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1. 发明授权

US06569751B1 Low via resistance system 有权
标题翻译：低通电阻系统
公开(公告)号：US06569751B1
公开(公告)日：2003-05-27
申请号：US09617550
申请日：2000-07-17
申请人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
发明人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
IPC分类号： H01L2128
CPC分类号： H01L21/76846 , C23C14/025 , C23C14/0641 , C23C14/345 , H01L21/2855
摘要： A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of TixNy is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.
摘要翻译：在通孔内形成金属化互连系统的方法。钛的第一衬里层以下列方式沉积到第一厚度。将含有通孔的基板放置在含有钛靶的离子金属等离子体沉积室内。离子金属等离子体沉积室被抽空到第一基础压力。在第一沉积压力下将第一氩气流引入离子金属等离子体沉积室。衬底被偏压到第一电压。离子金属等离子体沉积室内的等离子体在第一时间内以第一功率通电。 TixNy的第二衬里层以下列方式沉积在钛的第一内衬层的顶部上的第二厚度上。在第二沉积压力下，将第一氮气流和第二氩气流引入离子金属等离子体沉积室。衬底被偏压到第二电压。离子金属等离子体沉积室内的等离子体以第二功率被施加第二时间长度，之后从离子金属等离子体沉积室中除去衬底。最后，在第二沉积室中沉积氮化钛的第三衬里层，并沉积钨塞。

2. 发明授权

US06893962B2 Low via resistance system 有权
标题翻译：低通电阻系统
公开(公告)号：US06893962B2
公开(公告)日：2005-05-17
申请号：US10400252
申请日：2003-03-27
申请人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
发明人： Prabhakar P. Tripathi , Zhihai Wang , Weidan Li
IPC分类号： C23C14/02 , C23C14/06 , C23C14/34 , H01L21/285 , H01L21/768 , H01L21/4763 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L21/76846 , C23C14/025 , C23C14/0641 , C23C14/345 , H01L21/2855
摘要： A method of forming a metallization interconnection system within a via. A first liner layer of titanium is deposited to a first thickness in the following manner. A substrate containing the via is placed within an ion metal plasma deposition chamber that contains a titanium target. The ion metal plasma deposition chamber is evacuated to a first base pressure. A first flow of argon is introduced to the ion metal plasma deposition chamber at a first deposition pressure. The substrate is biased to a first voltage. A plasma within the ion metal plasma deposition chamber is energized at a first power for a first length of time. A second liner layer of TixNy is deposited to a second thickness on top of the first liner layer of titanium in the following manner. A first flow of nitrogen and a second flow of argon are introduced to the ion metal plasma deposition chamber at a second deposition pressure. The substrate is biased to a second voltage. The plasma within the ion metal plasma deposition chamber is energized at a second power for a second length of time, after which the substrate is removed from the ion metal plasma deposition chamber. Finally, a third liner layer of titanium nitride is deposited in a second deposition chamber, and a plug of tungsten is deposited.
摘要翻译：在通孔内形成金属化互连系统的方法。钛的第一衬里层以下列方式沉积到第一厚度。将含有通孔的基板放置在含有钛靶的离子金属等离子体沉积室内。将离子金属等离子体沉积室抽真空至第一基础压力。在第一沉积压力下将第一氩气流引入离子金属等离子体沉积室。衬底被偏压到第一电压。离子金属等离子体沉积室内的等离子体在第一时间内以第一功率通电。以下列方式将第二衬垫层的Ti x N y Y n沉积到钛的第一内衬层的顶部上的第二厚度。在第二沉积压力下，将第一氮气流和第二氩气流引入离子金属等离子体沉积室。衬底被偏压到第二电压。离子金属等离子体沉积室内的等离子体以第二功率被施加第二时间长度，之后从离子金属等离子体沉积室中除去衬底。最后，在第二沉积室中沉积氮化钛的第三衬里层，并沉积钨塞。

