250A3 LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有发光细胞的多重性的发光装置及其制造方法
公开(公告)号：WO2010114250A3
公开(公告)日：2010-11-25
申请号：PCT/KR2010001804
申请日：2010-03-24
申请人： SEOUL SEMICONDUCTOR CO LTD , SEO WON CHEOL , KAL DAE SUNG , LEE JOON HEE , KIM CHANG YOUN
发明人： SEO WON CHEOL , KAL DAE SUNG , LEE JOON HEE , KIM CHANG YOUN
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/73265 , H01L2224/92247 , H01L2933/0016
摘要： A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
摘要翻译：公开了一种具有多个发光单元的发光器件。发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开，每个所述发光单元包括p型下半导体层，有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开，各个p电极电连接到相应的下半导体层，每个p电极具有延伸到相邻的一个发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线，电线通过侧绝缘层与发光单元的侧面间隔开。

2. 发明申请

WO2009084857A3 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2009084857A3
公开(公告)日：2009-10-08
申请号：PCT/KR2008007658
申请日：2008-12-24
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
发明人： SEO WON CHEOL , KIM CHANG YOUN , YOON YEO JIN
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L2224/73265
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers includes an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。在牺牲基板上生长半导体层，并且支撑基板与牺牲基板均匀。

3. 发明申请

WO2011162479A2 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2011162479A2
公开(公告)日：2011-12-29
申请号：PCT/KR2011003269
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO LTD , KIM CHANG YOUN , LEE JOON HEE , YOU JONG KYUN , LIM HONG CHOL , KIM HWA MOK
发明人： KIM CHANG YOUN , LEE JOON HEE , YOU JONG KYUN , LIM HONG CHOL , KIM HWA MOK
IPC分类号： H01L33/10 , H01L33/22 , H01L33/46
CPC分类号： H01L33/10 , H01L33/025 , H01L2933/0091
摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
摘要翻译：本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述衬底布置在所述DBR和所述第三氮化物半导体层之间。

4. 发明申请

WO2012091311A3 HIGH EFFICIENCY LIGHT EMITTING DIODE 审中-公开
标题翻译：高效率发光二极管
公开(公告)号：WO2012091311A3
公开(公告)日：2012-09-27
申请号：PCT/KR2011009389
申请日：2011-12-06
申请人： SEOUL OPTO DEVICE CO LTD , YUN JUN HO , NAM KI BUM , LEE JOON HEE , KIM CHANG YOUN , YOO HONG JAE , HONG SUNG HOON
发明人： YUN JUN HO , NAM KI BUM , LEE JOON HEE , KIM CHANG YOUN , YOO HONG JAE , HONG SUNG HOON
IPC分类号： H01L33/36 , H01L33/44
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7X 1018/cm3 and a thickness in the range of 5 to 10 um.
摘要翻译：这里公开了一种高效率的发光二极管。该发光二极管包括：定位在支撑衬底上的半导体叠层; 位于所述支撑衬底和所述半导体堆叠之间以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体堆叠的凹槽的反射金属层; 位于所述半导体堆叠的n型化合物半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并且定位在所述沟槽区上的电极延伸部; 以及介于第一电极焊盘和半导体堆叠之间的上绝缘层。此外，n型化合物半导体层包括n型接触层，并且n型接触层具有5至7×1018 / cm3的Si掺杂浓度和5至10μm范围内的厚度。

5. 发明申请

WO2011025149A3 METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于制造半导体基板的方法和用于制造发光器件的方法
公开(公告)号：WO2011025149A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004816
申请日：2010-07-22
申请人： SEOUL OPTO DEVICE CO LTD , KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
发明人： KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
IPC分类号： H01L33/02 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： Disclosed are a method for manufacturing a semiconductor substrate and a method for manufacturing a light-emitting device. According to one embodiment of the present invention, in a method for manufacturing a semiconductor substrate, a first semiconductor layer is formed on a substrate, a metal material layer is formed as a pattern on the first semiconductor layer, a second semiconductor layer is formed on the first semiconductor layer and the metal material layer, together with a cavity that is formed in the first semiconductor layer at a portion lower than the metal material layer, and the cavity is used to remove the substrate from the second semiconductor layer. Accordingly, there is no need to use a laser to remove a grown substrate, such that the cost of manufacturing substrates can be reduced.
摘要翻译：公开了一种半导体衬底的制造方法和发光器件的制造方法。根据本发明的一个实施例，在半导体衬底的制造方法中，在衬底上形成第一半导体层，在第一半导体层上形成作为图案的金属材料层，第二半导体层形成在第一半导体层和金属材料层与在第一半导体层中形成在低于金属材料层的部分处的空腔和空腔一起用于从第二半导体层去除衬底。因此，不需要使用激光去除生长的基板，从而可以降低制造基板的成本。

6. 发明申请

WO2011126248A3 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2011126248A3
公开(公告)日：2012-03-08
申请号：PCT/KR2011002327
申请日：2011-04-04
申请人： SEOUL OPTO DEVICE CO LTD , LEE SUM GEUN , SHIN JIN CHEOL , KIM JONG KYU , KIM CHANG YOUN
发明人： LEE SUM GEUN , SHIN JIN CHEOL , KIM JONG KYU , KIM CHANG YOUN
IPC分类号： H01L33/46 , H01L33/22
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译：本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和连接器。连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

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