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1. 发明授权

US06893548B2 Method of conditioning electrochemical baths in plating technology 失效
标题翻译：电镀技术中电化学浴的调理方法
公开(公告)号：US06893548B2
公开(公告)日：2005-05-17
申请号：US09882208
申请日：2001-06-13
申请人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
发明人： Robin Cheung , Daniel A. Carl , Liang-Yuh Chen , Yezdi Dordi , Paul F. Smith , Ratson Morad , Peter Hey , Ashok Sinha
IPC分类号： C23C18/16 , C25D7/12 , C25D21/12 , C25D21/18 , C25D5/00
CPC分类号： C25D21/18 , C23C18/1617 , C23C18/1683 , C25D21/12
摘要： An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition. The constituents may be added at the beginning of the use of the bath to initially condition the electrochemical bath or may be added, preferably either continuously or periodically, during the electrochemical deposition process.
摘要翻译：提供了一种用于分析或调理电化学浴的装置和方法。本发明的一个方面提供了一种用于在电化学沉积方法中分析电化学浴的方法，包括提供具有第一浴组成的第一电化学浴，利用电化学沉积工艺中的第一电化学浴形成具有第二浴的第二电化学浴组合和分析第一和第二组合物以鉴定在电化学沉积过程中产生的一种或多种成分。具有与在电化学沉积工艺中产生的一种或多种成分中的全部或至少一些基本上相同的组成的添加剂材料可以加入到另一电化学浴中以产生所需的化学组成。可以在使用浴的开始时添加组分以最初调节电化学浴，或者可以在电化学沉积过程期间连续地或周期性地添加。

2. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

3. 发明申请

US20060063370A1 Semiconductor device interconnect fabricating techniques 失效
标题翻译：半导体器件互连制造技术
公开(公告)号：US20060063370A1
公开(公告)日：2006-03-23
申请号：US10945664
申请日：2004-09-21
申请人： Robin Cheung , Ashok Sinha
发明人： Robin Cheung , Ashok Sinha
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76885 , H01L21/288 , H01L21/2885 , H01L21/76834 , H01L21/7685 , H01L21/76852 , H01L2221/1089
摘要： The present invention provides methods for fabricating integrated circuit structures for use in semiconductor wafer fabrication techniques. A Cu diffusion barrier/Cu seed sandwich layer is deposited on a substrate. A first sacrificial layer, deposited on the sandwich layer, is developed to form a cavity. A first Cu layer is selectively deposited on the sandwich layer inside the cavity. A second sacrificial layer is deposited on the first sacrificial layer and on the first Cu layer. A cavity is formed in the second sacrificial layer, exposing at least a portion of the first Cu layer. A second Cu layer is selectively deposited in the second sacrificial layer cavity including the exposed portion of the first Cu layer. The combination of the first and second Cu layers forms a Cu component. Subsequently, the first and second sacrificial layers are removed resulting in a Cu component that is free standing on the sandwich layer, such that the top and sides of the component are exposed. Sandwich layer portions extending from the Cu component are removed from the substrate, thereby forming an exposed sandwich layer edge between the surface of the Cu component and the substrate. A Cu diffusion barrier layer is deposited on the Cu component and on the exposed edge of the sandwich layer, resulting in a Cu barrier layer encapsulated component. The encapsulated component is encased in a dielectric layer. Similarly, Cu components of the present invention are fabricated by means of selective electroless Cu deposition in a sacrificial layer cavity having a metal layer that is formed by selective electroless deposition of a metal on a sensitizer layer. Examples of Cu components and encapsulated Cu components of the present invention include vertical interconnects and inverted damascene structures.
摘要翻译：本发明提供用于制造用于半导体晶片制造技术的集成电路结构的方法。在基底上沉积Cu扩散阻挡层/ Cu种子夹层。沉积在夹心层上的第一牺牲层被开发以形成空腔。第一Cu层被选择性地沉积在空腔内的夹层上。在第一牺牲层和第一Cu层上沉积第二牺牲层。在第二牺牲层中形成空腔，露出第一Cu层的至少一部分。第二Cu层被选择性地沉积在包括第一Cu层的暴露部分的第二牺牲层腔中。第一和第二Cu层的组合形成Cu组分。随后，去除第一和第二牺牲层，导致在夹层上自由站立的Cu成分，使得部件的顶部和侧面被暴露。从基板上除去从Cu成分延伸的夹层，从而在Cu成分的表面与基板之间形成露出的夹层结构。在Cu组分和夹层的暴露边缘上沉积Cu扩散阻挡层，形成Cu阻挡层封装组分。封装的组件被封装在电介质层中。类似地，本发明的Cu组分通过选择性无电镀Cu沉积在具有金属层的牺牲层腔中制造，所述金属层通过金属在敏化剂层上的选择性无电沉积形成。本发明的Cu组分和包封的Cu组分的实例包括垂直互连和反向镶嵌结构。

