专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

2. 发明申请

US20050045580A1 Method of fabricating electronic component using resist structure with no undercut 有权
标题翻译：使用没有底切的抗蚀剂结构制造电子部件的方法
公开(公告)号：US20050045580A1
公开(公告)日：2005-03-03
申请号：US10652053
申请日：2003-08-29
申请人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
发明人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01J2237/3114
摘要： A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
摘要翻译：一种铣削结构的方法。将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。进行铣削加工，例如离子铣削。铣削过程包括以高发射率铣削结构并铣削结构。铣削加工只能执行一次，或重复多次。可以将高入射率定义为从被研磨表面的平面约65度至约90度。闪电发生率可以定义为距被研磨表面的平面约0至约30度。

3. 发明申请

US20060101636A1 Method for patterning a magnetoresistive sensor 有权
标题翻译：图案化磁阻传感器的方法
公开(公告)号：US20060101636A1
公开(公告)日：2006-05-18
申请号：US10993499
申请日：2004-11-18
申请人： Marie-Claire Cyrille , Elizabeth Dobisz , Wipul Jayasekara , Jui-Lung Li
发明人： Marie-Claire Cyrille , Elizabeth Dobisz , Wipul Jayasekara , Jui-Lung Li
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3903 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.
摘要翻译：一种用于构造使用耐蚀刻材料去除工艺的蚀刻掩模的磁阻传感器的方法，所述方法用于限定传感器宽度和条纹高度。该方法可以包括使用形成在光致抗蚀剂掩模下的Ta蚀刻掩模，以及使用离子铣削工艺来限定传感器。在执行离子研磨之后，蚀刻掩模基本上保持完整，因此通过稍后的CMP工艺容易地除去。蚀刻掩模层也非常耐高温，例如用于期望的氧化铝原子层沉积中使用的那些，其用于在传感器周围沉积保形层的氧化铝。

4. 发明申请

US20050269288A1 Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition 失效
标题翻译：用于垂直于平面（CPP）磁阻传感器定义的电流的双角铣削
公开(公告)号：US20050269288A1
公开(公告)日：2005-12-08
申请号：US11200757
申请日：2005-08-09
申请人： Marie-Claire Cyrille , Ying Hong , Wipul Jayasekara
发明人： Marie-Claire Cyrille , Ying Hong , Wipul Jayasekara
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , G11B5/127 , G11B5/33 , H04R31/00
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01J2237/3114 , H01L43/08 , H01L43/12 , Y10T29/49046
摘要： A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.
摘要翻译：一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。然后相对于法线以较大的角度执行第二（扫视）离子磨。第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。第一离子磨机以比第二离子磨机更大的偏压进行。第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。

5. 发明申请

US20070028441A1 Method of partial depth material removal for fabrication of CPP read sensor 失效
标题翻译：用于制造CPP读取传感器的部分深度材料去除方法
公开(公告)号：US20070028441A1
公开(公告)日：2007-02-08
申请号：US11197957
申请日：2005-08-05
申请人： Marie-Claire Cyrille , Ying Hong , Wipul Jayasekara
发明人： Marie-Claire Cyrille , Ying Hong , Wipul Jayasekara
IPC分类号： C23C14/32
CPC分类号： H01F41/308 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/3268 , Y10T29/49032 , Y10T29/49044
摘要： A method for fabricating a read head sensor for a magnetic disk drive is presented. The method includes providing a layered wafer stack to be shaped, where the layered wafer stack includes a free layer, a barrier layer and a pinned layer. A single- or multi-layered photoresist mask is formed upon the layered wafer stack to be shaped. A material removal source is provided and used to perform a partial depth material removal within a partial depth material removal range which extends from the free layer to within the pinned layer to a partial depth material removal endpoint. In various embodiments, this depth endpoint lies at or within the barrier layer or within but not through the pinned layer.
摘要翻译：提出了一种用于制造用于磁盘驱动器的读取头传感器的方法。该方法包括提供待成形的层状晶片叠层，其中层状晶片堆叠包括自由层，阻挡层和钉扎层。单层或多层光刻胶掩模形成在待成形的层状晶片叠层上。提供材料去除源并用于在部分深度材料去除范围内执行部分深度材料去除，该部分深度材料去除范围从自由层延伸到钉扎层内至部分深度材料去除端点。在各种实施例中，该深度端点位于或在阻挡层内或内部但不穿过被钉扎层。

6. 发明申请

US20060067009A1 Read head having shaped read sensor-biasing layer junctions using partial milling and method of fabrication 失效
标题翻译：读头使用部分铣削和制造方法成形读取传感器偏置层结
公开(公告)号：US20060067009A1
公开(公告)日：2006-03-30
申请号：US10952427
申请日：2004-09-27
申请人： Marie-Claire Cyrille , Wipul Jayasekara , Mustafa Pinarbasi
发明人： Marie-Claire Cyrille , Wipul Jayasekara , Mustafa Pinarbasi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack. A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled are also disclosed.
摘要翻译：公开了一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有成形结。该方法包括提供待成形的分层晶片叠层。没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。然后沉积与晶片叠层的成形结接触的硬偏压层。还公开了一种具有已经被部分铣削的读取头层堆叠的读取头和磁性硬盘驱动器。

