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1. 发明申请

US20130000731A1 METHOD AND APPARATUS FOR FAST GAS EXCHANGE, FAST GAS SWITCHING, AND PROGRAMMABLE GAS DELIVERY 有权
标题翻译：用于快速气体交换，快速气体切换和可编程气体输送的方法和装置
公开(公告)号：US20130000731A1
公开(公告)日：2013-01-03
申请号：US13456006
申请日：2012-04-25
申请人： Saravjeet SINGH , Roy C. Nangoy
发明人： Saravjeet SINGH , Roy C. Nangoy
IPC分类号： F16K11/20
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T137/0318 , Y10T137/87096
摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要翻译：本发明的实施例涉及一种气体输送系统。气体输送系统包括与一个或多个气体板和处理室流体连通的快速气体交换模块。快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的各个流量控制器以提供更长的使用寿命。

2. 发明申请

US20120322242A1 MULTI-STEP AND ASYMMETRICALLY SHAPED LASER BEAM SCRIBING 有权
标题翻译：多步和不对称形状的激光束
公开(公告)号：US20120322242A1
公开(公告)日：2012-12-20
申请号：US13180336
申请日：2011-07-11
申请人： Wei-Sheng LEI , Brad EATON , Madhava Rao YALAMANCHILI , Saravjeet SINGH , Ajay KUMAR , James M. HOLDEN
发明人： Wei-Sheng LEI , Brad EATON , Madhava Rao YALAMANCHILI , Saravjeet SINGH , Ajay KUMAR , James M. HOLDEN
IPC分类号： H01L21/82 , H01L21/3065
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/42 , B23K2103/50 , H01L21/3065 , H01L21/30655 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括激光烧蚀材料层，具有第一辐照度的烧蚀导线，并且具有低于第一辐照度的第二辐照度。调整为具有不同注量级的光束的多次通过或具有各种注量级的多个激光束可以用于消除掩模和IC层以暴露具有第一注量级的衬底，然后用第二注入层从沟槽底部清除再沉积的材料注量水平使用分束器的激光划片装置可以从单个激光器提供不同注量的第一和第二光束。

3. 发明申请

US20120322241A1 MULTI-LAYER MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH 有权
标题翻译：用于激光和等离子体蚀刻的基板的多层掩模
公开(公告)号：US20120322241A1
公开(公告)日：2012-12-20
申请号：US13161427
申请日：2011-06-15
申请人： James M. HOLDEN , Wei-Sheng LEI , Brad EATON , Todd EGAN , Saravjeet SINGH
发明人： James M. HOLDEN , Wei-Sheng LEI , Brad EATON , Todd EGAN , Saravjeet SINGH
IPC分类号： H01L21/78 , H01L21/3065
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/42 , B23K2103/50 , H01L21/30655 , H01L21/3081 , H01L21/67207 , H01L21/6836 , H01L2221/68327
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask.
摘要翻译：具有多个IC的切割基板的方法。一种方法包括在第一掩模材料层上形成包括可溶于半导体衬底上的溶剂的第一掩模材料层和不溶于溶剂的第二掩模材料层的多层掩模。多层掩模用激光划线工艺图案化以提供具有间隙的图案化掩模。图案化使IC之间的衬底的区域暴露。然后通过图案化掩模中的间隙对衬底进行等离子体蚀刻，以用第二掩模材料层对IC进行分离，从而为等离子体蚀刻的至少一部分保护第一掩模材料层。可溶性材料层在分离后溶解以除去多层掩模。