4. 发明授权

US6136163A Apparatus for electro-chemical deposition with thermal anneal chamber 有权
标题翻译：具有热退火室的电化学沉积设备
公开(公告)号：US6136163A
公开(公告)日：2000-10-24
申请号：US263126
申请日：1999-03-05
申请人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
发明人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
IPC分类号： B65G49/07 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , C25D17/00 , C25B9/00 , C25B15/00
CPC分类号： H01L21/6723 , C25D17/001 , H01L21/67098
摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
摘要翻译：本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元，以及流体连接到所述一个或多个电处理单元的电解质供应。本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

5. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

6. 发明申请

US20090035865A1 MOISTURE SENSOR 审中-公开
标题翻译：水分传感器
公开(公告)号：US20090035865A1
公开(公告)日：2009-02-05
申请号：US11832130
申请日：2007-08-01
申请人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
发明人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
IPC分类号： G01N33/18 , B01J19/00 , G01N21/78
CPC分类号： G01N31/222 , G01N21/81
摘要： A moisture sensor is disclosed which measures cumulative exposure to moisture. The moisture sensor comprises a matrix having a hygroscopic material, a first reagent, and a second reagent which interact only in the presence of water to produce a detectable, irreversible change in the matrix to provide a moisture indication. The moisture sensor may be incorporated with a disposable diagnostic device, whereby a method for preventing the use of such a disposable diagnostic device if exposed to excessive cumulative humidity is also disclosed.
摘要翻译：公开了一种测量累积暴露于湿气的湿度传感器。水分传感器包括具有吸湿材料，第一试剂和第二试剂的基质，其仅在水存在下相互作用以在基质中产生可检测的不可逆变化以提供湿气指示。湿度传感器可以与一次性诊断装置并入，由此也公开了如果暴露于过度累积湿度时防止使用这种一次性诊断装置的方法。

7. 发明申请

US20070238305A1 PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 失效
标题翻译：等离子体电介质蚀刻工艺，包括用于低介电常数材料的EX-SITU BACKSIDE POLMMER REMOVAL
公开(公告)号：US20070238305A1
公开(公告)日：2007-10-11
申请号：US11402074
申请日：2006-04-11
申请人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
发明人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译：首先在蚀刻反应器中进行用于蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅电介质层的等离子体蚀刻工艺，通过在工件上执行基于碳氟化合物的蚀刻工艺来蚀刻介电层的暴露部分，同时沉积保护性氟碳聚合物在光刻胶掩模上。然后，在灰化反应器中，通过将工件加热到超过100摄氏度，去除聚合物和光致抗蚀剂，暴露所述工件背面的周边部分，并提供来自氢处理气体的等离子体的产物，以减少包含在聚合物和光致抗蚀剂，直到聚合物已从所述工件的背面去除。处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。晶片（工件）背面可以通过延伸晶片提升销来暴露。

8. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

9. 发明申请

US20070066064A1 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US20070066064A1
公开(公告)日：2007-03-22
申请号：US11372752
申请日：2006-03-10
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00 , G01L21/30 , H01L21/302
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

10. 发明申请

US20060035025A1 Activated species generator for rapid cycle deposition processes 审中-公开
标题翻译：用于快速循环沉积工艺的活性物种发生器
公开(公告)号：US20060035025A1
公开(公告)日：2006-02-16
申请号：US11146295
申请日：2005-06-06
申请人： Donald Verplancken , Ashok Sinha
发明人： Donald Verplancken , Ashok Sinha
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/452 , H01J37/32357
摘要： A method for providing activated species for a cyclical deposition process is provided herein. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.
摘要翻译：本文提供了用于提供用于循环沉积工艺的活化物质的方法。在一个方面，所述方法包括将待激活的气体输送到等离子体发生器中，激活气体以产生一定体积的反应物质，将一部分反应性物质输送到处理区域中以在其内部的基底内反应并维持在在将一部分气体输送到处理区域中之后，剩余在等离子体发生器中的气体的至少一部分处于活化状态。等离子体发生器可以包括高密度等离子体（HDP）发生器，微波发生器，射频（RF）发生器，感应耦合等离子体（ICP）发生器，电容耦合发生器或其组合。

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