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1. 发明申请

US20070049022A1 NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE THEREFOR 有权
标题翻译：镍合金硅胶包括其中的一种和其制造方法
公开(公告)号：US20070049022A1
公开(公告)日：2007-03-01
申请号：US11551374
申请日：2006-10-20
申请人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
发明人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/26513 , H01L21/26586 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
摘要翻译：本发明提供一种半导体器件，一种制造方法以及一种用于制造包括该半导体器件的集成电路的方法。除了其他元件之外，半导体器件可以包括位于衬底上的栅极结构，栅极结构包括栅极电介质层和栅极电极层。该半导体器件还可以包括位于衬底中或栅极结构附近的源极/漏极区域和位于源极/漏极区域中的镍合金硅化物，所述镍合金硅化物具有位于其中的铟的量。

2. 发明申请

US20070141840A1 Nickel silicide including indium and a method of manufacture therefor 有权
标题翻译：包括铟的硅化镍及其制造方法
公开(公告)号：US20070141840A1
公开(公告)日：2007-06-21
申请号：US11678950
申请日：2007-02-26
申请人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
发明人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/26586 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
摘要翻译：本发明提供一种半导体装置及其制造方法以及包括该半导体装置的集成电路的制造方法。除了其它元件之外，半导体器件可以包括衬底（110）以及位于衬底（110）上方的硅化镍区域（170），所述硅化镍区域（170）具有位于其中的铟的量。

3. 发明申请

US20060223295A1 Nickel silicide including indium and a method of manufacture therefor 有权
标题翻译：包括铟的硅化镍及其制造方法
公开(公告)号：US20060223295A1
公开(公告)日：2006-10-05
申请号：US11096660
申请日：2005-04-01
申请人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
发明人： Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/26586 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
摘要翻译：本发明提供一种半导体装置及其制造方法以及包括该半导体装置的集成电路的制造方法。除了其它元件之外，半导体器件可以包括衬底（110）以及位于衬底（110）上方的硅化镍区域（170），所述硅化镍区域（170）具有位于其中的铟的量。

4. 发明申请

US20060024935A1 Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing 有权
标题翻译：金属硅化物通过硅<110>通道填料引起横向过度侵蚀
公开(公告)号：US20060024935A1
公开(公告)日：2006-02-02
申请号：US10903319
申请日：2004-07-30
申请人： Duofeng Yue , Peijun Chen , Sue Crank , Thomas Bonifield , Jiong-Ping Lu , Jie-Jie Xu
发明人： Duofeng Yue , Peijun Chen , Sue Crank , Thomas Bonifield , Jiong-Ping Lu , Jie-Jie Xu
IPC分类号： H01L21/28
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/28518 , H01L29/6659
摘要： The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).
摘要翻译：本发明提供一种制造用于半导体器件（110）的金属硅化物电极（100）的方法。该方法包括将小原子注入nMOS半导体衬底（130）至nMOS半导体衬底中不大于约30纳米的深度（132）。该方法还包括在nMOS半导体衬底上沉积过渡金属层（400）。使过渡金属层和nMOS半导体衬底反应以形成金属硅化物电极。本发明的其它方面包括制造集成电路（700）的方法。

5. 发明申请

US20060024938A1 Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions 审中-公开
标题翻译：在制造具有硅化物源极/漏极区域的半导体器件的过程中减少金属硅化物过度侵入缺陷的方法
公开(公告)号：US20060024938A1
公开(公告)日：2006-02-02
申请号：US10901697
申请日：2004-07-29
申请人： Duofeng Yue , Peijun Chen , Jiong-Ping Lu , Thomas Bonifield , Noel Russell
发明人： Duofeng Yue , Peijun Chen , Jiong-Ping Lu , Thomas Bonifield , Noel Russell
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/6656 , H01L21/823814 , H01L29/665 , H01L29/6653
摘要： The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor device, and a semiconductor device. The method for manufacturing a semiconductor device, among other steps, includes forming source/drain regions (290) in a substrate (210), the source/drain regions (290) located proximate a gate structure having sidewall spacers (270) and positioned over the substrate (210), and modifying a footprint of the sidewall spacers (270) by forming protective regions (410) proximate a base of the sidewall spacers (270). The method further includes forming metal silicide regions (610) in the source/drain regions (290).
摘要翻译：本发明提供一种半导体器件的制造方法以及包括该半导体器件的集成电路的制造方法以及半导体器件。除了其他步骤之外，制造半导体器件的方法包括在衬底（210）中形成源极/漏极区域（290），源/漏极区域（290）位于具有侧壁间隔物（270）的栅极结构附近并定位在衬底（210），并且通过在侧壁间隔物（270）的基部附近形成保护区（410）来修改侧壁间隔物（270）的覆盖区。该方法还包括在源/漏区（290）中形成金属硅化物区（610）。

