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1. 发明授权

US08753474B2 Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor 有权
标题翻译：感应耦合等离子体反应器中高效气体解离的方法和装置
公开(公告)号：US08753474B2
公开(公告)日：2014-06-17
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065 , H01J37/32 , C23C16/455 , C23C16/505 , H01L21/67
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

2. 发明申请

US20110073564A1 METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLE PLASMA REACTOR 有权
标题翻译：电感耦合等离子体反应器中高效气体分离的方法与装置
公开(公告)号：US20110073564A1
公开(公告)日：2011-03-31
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

3. 发明申请

US20090272717A1 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：US20090272717A1
公开(公告)日：2009-11-05
申请号：US12407548
申请日：2009-03-19
申请人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
发明人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
IPC分类号： C23F1/00
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

4. 发明授权

US09305810B2 Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery 有权
标题翻译：用于快速气体交换，快速气体切换和可编程气体输送的方法和装置
公开(公告)号：US09305810B2
公开(公告)日：2016-04-05
申请号：US13456006
申请日：2012-04-25
申请人： Saravjeet Singh , Roy C. Nangoy
发明人： Saravjeet Singh , Roy C. Nangoy
IPC分类号： F17D1/00 , H01L21/67
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T137/0318 , Y10T137/87096
摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要翻译：本发明的实施例涉及一种气体输送系统。气体输送系统包括与一个或多个气体板和处理室流体连通的快速气体交换模块。快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的各个流量控制器以提供更长的使用寿命。

5. 发明授权

US08920599B2 High efficiency gas dissociation in inductively coupled plasma reactor with improved uniformity 有权
标题翻译：电感耦合等离子体反应器中高效率的气体离解具有改善的均匀性
公开(公告)号：US08920599B2
公开(公告)日：2014-12-30
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , C23C16/507
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

6. 发明申请

US20120091098A1 HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVELY COUPLED PLASMA REACTOR WITH IMPROVED UNIFORMITY 有权
标题翻译：具有改进均匀性的电感耦合等离子体反应器中的高效气体分离
公开(公告)号：US20120091098A1
公开(公告)日：2012-04-19
申请号：US13270623
申请日：2011-10-11
申请人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
发明人： Jivko Dinev , Saravjeet Singh , Roy C. Nangoy
IPC分类号： C23F1/00 , C23C16/448 , C23C16/513 , C23F1/08
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3211
摘要： Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.
摘要翻译：本发明的实施例涉及具有提高等离子体均匀性并改善与等离子体的功率耦合的线圈组件的等离子体室。一个实施例提供等离子体室。等离子体室包括具有侧壁和盖的室主体，其中室主体限定处理容积。等离子体室还包括设置在盖上方的线圈组件，其被配置为在处理体积内产生电感耦合等离子体，其中线圈组件包括布置在公共水平面中的两个或更多个水平线圈。

7. 发明授权

US08703581B2 Water soluble mask for substrate dicing by laser and plasma etch 有权
标题翻译：用于通过激光和等离子体蚀刻进行衬底切割的水溶性掩模
公开(公告)号：US08703581B2
公开(公告)日：2014-04-22
申请号：US13160891
申请日：2011-06-15
申请人： Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Saravjeet Singh , Madhava Rao Yalamanchili , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00
CPC分类号： H01L21/67207 , B23K26/0624 , B23K26/064 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3081 , H01L21/67069 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.
摘要翻译：公开了具有多个IC的切割衬底的方法。一种方法包括在半导体衬底上形成包含水溶性材料层的掩模。用飞秒激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使IC之间的衬底的区域暴露。然后将衬底通过图案化掩模中的间隙进行蚀刻，以对IC进行分离，并将水溶性材料层冲洗掉。

8. 发明授权

US08642448B2 Wafer dicing using femtosecond-based laser and plasma etch 有权
标题翻译：使用基于飞秒激光和等离子体蚀刻的晶片切割
公开(公告)号：US08642448B2
公开(公告)日：2014-02-04
申请号：US13160713
申请日：2011-06-15
申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , James M. Holden
发明人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , James M. Holden
IPC分类号： H01L21/00
CPC分类号： H01L21/822 , B23K26/36 , H01J37/32889 , H01J37/32899 , H01L21/3065 , H01L21/3083 , H01L21/67069 , H01L21/67092 , H01L21/67207 , H01L21/6836 , H01L21/78 , H01L23/544 , H01L2221/68327 , H01L2924/0002 , H01L2924/00
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。一种方法包括在半导体晶片上形成掩模。掩模由覆盖和保护集成电路的层组成。使用基于飞秒的激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

9. 发明申请

US20120322239A1 HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER 有权
标题翻译：混合激光器和等离子体刻蚀使用基板载体
公开(公告)号：US20120322239A1
公开(公告)日：2012-12-20
申请号：US13161052
申请日：2011-06-15
申请人： Saravjeet Singh , Brad Eaton , Ajay Kumar , Wei-Sheng Lei , James M. Holden , Madhava Rao Yalamanchili , Todd J. Egan
发明人： Saravjeet Singh , Brad Eaton , Ajay Kumar , Wei-Sheng Lei , James M. Holden , Madhava Rao Yalamanchili , Todd J. Egan
IPC分类号： H01L21/82 , C23F1/08 , H01L21/3065
CPC分类号： H01L21/67069 , B23K26/0624 , B23K26/064 , B23K26/36 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L21/3065 , H01L21/3081 , H01L21/67092 , H01L21/67207 , H01L21/6836 , H01L21/68707 , H01L21/78 , H01L2221/68327 , H01L2221/68377
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。一种方法包括在半导体晶片上形成掩模，掩模由覆盖并保护集成电路的层组成。半导体晶片由衬底载体支撑。然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙蚀刻半导体晶片，以在由衬底载体支撑的同时对集成电路进行分离。

10. 发明申请

US20120305184A1 DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR 有权
标题翻译：用于感应耦合等离子体（ICP）反应器的动态离子辐射和离子射孔
公开(公告)号：US20120305184A1
公开(公告)日：2012-12-06
申请号：US13455342
申请日：2012-04-25
申请人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
发明人： Saravjeet Singh , Graeme Jamieson Scott , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32633 , H01J2237/334
摘要： Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
摘要翻译：本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。

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