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1. 发明授权

US07968465B2 Periodic acid compositions for polishing ruthenium/low K substrates 有权
标题翻译：用于抛光钌/低K衬底的周期酸组合物
公开(公告)号：US07968465B2
公开(公告)日：2011-06-28
申请号：US10568077
申请日：2004-08-12
申请人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
发明人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.
摘要翻译：一种抛光其上具有至少一个钌特征的半导体衬底表面和至少一种电介质材料的方法，其中所述衬底与含有约0.0005至约1摩尔/千克高碘酸的水性组合物接触，约0.2％至约6重量％的平均粒度为约50nm或更小的二氧化硅磨料，以及足以将组合物的pH调节至约2.5至7的量的胺。钌对于。低K电介质大于20：1。有利的是，基板还含有含钽化合物，并且含钽化合物的抛光速率与钌的抛光速率大致相同，因此抛光过程是一步法。

2. 发明申请

US20080038995A1 Periodic Acid Compositions For Polishing Ruthenium/Low K Substrates 有权
标题翻译：用于抛光钌/低K基板的周期酸组合物
公开(公告)号：US20080038995A1
公开(公告)日：2008-02-14
申请号：US10568077
申请日：2004-08-12
申请人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
发明人： Robert J. Small , Haruki Nojo , Kenichi Orui , Steve Masami Aragaki , Atsushi Hayashida
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a.low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.
摘要翻译：一种抛光其上具有至少一个钌特征的半导体衬底表面和至少一种电介质材料的方法，其中所述衬底与含有约0.0005至约1摩尔/千克高碘酸的水性组合物接触，约0.2％至约6重量％的平均粒度为约50nm或更小的二氧化硅磨料，以及足以将组合物的pH调节至约2.5至7的量的胺。钌对于低K电介质大于20：1。有利的是，基板还含有含钽化合物，并且含钽化合物的抛光速率与钌的抛光速率大致相同，因此抛光过程是一步法。

3. 发明申请

US20090250656A1 Free Radical-Forming Activator Attached to Solid and Used to Enhance CMP Formulations 审中-公开
标题翻译：固体自由基形成活化剂，用于增强CMP配方
公开(公告)号：US20090250656A1
公开(公告)日：2009-10-08
申请号：US12419625
申请日：2009-04-07
申请人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
发明人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1463 , C23F3/04 , G11B5/3163 , G11B5/3169 , H01L21/3212
摘要： A chemical mechanical polishing composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.
摘要翻译：一种化学机械抛光组合物，其具有：包含水和至少一种当与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。优选的活化剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。活化剂优选为Cu或Fe的离子。有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。

4. 发明授权

US07419911B2 Compositions and methods for rapidly removing overfilled substrates 失效
标题翻译：用于快速去除过度填充底物的组合物和方法
公开(公告)号：US07419911B2
公开(公告)日：2008-09-02
申请号：US10984820
申请日：2004-11-10
申请人： Philippe H. Chelle , Robert J. Small
发明人： Philippe H. Chelle , Robert J. Small
IPC分类号： B08B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C23F1/18 , C23F3/06
摘要： This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.
摘要翻译：本发明涉及用于去除过度填充底物的组合物和方法，优选以相对高的去除速率。有利地，根据本发明的组合物可以含有氧化剂，优选的是每种类型的氧化剂，例如过氧化物，高碘酸和过乙酸，并且还可以任选地含有研磨剂。

5. 发明授权

US07314823B2 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US07314823B2
公开(公告)日：2008-01-01
申请号：US11194467
申请日：2005-08-02
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： H01L21/44
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

