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1. 发明申请

US20120265705A1 BENEFITS SELF SERVICE PRODUCT 审中-公开
标题翻译：优点自助服务产品
公开(公告)号：US20120265705A1
公开(公告)日：2012-10-18
申请号：US13085687
申请日：2011-04-13
申请人： Lynda Tollefson , Ashton Kawanishi , David O'Meara
发明人： Lynda Tollefson , Ashton Kawanishi , David O'Meara
IPC分类号： G06Q10/00
CPC分类号： G06Q30/02
摘要： A system and method for selectively conveying information via a benefits self service product. An example method includes determining, with reference to a repository of employee data, characteristics associated with an employee or prospective employee; ascertaining employee benefits options offered by an enterprise; employing the characteristics and the benefits options to select one or more example matches between one or more benefits options and an employee or prospective employee; and displaying an indication of the one or more example matches to an employee of the enterprise. In a more specific embodiment, a user interface enables an administrator to specify information comprising different cards in a set of predetermined cards. The indication of one or more example matches is provided via an electronic card that is selected from among the set of cards. The selected card is adapted to convey information pertaining to an example set of previously made choices by others with characteristics that match the characteristics of the employee or prospective employee.
摘要翻译：一种用于通过益处自助服务产品选择性地传送信息的系统和方法。示例性方法包括：参考员工数据库，确定与雇员或潜在雇员相关联的特征; 确定企业提供的员工福利待遇; 使用特征和益处选项来选择一个或多个福利选项与雇员或潜在雇员之间的一个或多个示例匹配; 以及向所述企业的雇员显示所述一个或多个示例匹配的指示。在更具体的实施例中，用户界面使得管理员能够指定包括一组预定卡中的不同卡的信息。一个或多个示例匹配的指示通过从该组卡中选择的电子卡提供。所选择的卡适于传达与具有与雇员或潜在雇员的特征相匹配的特征的其他具有先前选择的示例的信息。

2. 发明申请

US20070077701A1 Method of forming a gate stack containing a gate dielectric layer having reduced metal content 失效
标题翻译：形成包含具有降低的金属含量的栅极电介质层的栅极堆叠的方法
公开(公告)号：US20070077701A1
公开(公告)日：2007-04-05
申请号：US11239321
申请日：2005-09-30
申请人： David O'Meara , YoungJong Lee , Cory Wajda
发明人： David O'Meara , YoungJong Lee , Cory Wajda
IPC分类号： H01L21/8242 , H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L21/28194 , H01L21/3105 , H01L21/31116 , H01L21/31122 , H01L29/517 , H01L29/78
摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.
摘要翻译：提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。

3. 发明申请

US20060162861A1 Method and control system for treating a hafnium-based dielectric processing system 失效
公开(公告)号：US20060162861A1
公开(公告)日：2006-07-27
申请号：US11038129
申请日：2005-01-21
申请人： David O'Meara , Shingo Maku
发明人： David O'Meara , Shingo Maku
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： C03C17/001 , C03C17/22 , C03C17/23 , C03C2217/228 , C03C2217/258 , C03C2218/31 , C03C2218/33 , C23C16/4405 , Y10S438/905
摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

4. 发明申请

US20050217799A1 Wafer heater assembly 审中-公开
标题翻译：晶圆加热器总成
公开(公告)号：US20050217799A1
公开(公告)日：2005-10-06
申请号：US10813119
申请日：2004-03-31
申请人： David O'Meara , Gerrit Leusink , Stephen Cabral , Anthony Dip , Cory Wajda , Raymond Joe
发明人： David O'Meara , Gerrit Leusink , Stephen Cabral , Anthony Dip , Cory Wajda , Raymond Joe
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
摘要翻译：描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。加热单元包括封装在石英鞘中的碳线元件。加热单元与石英无污染，允许直接接触晶片。碳线或“编织”结构的机械灵活性允许线圈构造，其允许跨晶片的独立加热器区域控制。跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

