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1. 发明申请

US20070230056A1 Slider incorporating heaters and ELGs and method of fabrication 审中-公开
标题翻译：带有加热器和ELG的滑块和制造方法
公开(公告)号：US20070230056A1
公开(公告)日：2007-10-04
申请号：US11397823
申请日：2006-04-03
申请人： Robert Beach , David Seagle , Jila Tabib
发明人： Robert Beach , David Seagle , Jila Tabib
IPC分类号： G11B5/60
CPC分类号： G11B5/6064 , G11B5/6005
摘要： A slider for a magnetic disk drive is disclosed which includes a heater circuit structure, and at least one ELG circuit structure where a portion of the ELG circuit structure is removable by lapping. The ELG circuit structure is connected electrically in parallel with the heater circuit structure to a common set of electrical contact pads to produce a measured initial parallel resistance as measured at the common set of electrical contact pads. A modified parallel resistance is calculated to correspond to that of the modified individual resistance of the ELG when lapping operation is completed. The resistance is monitored during lapping operations to signal when the appropriate lapping depth is achieved. Also disclosed is a disk drive having the slider, and a method of fabrication for a slider.
摘要翻译：公开了一种用于磁盘驱动器的滑动器，其包括加热器电路结构，以及至少一个ELG电路结构，其中ELG电路结构的一部分可通过研磨而移除。 ELG电路结构与加热器电路结构并联连接到一组共同的电接触焊盘，以产生在公共电接触焊盘组测量的测量的初始并联电阻。当研磨操作完成时，计算修改的并联电阻以对应于ELG的修改的单独电阻。在研磨操作期间监测电阻，以在达到适当的研磨深度时发出信号。还公开了具有滑块的盘驱动器及其制造方法。

2. 发明申请

US20070246761A1 ELECTRICAL LAPPING GUIDES MADE FROM TUNNELING MAGNETORESISTIVE (TMR) MATERIAL 失效
标题翻译：隧道磁铁（TMR）材料制成的电气导线
公开(公告)号：US20070246761A1
公开(公告)日：2007-10-25
申请号：US11379321
申请日：2006-04-19
申请人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
发明人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
IPC分类号： H01L29/94
CPC分类号： G11B5/3173 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3906 , G11B5/3909 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.
摘要翻译：公开了隧道磁阻（TMR）电研磨引导件（ELG），用于磁感测装置的晶片制造，例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠，其包括第一导电层，阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面（CIP）方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。第一引线接触TMR堆叠的一侧，使得第一引线接触TMR堆叠的第一导电层和第二导电层。第二引线接触TMR堆叠的另一侧，使得第二引线接触TMR堆叠的第一导电层和第二导电层。

3. 发明申请

US20060146450A1 System, method, and apparatus for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing 有权
标题翻译：用于在晶片结构上提供用于处理期间的静电放电保护的临时的深度分流的系统，方法和装置
公开(公告)号：US20060146450A1
公开(公告)日：2006-07-06
申请号：US11029134
申请日：2005-01-04
申请人： Robert Beach , David Seagle , Jila Tabib
发明人： Robert Beach , David Seagle , Jila Tabib
IPC分类号： H04R31/00 , G11B5/127 , G11B5/33 , B44C1/22 , B24B1/00
CPC分类号： G11B5/11 , G11B5/3163 , G11B5/3903 , G11B5/40 , G11B5/455 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49156
摘要： A wafer-level shunt is incorporated into a sensor design. The sensor is formed with two shields. When the ABS is etched into the slider, this region of the ABS is recessed to form a deep etch region. A top of the shunt is centered in this region and a bottom of the shunt is located therebelow. The two shields form the sensor leads and are electrically connected to the shunt. The shunt is fabricated by depositing and plating a shield one seed layer, and plating a shield one bar for the shunt. A protection layer protects the seed between shield one and the shield one shunt material. Some of the material is deposited, milled, and refilled with insulation. The unmilled material remains as the sensor and the deep etch shunt. Shield two is deposited and connects to the top of the deep etch shunt. A metallic lead connection is located between the two shields to short the shield two shunt material to shield two of the sensor.
摘要翻译：晶片级分流器并入传感器设计中。传感器由两个屏蔽构成。当ABS被滑入滑块时，ABS的该区域被凹入以形成深刻蚀区域。分流器的顶部位于该区域的中心，并且分流器的底部位于其下方。两个屏蔽件形成传感器引线并且电连接到分流器。分流是通过沉积和镀覆屏蔽一个种子层而制成的，并且将屏蔽电镀一个条以用于分路。保护层保护屏蔽层与屏蔽层之间的种子分离材料。一些材料被沉积，研磨并用绝缘材料重新填充。未磨损的材料保持为传感器和深刻蚀分流。屏蔽二被沉积并连接到深蚀刻分流器的顶部。金属引线连接位于两个屏蔽之间，以将屏蔽两个分流材料短路以屏蔽两个传感器。

