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1. 发明授权

US5838620A Circuit for cancelling and replacing redundant elements 失效
公开(公告)号：US5838620A
公开(公告)日：1998-11-17
申请号：US796148
申请日：1997-02-06
申请人： Paul S. Zagar , Adrian E. Ong
发明人： Paul S. Zagar , Adrian E. Ong
IPC分类号： G11C29/00 , G11C13/00
CPC分类号： G11C29/785 , G11C29/838
摘要： In an integrated circuit having addressable primary elements and redundant elements which can be programmed to replace primary elements, a circuit and method are provided for cancelling and replacing redundant elements. A circuit is described which can be used in a memory such as a dynamic random access memory (DRAM) which uses a selectively blowable anti-fuse to disable a redundant element which was previously programmed to replace a defective primary element. The disclosure describes a method for permanently cancelling the defective redundant element and replacing the defective redundant element with another redundant element.

2. 发明授权

US5901105A Dynamic random access memory having decoding circuitry for partial memory blocks 失效
标题翻译：具有用于部分存储器块的解码电路的动态随机存取存储器
公开(公告)号：US5901105A
公开(公告)日：1999-05-04
申请号：US869035
申请日：1997-06-05
申请人： Adrian E Ong , Paul S. Zagar , Troy Manning , Brent Keeth , Ken Waller
发明人： Adrian E Ong , Paul S. Zagar , Troy Manning , Brent Keeth , Ken Waller
IPC分类号： G11C5/02 , G11C7/10 , G11C11/4096 , G11C29/00 , G11C29/36 , G11C8/00
CPC分类号： G11C29/785 , G11C11/4096 , G11C29/80 , G11C29/88 , G11C5/025 , G11C7/10 , G11C29/36
摘要： A semiconductor dynamic random-access memory (DRAM) device embodying numerous features that collectively and/or individually prove beneficial and advantageous with regard to such considerations as density, power consumption, speed, and redundancy is disclosed. The device is a 64 Mbit DRAM comprising eight substantially identical 8 Mbit partial array blocks (PABs), each pair of PABs comprising a 16 Mbit quadrant of the device. Between the top two quadrants and between the bottom two quadrants are column blocks containing I/O read/write circuitry, column redundancy fuses, and column decode circuitry. Column select lines originate from the column blocks and extend right and left across the width of each quadrant. Each PAB comprises eight substantially identical 1 Mbit sub-array blocks (SABs). Associated with each SAB are a plurality of local row decoder circuits functioning to receive partially decoded row addresses from a column predecoder circuit and generating local row addresses supplied to the SAB with which they are associated. Various pre- and/or post-packaging options are provided for enabling a large degree of versatility, redundancy, and economy of design. Programmable options of the disclosed device are programmable by means of both laser fuses and electrical fuses. In the RAS chain, circuitry is provided for simulating the RC time constant behavior of word lines and digit lines during memory accesses, such that memory access cycle time can be optimized. Test data compression circuitry optimizes the process of testing each cell in the array. On-chip topology circuitry simplifies the testing of the device.
摘要翻译：公开了一种体现许多特征的半导体动态随机存取存储器（DRAM）装置，它们集中和/或单独地证明了在诸如密度，功耗，速度和冗余度之类的考虑方面是有利和有利的。该器件是包括八个基本上相同的8兆位部分阵列块（PAB）的64Mbit DRAM，每对PAB包括该器件的16Mb象限。顶部两个象限之间和底部两个象限之间是包含I / O读/写电路，列冗余保险丝和列解码电路的列块。列选择线来自列块，并在每个象限的宽度上左右延伸。每个PAB包括八个基本上相同的1兆位子阵列块（SAB）。与每个SAB相关联的是多个本地行解码器电路，用于从列预解码器电路接收部分解码的行地址，并产生提供给与它们相关联的SAB的本地行地址。提供了各种前置和/或后封装选项，以实现大量多功能性，冗余性和设计经济性。所公开的设备的可编程选项可通过激光熔丝和电熔丝两者来编程。在RAS链中，提供电路用于在存储器访问期间模拟字线和数字线的RC时间常数行为，使得可以优化存储器访问周期时间。测试数据压缩电路优化了测试阵列中每个单元的过程。片上拓扑电路简化了器件的测试。

