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1. 发明申请

WO2011025149A3 METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：用于制造半导体基板的方法和用于制造发光器件的方法
公开(公告)号：WO2011025149A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004816
申请日：2010-07-22
申请人： SEOUL OPTO DEVICE CO LTD , KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
发明人： KIM CHANG YOUN , SAKAI SHIRO , KIM HWA MOK , LEE JOON HEE , MOON SOO YOUNG , KIM KYUNG WAN
IPC分类号： H01L33/02 , H01L33/20
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： Disclosed are a method for manufacturing a semiconductor substrate and a method for manufacturing a light-emitting device. According to one embodiment of the present invention, in a method for manufacturing a semiconductor substrate, a first semiconductor layer is formed on a substrate, a metal material layer is formed as a pattern on the first semiconductor layer, a second semiconductor layer is formed on the first semiconductor layer and the metal material layer, together with a cavity that is formed in the first semiconductor layer at a portion lower than the metal material layer, and the cavity is used to remove the substrate from the second semiconductor layer. Accordingly, there is no need to use a laser to remove a grown substrate, such that the cost of manufacturing substrates can be reduced.
摘要翻译：公开了一种半导体衬底的制造方法和发光器件的制造方法。根据本发明的一个实施例，在半导体衬底的制造方法中，在衬底上形成第一半导体层，在第一半导体层上形成作为图案的金属材料层，第二半导体层形成在第一半导体层和金属材料层与在第一半导体层中形成在低于金属材料层的部分处的空腔和空腔一起用于从第二半导体层去除衬底。因此，不需要使用激光去除生长的基板，从而可以降低制造基板的成本。

2. 发明申请

WO2011162479A2 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2011162479A2
公开(公告)日：2011-12-29
申请号：PCT/KR2011003269
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO LTD , KIM CHANG YOUN , LEE JOON HEE , YOU JONG KYUN , LIM HONG CHOL , KIM HWA MOK
发明人： KIM CHANG YOUN , LEE JOON HEE , YOU JONG KYUN , LIM HONG CHOL , KIM HWA MOK
IPC分类号： H01L33/10 , H01L33/22 , H01L33/46
CPC分类号： H01L33/10 , H01L33/025 , H01L2933/0091
摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
摘要翻译：本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述衬底布置在所述DBR和所述第三氮化物半导体层之间。

3. 发明申请

WO2012070784A3 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2012070784A3
公开(公告)日：2012-07-19
申请号：PCT/KR2011008417
申请日：2011-11-07
申请人： SEOUL OPTO DEVICE CO LTD , KWAK WOO CHUL , AN SOON HO , KIM HWA MOK , KIM EUN JIN , SONG JAE HOON
发明人： KWAK WOO CHUL , AN SOON HO , KIM HWA MOK , KIM EUN JIN , SONG JAE HOON
IPC分类号： H01L33/04 , H01L33/18
CPC分类号： H01L33/08 , B82Y20/00 , B82Y30/00 , H01L33/18 , H01L33/38 , H01L33/502 , H01L2933/0091
摘要： A light emitting device includes a metal backing layer, a reflective electrode layer formed over the metal backing layer, and a plurality of nanorods formed in a matrix arrangement over the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked over the reflective electrode layer. An anti-reflection electrode layer is formed over the nanorods, and quantum dots are disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer over a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer over the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer over the nanorods.
摘要翻译：发光器件包括金属背衬层，形成在金属背衬层上的反射电极层和在反射电极层上形成为矩阵布置的多个纳米棒。每个纳米棒包括依次层叠在反射电极层上的p半导体层，有源层和n半导体层。在纳米棒上形成抗反射电极层，量子点设置在纳米棒之间。该方法包括在衬底上顺序地生长n半导体层，有源层和p半导体层; 通过使用掩模图案蚀刻p半导体层来形成纳米棒; 在p半导体层上依次形成反射电极层和金属背衬层，然后去除衬底; 在纳米棒之间设置量子点; 并在纳米棒上形成抗反射电极层。

4. 发明申请

WO2010021457A2 LIGHT EMITTING DIODE HAVING A MODULATION DOPING LAYER 审中-公开
标题翻译：具有调制层的发光二极管
公开(公告)号：WO2010021457A2
公开(公告)日：2010-02-25
申请号：PCT/KR2009003637
申请日：2009-07-03
申请人： SEOUL OPTO DEVICE CO LTD , KIM HWA MOK
发明人： KIM HWA MOK
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/025 , H01L33/32
摘要： Disclosed is a light emitting diode having a modulation doping layer. The light emitting diode has an n-type contact layer, a p-type contact layer, and an active region of a multi-quantum well structure containing an InGaN well layer. Here, the n-type contact layer includes a first modulation doping layer where n-type impurity doped InGaN layers and undoped InGaN layers are alternately stacked, and a second modulation doping layer where n-type impurity doped InGaN layers and undoped InGaN layers are alternately stacked. In addition, InGaN layers of the first modulation doping layer have the same composition, and InGaN layers of the second modulation doping layer have the same composition. Further, the second modulation doping layer is interposed between the first modulation doping layer and the active region, and an n-electrode contacts the first modulation doping layer. By employing the first modulation doping layer and the second modulation doping layer, a prolongation of the process time can be prevented and stresses in a multi-quantum well structure can be alleviated.
摘要翻译：公开了具有调制掺杂层的发光二极管。发光二极管具有n型接触层，p型接触层和含有InGaN阱层的多量子阱结构的有源区。这里，n型接触层包括交替层叠n型杂质掺杂InGaN层和未掺杂InGaN层的第一调制掺杂层和n型杂质掺杂InGaN层和未掺杂InGaN层交替堆叠的第二调制掺杂层堆叠。此外，第一调制掺杂层的InGaN层具有相同的组成，第二调制掺杂层的InGaN层具有相同的组成。此外，第二调制掺杂层介于第一调制掺杂层和有源区之间，并且n电极接触第一调制掺杂层。通过采用第一调制掺杂层和第二调制掺杂层，可以防止处理时间的延长，并且可以减轻多量子阱结构中的应力。