6. 发明授权

US06319885B1 Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效
标题翻译：包括具有还原和氧化电位的亲核胺化合物的清洁溶液
公开(公告)号：US06319885B1
公开(公告)日：2001-11-20
申请号：US09603693
申请日：2000-06-26
申请人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
IPC分类号： C11D162
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D3/2058 , C11D3/2065 , C11D3/2086 , C11D3/30 , C11D3/3427 , C11D3/3472 , C11D3/43 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C11D11/0047 , C11D11/0052 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/02063 , H01L21/31133 , H01L21/76802 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
摘要翻译：描述了用于去除抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的底物蚀刻残余物的组合物，至少一种有机溶剂，水和任选的螯合剂。优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。此后，组合组件。使用组合物后，组合物的未使用部分可以通过加入螯合剂来处理或再活化。

7. 发明授权

US07524346B2 Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates 有权
标题翻译：化学机械平面化浆料的组合物接触贵金属特征的基材
公开(公告)号：US07524346B2
公开(公告)日：2009-04-28
申请号：US10057206
申请日：2002-01-25
申请人： Robert J. Small , Zhefei J. Chen
发明人： Robert J. Small , Zhefei J. Chen
IPC分类号： C09G1/00 , C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00 , H01L28/60
摘要： A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.
摘要翻译：用于化学机械平面化的组合物包括高碘酸和研磨剂，其组合量足以使其上具有特征的基材表面平坦化，其中包含贵金属，贵金属合金，贵金属氧化物或其任何组合。在一个实施方案中，高碘酸的存在量为约0.05至约0.3摩尔/千克，磨料的存在量为约0.2至约6重量％。在另一个实施方案中，组合物还包含pH调节剂，其量足以使组合物的pH在约pH 5至约pH 10或约pH 1至约pH 4的范围内包括至少一种贵金属，贵金属合金或贵金属氧化物或其组合的其上具有其特征的基材表面的平面化方法包括提供组合物或浆料，所述组合物或浆料包含合成量足够的高碘酸和磨料平坦化基板表面，并用浆料抛光表面。还提供了通过这种方法制造的基板。

8. 发明申请

US20090029553A1 Free radical-forming activator attached to solid and used to enhance CMP formulations 审中-公开
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US20090029553A1
公开(公告)日：2009-01-29
申请号：US12232712
申请日：2008-09-23
申请人： Brandon Shane Scott , Robert J. Small
发明人： Brandon Shane Scott , Robert J. Small
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23F3/00 , C23F3/04 , G11B5/3163 , G11B5/3169 , Y02P20/582
摘要： The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.
摘要翻译：本发明提供了一种用于化学机械抛光的组合物，其包括至少一种具有至少部分地被活化剂涂覆的表面的磨料颗粒。活化剂包括不同于第4组（b），第5组（b）或第6组（b）组的金属的金属。组合物还包含至少一种氧化剂。认为组合物由于在活化剂表面上涂覆在磨料颗粒表面上的活化剂与氧化剂之间的相互作用而有效，以形成自由基。本发明进一步提供了一种在基底表面上抛光特征或层如金属膜的组合物的方法。本发明另外提供了制造这种方法的基材。

9. 发明申请

US20090011967A1 Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 审中-公开
公开(公告)号：US20090011967A1
公开(公告)日：2009-01-08
申请号：US12213300
申请日：2008-06-17
申请人： Wai Mun Lee , Charles U. Pittman, JR. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, JR. , Robert J. Small
IPC分类号： C11D7/32
CPC分类号： G03F7/425 , C11D7/261 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23G1/18
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

10. 发明授权

US07135445B2 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials 有权
标题翻译：在石英涂层多晶硅和其他材料的清洗中使用双胆碱和三胆碱的方法
公开(公告)号：US07135445B2
公开(公告)日：2006-11-14
申请号：US10689657
申请日：2003-10-22
申请人： Richard William Charm , De-Ling Zhou , Robert J. Small , Shihying Lee
发明人： Richard William Charm , De-Ling Zhou , Robert J. Small , Shihying Lee
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.
摘要翻译：提供了基于双胆碱和三胆碱化合物（例如它们的氢氧化物）的新的清洁化学品，以便解决光刻胶和助熔剂的去除，同时最小化衬底的任何蚀刻。

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