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    • 5. 发明授权
    • Manual surveying instrument having collimation assisting device
    • 具有准直辅助装置的手动测量仪器
    • US08225518B2
    • 2012-07-24
    • US13057785
    • 2009-05-29
    • Satoshi YanobeYutaka Nakamura
    • Satoshi YanobeYutaka Nakamura
    • G01C5/00
    • G01C15/00
    • [Problem] To provide a manual surveying instrument that allows easily performing a collimating operation and allows performing a high precision measurement in a short time.[Solution Means] The manual surveying instrument includes a collimation assist device (70) having a collimation light transmitting system that emits a collimation light (R) along a collimation axis (O) toward a target installed at a measurement point, an area sensor (80) that obtains an image of a scene captured within a field of view of a collimating telescope (3), a display unit (48) that displays the image, a collimation light detecting unit (82) that detects the target as a result of receiving the collimation light reflected on the target by the area sensor, and an arithmetic control unit (46) that displays an area (94) being within a predetermined deviation from the collimation axis and where distance measurement is possible and a symbol indicating the target on the display unit as an animation image, judges that collimation has been completed when the target has been captured, by a manual operation of the collimating telescope, within the area where distance measurement is possible to perform a distance and angle measurement, and corrects an angle measurement value according to a deviation from the collimation axis of the target.
    • [问题]提供一种能够容易地进行准直操作并允许在短时间内执行高精度测量的手动测量仪器。 [解决方案]手动测量仪器包括准直辅助装置(70),准直辅助装置(70)具有准直光传输系统,其沿着准直轴(O)向安装在测量点处的目标发射准直光(R),区域传感器 80),其获得在准直望远镜(3)的视野内拍摄的场景的图像,显​​示图像的显示单元(48);作为结果的结果检测目标的准直光检测单元(82) 接收由所述区域传感器反射在所述目标上的准直光;以及运算控制单元,其显示与所述准直轴在预定偏差内的区域(94),并且能够进行距离测量,以及指示所述目标的符号 显示单元作为动画图像,通过准直望远镜的手动操作,在可能进行距离测量的区域内,判断已经捕获目标时的准直已经完成 执行距离和角度测量,并根据与目标的准直轴的偏差来校正角度测量值。
    • 8. 发明授权
    • Dynamic semiconductor storage device and method for operating same
    • 动态半导体存储装置及其操作方法
    • US07616510B2
    • 2009-11-10
    • US11848401
    • 2007-08-31
    • Yutaka Nakamura
    • Yutaka Nakamura
    • G11C7/00
    • G11C11/4094G11C11/4099
    • The object of the present invention is to provide a DRAM, in which the operation speed for a sense amplifier can be increased. Bit line precharging circuits PCt and PCb are arranged to precharge bit lines BLt and /BLt to a ground voltage GND, and reference word lines RWLo and RWLe and reference memory cells RMC are arranged, so that when a word line WL is activated, a potential difference is always generated between the bit lines BLt and /BLt. The sources of transistors N10 and N11 of an N-type sense amplifier NSAt are connected directly to a ground terminal GND, and the sources of transistors P2 and P3 of a P-type sense amplifier PSA are connected directly to a power source VDD. The gates of the transistors N10 and N11 are connected to the bit lines /BLt and BLt, and the drains are connected to the bit lines BLt and /BLt, respectively. Shift word lines SWL and shift memory cells SMC are arranged, so that the N sense amplifier NSAt can amplify the potential difference between the bit lines BLt and /BLt.
    • 本发明的目的是提供一种DRAM,其中可以增加读出放大器的操作速度。 位线预充电电路PCt和PCb布置成将位线BLt和/ BLt预充电到地电压GND,并且布置参考字线RWLo和RWLe以及参考存储单元RMC,使得当字线WL被激活时, 总是在位线BLt和/ BLt之间产生差异。 N型读出放大器NSAt的晶体管N10和N11的源极直接连接到接地端子GND,P型读出放大器PSA的晶体管P2和P3的源极直接连接到电源VDD。 晶体管N10和N11的栅极连接到位线BLt和BLt,漏极分别连接到位线BLt和/ BLt。 移位字线SWL和移位存储器单元SMC被布置,使得N个读出放大器NSAt可以放大位线BLt和/ BLt之间的电位差。