6. 发明申请

US20050208762A1 Metal-halogen physical vapor deposition for semiconductor device defect reduction 有权
标题翻译：用于半导体器件缺陷的金属卤素物理气相沉积
公开(公告)号：US20050208762A1
公开(公告)日：2005-09-22
申请号：US10903805
申请日：2004-07-30
申请人： Peijun Chen , Duofeng Yue , Douglas Mercer , Noel Russell
发明人： Peijun Chen , Duofeng Yue , Douglas Mercer , Noel Russell
IPC分类号： H01L21/285 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/8234 , H01L21/8238 , H01L29/78
CPC分类号： H01L21/28518 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L21/823835 , H01L29/665 , H01L29/78
摘要： The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, halogen atoms (120) and transition metal atoms (130) to form a halogen-containing metal layer (140) on a semiconductor substrate (150). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400) comprising the metal silicide electrode.
摘要翻译：本发明提供一种制造用于半导体器件（110）的金属硅化物电极（100）的方法。该方法包括通过物理气相沉积沉积卤素原子（120）和过渡金属原子（130）以在半导体衬底（150）上形成含卤素的金属层（140）。使含卤素金属层和半导体基板反应形成金属硅化物电极。本发明的其它方面包括制造包括金属硅化物电极的集成电路（400）的方法。

7. 发明申请

US20060035463A1 Treatment of silicon prior to nickel silicide formation 有权
标题翻译：在硅化镍形成之前处理硅
公开(公告)号：US20060035463A1
公开(公告)日：2006-02-16
申请号：US10914928
申请日：2004-08-10
申请人： Sue Crank , Shirin Siddiqui , Deborah Riley , Trace Hurd , Peijun Chen
发明人： Sue Crank , Shirin Siddiqui , Deborah Riley , Trace Hurd , Peijun Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76829
摘要： A method of preparing a die comprises treating exposed silicon to form an oxide prior to silicide formation; and depositing metal on the oxide. The metal may comprise titanium, cobalt, nickel, platinum, palladium, tungsten, molybdenum, or combinations thereof on the oxide. The oxide may be less than or equal to about 15 angstroms thick. In various embodiments, treating exposed silicon to form an oxide comprises forming a non- thermal oxide. Treating exposed silicon to form an oxide may also comprise treating the exposed silicon with an oxidizing plasma; alternatively, treating exposed silicon to form an oxide may comprise forming a chemical oxide. In certain other embodiments, treating exposed silicon to form an oxide comprises treating exposed silicon with a solution comprising ammonium hydroxide, hydrogen peroxide, and water; hydrochloric acid, hydrogen peroxide, and water; hydrogen peroxide; ozone; ozonated deionized water; or combinations thereof.
摘要翻译：制备模具的方法包括在硅化物形成之前处理暴露的硅以形成氧化物; 并在氧化物上沉积金属。金属可以在氧化物上包含钛，钴，镍，铂，钯，钨，钼或它们的组合。氧化物可以小于或等于约15埃厚。在各种实施方案中，处理暴露的硅以形成氧化物包括形成非热氧化物。处理暴露的硅以形成氧化物还可以包括用氧化等离子体处理暴露的硅; 或者，处理暴露的硅以形成氧化物可包括形成化学氧化物。在某些其他实施方案中，处理暴露的硅以形成氧化物包括用包含氢氧化铵，过氧化氢和水的溶液处理暴露的硅; 盐酸，过氧化氢和水; 过氧化氢; 臭氧; 臭氧化去离子水; 或其组合。

8. 发明授权

US08372750B2 Method and system for improved nickel silicide 有权
标题翻译：改善硅化镍的方法和系统
公开(公告)号：US08372750B2
公开(公告)日：2013-02-12
申请号：US12890100
申请日：2010-09-24
申请人： Amitabh Jain , Peijun Chen , Jorge A. Kittl
发明人： Amitabh Jain , Peijun Chen , Jorge A. Kittl
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823835 , H01L29/665 , H01L29/78
摘要： According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.
摘要翻译：根据本发明的一个实施例，一种用于镍硅化的方法包括提供具有源极区，栅极区和漏极区的衬底，在源区中形成源极和在漏极区中形成漏极，退火源和漏极，在源极和漏极退火之后注入源区域和漏极区域中的重离子，在源极和漏极区域中的每一个中沉积镍层，并加热衬底以形成硅化镍区域每个源极和漏极区域通过加热衬底。

9. 发明申请

US20060073656A1 Method and system for improved nickel silicide 有权
公开(公告)号：US20060073656A1
公开(公告)日：2006-04-06
申请号：US10959674
申请日：2004-10-04
申请人： Amitabh Jain , Peijun Chen , Jorge Kittl
发明人： Amitabh Jain , Peijun Chen , Jorge Kittl
IPC分类号： H01L21/8238 , H01L21/44
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823835 , H01L29/665 , H01L29/78
摘要： According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.

10. 发明授权

US07825025B2 Method and system for improved nickel silicide 有权
标题翻译：改善硅化镍的方法和系统
公开(公告)号：US07825025B2
公开(公告)日：2010-11-02
申请号：US10959674
申请日：2004-10-04
申请人： Amitabh Jain , Peijun Chen , Jorge A. Kittl
发明人： Amitabh Jain , Peijun Chen , Jorge A. Kittl
IPC分类号： H01L21/44 , H01L21/477
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823835 , H01L29/665 , H01L29/78
摘要： According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.
摘要翻译：根据本发明的一个实施例，一种用于镍硅化的方法包括提供具有源极区，栅极区和漏极区的衬底，在源区中形成源极和在漏极区中形成漏极，退火源和漏极，在源极和漏极退火之后注入源区域和漏极区域中的重离子，在源极和漏极区域中的每一个中沉积镍层，并加热衬底以形成硅化镍区域每个源极和漏极区域通过加热衬底。

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