7. 发明申请

US20050063101A1 Ion bombardment of electrical lapping guides to decrease noise during lapping process 失效
标题翻译：离子轰击电气研磨导轨，以减少研磨过程中的噪音
公开(公告)号：US20050063101A1
公开(公告)日：2005-03-24
申请号：US10964123
申请日：2004-10-12
申请人： Mark Church , Wipul Jayasekara , Howard Zolla
发明人： Mark Church , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/39 , B24B37/04 , G11B5/33 , G11B5/127
CPC分类号： B24B37/042 , Y10T29/49034 , Y10T29/49046 , Y10T29/49048
摘要： A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping
摘要翻译：一种降低研磨导轨中噪音的方法。掩蔽了巨型磁阻器件晶片的选定部分，由此限定晶片的掩蔽和未掩模区域，其中未掩蔽区域包括研磨引导件。用离子轰击晶片，使得未掩蔽区域的巨磁阻效应降低。研磨GMR装置，使用研磨导轨测量研磨的程度

8. 发明申请

US20070076328A1 Magnetic recording head with ESD shunt trace 失效
标题翻译：具有ESD分路迹线的磁记录头
公开(公告)号：US20070076328A1
公开(公告)日：2007-04-05
申请号：US11240542
申请日：2005-09-30
申请人： Wipul Jayasekara , Howard Zolla
发明人： Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/40 , G11B5/11 , G11B5/3133
摘要： Recording heads having an ESD shunt trace and methods of fabricating the same are disclosed. A recording head of the invention includes a first shield, a second shield, an MR read element between the first shield and the second shield, and an ESD shunt trace. The ESD shunt trace is formed from MR layers and is connected to the MR read element and one or both of the first shield and the second shield. One or more of the MR layers forming the ESD shunt trace are processed to reduce the MR properties of the ESD shunt trace. Examples of processing the ESD shunt trace are ion milling, ion implantation, oxidizing, reactive ion etching, sputter etching, wet chemical etching, etc.
摘要翻译：公开了具有ESD分流迹线的记录头及其制造方法。本发明的记录头包括第一屏蔽，第二屏蔽，第一屏蔽和第二屏蔽之间的MR读取元件以及ESD分流迹线。 ESD分路迹线由MR层形成，并连接到MR读取元件以及第一屏蔽和第二屏蔽中的一个或两个。处理形成ESD分流迹线的一个或多个MR层以降低ESD分流迹线的MR特性。处理ESD分流迹线的示例是离子铣削，离子注入，氧化，反应离子蚀刻，溅射蚀刻，湿化学蚀刻等。

9. 发明申请

US20060215313A1 Method for using CVD process to encapsulate coil in a magnetic write head 失效
标题翻译：使用CVD工艺将线圈封装在磁写头中的方法
公开(公告)号：US20060215313A1
公开(公告)日：2006-09-28
申请号：US11090457
申请日：2005-03-25
申请人： Richard Hsiao , Wipul Jayasekara , Howard Zolla
发明人： Richard Hsiao , Wipul Jayasekara , Howard Zolla
IPC分类号： G11B5/127
CPC分类号： G11B5/3133 , G11B5/17 , G11B5/3136 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： Applicant discloses a method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method according to the invention also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
摘要翻译：申请人公开了使用诸如原子层沉积（ALD），高速ALD，等离子体增强型ALD（PEALD），等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法）等化学气相沉积工艺制造具有高纵横比的线圈的磁写头的方法 PECVD）或低压化学气相沉积（LPCVD），在无空隙的线圈上形成封装膜。可用于封装的材料包括Al 2 O 3，SiO 2，AlN，Ta 2 O， 5，HfO 2，ZrO 2和YtO 3。使用超适形沉积工艺允许线圈的间距小于现有技术中可能的间距。根据本发明的方法还允许使用具有比硬质光刻胶更小的热膨胀系数的材料，从而提高热突起特性。

10. 发明申请

US20060207966A1 Method to improve ability to perform CMP-assisted liftoff for trackwidth definition 失效
标题翻译：提高执行CMP辅助提升能力的方法，用于跟踪宽度定义
公开(公告)号：US20060207966A1
公开(公告)日：2006-09-21
申请号：US11081222
申请日：2005-03-15
申请人： Shawn Hernandez , Wipul Jayasekara , Timothy Minvielle , Benjamin Wang , Howard Zolla
发明人： Shawn Hernandez , Wipul Jayasekara , Timothy Minvielle , Benjamin Wang , Howard Zolla
IPC分类号： B44C1/22
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996 , Y10T29/26 , Y10T29/49028 , Y10T29/49044 , Y10T29/49052
摘要： A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.
摘要翻译：提出了一种用于制造具有读取头传感器和硬偏压/引线层的读取头的方法，该读取头传感器和硬偏置/引线层包括在传感器材料区域中沉积传感器材料条，以及在第一和第二快速接头中沉积快速铣削介电材料的条带，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速铣削电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置/引线材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成第一和第二引线和盖。然后从这些区域中的每一个去除硬偏压/铅材料的盖和掩模材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式