4. 发明申请

US20140273401A1 SUBSTRATE LASER DICING MASK INCLUDING LASER ENERGY ABSORBING WATER-SOLUBLE FILM 审中-公开
标题翻译：基板激光贴膜，包括激光能量吸收水溶膜
公开(公告)号：US20140273401A1
公开(公告)日：2014-09-18
申请号：US14204228
申请日：2014-03-11
申请人： Wei-Sheng LEI , Brad EATON , Aparna IYER , Saravjeet SINGH , Madhava Rao YALAMANCHILI , Ajay KUMAR
发明人： Wei-Sheng LEI , Brad EATON , Aparna IYER , Saravjeet SINGH , Madhava Rao YALAMANCHILI , Ajay KUMAR
IPC分类号： H01L21/78 , H01L21/67 , H01L23/544
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/31127 , H01L21/32131
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a laser energy absorbing material layer soluble in water over the semiconductor substrate. The laser energy absorbing material layer may be UV curable, and either remain uncured or be cured prior to removal with a water rinse. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the laser energy absorbing mask protecting the ICs for during the plasma etch. The soluble mask is then dissolved subsequent to singulation.
摘要翻译：具有多个IC的切割基板的方法。一种方法包括形成包含半导体衬底上可溶于水的激光能量吸收材料层的掩模。激光能量吸收材料层可以是紫外线固化的，并且在用水冲洗去除之前保持未固化或固化。用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使IC之间的衬底的区域暴露。然后可以通过图案化掩模中的间隙等离子体蚀刻衬底，以便在等离子体蚀刻期间用激光能量吸收掩模来保护IC。然后在分离后溶解可溶性面膜。

5. 发明申请

US20150200119A1 LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL 审中-公开
标题翻译：激光切割和等离子体蚀刻用于高切割强度和清洁面板
公开(公告)号：US20150200119A1
公开(公告)日：2015-07-16
申请号：US14671379
申请日：2015-03-27
申请人： Brad EATON , Saravjeet SINGH , Wei-Sheng LEI , Madhava Rao YALAMANCHILI , Tong LIU , Ajay KUMAR
发明人： Brad EATON , Saravjeet SINGH , Wei-Sheng LEI , Madhava Rao YALAMANCHILI , Tong LIU , Ajay KUMAR
IPC分类号： H01L21/67 , H01J37/32 , B23K26/36 , B23K26/40 , H01L21/677 , H01L21/78
CPC分类号： H01L21/67161 , B23K26/364 , B23K26/40 , B23K2103/50 , H01J37/32651 , H01J37/32788 , H01J2237/334 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67115 , H01L21/67742 , H01L21/78 , Y10T29/5124
摘要： In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation.
摘要翻译：在实施例中，实施涉及初始激光划片和随后的等离子体蚀刻的混合晶片或衬底切割工艺用于裸片切割。激光划片工艺可用于清洁地去除掩模层，有机和无机介电层以及器件层。然后可以在曝光或部分蚀刻晶片或衬底时终止激光蚀刻工艺。在实施例中，采用多等离子体蚀刻方法来骰子晶片，其中采用各向同性蚀刻来改善各向异性蚀刻后的管芯侧壁。各向同性蚀刻在单片切割之后从各向异性蚀刻的模具侧壁去除各向异性蚀刻副产物，粗糙度和/或扇贝。

6. 发明申请

US20140213041A1 LASER AND PLASMA ETCH WAFER DICING WITH ETCH CHAMBER SHIELD RING FOR FILM FRAME WAFER APPLICATIONS 有权
标题翻译：激光和等离子体蚀刻波形用于膜片框架应用的隔离屏蔽环
公开(公告)号：US20140213041A1
公开(公告)日：2014-07-31
申请号：US14158529
申请日：2014-01-17
申请人： Wei-Sheng LEI , Saravjeet SINGH , Jivko DINEV , Aparna IYER , Brad EATON , Ajay KUMAR
发明人： Wei-Sheng LEI , Saravjeet SINGH , Jivko DINEV , Aparna IYER , Brad EATON , Ajay KUMAR
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/308 , H01L21/027
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01J37/32009 , H01L21/0271 , H01L21/3065 , H01L21/31105 , H01L21/31127 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/68381
摘要： Laser and plasma etch wafer dicing where a mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a film frame by an adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The laser scribing exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask while the film frame is maintained at an acceptably low temperature with a chamber shield ring configured to sit beyond the wafer edge and cover the frame. The shield ring may be raised and lowered, for example, on lifter pins to facilitate transfer of the wafer on frame.
摘要翻译：激光和等离子体蚀刻晶片切割，其中形成掩模以覆盖形成在晶片上的IC，以及提供与IC的界面的任何凸块。半导体晶片通过粘合膜耦合到胶片框架。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。激光划线使半导体晶片的区域露出在形成有IC的薄膜层的下方。半导体晶片通过图案化掩模中的间隙进行等离子体蚀刻，同时膜框架被保持在可接受的低温下，腔室屏蔽环被配置为超过晶片边缘并覆盖框架。屏蔽环可以升高和降低，例如在升降器销上，以促进晶片在框架上的传送。

