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1. 发明申请

WO2011025149A3 METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于制造半导体基板的方法和用于制造发光器件的方法
公开(公告)号：WO2011025149A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004816
申请日：2010-07-22
申请人： SEOUL OPTO DEVICE CO LTD , KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
发明人： KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
IPC分类号： H01L33/02 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： Disclosed are a method for manufacturing a semiconductor substrate and a method for manufacturing a light-emitting device. According to one embodiment of the present invention, in a method for manufacturing a semiconductor substrate, a first semiconductor layer is formed on a substrate, a metal material layer is formed as a pattern on the first semiconductor layer, a second semiconductor layer is formed on the first semiconductor layer and the metal material layer, together with a cavity that is formed in the first semiconductor layer at a portion lower than the metal material layer, and the cavity is used to remove the substrate from the second semiconductor layer. Accordingly, there is no need to use a laser to remove a grown substrate, such that the cost of manufacturing substrates can be reduced.
摘要翻译：公开了一种半导体衬底的制造方法和发光器件的制造方法。根据本发明的一个实施例，在半导体衬底的制造方法中，在衬底上形成第一半导体层，在第一半导体层上形成作为图案的金属材料层，第二半导体层形成在第一半导体层和金属材料层与在第一半导体层中形成在低于金属材料层的部分处的空腔和空腔一起用于从第二半导体层去除衬底。因此，不需要使用激光去除生长的基板，从而可以降低制造基板的成本。

2. 发明申请

WO2008143428A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：WO2008143428A1
公开(公告)日：2008-11-27
申请号：PCT/KR2008002726
申请日：2008-05-16
申请人： SEOUL OPTO DEVICE CO LTD , UNIV TOKUSHIMA , SAKAI SHIRO , NAOI YOSHIKI
发明人： SAKAI SHIRO , NAOI YOSHIKI
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/44
摘要： The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.
摘要翻译：本发明提供一种制造发光二极管的方法，其包括以下步骤：在衬底上形成化合物半导体层，所述化合物半导体层包括下半导体层，有源层和上半导体层; 以及通过用研磨剂摩擦基材来刮擦基材的表面。根据本发明，研磨剂用于擦拭和划伤发光二极管的表面，从而使得可以使从有源层发射的光有效地离开到外部。因此，可以提高发光二极管的光提取效率。

3. 发明申请

WO2011099772A2 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF 审中-公开
标题翻译：半导体衬底，半导体器件及其制造方法
公开(公告)号：WO2011099772A2
公开(公告)日：2011-08-18
申请号：PCT/KR2011000871
申请日：2011-02-09
申请人： SEOUL OPTO DEVICE CO LTD , SAKAI SHIRO
发明人： SAKAI SHIRO
IPC分类号： H01L33/02 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/0079 , H01L33/32
摘要： Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.
摘要翻译：本发明的示例性实施例提供了一种制造半导体衬底的方法，该方法包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层上形成第二半导体层，使用溶液蚀刻衬底以去除金属材料层和部分第一半导体层，并且在去除金属材料层的位置处的第一半导体层中形成空腔。

4. 发明申请

WO2010143895A3 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法
公开(公告)号：WO2010143895A3
公开(公告)日：2011-03-24
申请号：PCT/KR2010003724
申请日：2010-06-10
申请人： SEOUL OPTO DEVICE CO LTD , SAKAI SHIRO
发明人： SAKAI SHIRO
IPC分类号： H01L33/12 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16
摘要： The present invention provides a method of manufacturing a semiconductor substrate that includes a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity formed in the first semiconductor layer under the metallic material layer.
摘要翻译：本发明提供一种制造半导体衬底的方法，该半导体衬底包括衬底，布置在衬底上的第一半导体层，布置在第一半导体层上的金属材料层，布置在第一半导体层上的第二半导体层和金属材料层和形成在第一半导体层的金属材料层下方的空腔。

5. 发明公开

KR20120088613A Semiconductor substrate, semiconductor device, and manufacturing methods thereof 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法
公开(公告)号：KR20120088613A
公开(公告)日：2012-08-08
申请号：KR20120051939
申请日：2012-05-16
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SAKAI SHIRO
IPC分类号： H01L33/22 , H01L33/02 , H01L33/12 , H01L33/20
CPC分类号： H01L33/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/0075 , H01L33/20 , H01L2933/0008
摘要： PURPOSE: A semiconductor substrate, a semiconductor device and a manufacturing method thereof are provided to increase lifetime of a laser diode by forming the laser diode on a GaN layer with enhanced heat conductivity. CONSTITUTION: A first GaN layer(102) is formed on a sapphire substrate(101). A Ta layer(103) is formed on the first GaN layer. A second GaN layer(104) is formed on the first GaN layer. A plurality of cavities(102a) is formed by etching the first GaN layer. A plurality of holes(103a) is formed by etching the Ta layer.
摘要翻译：目的：提供半导体衬底，半导体器件及其制造方法，以通过在具有增强的导热性的GaN层上形成激光二极管来增加激光二极管的寿命。构成：在蓝宝石衬底（101）上形成第一GaN层（102）。在第一GaN层上形成Ta层（103）。在第一GaN层上形成第二GaN层（104）。通过蚀刻第一GaN层形成多个空腔（102a）。通过蚀刻Ta层形成多个孔（103a）。