5. 发明公开

KR20100024154A Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：KR20100024154A
公开(公告)日：2010-03-05
申请号：KR20080082874
申请日：2008-08-25
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM HWA MOK
IPC分类号： H01L33/04 , H01L33/06
摘要： PURPOSE: A light emitting diode is provided to improve emitting efficiency by removing a depletion layer generated from an impurity doping and increasing the area in which carriers are recombined. CONSTITUTION: A light emitting diode includes a n-type contact layer(27) which is a nitride-based n-type semiconductor layer, a p-type semiconductor layer(33) which is a nitride-based p-type semiconductor layer. The light emitting diode includes a substrate(21), an un-doped GaN layer(25) and a nucleus layer(23). A transparent electrode(35) and a p-electrode(37) are arranged on the p-type contact layer. An n-electrode(39) is arranged on the n-type contact layer. The light emitting diode includes the active area(29) of a multiple-quantum-well structure in which a quantum well layer and a barrier layer are stacked by turns.
摘要翻译：目的：提供一种发光二极管，以通过去除由杂质掺杂产生的耗尽层并增加载流子重组的面积来提高发光效率。构成：发光二极管包括作为氮化物系n型半导体层的n型接触层（27），作为氮化物系p型半导体层的p型半导体层（33）。发光二极管包括衬底（21），未掺杂的GaN层（25）和核层（23）。在p型接触层上配置有透明电极（35）和p电极（37）。 n型电极（39）配置在n型接触层上。发光二极管包括多量子阱结构的有源区（29），其中量子阱层和势垒层被轮流堆叠。

6. 发明公开

KR20100084490A Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：KR20100084490A
公开(公告)日：2010-07-26
申请号：KR20100052445
申请日：2010-06-03
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM HWA MOK , KIM DAE WON , KAL DAE SUNG
IPC分类号： H01L33/38 , H01L33/42
CPC分类号： H01L33/10 , H01L33/145 , H01L33/38 , H01L33/42
摘要： PURPOSE: A light emitting diode is provided to improve the current diffusing efficiency of a transparent electrode layer by preventing a current from directly flowing toward a p-type semiconductor layer or a tunnel layer. CONSTITUTION: An n-type semiconductor layer(220), an active layer(240), and a p-type semiconductor layer(260) are formed on a substrate(100). A transparent layer(320) is formed on the p-type semiconductor layer. The transparent layer includes an opening(342) which exposes the p-type semiconductor layer. A current blocking part is formed in the opening. An electrode pad is formed on the current blocking part.
摘要翻译：目的：提供一种发光二极管，用于通过防止电流直接流向p型半导体层或隧道层来提高透明电极层的电流扩散效率。构成：在衬底（100）上形成n型半导体层（220），有源层（240）和p型半导体层（260）。在p型半导体层上形成透明层（320）。透明层包括暴露p型半导体层的开口（342）。在开口中形成电流阻挡部分。在电流阻挡部上形成电极焊盘。

7. 发明公开

KR20120011171A Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：KR20120011171A
公开(公告)日：2012-02-07
申请号：KR20100072821
申请日：2010-07-28
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM HWA MOK
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/14 , H01L2924/12041
摘要： PURPOSE: A light emitting diode is provided to increase optical extraction efficiency by arranging a distributed Bragg reflector layer of a multi-layered structure on a lower surface of a substrate. CONSTITUTION: A first nitride semiconductor layer(25) is placed on an upper part of a substrate(21). An active layer(27) is placed on the upper part of the first nitride semiconductor layer. A second nitride semiconductor layer(31) is placed on the upper part of the active layer. A third nitride semiconductor layer(26) including an insulation pattern is placed between the first nitride semiconductor layer and the active layer. A distributed Bragg reflector(45) of a multi-layered structure is placed on a lower surface of the substrate.
摘要翻译：目的：提供一种发光二极管，以通过在衬底的下表面上布置多层结构的分布布拉格反射器层来提高光学提取效率。构成：将第一氮化物半导体层（25）放置在基板（21）的上部。在第一氮化物半导体层的上部放置有源层（27）。第二氮化物半导体层（31）被放置在有源层的上部。包括绝缘图案的第三氮化物半导体层（26）被放置在第一氮化物半导体层和有源层之间。将多层结构的分布布拉格反射器（45）放置在基板的下表面上。

8. 发明专利

DE112007000059T5 未知
公开(公告)号：DE112007000059T5
公开(公告)日：2008-08-21
申请号：DE112007000059
申请日：2007-06-29
申请人： SEOUL OPTO DEVICE CO LTD
发明人： NAM KI BUM , KIM HWA MOK , SPECK JAMES S
IPC分类号： H01L33/00

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