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1. 发明申请

WO2012091311A3 HIGH EFFICIENCY LIGHT EMITTING DIODE 审中-公开
标题翻译：高效率发光二极管
公开(公告)号：WO2012091311A3
公开(公告)日：2012-09-27
申请号：PCT/KR2011009389
申请日：2011-12-06
申请人： SEOUL OPTO DEVICE CO LTD , YUN JUN HO , NAM KI BUM , LEE JOON HEE , KIM CHANG YOUN , YOO HONG JAE , HONG SUNG HOON
发明人： YUN JUN HO , NAM KI BUM , LEE JOON HEE , KIM CHANG YOUN , YOO HONG JAE , HONG SUNG HOON
IPC分类号： H01L33/36 , H01L33/44
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
摘要： Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7X 1018/cm3 and a thickness in the range of 5 to 10 um.
摘要翻译：这里公开了一种高效率的发光二极管。该发光二极管包括：定位在支撑衬底上的半导体叠层; 位于所述支撑衬底和所述半导体堆叠之间以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体堆叠的凹槽的反射金属层; 位于所述半导体堆叠的n型化合物半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并且定位在所述沟槽区上的电极延伸部; 以及介于第一电极焊盘和半导体堆叠之间的上绝缘层。此外，n型化合物半导体层包括n型接触层，并且n型接触层具有5至7×1018 / cm3的Si掺杂浓度和5至10μm范围内的厚度。

2. 发明申请

WO2011025266A2 LIGHT-EMITTING DIODE HAVING AN INTERLAYER WITH A HIGH VOLTAGE DENSITY, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有高压密度中间层的发光二极管及其制造方法
公开(公告)号：WO2011025266A2
公开(公告)日：2011-03-03
申请号：PCT/KR2010005708
申请日：2010-08-25
申请人： SEOUL OPTO DEVICE CO LTD , YOO HONG JAE , YE KYUNG HEE
发明人： YOO HONG JAE , YE KYUNG HEE
IPC分类号： H01L33/12
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： Disclosed is a light-emitting diode having an interlayer with a high voltage density, and a method for manufacturing same. The light-emitting diode comprises: a substrate; a buffer layer formed on the substrate; a gallium nitride-based N-type contact layer disposed on the buffer layer; a gallium nitride-based P-type contact layer disposed on the N-type contact layer; an active layer interposed between the N-type contact layer and the P-type contact layer; a gallium nitride-based first lower semiconductor layer interposed between the buffer layer and the N-type contact layer; and a gallium nitride-based first interlayer interposed between the first lower semiconductor layer and the N-type contact layer, wherein the first interlayer has a voltage density less than the buffer layer and greater than the first lower semiconductor layer. Voltage formed in the first lower semiconductor layer can be prevented from being transferred to the N-type contact layer by means of the first interlayer having a relatively high voltage density.
摘要翻译：公开了具有高电压密度的中间层的发光二极管及其制造方法。发光二极管包括：衬底; 形成在基板上的缓冲层; 设置在缓冲层上的氮化镓基N型接触层; 设置在所述N型接触层上的氮化镓基P型接触层; 介于所述N型接触层与所述P型接触层之间的有源层; 介于缓冲层和N型接触层之间的基于氮化镓的第一下半导体层; 以及介于所述第一下半导体层和所述N型接触层之间的基于氮化镓的第一中间层，其中所述第一中间层的电压密度小于所述缓冲层且大于所述第一下半导体层。借助于具有相对高电压密度的第一中间层，可以防止在第一下半导体层中形成的电压转移到N型接触层。

3. 发明公开

KR20120071572A Light emitting device having active region of multi-quantum well structure 审中-公开
标题翻译：具有多量子结构活动区域的发光装置
公开(公告)号：KR20120071572A
公开(公告)日：2012-07-03
申请号：KR20100133171
申请日：2010-12-23
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOO HONG JAE
IPC分类号： H01L33/04 , H01L33/06
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32
摘要： PURPOSE: A light emitting device having an active region of a multi-quantum well structure is provided to improve a recombination rate of a hole and an electron in an active region by doping a p-type impurity on a final fourth barrier layer which is nearest to a p-type compound semiconductor layer of the active region. CONSTITUTION: An active region has a multiple quantum well structure in which a barrier layer, a well layer(33), and a fourth barrier layer(35) are periodically laminated. The barrier layer includes a first barrier layer(31a), a second barrier layer(31b), and a third barrier layer(31c). The first barrier layer has an energy band gap which can supply an electron to the well layer. The second barrier layer has the energy band gap narrower than that of the first barrier layer. The third barrier layer has the energy band gap wider than that of the second barrier layer. The fourth barrier layer has the energy band gap wider than that of the well layer.
摘要翻译：目的：提供具有多量子阱结构的有源区的发光器件，以通过在最近的第四阻挡层上掺杂p型杂质来提高有源区中的空穴和电子的复合速率涉及有源区的p型化合物半导体层。构成：活性区域具有多个量子阱结构，其中阻挡层，阱层（33）和第四阻挡层（35）周期性层压。阻挡层包括第一阻挡层（31a），第二阻挡层（31b）和第三阻挡层（31c）。第一阻挡层具有能够向阱层提供电子的能带隙。第二阻挡层具有比第一阻挡层窄的能带隙。第三阻挡层具有比第二阻挡层宽的能带隙。第四阻挡层的能带隙比阱层宽。

4. 发明公开

KR20120013577A Light emitting device having active region of multi-quantum well structure 审中-公开
标题翻译：具有多量子结构活动区域的发光装置
公开(公告)号：KR20120013577A
公开(公告)日：2012-02-15
申请号：KR20100075625
申请日：2010-08-05
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YOO HONG JAE , LEE SUNG NAM
IPC分类号： H01L33/06 , H01L33/04
CPC分类号： H01L33/06 , H01L33/0008 , H01L33/08 , H01L33/32 , H01L2924/12041
摘要： PURPOSE: A light emitting device which includes an active region of a multi-quantum well structure is provided to control the thickness and composition of first to fourth barrier layers, thereby improving optical output characteristics by reducing strain applied in a well layer. CONSTITUTION: A low temperature buffer layer(23) and a high temperature buffer layer(25) are arranged on the substrate(21). An n-type compound semiconductor layer(27) is arranged on the high temperature buffer layer. An active region(30) is formed on the n-type compound semiconductor layer. A p-type cladding layer(41) is arranged on the active region. A p-type compound semiconductor layer(43) is arranged on the p-type cladding layer.
摘要翻译：目的：提供一种包括多量子阱结构的有源区的发光器件，以控制第一至第四势垒层的厚度和组成，从而通过减小施加在阱层中的应变来改善光输出特性。构成：在衬底（21）上布置有低温缓冲层（23）和高温缓冲层（25）。在高温缓冲层上配置有n型化合物半导体层（27）。在n型化合物半导体层上形成有源区（30）。在有源区上配置p型覆层（41）。 p型化合物半导体层（43）配置在p型覆层上。

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