3. 发明授权

US5761145A Efficient method for obtaining usable parts from a partially good memory integrated circuit 失效
公开(公告)号：US5761145A
公开(公告)日：1998-06-02
申请号：US685783
申请日：1996-07-24
申请人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
发明人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
IPC分类号： G06F12/16 , G01R31/30 , G06F11/22 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , G11C29/50 , G11C13/00
CPC分类号： G11C29/70 , G01R31/3004 , G06F11/22 , G11C29/02 , G11C29/44 , G11C29/50 , G11C29/83 , G11C29/832 , G11C29/88 , G11C11/401 , G11C2029/5006
摘要： An integrated circuit memory device has multiple subarray partitions which can be independently isolated from the remaining circuitry on the integrated circuit. Subarrays of the integrated circuit can be independently tested. Should a subarray of the integrated circuit be found inoperable it is electrically isolated from the remaining circuitry on the integrated circuit so that it cannot interfere with the normal operation of the remaining circuitry. Defects such as power to ground shorts in a subarray which would have previously been catastrophic can be electrically isolated allowing the remaining functional subarrays to be utilized. Integrated circuit repair by isolation of inoperative elements eliminates the current draw and other performance degradations that have previously been associated with integrated circuits with defects repaired through the incorporation of redundant elements alone.

4. 发明授权

US6097647A Efficient method for obtaining usable parts from a partially good memory integrated circuit 有权
标题翻译：从部分良好的存储器集成电路获得可用部件的高效方法
公开(公告)号：US6097647A
公开(公告)日：2000-08-01
申请号：US382526
申请日：1999-08-25
申请人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
发明人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
IPC分类号： G06F12/16 , G01R31/30 , G06F11/22 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , G11C29/50 , G11C7/00
CPC分类号： G11C29/70 , G01R31/3004 , G06F11/22 , G11C29/02 , G11C29/44 , G11C29/50 , G11C29/83 , G11C29/832 , G11C29/88 , G11C11/401 , G11C2029/5006
摘要： An integrated circuit memory device has multiple subarray partitions which can be independently isolated from the remaining circuitry on the integrated circuit. Subarrays of the integrated circuit can be independently tested. Should a subarray of the integrated circuit be found inoperable it is electrically isolated from the remaining circuitry on the integrated circuit so that it cannot interfere with the normal operation of the remaining circuitry. Defects such as power to ground shorts in a subarray which would have previously been catastrophic can be electrically isolated allowing the remaining functional subarrays to be utilized. Integrated circuit repair by isolation of inoperative elements eliminates the current draw and other performance degradations that have previously been associated with integrated circuits with defects repaired through the incorporation of redundant elements alone.
摘要翻译：集成电路存储器件具有多个子阵列分隔，其可以独立地与集成电路上的剩余电路隔离。集成电路的子阵列可以独立测试。如果发现集成电路的子阵列不可操作，则它与集成电路上的剩余电路电隔离，使得其不能干扰剩余电路的正常操作。以前曾经是灾难性的子阵列中的诸如地面短路的电力的缺陷可以电隔离，允许利用剩余的功能子阵列。通过隔离不起作用元件的集成电路修复消除了以前与集成电路相关的电流消耗和其他性能下降，缺陷通过单独使用冗余元件进行维修。

