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1. 发明申请

US20070188942A1 Tunnel MR head with closed-edge laminated free layer 有权
标题翻译：隧道MR头与封闭层叠自由层
公开(公告)号：US20070188942A1
公开(公告)日：2007-08-16
申请号：US11355045
申请日：2006-02-14
申请人： Robert Beach , David Heim , Vladimir Nikitin , David Seagle
发明人： Robert Beach , David Heim , Vladimir Nikitin , David Seagle
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/398 , G01R33/09 , G11B5/399
摘要： In a tunnel magnetoresistive (TMR) device, free sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. Thus, a CPP MR device may have a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack can be on the tunnel barrier, and the free stack can include structure for promoting uniform circumferential magnetization in the free stack.
摘要翻译：在隧道磁阻（TMR）器件中，自由子层由中间间隔层隔开，中间间隔层用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。因此，CPP MR装置可以具有种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括用于在自由堆叠中促进均匀周向磁化的结构。

2. 发明授权

US08169816B2 Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory 有权
标题翻译：部分包层写入线的设计和制造方法，以增强磁随机存取存储器的写入裕度
公开(公告)号：US08169816B2
公开(公告)日：2012-05-01
申请号：US12584952
申请日：2009-09-15
申请人： Tai Min , Wai-Ming J. Kan , David Heim , Chyu Jiuh Torng
发明人： Tai Min , Wai-Ming J. Kan , David Heim , Chyu Jiuh Torng
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
摘要： A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.
摘要翻译：公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及在MTJ和导线之间形成的高导电性，非磁性间隔控制层。间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。避免半选择错误问题，同时保持较高的写入效率。间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

3. 发明申请

US20050243475A1 Spin valve sensor having antiferromagnetic (AFM) pinning layer structures formed in the end regions 失效
标题翻译：旋转阀传感器在端部区域形成反铁磁（AFM）钉扎层结构
公开(公告)号：US20050243475A1
公开(公告)日：2005-11-03
申请号：US10837168
申请日：2004-04-30
申请人： David Heim
发明人： David Heim
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： In one illustrative example, a spin valve sensor includes a free layer structure; an anti-parallel (AP) pinned layer structure which includes at least a first AP pinned layer; and a non-magnetic electrically conductive spacer layer formed between the free layer structure and the AP pinned layer structure. First and second antiferromagnetic (AFM) pinning layer structures for magnetically pinning the first AP pinned layer are formed in end regions but are absent from its central region. Edges of each AFM pinning layer structure may be separated by a distance DA from the sensor edges. The first AP pinned layer is formed in both the central region and the end regions so as to be in contact with the first and second AFM pinning layer structures. Advantageously, adequate pinning properties are exhibited in a sensor which provides the benefits of a self-pinned sensor (e.g. a reduced sensor profile in the central region).
摘要翻译：在一个说明性示例中，自旋阀传感器包括自由层结构; 包括至少第一AP钉扎层的反并联（AP）钉扎层结构; 以及形成在自由层结构和AP钉扎层结构之间的非磁性导电间隔层。用于磁性固定第一AP钉扎层的第一和第二反铁磁（AFM）钉扎层结构形成在端部区域中，但不存在于其中心区域。每个AFM钉扎层结构的边缘可以与传感器边缘分开距离D A A A。第一AP钉扎层形成在中心区域和端部区域中，以便与第一和第二AFM钉扎层结构接触。有利的是，在传感器中表现出适当的钉扎性能，其提供自固定传感器（例如在中心区域中减小的传感器轮廓）的优点。

4. 发明申请

US20070064353A1 Read sensor defined by lateral stack templates and method for fabrication 失效
标题翻译：读取由横向堆栈模板定义的传感器和制造方法
公开(公告)号：US20070064353A1
公开(公告)日：2007-03-22
申请号：US11231438
申请日：2005-09-20
申请人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo , Chun-Ming Wang
发明人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo , Chun-Ming Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , H01L43/12 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is disclosed for fabricating a read sensor for a magnetic head for a hard disk drive having a read sensor stack and two lateral stacks. The method of fabrication includes forming lateral stacks on a gap layer, surrounding a groove to form a template. The read sensor stack is then formed in the groove, which defines the lateral dimensions of the read sensor stack, and lead layers are then formed on the lateral stacks. Also disclosed is a read head for a disk drive having a sensor stack defined by pre-established lateral stacks, and a disk drive having the read head.
摘要翻译：公开了一种用于制造用于具有读取传感器堆叠和两个横向堆叠的硬盘驱动器的磁头的读取传感器的方法。制造方法包括在间隙层上形成横向叠层，围绕凹槽形成模板。然后将读取的传感器堆叠形成在凹槽中，其限定读取的传感器堆叠的横向尺寸，然后在横向堆叠件上形成引线层。还公开了一种用于具有由预先建立的横向叠层定义的传感器堆叠的磁盘驱动器的读取头，以及具有读取磁头的磁盘驱动器。

5. 发明申请

US20050227184A1 Topographically defined thin film CPP read head fabrication 失效
标题翻译：图形定位薄膜CPP读头制造
公开(公告)号：US20050227184A1
公开(公告)日：2005-10-13
申请号：US10815447
申请日：2004-03-31
申请人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo
发明人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： B82Y10/00 , G11B5/3163 , Y10T29/49048 , Y10T403/58
摘要： A method of constructing a small trackwidth magnetorsesistive sensor by defining a trench between first and second hard bias layers and depositing the sensor into the trench.
摘要翻译：一种通过在第一和第二硬偏置层之间限定沟槽并将传感器沉积到沟槽中来构造小轨道磁体主动传感器的方法。