3. 发明授权

US09078119B2 Method and system for acquiring information of machine type communication user equipment 有权
标题翻译：获取机型通信用户设备信息的方法和系统
公开(公告)号：US09078119B2
公开(公告)日：2015-07-07
申请号：US13508328
申请日：2010-11-04
申请人： Zhijun Li , Zhihai Wang , Xiaofeng Shi , Baoguo Xie
发明人： Zhijun Li , Zhihai Wang , Xiaofeng Shi , Baoguo Xie
IPC分类号： H04B7/00 , H04W8/22 , H04W4/00 , H04W60/00 , H04W88/16 , H04W92/24
CPC分类号： H04W8/22 , H04W4/70 , H04W60/00 , H04W88/16 , H04W92/24
摘要： A method and a system for acquiring information of Machine Type Communication (MTC) user equipment (UE) are provided. The method comprises the steps of: an MTC GateWay (MTC GW) acquiring the information of the MTC UE which currently requests to attach to a network or has attached to a network from a mobility management network element; the MTC GW sending the information of the MTC UE acquired from the mobility management network element to an MTC Server. The method and the system can control the MTC UE in real time and intelligently.
摘要翻译：提供了一种用于获取机器类型通信（MTC）用户设备（UE）的信息的方法和系统。该方法包括以下步骤：MTC网关（MTC GW）从移动管理网元获取当前请求附着到网络或已经附着到网络的MTC UE的信息; MTC GW将从移动性管理网元获取的MTC UE的信息发送到MTC服务器。该方法和系统可以实时和智能地控制MTC UE。

4. 发明授权

US08803068B2 Light sensor having a contiguous IR suppression filter and a transparent substrate 有权
标题翻译：光传感器具有连续的IR抑制滤光器和透明基板
公开(公告)号：US08803068B2
公开(公告)日：2014-08-12
申请号：US13337855
申请日：2011-12-27
申请人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
发明人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
IPC分类号： G01J3/50
CPC分类号： H01L31/02327 , G01S17/58 , H01L27/1446 , H01L31/102 , H01L31/112 , H01L31/167 , H01L31/18
摘要： Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.
摘要翻译：描述了将技术描述为在光传感器的透明基板上形成的IR抑制滤波器或任何其它基于干涉的滤波器。在一个或多个实施方式中，光传感器包括具有表面的基板。在衬底中形成一个或多个光电检测器。光电检测器被配置为检测光并响应于此提供信号。构造成阻挡红外光到达表面的IR抑制滤光器形成在透明基板上。光传感器还可以包括布置在表面上的多个彩色滤光片。彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。

5. 发明申请

US20120187281A1 LIGHT SENSOR HAVING TRANSPARENT SUBSTRATE AND THROUGH-SUBSTRATE VIAS 有权
标题翻译：具有透明基板和穿透基板VIAS的光传感器
公开(公告)号：US20120187281A1
公开(公告)日：2012-07-26
申请号：US13337864
申请日：2011-12-27
申请人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
发明人： Nicole D. Kerness , Arkadii V. Samoilov , Zhihai Wang , Joy T. Jones
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14621 , H01L27/14618 , H01L27/14625 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327 , H01L31/18 , H01L2224/13
摘要： Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.
摘要翻译：描述了技术来提供在玻璃基板上形成到光传感器的IR抑制滤光器。在一个或多个实施方式中，光传感器包括具有表面的基板。在衬底中形成一个或多个光电检测器，并配置成检测光并响应于此提供信号。构造成阻挡红外光到达表面的IR抑制滤光器形成在玻璃基板上。光传感器还包括布置在表面上的多个彩色滤光片。彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。光传感器还包括穿硅通孔，以提供不同导电层之间的电互连。

6. 发明申请

US20100302937A1 Control Method, System, and Device for Circuit Domain Fallback 审中-公开
标题翻译：电路域回退的控制方法，系统和设备
公开(公告)号：US20100302937A1
公开(公告)日：2010-12-02
申请号：US12864504
申请日：2009-01-07
申请人： Ying Hu , Zhiming Yu , Zaifeng Zong , Minya Ye , Zhihai Wang
发明人： Ying Hu , Zhiming Yu , Zaifeng Zong , Minya Ye , Zhihai Wang
IPC分类号： H04J3/14
CPC分类号： H04W76/18 , H04W8/12 , H04W36/0022
摘要： The present invention discloses a method, system, and apparatus for controlling Circuit Switched, CS, fallback. The method comprises: a network element which got calling information of the present call in CS domain notifying a Mobility Management Entity, MME, of the calling information; the MME notifying the called User Equipment, UE, of the calling information; the called UE determining whether the call performs CS fallback according to whether the user answers the call or according to pre-configured CS fallback policy. By applying the present invention, the CS fallback of ongoing call can be controlled by the called user which is in EPS network, therefore the usability of the user's EPS network service is ensured, the satisfaction degree of the user is improved, and the useless occupancy of the GSM/UMTS network resources is reduced.
摘要翻译：本发明公开了一种用于控制电路交换（CS）回退的方法，系统和装置。该方法包括：在呼叫信息通知移动性管理实体MME的CS域中接收到本呼叫的呼叫信息的网元; MME通知被叫用户设备UE的呼叫信息; 被叫UE根据用户是否应答呼叫还是根据预配置的CS后备策略来确定呼叫是否执行CS回退。通过应用本发明，正在进行的呼叫的CS回退可以由在EPS网络中的被叫用户进行控制，因此确保了用户的EPS网络服务的可用性，提高了用户的满意度，并且无用的占用的GSM / UMTS网络资源减少。