5. 发明申请

US20050214445A1 Method and processing system for determining coating status of a ceramic substrate heater 审中-公开
标题翻译：确定陶瓷基板加热器涂层状态的方法和处理系统
公开(公告)号：US20050214445A1
公开(公告)日：2005-09-29
申请号：US10811574
申请日：2004-03-29
申请人： Cory Wajda , David O'Meara
发明人： Cory Wajda , David O'Meara
IPC分类号： B05C11/00 , B05D1/00 , C23C16/00 , C23C16/52 , H01C17/065 , H01C17/075 , H01L21/00
CPC分类号： H01L21/67253 , C23C16/52 , H01C17/065 , H01C17/075
摘要： A method and system for monitoring coating status of a ceramic substrate heater in a process chamber. The method includes heating a ceramic substrate heater to a desired temperature, exposing the ceramic substrate heater to a reactant gas during a process, and monitoring optical emission from the heated ceramic substrate heater to determine coating status of the ceramic substrate heater. Processes that can be monitored include a chamber cleaning process and a chamber conditioning process.
摘要翻译：一种用于监测处理室中的陶瓷衬底加热器的涂覆状态的方法和系统。该方法包括将陶瓷衬底加热器加热至所需温度，在工艺过程中将陶瓷衬底加热器暴露于反应气体，以及监测来自加热的陶瓷衬底加热器的光发射以确定陶瓷衬底加热器的涂层状态。可以监测的过程包括室清洁过程和室调节过程。

6. 发明申请

US20050026459A1 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US20050026459A1
公开(公告)日：2005-02-03
申请号：US10630970
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： C23C16/30 , H01L21/00 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

7. 发明授权

US08602418B1 Projectile trap assembly 有权
标题翻译：射弹陷阱装置
公开(公告)号：US08602418B1
公开(公告)日：2013-12-10
申请号：US12917464
申请日：2010-11-01
申请人： Steven Fred Hering , Carter Crittenden Bennett , Bradley Michael Malta , David O'Meara
发明人： Steven Fred Hering , Carter Crittenden Bennett , Bradley Michael Malta , David O'Meara
IPC分类号： F41J13/00
CPC分类号： F41J13/00
摘要： An improved projectile trap assembly includes a frame that supports a channel and a containment chamber. The containment chamber has an ingress point receiving a fired bullet and an egress point for distributing the bullet. The containment chamber is supported by a pair of bulkhead plates that are connected to the frame. Each bulkhead plate defines an aperture, with a scroll assembly being mounted between bulkhead plates proximate the aperture. The scroll assembly includes a front scroll affixed and a rear scroll detachably connected to the bulkhead plates. A side plate is detachably connected to the bulkhead plate opposite said front and rear scrolls to seal the scroll assembly to receive bullets. The containment chamber additionally includes upper and lower trap plates that are positioned proximate upper and lower channel plates at the ingress point. Finally, a plurality of collection buckets positioned below said front scroll in an adjustable position.
摘要翻译：改进的射弹捕获器组件包括支撑通道的框架和容纳室。安全壳有一个入口点，接收一个发射的子弹和一个出口点，用于分发子弹。容纳室由连接到框架的一对隔板支撑。每个隔板限定了一个孔，其中一个涡旋组件安装在靠近孔的隔板之间。涡旋组件包括固定的前涡卷和可拆卸地连接到隔板的后涡卷。侧板可拆卸地连接到与前后涡旋件相对的隔板，以密封涡旋组件以接收子弹。容纳室还包括上和下陷阱板，其位于接近点处的上和下通道板附近。最后，多个收集桶位于所述前涡卷的下方处于可调整位置。

8. 发明申请

US20070066084A1 Method and system for forming a layer with controllable spstial variation 审中-公开
标题翻译：用于形成具有可控的体积变化的层的方法和系统
公开(公告)号：US20070066084A1
公开(公告)日：2007-03-22
申请号：US11231335
申请日：2005-09-21
申请人： Cory Wajda , David O'Meara , Masanobu Igeta
发明人： Cory Wajda , David O'Meara , Masanobu Igeta
IPC分类号： H01L21/471 , B05C5/00
CPC分类号： H01L21/3185 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/3105 , H01L21/3144 , H01L21/3145 , H01L21/31662
摘要： A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.
摘要翻译：一种用于处理基材表面的方法和处理系统。该表面暴露于至少两个自由基来源的至少两个基团。由各自的基团产生的自由基与衬底表面的不同区域相互作用。本发明适合提高氧化，氮化或两者的均匀性。

9. 发明申请

US20050059259A1 Interfacial oxidation process for high-k gate dielectric process integration 有权
标题翻译：用于高k栅介质工艺集成的界面氧化工艺
公开(公告)号：US20050059259A1
公开(公告)日：2005-03-17
申请号：US10662875
申请日：2003-09-16
申请人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
发明人： David O'Meara , Cory Wajda , Tsuyoshi Takahashi , Alessandro Callegari , Kristen Scheer , Sufi Zafar , Paul Jamison
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/02181 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02304 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31658 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
摘要翻译：提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。扩散过滤层控制表面的氧化。可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

10. 发明申请

US20050026453A1 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US20050026453A1
公开(公告)日：2005-02-03
申请号：US10630969
申请日：2003-07-31
申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在衬底上变化小于约1A。

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