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1. 发明申请

US20100163787A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20100163787A1
公开(公告)日：2010-07-01
申请号：US12451932
申请日：2008-06-09
申请人： Rika Tanaka , Haruki Nojo , Yoshiharu Ota
发明人： Rika Tanaka , Haruki Nojo , Yoshiharu Ota
IPC分类号： C09K13/04
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/04 , C23F3/06 , H01L21/3212
摘要： A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion.
摘要翻译：本发明的抛光组合物是适用于抛光所谓的最终抛光的金属膜的抛光组合物，并且含有平均粒度为20nm以上且小于80nm的胶体二氧化硅，其由使用光散射法作为磨粒的粒度分布测量; 和选自碘酸及其盐中的至少一种作为氧化剂，余量为水。通过含有这些组分，抛光组合物显示非选择性，同时充分抑制凹陷和侵蚀。

2. 发明授权

US06827752B2 Cerium oxide slurry, and method of manufacturing substrate 有权
标题翻译：氧化铈浆料及其制造方法
公开(公告)号：US06827752B2
公开(公告)日：2004-12-07
申请号：US10333643
申请日：2003-03-12
申请人： Haruki Nojo , Akitoshi Yoshida , Pascal Berar
发明人： Haruki Nojo , Akitoshi Yoshida , Pascal Berar
IPC分类号： C09G102
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.
摘要翻译：要解决的问题是提供一种能够以高精度平坦化基板上的不均匀膜的浆料，并且具有良好的稳定性，不分离成两层，通过絮凝沉降或经历粘度变化而固化。通过将具有不同中和度的聚丙烯酸铵作为表面活性剂添加到含有氧化铈颗粒的二氧化铈浆料中，并适当地调节加入的聚丙烯酸酯的总量来解决这个问题。

3. 发明授权

US6059920A Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method 失效
标题翻译：具有改进的抛光液供给装置的半导体装置研磨装置和研磨液供给方法
公开(公告)号：US6059920A
公开(公告)日：2000-05-09
申请号：US801857
申请日：1997-02-19
申请人： Haruki Nojo , Rempei Nakata , Kiyotaka Kawashima
发明人： Haruki Nojo , Rempei Nakata , Kiyotaka Kawashima
IPC分类号： B24B37/04 , B24B57/02 , H01L21/306 , C23F1/02 , B24B57/00
CPC分类号： B24B37/04 , B24B57/02 , H01L21/30625
摘要： The first pipe 34 delivers the first solution 21 containing polishing particles. The second pipe 37, containing a liquid mass flow unit 36, delivers the second solution containing a chemical substance. The outlet port of the first pipe and the outlet port of the second pipe are connected to one end portion of the third pipe 31. The third pipe has the other end portion with an inner diameter almost equal to the inner diameter of its one end portion. The first and second solutions introduced into the third pipe are mixed in the third pipe to generate a polishing liquid. The generated polishing liquid is supplied from the other end portion of the third pipe onto a polishing pad 13 to polish a semiconductor wafer 16.
摘要翻译：第一管34输送含有抛光颗粒的第一溶液21。含有液体质量流量单元36的第二管37输送含有化学物质的第二溶液。第一管的出口和第二管的出口连接到第三管31的一个端部。第三管的另一端部的内径几乎等于其一个端部的内径。引入第三管的第一和第二溶液在第三管中混合以产生抛光液。所产生的抛光液从第三管的另一端部被供给到研磨垫13上以抛光半导体晶片16。

4. 发明授权

US07968465B2 Periodic acid compositions for polishing ruthenium/low K substrates 有权
标题翻译：用于抛光钌/低K衬底的周期酸组合物
公开(公告)号：US07968465B2
公开(公告)日：2011-06-28
申请号：US10568077
申请日：2004-08-12
申请人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
发明人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.
摘要翻译：一种抛光其上具有至少一个钌特征的半导体衬底表面和至少一种电介质材料的方法，其中所述衬底与含有约0.0005至约1摩尔/千克高碘酸的水性组合物接触，约0.2％至约6重量％的平均粒度为约50nm或更小的二氧化硅磨料，以及足以将组合物的pH调节至约2.5至7的量的胺。钌对于。低K电介质大于20：1。有利的是，基板还含有含钽化合物，并且含钽化合物的抛光速率与钌的抛光速率大致相同，因此抛光过程是一步法。

5. 发明申请

US20090197412A1 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US20090197412A1
公开(公告)日：2009-08-06
申请号：US10534699
申请日：2003-11-13
申请人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
发明人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
IPC分类号： H01L21/304
CPC分类号： C09G1/02 , H01L21/31053
摘要： To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.
摘要翻译：提供有效地减少划痕发生的抛光浆料组合物，以及在实现经济的抛光步骤的同时减少划痕的发生的抛光方法。上述目的通过使用抛光含有金属氧化物颗粒，至少一种水溶性有机聚合物和水的半导体衬底的抛光浆料组合物来实现，所述浆料组合物的特征在于，当具有金属膜的测试衬底，通过在恒定的研磨压力下改变在抛光装置中配备的抛光垫的速率来研磨浅沟槽隔离膜或电介质膜，以获得最大抛光速率。

