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1. 发明授权

US09676966B2 Chemical mechanical polishing composition and process 有权
公开(公告)号：US09676966B2
公开(公告)日：2017-06-13
申请号：US10534699
申请日：2003-11-13
申请人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
发明人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
IPC分类号： H01L21/302 , C03C15/00 , C09G1/02
CPC分类号： C09G1/02 , H01L21/31053
摘要： To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.

2. 发明申请

US20090197412A1 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US20090197412A1
公开(公告)日：2009-08-06
申请号：US10534699
申请日：2003-11-13
申请人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
发明人： Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
IPC分类号： H01L21/304
CPC分类号： C09G1/02 , H01L21/31053
摘要： To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.
摘要翻译：提供有效地减少划痕发生的抛光浆料组合物，以及在实现经济的抛光步骤的同时减少划痕的发生的抛光方法。上述目的通过使用抛光含有金属氧化物颗粒，至少一种水溶性有机聚合物和水的半导体衬底的抛光浆料组合物来实现，所述浆料组合物的特征在于，当具有金属膜的测试衬底，通过在恒定的研磨压力下改变在抛光装置中配备的抛光垫的速率来研磨浅沟槽隔离膜或电介质膜，以获得最大抛光速率。

3. 发明申请

US20070084828A1 Polishing composition for a semiconductor substrate 审中-公开
标题翻译：半导体衬底抛光组合物
公开(公告)号：US20070084828A1
公开(公告)日：2007-04-19
申请号：US11546427
申请日：2006-10-12
申请人： Yasuhiro Yoneda , Mami Shirota , Haruki Nojo , Hirofumi Kashihara
发明人： Yasuhiro Yoneda , Mami Shirota , Haruki Nojo , Hirofumi Kashihara
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/31053 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount of from 2 to 22% by weight of the polishing composition, and the dispersant is contained in an amount of from 0.001 to 1.0% by weight of the polishing composition; a polishing process of a semiconductor substrate with the polishing composition for a semiconductor substrate; and a method for manufacturing a semiconductor device including the step of polishing a substrate to be polished in accordance with the polishing process. The polishing composition is used, for example, for the steps of subjecting to shallow trench isolation, subjecting an interlayer dielectric to planarization, forming an embedded metal line, forming an embedded capacitor, and the like. Especially, the method is suitable for the step of shallow trench isolation or the step of subjecting an interlayer dielectric to planarization, and preferably used for manufacturing a semiconductor device such as memory ICs, logic ICs, or system LSIs.
摘要翻译：一种用于半导体衬底的抛光组合物，其包含二羟基乙基甘氨酸，二氧化铈颗粒，分散剂和水性介质，其中二氧化铈颗粒的含量为抛光组合物的2至22重量％，并且分散剂包含在的量为抛光组合物的0.001〜1.0重量％具有半导体衬底的抛光组合物的半导体衬底的抛光工艺; 以及一种用于制造半导体器件的方法，包括根据抛光工艺抛光待抛光的基底的步骤。抛光组合物例如用于进行浅沟槽隔离，使层间电介质平坦化，形成嵌入金属线，形成嵌入式电容器等的步骤。特别地，该方法适用于浅沟槽隔离的步骤或使层间电介质平坦化的步骤，并且优选用于制造诸如存储器IC，逻辑IC或系统LSI的半导体器件。

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