6. 发明授权

US5901432A Method for making a thin film inductive write head having a pedestal pole tip and an electroplated gap 失效
标题翻译：用于制造具有基座极端和电镀间隙的薄膜感应写头的方法
公开(公告)号：US5901432A
公开(公告)日：1999-05-11
申请号：US997957
申请日：1997-12-24
申请人： Michael Armstrong , David Heim , Richard Hsiao , Neil Leslie Robertson , Hugo Alberto Emilio Santini
发明人： Michael Armstrong , David Heim , Richard Hsiao , Neil Leslie Robertson , Hugo Alberto Emilio Santini
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for making a merged thin film read/write head, where the first pole piece includes a pedestal or pole tip portion that extends up from the first pole piece layer, uses electroplating to form the gap so that the gap layer does not have to be removed later. After the first pole piece is deposited, the coil insulation structure is built over the first pole piece. Afterwards an electrically conductive seed layer of the same ferromagnetic material as the first pole piece is formed over the wafer to provide an electrically conductive path for subsequent electroplating. After the seed layer deposition, a photoresist pattern is then formed to define the shape of the second pole piece. Nonmagnetic nickel-phosphorous is then electroplated onto the seed layer in the region not covered by the photoresist pattern to form the gap layer. The second ferromagnetic layer is then electroplated onto the gap layer to define the shape of the second pole piece. The thickness of the second pole piece layer is deliberately made thicker than the desired final thickness because the second pole piece layer is used as a mask for subsequent ion beam milling to form the notched pole tip element of the first pole piece. The photoresist is removed and ion beam milling performed to remove the seed layer and a portion of the first pole piece layer to define the pedestal pole tip element of the first pole piece. The ion beam milling does not have to remove the gap layer because the electroplated gap has been defined by the photoresist pattern to have the desired trackwidth.
摘要翻译：一种制造合并薄膜读/写头的方法，其中第一极片包括从第一极片层向上延伸的基座或极尖部分，使用电镀形成间隙，使得间隙层不必稍后删除在第一极片沉积之后，线圈绝缘结构被构建在第一极片上。之后，在晶片上形成与第一极片相同的铁磁材料的导电种子层，以提供用于随后电镀的导电路径。在种子层沉积之后，然后形成光刻胶图案以限定第二极片的形状。然后将非磁性镍磷电镀在未被光致抗蚀剂图案覆盖的区域中的种子层上以形成间隙层。然后将第二铁磁层电镀到间隙层上以限定第二极靴的形状。由于第二极片层用作后续离子束铣削的掩模以形成第一极靴的切口极端部元件，所以第二极靴层的厚度被故意地制造得比期望的最终厚度更厚。去除光致抗蚀剂，进行离子束研磨以除去种子层和第一极片层的一部分，以限定第一极片的基座极端部元件。离子束铣削不必去除间隙层，因为电镀间隙已由光致抗蚀剂图案限定以具有期望的轨道宽度。

7. 发明授权

US07885094B2 MRAM with cross-tie magnetization configuration 有权
标题翻译：具有交叉磁化结构的MRAM
公开(公告)号：US07885094B2
公开(公告)日：2011-02-08
申请号：US12150241
申请日：2008-04-25
申请人： Tai Min , David Heim
发明人： Tai Min , David Heim
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , Y10S977/935
摘要： The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
摘要翻译： MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。这提高了自由层的开关能量势垒，从而减少了半选择误差。

8. 发明申请

US20090268512A1 MRAM with cross-tie magnetization configuration 有权
标题翻译：具有交叉磁化结构的MRAM
公开(公告)号：US20090268512A1
公开(公告)日：2009-10-29
申请号：US12150241
申请日：2008-04-25
申请人： Tai Min , David Heim
发明人： Tai Min , David Heim
IPC分类号： G11C11/02 , H01F7/00
CPC分类号： B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , Y10S977/935
摘要： The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
摘要翻译： MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。这提高了自由层的开关能量势垒，从而减少了半选择误差。

9. 发明申请

US20080062576A1 TOPOGRAPHICALLY DEFINED THIN FILM CPP READ HEAD 失效
标题翻译：地理定义薄膜CPP阅读头
公开(公告)号：US20080062576A1
公开(公告)日：2008-03-13
申请号：US11938677
申请日：2007-11-12
申请人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo
发明人： David Heim , Kim Lee , Tsann Lin , Jih-Shiuan Luo
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3163 , Y10T29/49048 , Y10T403/58
摘要： A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.
摘要翻译：通过限定形成在第一和第二硬偏置层之间的沟槽并将传感器沉积到沟槽中的窄轨道宽度磁阻传感器。传感器可以包括夹在第一和第二导电引线层之间的传感器堆叠。第一和第二电绝缘侧壁形成在传感器堆叠的任一侧。第一和第二硬偏压层从传感器堆叠的侧面延伸，通过第一和第二电绝缘侧壁与传感器堆叠分离。第一和第二物理硬绝缘层设置在每个硬偏压层上。

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