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1. 发明授权

US6136163A Apparatus for electro-chemical deposition with thermal anneal chamber 有权
标题翻译：具有热退火室的电化学沉积设备
公开(公告)号：US6136163A
公开(公告)日：2000-10-24
申请号：US263126
申请日：1999-03-05
申请人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
发明人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
IPC分类号： B65G49/07 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , C25D17/00 , C25B9/00 , C25B15/00
CPC分类号： H01L21/6723 , C25D17/001 , H01L21/67098
摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
摘要翻译：本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元，以及流体连接到所述一个或多个电处理单元的电解质供应。本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

2. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

3. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

4. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

5. 发明授权

US5846332A Thermally floating pedestal collar in a chemical vapor deposition chamber 失效
标题翻译：在化学气相沉积室中的热浮底座
公开(公告)号：US5846332A
公开(公告)日：1998-12-08
申请号：US680724
申请日：1996-07-12
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。尽管其热隔离，外围环电连接到基座以防止电弧。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

6. 发明授权

US06270859B1 Plasma treatment of titanium nitride formed by chemical vapor deposition 失效
公开(公告)号：US06270859B1
公开(公告)日：2001-08-07
申请号：US09049856
申请日：1998-03-27
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C1634
摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

7. 发明授权

US06296712B1 Chemical vapor deposition hardware and process 失效
标题翻译：化学气相沉积硬件和工艺
公开(公告)号：US06296712B1
公开(公告)日：2001-10-02
申请号：US09055689
申请日：1998-04-06
申请人： Xin Sheng Guo , Mohan Bhan , Justin Jones , Lawrence Lei , Russell Ellwanger , Mei Chang , Ashok Sinha , Avi Tepman
发明人： Xin Sheng Guo , Mohan Bhan , Justin Jones , Lawrence Lei , Russell Ellwanger , Mei Chang , Ashok Sinha , Avi Tepman
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/455 , H01L21/68735
摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.
摘要翻译：本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

8. 发明授权

US6129044A Apparatus for substrate processing with improved throughput and yield 有权
标题翻译：用于基板处理的装置，具有改善的生产量和产量
公开(公告)号：US6129044A
公开(公告)日：2000-10-10
申请号：US409477
申请日：1999-10-06
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/32 , C23C16/00 , G06F19/00
CPC分类号： C23C16/4411 , C23C16/4412 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/3244 , H01J37/32834 , H01J2237/2001
摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.
摘要翻译：本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。根据实施例，本发明提供了一种用于基板处理的装置。该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。热交换介质的热交换温度为约60℃以下。该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格一些基板。在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

9. 发明授权

US5964947A Removable pumping channel liners within a chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室内可拆卸的泵送通道衬管
公开(公告)号：US5964947A
公开(公告)日：1999-10-12
申请号：US857847
申请日：1997-05-16
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了在排出室的泵送通道中导电材料的热沉积。泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

10. 发明申请

US20080292433A1 BATCH EQUIPMENT ROBOTS AND METHODS OF ARRAY TO ARRAY WORK-PIECE TRANSFER FOR PHOTOVOLTAIC FACTORY 审中-公开
标题翻译：批量设备机器人和方法阵列工程转让光伏工厂
公开(公告)号：US20080292433A1
公开(公告)日：2008-11-27
申请号：US11747391
申请日：2007-05-11
申请人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
发明人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
IPC分类号： B65H5/00
CPC分类号： C23C16/54 , C23C14/568 , H01L31/18
摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.
摘要翻译：本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。工件可以从堆叠的供应提供给设备到并行阵列。另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。工件可以在并行批量传输操作的同时在制造架构内转移。机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

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