7. 发明申请

US20140017881A1 LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL 有权
标题翻译：激光切割和等离子体蚀刻用于高切割强度和清洁面板
公开(公告)号：US20140017881A1
公开(公告)日：2014-01-16
申请号：US13938570
申请日：2013-07-10
申请人： Brad EATON , Saravjeet SINGH , Wei-Sheng LEI , Madhava Rao YALAMANCHILI , Tong LIU , Ajay KUMAR
发明人： Brad EATON , Saravjeet SINGH , Wei-Sheng LEI , Madhava Rao YALAMANCHILI , Tong LIU , Ajay KUMAR
IPC分类号： H01L21/78
CPC分类号： H01L21/67161 , B23K26/364 , B23K26/40 , B23K2103/50 , H01J37/32651 , H01J37/32788 , H01J2237/334 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67115 , H01L21/67742 , H01L21/78 , Y10T29/5124
摘要： In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation.
摘要翻译：在实施例中，实施涉及初始激光划片和随后的等离子体蚀刻的混合晶片或衬底切割工艺用于裸片切割。激光划片工艺可用于清洁地去除掩模层，有机和无机介电层以及器件层。然后可以在曝光或部分蚀刻晶片或衬底时终止激光蚀刻工艺。在实施例中，采用多等离子体蚀刻方法来骰子晶片，其中采用各向同性蚀刻来改善各向异性蚀刻后的管芯侧壁。各向同性蚀刻在单片切割之后从各向异性蚀刻的模具侧壁去除各向异性蚀刻副产物，粗糙度和/或扇贝。

8. 发明申请

US20120322234A1 IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH 有权
标题翻译：用于激光扫描和等离子体蚀刻的器件结合的现场沉积掩模层
公开(公告)号：US20120322234A1
公开(公告)日：2012-12-20
申请号：US13160973
申请日：2011-06-15
申请人： Madhava Rao YALAMANCHILI , Wei-Sheng LEI , Brad EATON , Saravjeet SINGH , Ajay KUMAR , Banqiu WU
发明人： Madhava Rao YALAMANCHILI , Wei-Sheng LEI , Brad EATON , Saravjeet SINGH , Ajay KUMAR , Banqiu WU
IPC分类号： H01L21/82 , C23F1/08
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

9. 发明申请

US20120322233A1 WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH 有权
标题翻译：用于激光和等离子体蚀刻的基底的水溶性掩模
公开(公告)号：US20120322233A1
公开(公告)日：2012-12-20
申请号：US13160891
申请日：2011-06-15
申请人： Wei-Sheng LEI , Saravjeet SINGH , Madhava Rao Yalamanchili , Brad EATON , Ajay KUMAR
发明人： Wei-Sheng LEI , Saravjeet SINGH , Madhava Rao Yalamanchili , Brad EATON , Ajay KUMAR
IPC分类号： H01L21/82 , H01L21/3065
CPC分类号： H01L21/67207 , B23K26/0624 , B23K26/064 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3081 , H01L21/67069 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.
摘要翻译：公开了具有多个IC的切割衬底的方法。一种方法包括在半导体衬底上形成包含水溶性材料层的掩模。用飞秒激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使IC之间的衬底的区域暴露。然后将衬底通过图案化掩模中的间隙进行蚀刻，以对IC进行分离，并将水溶性材料层冲洗掉。

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