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1. 发明授权

US08753474B2 Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor 有权
标题翻译：感应耦合等离子体反应器中高效气体解离的方法和装置
公开(公告)号：US08753474B2
公开(公告)日：2014-06-17
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065 , H01J37/32 , C23C16/455 , C23C16/505 , H01L21/67
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

2. 发明申请

US20110073564A1 METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLE PLASMA REACTOR 有权
标题翻译：电感耦合等离子体反应器中高效气体分离的方法与装置
公开(公告)号：US20110073564A1
公开(公告)日：2011-03-31
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

3. 发明申请

US20090272717A1 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：US20090272717A1
公开(公告)日：2009-11-05
申请号：US12407548
申请日：2009-03-19
申请人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
发明人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
IPC分类号： C23F1/00
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

4. 发明授权

US09305810B2 Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery 有权
标题翻译：用于快速气体交换，快速气体切换和可编程气体输送的方法和装置
公开(公告)号：US09305810B2
公开(公告)日：2016-04-05
申请号：US13456006
申请日：2012-04-25
申请人： Saravjeet Singh , Roy C. Nangoy
发明人： Saravjeet Singh , Roy C. Nangoy
IPC分类号： F17D1/00 , H01L21/67
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T137/0318 , Y10T137/87096
摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要翻译：本发明的实施例涉及一种气体输送系统。气体输送系统包括与一个或多个气体板和处理室流体连通的快速气体交换模块。快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的各个流量控制器以提供更长的使用寿命。

5. 发明授权

US08920599B2 High efficiency gas dissociation in inductively coupled plasma reactor with improved uniformity 有权
标题翻译：电感耦合等离子体反应器中高效率的气体离解具有改善的均匀性
公开(公告)号：US08920599B2
公开(公告)日：2014-12-30
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , C23C16/507
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

6. 发明申请

US20130000731A1 METHOD AND APPARATUS FOR FAST GAS EXCHANGE, FAST GAS SWITCHING, AND PROGRAMMABLE GAS DELIVERY 有权
标题翻译：用于快速气体交换，快速气体切换和可编程气体输送的方法和装置
公开(公告)号：US20130000731A1
公开(公告)日：2013-01-03
申请号：US13456006
申请日：2012-04-25
申请人： Saravjeet SINGH , Roy C. Nangoy
发明人： Saravjeet SINGH , Roy C. Nangoy
IPC分类号： F16K11/20
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T137/0318 , Y10T137/87096
摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要翻译：本发明的实施例涉及一种气体输送系统。气体输送系统包括与一个或多个气体板和处理室流体连通的快速气体交换模块。快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的各个流量控制器以提供更长的使用寿命。

7. 发明申请

US20120091098A1 HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVELY COUPLED PLASMA REACTOR WITH IMPROVED UNIFORMITY 有权
标题翻译：具有改进均匀性的电感耦合等离子体反应器中的高效气体分离
公开(公告)号：US20120091098A1
公开(公告)日：2012-04-19
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： C23F1/00 , C23C16/448 , C23C16/513 , C23F1/08
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

8. 发明申请

US20090036036A1 APPARATUS AND METHODS FOR CONDITIONING A POLISHING PAD 审中-公开
标题翻译：用于调节抛光垫的装置和方法
公开(公告)号：US20090036036A1
公开(公告)日：2009-02-05
申请号：US12245759
申请日：2008-10-05
申请人： Roy C. Nangoy , Shou-Sung Chang , Donald J.K. Olgado , Hung Chih Chen , Gerald John Alonzo
发明人： Roy C. Nangoy , Shou-Sung Chang , Donald J.K. Olgado , Hung Chih Chen , Gerald John Alonzo
IPC分类号： B24B53/02
CPC分类号： B24B53/017 , B24B53/005 , B24B53/12
摘要： Apparatus and methods for conditioning a polishing pad are provided. An apparatus includes a base, an arm adapted to support a conditioning disk; and a drive mechanism coupled between the arm and the conditioning disk, wherein the drive mechanism is adapted to directly rotate the conditioning disk relative to the arm. Numerous other aspects are disclosed.
摘要翻译：提供了用于调节抛光垫的装置和方法。一种装置包括底座，适于支撑调节盘的臂; 以及联接在所述臂和所述调节盘之间的驱动机构，其中所述驱动机构适于相对于所述臂直接旋转所述调节盘。公开了许多其他方面。

9. 发明授权

US09196498B1 Stationary actively-cooled shadow ring for heat dissipation in plasma chamber 有权
标题翻译：固定式主动冷却阴影环，用于等离子体室内散热
公开(公告)号：US09196498B1
公开(公告)日：2015-11-24
申请号：US14458021
申请日：2014-08-12
申请人： Roy C. Nangoy
发明人： Roy C. Nangoy
IPC分类号： H01L21/306 , H01L21/3065 , H01J37/32 , H01L21/78 , H01L23/544 , H01L21/67 , H01L21/683 , H01L21/673
CPC分类号： H01L21/6836 , H01J37/32522 , H01J37/32568 , H01J37/32642 , H01J37/32651 , H01J37/32724 , H01J2237/002 , H01J2237/024 , H01J2237/334 , H01L21/3065 , H01L21/3081 , H01L21/31105 , H01L21/31127 , H01L21/32131 , H01L21/67069 , H01L21/67109 , H01L21/67207 , H01L21/673 , H01L21/6831 , H01L21/78 , H01L23/544 , H01L2221/68327 , H01L2221/68377 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma processing apparatus includes a processing chamber having a chamber wall. The plasma processing apparatus also includes a plasma source in an upper portion of the processing chamber. A sample support is included for situating a sample below the plasma source. An actively-cooled shadow ring having a cooling channel therein for cooling fluid transport is fixedly attached to the chamber wall of the processing chamber, between the plasma source and the sample support.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，等离子体处理设备包括具有室壁的处理室。等离子体处理装置还包括在处理室的上部的等离子体源。包括样品支架，用于将样品置于等离子体源下方。其中具有用于冷却流体输送的冷却通道的主动冷却的阴影环在等离子体源和样品支架之间固定地附接到处理室的室壁。

10. 发明授权

US07433759B2 Apparatus and methods for positioning wafers 失效
标题翻译：用于定位晶片的装置和方法
公开(公告)号：US07433759B2
公开(公告)日：2008-10-07
申请号：US10898301
申请日：2004-07-23
申请人： Roy C. Nangoy
发明人： Roy C. Nangoy
IPC分类号： G06F19/00
CPC分类号： H01L21/681
摘要： A method for calibrating a controller of a robotic arm in a microelectronics manufacturing apparatus that includes storing a default position for an edge detector, moving a blade on the robotic arm based on the default position of the edge detector such that at least three edge points on the blade pass through and are detected by the edge detector, generating a plurality of arm position measurements from an arm position sensor by measuring a position with the arm position sensor of the robotic arm at each position of the robotic arm at which an edge point of the blade is detected by the edge detector, and determining at least one of an actual position of the edge detector and an offset for measurements of the arm position sensor based on the plurality of arm position measurements.
摘要翻译：一种用于校准微电子制造装置中的机器人臂的控制器的方法，其包括存储用于边缘检测器的默认位置，基于边缘检测器的默认位置移动机器人臂上的刀片，使得至少三个边缘点在刀片通过并由边缘检测器检测，通过在机器人臂的每个位置处测量与机器人臂的臂位置传感器的位置，从臂位置传感器产生多个臂位置测量，其中边缘点刀片由边缘检测器检测，并且基于多个臂位置测量来确定边缘检测器的实际位置和用于臂位置传感器的测量的偏移中的至少一个。

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