4. 发明申请

US20070188942A1 Tunnel MR head with closed-edge laminated free layer 有权
标题翻译：隧道MR头与封闭层叠自由层
公开(公告)号：US20070188942A1
公开(公告)日：2007-08-16
申请号：US11355045
申请日：2006-02-14
申请人： Robert Beach , David Heim , Vladimir Nikitin , David Seagle
发明人： Robert Beach , David Heim , Vladimir Nikitin , David Seagle
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/398 , G01R33/09 , G11B5/399
摘要： In a tunnel magnetoresistive (TMR) device, free sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. Thus, a CPP MR device may have a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack can be on the tunnel barrier, and the free stack can include structure for promoting uniform circumferential magnetization in the free stack.
摘要翻译：在隧道磁阻（TMR）器件中，自由子层由中间间隔层隔开，中间间隔层用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。因此，CPP MR装置可以具有种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括用于在自由堆叠中促进均匀周向磁化的结构。

5. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

6. 发明申请

US20140070341A1 Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM 有权
标题翻译： STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
公开(公告)号：US20140070341A1
公开(公告)日：2014-03-13
申请号：US13609780
申请日：2012-09-11
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82 , H01F38/00
CPC分类号： H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
摘要翻译：公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

7. 发明授权

US08614129B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08614129B2
公开(公告)日：2013-12-24
申请号：US11534855
申请日：2006-09-25
申请人： Robert Beach , Paul Bridger , Michael A. Briere
发明人： Robert Beach , Paul Bridger , Michael A. Briere
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

8. 发明授权

US08193612B2 Complimentary nitride transistors vertical and common drain 有权
标题翻译：不间断的氮化物晶体管垂直和普通漏极
公开(公告)号：US08193612B2
公开(公告)日：2012-06-05
申请号：US11056689
申请日：2005-02-11
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L29/20 , H01L31/0304
CPC分类号： H01L27/0605 , H01L29/2003
摘要： A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.
摘要翻译：公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

9. 发明授权

US08174051B2 III-nitride power device 有权
标题翻译： III族氮化物功率器件
公开(公告)号：US08174051B2
公开(公告)日：2012-05-08
申请号：US11821908
申请日：2007-06-26
申请人： Jianjun Cao , Yanping Ma , Robert Beach , Michael A. Briere
发明人： Jianjun Cao , Yanping Ma , Robert Beach , Michael A. Briere
IPC分类号： H01L21/02
CPC分类号： H01L21/8252 , H01L27/0605 , H01L29/0692 , H01L29/2003 , H01L29/402 , H01L29/7787
摘要： A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.
摘要翻译：一种III族氮化物功率器件，其包括围绕器件的功率电极之一的肖特基电极。

10. 发明授权

US08174048B2 III-nitride current control device and method of manufacture 有权
标题翻译： III族氮化物电流控制装置及其制造方法
公开(公告)号：US08174048B2
公开(公告)日：2012-05-08
申请号：US11040312
申请日：2005-01-21
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/872
摘要： A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
摘要翻译： III族氮化物器件包括用于产生名义上关闭的凹陷电极或增强模式的器件。通过设置凹陷电极，当电极接触不活动以阻止电流在器件中时，形成在两个III族氮化物材料的界面处的导电通道被中断。电极可以是肖特基接触或绝缘金属接触。可以提供两个欧姆接触以形成具有标称关闭特性的整流器件。形成有电极的凹部可以具有倾斜的侧面。电极可以结合设备的载流电极以多种几何形状形成。当电极不凹陷时，形成标称的器件或夹持电阻器。还通过将绝缘体提供非凹入的欧姆和肖特基接触到AlGaN层来形成二极管。

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