5. 发明授权

US5912579A Circuit for cancelling and replacing redundant elements 有权
标题翻译：用于取消和更换冗余元件的电路
公开(公告)号：US5912579A
公开(公告)日：1999-06-15
申请号：US133586
申请日：1998-08-13
申请人： Paul S. Zagar , Adrian E. Ong
发明人： Paul S. Zagar , Adrian E. Ong
IPC分类号： G11C29/00 , G11C17/16
CPC分类号： G11C29/785 , G11C29/838
摘要： In an integrated circuit having addressable primary elements and redundant elements which can be programmed to replace primary elements, a circuit and method are provided for cancelling and replacing redundant elements. A circuit is described which can be used in a memory such as a dynamic random access memory (DRAM) which uses a selectively blowable anti-fuse to disable a redundant element which was previously programmed to replace a defective primary element. The disclosure describes a method for permanently cancelling the defective redundant element and replacing the defective redundant element with another redundant element.
摘要翻译：在具有可寻址主要元件的集成电路和可编程为替代主要元件的冗余元件中，提供了用于取消和替换冗余元件的电路和方法。描述了可以用于存储器中的电路，例如动态随机存取存储器（DRAM），其使用可选择地可吹出的反熔丝来禁用先前被编程为替换有缺陷的主要元件的冗余元件。本公开描述了一种用于永久地消除有缺陷的冗余元件并用另一个冗余元件替换有缺陷的冗余元件的方法。

6. 发明授权

US5677884A Circuit for cancelling and replacing redundant elements 失效
标题翻译：用于取消和更换冗余元件的电路
公开(公告)号：US5677884A
公开(公告)日：1997-10-14
申请号：US816203
申请日：1997-02-28
申请人： Paul S. Zagar , Adrian E. Ong
发明人： Paul S. Zagar , Adrian E. Ong
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/785 , G11C29/838
摘要： In an integrated circuit having addressable primary elements and redundant elements which can be programmed to replace primary elements, a circuit and method are provided for cancelling and replacing redundant elements. A circuit is described which can be used in a memory such as a dynamic random access memory (DRAM) which uses a selectively blowable anti-fuse to disable a redundant element which was previously programmed to replace a defective primary element. The disclosure describes a method for permanently cancelling the defective redundant element and replacing the defective redundant element with another redundant element.
摘要翻译：在具有可寻址主要元件的集成电路和可编程为替代主要元件的冗余元件中，提供了用于取消和替换冗余元件的电路和方法。描述了可以用于存储器中的电路，例如动态随机存取存储器（DRAM），其使用可选择地可吹出的反熔丝来禁用先前被编程为替换有缺陷的主要元件的冗余元件。本公开描述了一种用于永久地消除有缺陷的冗余元件并用另一个冗余元件替换有缺陷的冗余元件的方法。

7. 发明授权

US5850368A Burst EDO memory address counter 失效
标题翻译：突发EDO内存地址计数器
公开(公告)号：US5850368A
公开(公告)日：1998-12-15
申请号：US922194
申请日：1997-09-02
申请人： Adrian E. Ong , Paul S. Zagar , Brett L. Williams , Troy A. Manning
发明人： Adrian E. Ong , Paul S. Zagar , Brett L. Williams , Troy A. Manning
IPC分类号： G11C8/04 , G11C8/00
CPC分类号： G11C8/04
摘要： A counter comprised of two flip flops and a multiplexer produces a sequential or interleaved address sequence. The addresses produced are used to access memory elements in a Burst Extended Data Output Dynamic Random Access Memory (Burst EDO or BEDO DRAM). Input addresses in combination with a sequence select signal are logically combined to produce a multiplexer select input which selects between true and compliment outputs of a first flip flop to couple to an input of a second flip flop to specify a toggle condition for the second flip flop. Outputs of the counter are compared with outputs of an input address latch to detect the end of a burst sequence and initialize the device for another burst access. A transition of the Read/Write control line during a burst access will terminate the burst access and initialize the device for another burst access.
摘要翻译：由两个触发器和多路复用器组成的计数器产生顺序或交错地址序列。所产生的地址用于访问突发扩展数据输出动态随机存取存储器（Burst EDO或BEDO DRAM）中的存储器元件。与序列选择信号组合的输入地址被逻辑地组合以产生多路复用器选择输入，其选择第一触发器的真实和补码输出以耦合到第二触发器的输入以指定第二触发器的切换条件。将计数器的输出与输入地址锁存器的输出进行比较，以检测突发序列的结束，并初始化用于另一个突发存取的设备。在脉冲串访问期间读/写控制线的转换将终止脉冲串访问并初始化设备以进行另一个突发存取。