7. 发明授权

US07229923B2 Multi-step process for forming a barrier film for use in copper layer formation 有权
标题翻译：用于形成用于铜层形成的阻挡膜的多步法
公开(公告)号：US07229923B2
公开(公告)日：2007-06-12
申请号：US10772133
申请日：2004-02-03
申请人： Wilbur G. Catabay , Zhihai Wang , Ping Li
发明人： Wilbur G. Catabay , Zhihai Wang , Ping Li
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76859 , H01L21/76864 , H01L21/76871 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming robust copper structures include steps for providing a substrate with an insulating layer with openings formed therein. At least two barrier layers are then formed followed by the deposition of a copper seed layer which is annealed. Bulk copper deposition of copper and planarization can follow. In one approach the seed layer is implanted with suitable materials forming an implanted seed layer upon which a bulk layer of conductive material is formed and annealed to form a final barrier layer. In another approach, a barrier layer is formed between two seed layers which forms a base for bulk copper deposition. Another method involves forming a first barrier layer and forming a copper seed layer thereon. The seed layer being implanted with a barrier material (e.g. palladium, chromium, tantalum, magnesium, and molybdenum or other suitable materials) and then bulk deposition of copper-containing material is performed followed by annealing.
摘要翻译：用于形成坚固的铜结构的方法包括为衬底提供其中形成有开口的绝缘层的步骤。然后形成至少两个阻挡层，随后沉积退火的铜籽晶层。大量铜沉积铜和平坦化可以遵循。在一种方法中，用形成植入种子层的合适材料注入种子层，在其上形成导电材料的主体层并退火以形成最终的阻挡层。在另一种方法中，在形成用于大量铜沉积的基底的两个种子层之间形成阻挡层。另一种方法包括形成第一阻挡层并在其上形成铜籽晶层。植入具有阻挡材料（例如钯，铬，钽，镁和钼或其它合适材料）的籽晶层，然后进行含铜材料的堆积沉积，然后进行退火。

8. 发明授权

US06489231B1 Method for forming barrier and seed layer 有权
标题翻译：形成屏障和种子层的方法
公开(公告)号：US06489231B1
公开(公告)日：2002-12-03
申请号：US09907424
申请日：2001-07-17
申请人： Kiran Kumar , Zhihai Wang , Wilbur G. Gatabay
发明人： Kiran Kumar , Zhihai Wang , Wilbur G. Gatabay
IPC分类号： H01L214763
CPC分类号： H01L21/76873 , H01L21/2652 , H01L21/28247 , H01L21/2855 , H01L21/3144 , H01L21/31662 , H01L21/3211 , H01L21/76843 , H01L21/76877 , H01L29/6659
摘要： A method for creating a highly reflective surface on an electroplated conduction layer. A barrier layer is deposited on a substrate using a self ionized plasma deposition process. The barrier layer has a thickness of no more than about one hundred angstroms. An adhesion layer is deposited on the barrier layer, using a self ionized plasma deposition process. A seed layer is deposited on the adhesion layer, also using a self ionized plasma deposition process, at a bias of no less than about one hundred and fifty watts. The combination of the barrier layer, adhesion layer, and seed layer is at times referred to herein as the barrier seed layer. The conduction layer is electroplated on the seed layer, thereby forming the highly reflective surface on the conduction layer, where the highly reflective surface has a reflectance of greater than about seventy percent.
摘要翻译：一种在电镀导电层上形成高反射面的方法。使用自电离等离子体沉积工艺在衬底上沉积阻挡层。阻挡层的厚度不大于约一百埃。使用自电离等离子体沉积工艺在阻挡层上沉积粘附层。种子层沉积在粘附层上，也使用自电离等离子体沉积工艺，偏压不小于约一百五十瓦。阻挡层，粘合层和种子层的组合在本文中有时被称为阻挡种子层。将导电层电镀在种子层上，由此在导电层上形成高反射表面，其中高反射表面的反射率大于约百分之七十。

