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    • 7. 发明申请
    • Treatment of silicon prior to nickel silicide formation
    • 在硅化镍形成之前处理硅
    • US20060035463A1
    • 2006-02-16
    • US10914928
    • 2004-08-10
    • Sue CrankShirin SiddiquiDeborah RileyTrace HurdPeijun Chen
    • Sue CrankShirin SiddiquiDeborah RileyTrace HurdPeijun Chen
    • H01L21/4763
    • H01L21/28518H01L21/76829
    • A method of preparing a die comprises treating exposed silicon to form an oxide prior to silicide formation; and depositing metal on the oxide. The metal may comprise titanium, cobalt, nickel, platinum, palladium, tungsten, molybdenum, or combinations thereof on the oxide. The oxide may be less than or equal to about 15 angstroms thick. In various embodiments, treating exposed silicon to form an oxide comprises forming a non- thermal oxide. Treating exposed silicon to form an oxide may also comprise treating the exposed silicon with an oxidizing plasma; alternatively, treating exposed silicon to form an oxide may comprise forming a chemical oxide. In certain other embodiments, treating exposed silicon to form an oxide comprises treating exposed silicon with a solution comprising ammonium hydroxide, hydrogen peroxide, and water; hydrochloric acid, hydrogen peroxide, and water; hydrogen peroxide; ozone; ozonated deionized water; or combinations thereof.
    • 制备模具的方法包括在硅化物形成之前处理暴露的硅以形成氧化物; 并在氧化物上沉积金属。 金属可以在氧化物上包含钛,钴,镍,铂,钯,钨,钼或它们的组合。 氧化物可以小于或等于约15埃厚。 在各种实施方案中,处理暴露的硅以形成氧化物包括形成非热氧化物。 处理暴露的硅以形成氧化物还可以包括用氧化等离子体处理暴露的硅; 或者,处理暴露的硅以形成氧化物可包括形成化学氧化物。 在某些其他实施方案中,处理暴露的硅以形成氧化物包括用包含氢氧化铵,过氧化氢和水的溶液处理暴露的硅; 盐酸,过氧化氢和水; 过氧化氢; 臭氧; 臭氧化去离子水; 或其组合。