6. 发明申请

US20070084828A1 Polishing composition for a semiconductor substrate 审中-公开
标题翻译：半导体衬底抛光组合物
公开(公告)号：US20070084828A1
公开(公告)日：2007-04-19
申请号：US11546427
申请日：2006-10-12
申请人： Yasuhiro Yoneda , Mami Shirota , Haruki Nojo , Hirofumi Kashihara
发明人： Yasuhiro Yoneda , Mami Shirota , Haruki Nojo , Hirofumi Kashihara
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/31053 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount of from 2 to 22% by weight of the polishing composition, and the dispersant is contained in an amount of from 0.001 to 1.0% by weight of the polishing composition; a polishing process of a semiconductor substrate with the polishing composition for a semiconductor substrate; and a method for manufacturing a semiconductor device including the step of polishing a substrate to be polished in accordance with the polishing process. The polishing composition is used, for example, for the steps of subjecting to shallow trench isolation, subjecting an interlayer dielectric to planarization, forming an embedded metal line, forming an embedded capacitor, and the like. Especially, the method is suitable for the step of shallow trench isolation or the step of subjecting an interlayer dielectric to planarization, and preferably used for manufacturing a semiconductor device such as memory ICs, logic ICs, or system LSIs.
摘要翻译：一种用于半导体衬底的抛光组合物，其包含二羟基乙基甘氨酸，二氧化铈颗粒，分散剂和水性介质，其中二氧化铈颗粒的含量为抛光组合物的2至22重量％，并且分散剂包含在的量为抛光组合物的0.001〜1.0重量％具有半导体衬底的抛光组合物的半导体衬底的抛光工艺; 以及一种用于制造半导体器件的方法，包括根据抛光工艺抛光待抛光的基底的步骤。抛光组合物例如用于进行浅沟槽隔离，使层间电介质平坦化，形成嵌入金属线，形成嵌入式电容器等的步骤。特别地，该方法适用于浅沟槽隔离的步骤或使层间电介质平坦化的步骤，并且优选用于制造诸如存储器IC，逻辑IC或系统LSI的半导体器件。

7. 发明申请

US20060037942A1 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry 审中-公开
标题翻译：使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成电容器表面的方法
公开(公告)号：US20060037942A1
公开(公告)日：2006-02-23
申请号：US11170061
申请日：2005-06-30
申请人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
发明人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： C03C19/00 , C03C2218/328 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.
摘要翻译：使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成电容器表面的方法。浆料可以包括研磨剂，氧化剂和至少一种pH控制剂以控制浆料的pH。

8. 发明申请

US20050258139A1 Polishing method to reduce dishing of tungsten on a dielectric 有权
标题翻译：抛光方法可减少电介质上钨的凹陷
公开(公告)号：US20050258139A1
公开(公告)日：2005-11-24
申请号：US11132315
申请日：2005-05-19
申请人： Haruki Nojo , Yoshibumi Suzuki
发明人： Haruki Nojo , Yoshibumi Suzuki
IPC分类号： B24B1/00 , B24B7/19 , B24B37/04 , B44C1/22 , C09G1/02 , H01L21/02 , H01L21/306 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.
摘要翻译：本发明一般涉及用于化学机械抛光基底表面的组合物和相关方法，所述基底表面具有其上至少一个特征，其上包括钨及其上的至少一个特征，其上包括电介质材料。本发明的组合物和相关方法导致钨和电介质材料的相似去除速率。用于本发明方法的组合物通常具有约1.5至约3.5的pH并且包含高碘酸和胶体二氧化硅。

9. 发明授权

US06419557B2 Polishing method and polisher used in the method 有权
标题翻译：该方法中使用的抛光方法和抛光机
公开(公告)号：US06419557B2
公开(公告)日：2002-07-16
申请号：US09834730
申请日：2001-04-16
申请人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
发明人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
IPC分类号： B24B100
CPC分类号： C09G1/02 , H01L21/31053
摘要： A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM1, wherein M1 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO3H and SO3M2, wherein M2 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.
摘要翻译：一种抛光方法，包括将含有抛光颗粒和表面活性剂的抛光剂施加到形成在具有凹陷部分和突出部分的基底上的氧化物膜上，其中所述表面活性剂是包含至少一种选自以下的亲水基团的有机化合物：由COOH，COOM1组成的基团，其中M1表示当取代羧基的SO3H和SO3M2的氢原子时可以形成盐的原子或官能团，其中M2表示可以形成盐的原子或官能团当取代磺基的氢原子时; 并抛光膜，直到膜变平而不发生凹陷。

10. 发明授权

US09676966B2 Chemical mechanical polishing composition and process 有权
公开(公告)号：US09676966B2
公开(公告)日：2017-06-13
申请号：US10534699
申请日：2003-11-13
申请人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
发明人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
IPC分类号： H01L21/302 , C03C15/00 , C09G1/02
CPC分类号： C09G1/02 , H01L21/31053
摘要： To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.

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