9. 发明授权

US6028015A Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption 有权
标题翻译：处理低介电常数有机氧化硅绝缘材料损伤表面以抑制吸湿的方法
公开(公告)号：US6028015A
公开(公告)日：2000-02-22
申请号：US281514
申请日：1999-03-29
申请人： Zhihai Wang , Wilbur G. Catabay , Joe W. Zhao
发明人： Zhihai Wang , Wilbur G. Catabay , Joe W. Zhao
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/469
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/3122 , H01L21/76814 , H01L21/76831
摘要： A process is described for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces of said organo silicon oxide insulation layer with a hydrogen plasma. The treatment with hydrogen plasma causes hydrogen to bond to silicon atoms with dangling bonds in the damaged surface of the organo silicon oxide layer to replace organic material severed from such silicon atoms at the damaged surface, whereby absorption of moisture in the damaged surface of the organo silicon oxide layer, by bonding of such silicon dangling bonds with moisture, is inhibited.
摘要翻译：描述了一种处理集成电路结构的低介电常数有机氧化硅绝缘层的损伤表面以抑制水分吸收的方法，其包括用氢等离子体处理所述有机氧化硅绝缘层的这种损坏表面。用氢等离子体处理可以使有机硅氧化物层受损表面的氢键键合到具有悬挂键的硅原子上，以取代被损坏的表面从这种硅原子上切下的有机材料，从而吸收有机物损坏表面的水分通过这种硅悬挂键与水分的结合，氧化硅层被抑制。

10. 发明授权

US5994211A Method and composition for reducing gate oxide damage during RF sputter clean 失效
标题翻译：用于在RF溅射清洗期间减少栅极氧化物损伤的方法和组合物
公开(公告)号：US5994211A
公开(公告)日：1999-11-30
申请号：US976033
申请日：1997-11-21
申请人： Zhihai Wang , Wei-Jen Hsia , Wilbur Catabay
发明人： Zhihai Wang , Wei-Jen Hsia , Wilbur Catabay
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/768 , H01L21/70
CPC分类号： H01L21/02071 , H01L21/76814 , H01L21/76843 , H01L21/76844
摘要： Provided is a method and composition for RF sputter cleaning of contact and via holes which provides substantially uniform charge distribution in the holes and minimizes electron shadowing. This is accomplished by isotropically depositing, such as by PVD, a layer of conductive material at the wafer surface surrounding a hole and down the sides of the hole. Isotropic deposition is such that in high aspect ratio trenches and holes deposition is heaviest at the top and minimal at the bottom (due to the deposition shadowing effect). The deposited conductive material is preferably a metal that is also used as a liner in the holes prior to depositing the plug material. The conductive material provides path for negative charge otherwise accumulating at the top of a hole during RF sputter cleaning to reach the bottom of the hole and thereby prevents accumulations of charge of one polarity in and around the hole. Thus, the stress on the gate oxide caused by conventional RF sputtering, described above, is relieved.
摘要翻译：提供了用于RF溅射清洗接触孔和通孔的方法和组合物，其在孔中提供基本上均匀的电荷分布并使电子阴影最小化。这通过诸如PVD的各向同性地沉积在围绕孔的晶片表面和孔的侧面的导电材料层来实现。各向同性沉积使得在高纵横比下，沟槽和孔沉积在顶部最重，底部最小（由于沉积阴影效应）。沉积的导电材料优选是在沉积插塞材料之前也用作孔中的衬垫的金属。导电材料提供用于负电荷的路径，否则在RF溅射清洗期间积聚在孔的顶部以到达孔的底部，从而防止在孔内和周围累积一种极性的电荷。因此，如上所述，通过常规RF溅射引起的栅极氧化物上的应力得以缓解。

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