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    • 7. 发明授权
    • Enhanced data retention mode for dynamic memories
    • 增强动态存储器的数据保留模式
    • US08605489B2
    • 2013-12-10
    • US13307884
    • 2011-11-30
    • William Robert ReohrRobert Kevin MontoyeMichael A Sperling
    • William Robert ReohrRobert Kevin MontoyeMichael A Sperling
    • G11C11/24G11C7/00G11C5/14G11C8/00
    • G11C11/4085G11C11/406G11C11/4072G11C11/4074G11C11/4094
    • A memory device includes memory cells, each of the memory cells having corresponding bit and word lines connected thereto for accessing the memory cells, a word line circuit coupled with at least one word line, and a bit line circuit coupled with at least one bit line. The memory device further includes at least one control circuit coupled with the bit and word line circuits. The control circuit is operative to cause state information to be stored in the memory cells. At least one switching element selectively connects the memory cells, the bit and word line circuits, and the control circuit to at least one power supply as a function of at least one control signal. The control circuit generates the control signal for disconnecting at least portions of the word line and bit line circuits from the power supply while state information is retained in the memory cells.
    • 存储器件包括存储器单元,每个存储器单元具有连接到其上的相应位和字线用于访问存储器单元,与至少一个字线耦合的字线电路和与至少一个位线耦合的位线电路 。 存储器件还包括与位和字线电路耦合的至少一个控制电路。 控制电路用于使状态信息存储在存储单元中。 至少一个开关元件将存储器单元,位和字线电路以及控制电路选择性地连接到作为至少一个控制信号的函数的至少一个电源。 控制电路产生控制信号,用于将字线和位线电路的至少一部分与电源断开,同时将状态信息保留在存储单元中。