6. 发明公开

KR20100132910A Semiconductor substrate, semiconductor device, and manufacturing methods thereof 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法
公开(公告)号：KR20100132910A
公开(公告)日：2010-12-20
申请号：KR20100051176
申请日：2010-05-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SAKAI SHIRO
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L21/02389 , H01L21/02392 , H01L21/0254 , H01L21/02543
摘要： PURPOSE: A semiconductor substrate, a semiconductor device, and a manufacturing methods thereof are provided to reduce manufacturing costs for an LED and a laser diode by using a GaN substrate. CONSTITUTION: A first semiconductor layer is formed on a substrate. A metallic material layer is formed on a semiconductor layer by a predetermined pattern. A second semiconductor layer is formed on the semiconductor layer and metallic material layer. A hollow(102a) is formed on a first semiconductor layer under the metallic material layer.
摘要翻译：目的：提供半导体衬底，半导体器件及其制造方法，以通过使用GaN衬底来降低LED和激光二极管的制造成本。构成：在基板上形成第一半导体层。通过预定图案在半导体层上形成金属材料层。在半导体层和金属材料层上形成第二半导体层。在金属材料层下的第一半导体层上形成中空（102a）。

7. 发明公开

KR20120057600A Semiconductor substrate, semiconductor device, and manufacturing methods thereof 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法
公开(公告)号：KR20120057600A
公开(公告)日：2012-06-05
申请号：KR20120051938
申请日：2012-05-16
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SAKAI SHIRO
IPC分类号： H01L33/22 , H01L33/12 , H01L33/20
摘要： PURPOSE: A semiconductor substrate, a semiconductor device, and a method for manufacturing thereof are provided to improve heat radiation characteristics by forming a laser diode by using a GaN substrate. CONSTITUTION: A first GaN layer(102) is formed on a sapphire substrate(101). A Ta layer(103) is formed on the first GaN layer by using EB(Electron Beam) evaporation and lift off. A second GaN layer(104) is formed on the first GaN layer and Ta layer through an MOCVD(Metalorganic Chemical Vapor Deposition) method. A plurality of cavities(102a) is formed within the first GaN layer. A hole(103a) is formed on the Ta layer while forming the second GaN layer. A semiconductor substrate is complete after the second GaN layer is formed.
摘要翻译：目的：提供半导体衬底，半导体器件及其制造方法，以通过使用GaN衬底形成激光二极管来改善散热特性。构成：在蓝宝石衬底（101）上形成第一GaN层（102）。通过使用EB（电子束）蒸发和剥离在第一GaN层上形成Ta层（103）。通过MOCVD（金属有机化学气相沉积）方法在第一GaN层和Ta层上形成第二GaN层（104）。在第一GaN层内形成多个空腔（102a）。在形成第二GaN层的同时，在Ta层上形成孔（103a）。在形成第二GaN层之后，半导体衬底完成。

8. 发明公开

EP2149162A4 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 失效转让
标题翻译：发光二极管与制造VEFAHREN
公开(公告)号：EP2149162A4
公开(公告)日：2012-06-13
申请号：EP08753522
申请日：2008-05-16
申请人： SEOUL OPTO DEVICE CO LTD , UNIV TOKUSHIMA
发明人： SAKAI SHIRO , NAOI YOSHIKI
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/44

9. 发明公开

EP2441097A4 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF 审中-公开
标题翻译：半导体衬底，半导体元件及其制造方法
公开(公告)号：EP2441097A4
公开(公告)日：2014-03-05
申请号：EP10786378
申请日：2010-06-10
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SAKAI SHIRO
IPC分类号： H01L33/12 , H01L21/02 , H01L33/00 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16

10. 发明专利

DE60216857T2 未知
公开(公告)号：DE60216857T2
公开(公告)日：2007-10-18
申请号：DE60216857
申请日：2002-03-25
申请人： NITRIDE SEMICONDUCTORS CO LTD , SAKAI SHIRO
发明人： SAKAI SHIRO , LACROIX YVES
IPC分类号： H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L29/20 , H01L29/45 , H01S5/323 , H01S5/343
摘要： A method for manufacturing a GaN-based semiconductor device in which an ohmic contact can be provided between the semiconductor layer and the electrode material. In a method for manufacturing wherein an n-GaN layer, an emissive layer, a p-GaN layer are formed on a substrate in that order; etching is performed to expose a portion of the n-GaN layer; and a negative electrode is formed on the n-GaN layer, the etching is performed in two sub-steps, an etching step using BCl3 gas and an etching step using Cl2 gas. The surface of the n-GaN layer is exposed in the first sub-step and the B (boron) contamination layer is removed in the second sub-step.

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