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1. 发明授权

US08614129B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08614129B2
公开(公告)日：2013-12-24
申请号：US11534855
申请日：2006-09-25
申请人： Robert Beach , Paul Bridger , Michael A. Briere
发明人： Robert Beach , Paul Bridger , Michael A. Briere
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

2. 发明授权

US08193612B2 Complimentary nitride transistors vertical and common drain 有权
标题翻译：不间断的氮化物晶体管垂直和普通漏极
公开(公告)号：US08193612B2
公开(公告)日：2012-06-05
申请号：US11056689
申请日：2005-02-11
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L29/20 , H01L31/0304
CPC分类号： H01L27/0605 , H01L29/2003
摘要： A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.
摘要翻译：公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

3. 发明授权

US07821034B2 Integrated III-nitride devices 有权
标题翻译：集成III族氮化物器件
公开(公告)号：US07821034B2
公开(公告)日：2010-10-26
申请号：US11650835
申请日：2007-01-08
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/337
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/41758 , H01L29/7787 , H01L29/7789
摘要： A III-nitride heterojunction semiconductor device that includes a power electrode that is electrically connected to a conductive substrate through a trench in the heterojunction thereof.
摘要翻译： III族氮化物异质结半导体器件，其包括通过其异质结中的沟槽电连接到导电衬底的功率电极。

4. 发明授权

US08697581B2 III-nitride semiconductor device with trench structure 有权
标题翻译：具有沟槽结构的III族氮化物半导体器件
公开(公告)号：US08697581B2
公开(公告)日：2014-04-15
申请号：US12217830
申请日：2008-07-09
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/302
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0847 , H01L29/2003 , H01L29/4236 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/66734 , H01L29/7787 , H01L29/7788 , H01L29/7789 , H01L29/7835
摘要： A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.
摘要翻译： III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。沟槽结构可以用在垂直传导或水平传导装置中。门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

5. 发明授权

US07491627B2 III-nitride device and method with variable epitaxial growth direction 有权
标题翻译： III族氮化物器件和具有可变外延生长方向的方法
公开(公告)号：US07491627B2
公开(公告)日：2009-02-17
申请号：US11894850
申请日：2007-08-22
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： H01L29/66325 , H01L29/2003
摘要： A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.
摘要翻译：由III族氮化物材料制成的半导体器件由外延生长制成，允许垂直和侧向生长几何形状来改善器件特性。由于没有使用离子注入工艺，所以由于半导体材料结构的更高的完整性，所得到的器件具有更大的击穿电压。外延生长的层还表现出更大的导热性，以改善功率半导体器件的工作。该装置可以包括横向生长的电荷补偿区域以形成超连接装置。所得到的器件可以是双向的，并且除了给定额定电压的较高电流容量之外还具有改进的击穿电压。

6. 发明申请

US20050180231A1 Complimentary lateral nitride transistors 有权
标题翻译：免费横向氮化物晶体管
公开(公告)号：US20050180231A1
公开(公告)日：2005-08-18
申请号：US11056833
申请日：2005-02-11
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： G11C7/00 , H01L27/06
CPC分类号： H01L27/0605
摘要： A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.
摘要翻译：一种半导体器件，其包括形成在衬底的支撑表面上的横向相邻的导电半导体区域的横向延伸堆叠，以及用于制造该器件的方法。

7. 发明申请

US20050179096A1 Complimentary nitride transistors vertical and common drain 有权
标题翻译：不间断的氮化物晶体管垂直和普通漏极
公开(公告)号：US20050179096A1
公开(公告)日：2005-08-18
申请号：US11056689
申请日：2005-02-11
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/336 , H01L27/06 , H01L29/20 , H01L29/76
CPC分类号： H01L27/0605 , H01L29/2003
摘要： A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.
摘要翻译：公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

8. 发明授权

US09157169B2 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path 有权
标题翻译：使用交替的高温和低温层制造超晶格以阻止寄生电流路径的方法
公开(公告)号：US09157169B2
公开(公告)日：2015-10-13
申请号：US11531508
申请日：2006-09-13
申请人： Paul Bridger , Robert Beach
发明人： Paul Bridger , Robert Beach
IPC分类号： C30B25/02 , C30B23/00 , C30B29/40 , H01L33/04 , C30B23/06 , C30B25/10 , C30B25/16 , H01L21/02
CPC分类号： H01L21/02507 , C30B23/002 , C30B23/063 , C30B25/02 , C30B25/10 , C30B25/16 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/04
摘要： A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.
摘要翻译：一种用于制造包括高温和低温生长步骤的III族氮化物半导体体的方法。

9. 发明授权

US09142637B2 III-nitride monolithic IC 有权
标题翻译： III族氮化物单片IC
公开(公告)号：US09142637B2
公开(公告)日：2015-09-22
申请号：US13027912
申请日：2011-02-15
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/76 , H01L29/66 , H01L21/762 , H01L29/20
CPC分类号： H01L29/66462 , H01L21/76 , H01L21/7605 , H01L21/76264 , H01L21/76289 , H01L29/2003 , Y10S438/93
摘要： III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.
摘要翻译： III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。该过程允许使用平面制造技术来避免额外的制造成本。与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。

10. 发明授权

US07510957B2 Complimentary lateral III-nitride transistors 有权
标题翻译：免费的侧面III族氮化物晶体管
公开(公告)号：US07510957B2
公开(公告)日：2009-03-31
申请号：US11633304
申请日：2006-12-04
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L27/0605
摘要： A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.
摘要翻译：一种半导体器件，其包括形成在衬底的支撑表面上的横向相邻的导电半导体区域的横向延伸堆叠，以及用于制造该器件的方法。

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