8. 发明授权

US06208568B1 Circuit for cancelling and replacing redundant elements 有权
标题翻译：用于取消和更换冗余元件的电路
公开(公告)号：US06208568B1
公开(公告)日：2001-03-27
申请号：US09133714
申请日：1998-08-13
申请人： Paul S. Zagar , Adrian E. Ong
发明人： Paul S. Zagar , Adrian E. Ong
IPC分类号： G11C1300
CPC分类号： G11C29/785 , G11C29/838
摘要： In an integrated circuit having addressable primary elements and redundant elements which can be programmed to replace primary elements, a circuit and method are provided for cancelling and replacing redundant elements. A circuit is described which can be used in a memory such as a dynamic random access memory (DRAM) which uses a selectively blowable anti-fuse to disable a redundant element which was previously programmed to replace a defective primary element. The disclosure describes a method for permanently cancelling the defective redundant element and replacing the defective redundant element with another redundant element.
摘要翻译：在具有可寻址主要元件的集成电路和可编程为替代主要元件的冗余元件中，提供了用于取消和替换冗余元件的电路和方法。描述了可以用于存储器中的电路，例如动态随机存取存储器（DRAM），其使用可选择地可吹出的反熔丝来禁用先前被编程为替换有缺陷的主要元件的冗余元件。本公开描述了一种用于永久地消除有缺陷的冗余元件并用另一个冗余元件替换有缺陷的冗余元件的方法。

9. 再颁专利

USRE36821E Wordline driver circuit having a directly gated pull-down device 失效
标题翻译：字线驱动电路具有直接门控下拉装置
公开(公告)号：USRE36821E
公开(公告)日：2000-08-15
申请号：US644351
申请日：1996-05-10
申请人： Stephen L. Casper , Paul S. Zagar , Adrian E. Ong
发明人： Stephen L. Casper , Paul S. Zagar , Adrian E. Ong
IPC分类号： G11C8/00 , G11C8/08
CPC分类号： G11C8/08
摘要： The invention is a circuit and method for quickly driving non-selected wordlines to correct potentials. The invention drives the non-selected wordlines to low potentials through a driving device directly gated by a primary select predecode signal generated by decode circuitry. The driving device is electrically interposed between the wordline and a reference node. The invention provides low power operation, and provides reliable wordline selection for circuits having supply potentials less than 5 volts.
摘要翻译：本发明是用于快速驱动未选择的字线以纠正电位的电路和方法。本发明通过由解码电路产生的初级选择预解码信号直接选通的驱动装置将未选择的字线驱动到低电位。驱动装置电插入字线和参考节点之间。本发明提供低功率操作，并且为电源电压低于5伏的电路提供可靠的字线选择。

10. 发明授权

US5970008A Efficient method for obtaining usable parts from a partially good memory integrated circuit 失效
公开(公告)号：US5970008A
公开(公告)日：1999-10-19
申请号：US993824
申请日：1997-12-18
申请人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
发明人： Paul S. Zagar , Brent Keeth , Adrian E. Ong
IPC分类号： G06F12/16 , G01R31/30 , G06F11/22 , G11C29/00 , G11C29/02 , G11C29/04 , G11C29/44 , G11C29/50 , G11C7/00
CPC分类号： G11C29/70 , G01R31/3004 , G06F11/22 , G11C29/02 , G11C29/44 , G11C29/50 , G11C29/83 , G11C29/832 , G11C29/88 , G11C11/401 , G11C2029/5006
摘要： An integrated circuit memory device has multiple subarray partitions which can be independently isolated from the remaining circuitry on the integrated circuit. Subarrays of the integrated circuit can be independently tested. Should a subarray of the integrated circuit be found inoperable it is electrically isolated from the remaining circuitry on the integrated circuit so that it cannot interfere with the normal operation of the remaining circuitry. Defects such as power to ground shorts in a subarray which would have previously been catastrophic can be electrically isolated allowing the remaining functional subarrays to be utilized. Integrated circuit repair by isolation of inoperative elements eliminates the current draw and other performance degradations that have previously been associated with integrated circuits with defects repaired through the incorporation of redundant elements alone.

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