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    • 9. 发明授权
    • Selective removal of a metal oxide dielectric
    • 选择性去除金属氧化物电介质
    • US06432779B1
    • 2002-08-13
    • US09772632
    • 2001-01-30
    • Christopher HobbsRama I. HegdePhilip J. Tobin
    • Christopher HobbsRama I. HegdePhilip J. Tobin
    • H01L21336
    • H01L21/28035H01L21/2807H01L21/28088H01L21/28185H01L21/28194H01L21/28202H01L21/3105H01L21/31111H01L21/31116H01L21/31122H01L21/32136H01L29/4966H01L29/517H01L29/518
    • A method for forming a semiconductor device is disclosed in which a metal oxide gate dielectric layer is formed over a substrate. A gate electrode is then formed over the metal oxide layer thereby exposing a portion of the metal oxide layer. The exposed portion of the metal oxide gate dielectric layer is then chemically reduced to a metal or a metal hydride. The metal or metal hydride is then removed with a conventional wet etch or wet/dry etch combination. The metal oxide layer may include a metal element such as zirconium, tantalum, hafnium, titanium, or lanthanum and may further include an additional element such as silicon or nitrogen. Reducing the metal oxide layer may includes annealing the metal oxide gate dielectric layer in an ambient with an oxygen partial pressure that is less than a critical limit for oxygen desorption at a given temperature. In another embodiment, reducing the metal oxide gate dielectric layer may include annealing the metal oxide layer while supplying a hydrogen-containing precursor such as silane, ammonia, germane, hydrogen, and hydrazine to the metal oxide gate dielectric layer. The gate electrode may comprise a gate electrode stack that includes a titanium nitride layer over the metal oxide gate dielectric layer and a silicon-containing capping layer over the titanium nitride layer.
    • 公开了一种用于形成半导体器件的方法,其中在衬底上形成金属氧化物栅极电介质层。 然后在金属氧化物层上形成栅电极,从而暴露金属氧化物层的一部分。 然后将金属氧化物栅介质层的暴露部分化学还原成金属或金属氢化物。 然后用常规的湿蚀刻或湿/干蚀刻组合去除金属或金属氢化物。 金属氧化物层可以包括诸如锆,钽,铪,钛或镧的金属元素,并且还可以包括另外的元素如硅或氮。 还原金属氧化物层可以包括在氧气分压下在金属氧化物栅极电介质层中退火,其氧分压小于在给定温度下氧解吸的临界极限。 在另一个实施方案中,还原金属氧化物栅极电介质层可以包括使金属氧化物层退火,同时向金属氧化物栅极电介质层供应诸如硅烷,氨,锗烷,氢和肼的含氢前体。 栅电极可以包括栅极电极堆叠,其在金属氧化物栅极介电层上方包括氮化钛层,并且在氮化钛层上方包含含硅覆盖层。
    • 10. 发明授权
    • Process for forming a structure
    • 形成结构的方法
    • US06383873B1
    • 2002-05-07
    • US09575204
    • 2000-05-18
    • Rama I. HegdePhilip J. TobinAmit Nangia
    • Rama I. HegdePhilip J. TobinAmit Nangia
    • H01L21336
    • H01L21/28185H01L21/28194H01L29/513H01L29/517H01L29/518
    • A finished structure (100) includes a semiconductive region (102), a first oxide layer (106), a second oxide layer (108), and a conductive layer (110). The first oxide layer (106) lies between the semiconductive region (102) and the second oxide layer (108); and the second oxide layer (108) lies between the first oxide layer (106) and the conductive layer (110). The first oxide layer (106) includes at least a portion that is amorphous or includes a first element, a second element, and a third element. In the latter, the first element is a metallic element, and each of the first, second, and third elements are different from each other. A process for forming a structure (100) includes forming a first layer (106) near a semiconductive region (102), forming a second layer (108) after forming the first layer (106), and forming a third layer (110) after forming the second layer (108). The first oxide layer (106) includes a metallic element and oxygen. The third layer (110) is a non-insulating layer.
    • 完成的结构(100)包括半导体区域(102),第一氧化物层(106),第二氧化物层(108)和导电层(110)。 第一氧化物层(106)位于半导电区域(102)和第二氧化物层(108)之间; 并且所述第二氧化物层(108)位于所述第一氧化物层(106)和所述导电层(110)之间。 第一氧化物层(106)包括至少一部分,其是无定形的或包括第一元件,第二元件和第三元件。 在后者中,第一元件是金属元件,并且第一元件,第二元件和第三元件中的每一个元件彼此不同。 用于形成结构(100)的方法包括在半导体区域(102)附近形成第一层(106),在形成第一层(106)之后形成第二层(108),以及在形成第三层之后形成第三层(110) 形成第二层(108)。 第一氧化物层(106)包括金属元素和氧。 第三层(110)是非绝缘层。